1999,2000
MOS FIELD EFFECT TRANSISTOR
2SK3299
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
D14060EJ1V0DS00 (1st edition)
Date Published
April 2000 NS CP(K)
Printed in Japan
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark
shows major revised points.
DESCRIPTION
The 2SK3299 is N-Channel MOS FET device that features
a low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
Q
G
= 34 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 10 A)
Gate voltage rating
30 V
Low on-state resistance
R
DS(on)
= 0.75
MAX. (V
GS
= 10 V, I
D
= 5.0 A)
Avalanche capability ratings
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C
)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
30
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
10
A
Drain Current (Pulse)
Note1
I
D(pulse)
40
A
Total Power Dissipation (T
A
= 25C)
P
T1
1.5
W
Total Power Dissipation (T
C
= 25C)
P
T2
75
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-
55 to +150
C
Single Avalanche Current
Note2
I
AS
10
A
Single Avalanche Energy
Note2
E
AS
66.7
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 150 V, R
G
= 25
,
V
GS
= 20 V
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3299
TO-220AB
2SK3299-S
TO-262
2SK3299-ZJ
TO-263
Data Sheet D14060EJ1V0DS00
2
2SK3299
ELECTRICAL CHARACTERISTICS(T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
100
A
Gate Leakage Current
I
GSS
V
GS
=
30 V, V
DS
= 0 V
100
nA
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 5.0 A
3.2
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 5.0 A
0.68
0.75
Input Capacitance
C
iss
V
DS
= 10 V
1580
pF
Output Capacitance
C
oss
V
GS
= 0 V
280
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
25
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150 V, I
D
= 5.0 A
27
ns
Rise Time
t
r
V
GS(on)
= 10 V
17
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
66
ns
Fall Time
t
f
24
ns
Total Gate Charge
Q
G
V
DD
= 450 V
34
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
8.2
nC
Gate to Drain Charge
Q
GD
I
D
= 10 A
12.3
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 10 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 10 A, V
GS
= 0 V
1.9
s
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
s
12
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS
(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D14060EJ1V0DS00
3
2SK3299
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
0
40
20
30
5
0
15
20
10
25
30
6.0 V
V
GS
= 10 V
8.0 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
15
10
5
0
100
10
1
0.1
0.01
V
DS
= 10 V
Pulsed
25 C
-
25 C
T
ch
= 125 C
75 C
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cutoff Voltage - V
-
50
0
50
100
150
5.0
4.0
3.0
2.0
1.0
0
V
DS
= 10 V
I
D
= 1 mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
100
10
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
10
100
0.1
1
0.1
V
DS
= 10 V
Pulsed
T
ch
=
-
25 C
25 C
75 C
125 C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
2.0
V
GS
- Gate to Source Voltage - V
R
DS (on)
- Drain to Source On-State Resistance -
1.0
0
5
15
0
3.0
Pulsed
I
D
= 10 A
5.0 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.0
1.0
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance -
2.0
0
0
3.0
Pulsed
V
GS
= 10 V
20 V
Data Sheet D14060EJ1V0DS00
4
2SK3299
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
150
R
DS (on)
- Drain to Source On-state Resistance -
2.0
0
0
100
-
50
T
ch
- Channel Temperature - C
3.0
1.0
V
GS
= 10 V
5.0 A
Pulsed
I
D
= 10 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
1.5
1.0
0.5
0
100
10
1
0.1
0.01
Pulsed
0 V
V
GS
= 10 V
1000
100
10
1
0.1
10000
1000
100
10
1
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f=1 MHz
V
DS
- Drain to Source Voltage - V
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
0.1
1
10
100
I
D
- Drain Current - A
td
(on)
, tr, td
(off)
, tf - Switching Time - ns
100
10
1
0.1
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1
10
100
t
rr
- Reverse Recovery Time - s
0.1
I
D
- Drain Current - A
10
1
0.1
0.01
di/dt = 50 A/ s
V
GS
= 0 V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
0
20
10
30
40
800
600
400
200
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
16
14
12
10
8
6
4
2
0
I
D
= 10 A
V
GS
V
DD
= 450 V
300 V
150 V
V
DS
Data Sheet D14060EJ1V0DS00
5
2SK3299
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
100
80
60
40
20
0
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
0
80
20
40
60
100
140
120
160
80
60
40
20
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
10
30
50
70
FORWARD BIAS SAFE OPERATING AREA
10
100
1 000
I
D
- Drain Current - A
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
Po
wer Dissipation Limited
100
s
10
ms
1 ms
100
ms
PW
= 10
s
I
D(pulse)
I
D(DC)
3 ms
30 ms
T
C
= 25C
Single Pulse
R
DS(on)
Limited
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
R
th(t)
- Transient Thermal Resistance -
C/
W
100m
1
10
100
1 000
10m
1m
100
10
100
10
1
0.1
0.01
R
th(CH-A)
= 83.3 C/W
R
th(CH-C)
= 1.67 C/W
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