The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3298
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
D14059EJ1V0DS00 (1st edition)
Date Published
April 2000 NS CP(K)
Printed in Japan
DATA SHEET
The mark
5
5
5
5
shows major revised points.
DESCRIPTION
The 2SK3298 is N-channel MOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
Q
G
= 34 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 7.5 A)
Gate voltage rating
30 V
Low on-state resistance
R
DS(on)
= 0.75
MAX. (V
GS
= 10 V, I
D
= 4.0 A)
Avalanche capability ratings
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C
)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
30
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
7.5
A
Drain Current (Pulse)
Note1
I
D(pulse)
30
A
Total Power Dissipation (T
A
= 25C)
P
T1
2.0
W
Total Power Dissipation (T
C
= 25C)
P
T2
40
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-
55 to +150
C
Single Avalanche Current
Note2
I
AS
7.5
A
Single Avalanche Energy
Note2
E
AS
37.5
mJ
Notes 1. PW
10
s, Duty Cycle
1 %
2. Starting T
ch
= 25 C, V
DD
= 150 V, R
G
= 25
,
V
GS
= 20 V
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3298
Isolated TO-220
Data Sheet D14059EJ1V0DS00
2
2SK3298
ELECTRICAL CHARACTERISTICS(T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
100
A
Gate Leakage Current
I
GSS
V
GS
=
30 V, V
DS
= 0 V
100
nA
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 4.0 A
3.2
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 4.0 A
0.67
0.75
Input Capacitance
C
iss
V
DS
= 10 V
1580
pF
Output Capacitance
C
oss
V
GS
= 0 V
280
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
25
pF
Turn-on Delay Time
t
d(on)
I
D
= 4.0 A
27
ns
Rise Time
t
r
V
GS(on)
= 10 V
14
ns
Turn-off Delay Time
t
d(off)
V
DD
= 150 V
66
ns
Fall Time
t
f
R
G
= 10
24
ns
Total Gate Charge
Q
G
I
D
= 7.5 A
34
nC
Gate to Source Charge
Q
GS
V
DD
= 450 V
8.2
nC
Gate to Drain Charge
Q
GD
V
GS
= 10 V
12.3
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 7.5 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 7.5 A, V
GS
= 0 V
1.6
s
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
s
9.0
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS
(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
5
Data Sheet D14059EJ1V0DS00
3
2SK3298
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
40
20
30
5
15
20
10
0
0
25
30
6.0 V
V
GS
= 10 V
8.0 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
15
10
5
0
100
10
1.0
0.1
0
V
DS
= 10 V
Pulsed
T
ch
= 75C
125C
T
ch
= 25C
25C
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
50
0
50
100
150
5.0
4.0
3.0
2.0
1.0
0
V
DS
= 10 V
I
D
= 1 mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.0
10
100
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
10
100
0.1
1.0
0.1
V
DS
= 10 V
Pulsed
T
ch
= 25C
25C
75C
125C
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
15
2.0
3.0
V
GS
- Gate to Source Voltage - V
R
DS (on)
- Drain to Source On-State Resistance -
1.0
0
5
10
0
I
D
= 7.5 A
4.0 A
Pulsed
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance -
3.0
4.0
0
0
1.0
2.0
20 V
V
GS
= 10 V
5
Data Sheet D14059EJ1V0DS00
4
2SK3298
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
150
R
DS (on)
- Drain to Source On-State Resistance -
2.0
0
0
100
50
T
ch
- Channel Temperature - C
3.0
1.0
V
GS
= 10 V
Pulsed
I
D
= 7.5 A
4.0 A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
1.5
1
0.5
0
0
100
10
1.0
0.1
Pulsed
0 V
V
GS
= 10 V
1000
100
10
0.1
1
10000
1000
100
10
1
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1MHz
V
DS
- Drain to Source Voltage - V
C
rss
C
oss
C
iss
V
DD
= 150 V
V
GS(on)
= 10 V
R
G
= 10
SWITCHING CHARACTERISTICS
0.1
1
10
100
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
100
10
1
0.1
t
d(off)
t
d(on)
t
f
t
r
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1
10
100
t
rr
- Reverse Recovery Time -
s
0.1
I
D
- Drain Current - A
10
1
0.1
0.01
di/dt = 50 A/
s
V
GS
= 0 V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
20
10
30
40
800
600
400
200
0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
16
14
12
10
8
6
4
2
0
I
D
= 7.5 A
V
GS
V
DD
= 450 V
300 V
150 V
V
DS
Data Sheet D14059EJ1V0DS00
5
2SK3298
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
100
80
60
40
20
0
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
0
80
20
40
60
100
140
120
160
40
30
20
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
FORWARD BIAS SAFE OPERATING AREA
10
100
1000
I
D
- Drain Current - A
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
Po
wer Dissipation Limited
100
s
10
ms
30
ms
1 ms
3 ms
100
ms
PW
= 10
s
R
DS(on)
Limited
I
D(pulse)
I
D(DC)
T
C
= 25C
Single Pulse
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th
(t)
- Transient Thermal Resistance -
C/
W
100 m
1
10
100
1000
10 m
1 m
100
10
100
10
1
0.1
0.01
R
th(ch-A)
= 62.5 C/W
R
th(ch-C)
= 3.13 C/W
Single Pulse
PDF 
ZIP