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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2000
MOS FIELD EFFECT TRANSISTOR
2SK3304
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D13992EJ1V0DS00 (1st edition)
Date Published
June 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3304 is N-Channel MOS FET device that features a
Low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching
power supply.
FEATURES
Low gate charge :
Q
G
= 44 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 7.0 A)
Gate voltage rating : 30 V
Low on-state resistance :
R
DS(on)
= 2.0
MAX. (V
GS
= 10 V, I
D
= 4.0 A)
Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
V
DSS
900
V
Gate to Source Voltage
V
GSS(AC)
30
V
Drain Current (DC)
I
D(DC)
7
A
Drain Current (Pulse)
Note1
I
D(pulse)
21
A
Total Power Dissipation (T
C
= 25C)
P
T
130
W
Total Power Dissipation (T
A
= 25C)
P
T
3.0
W
Storage Temperature
T
stg
55 to + 150
C
Single Avalanche Current
Note2
I
AS
7
A
Single Avalanche Energy
Note2
E
AS
147
mJ
Notes 1. PW
10
s, Duty cycle
1 %
2. Starting T
ch
= 25C, V
DD
= 150 V, R
G
= 25
,
V
GS
= 20 V
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3304
TO-3P
(TO-3P)
Data Sheet D13992EJ1V0DS00
2
2SK3304
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
I
DSS
V
DS
= 900 V, V
GS
= 0 V
100
A
Gate to Source Leakage Current
I
GSS
V
GS
= 30 V, V
DS
= 0 V
100
nA
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1.0 mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 20 V, I
D
= 4.0 A
2.5
4.7
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 4.0 A
1.6
2.0
Input Capacitance
C
iss
1300
pF
Output Capacitance
C
oss
240
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
55
pF
Turn-on Delay Time
t
d(on)
20
ns
Rise Time
t
r
44
ns
Turn-off Delay Time
t
d(off)
73
ns
Fall Time
t
f
V
DD
= 150 V
I
D
= 4.0 A
V
GS(on)
= 10 V
R
G
= 10
,
R
L
36
45
ns
Total Gate Charge
Q
G
44
nC
Gate to Source Charge
Q
GS
6
nC
Gate to Drain Charge
Q
GD
V
DD
= 450 V
V
GS
= 10 V
I
D
= 7.0 A
28
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 7.0 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
2.4
s
Reverse Recovery Charge
Q
rr
I
F
= 7.0 A, V
GS
= 0 V
di/dt = 50 A/
s
13.5
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS
(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D13992EJ1V0DS00
3
2SK3304
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature -
C
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
140
160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature -
C
P
T
- Total Power Dissipation - W
0
20
40
60
80
100
120
140
160
140
120
100
80
60
40
20
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
1
0.1
10
100
1
10
1000
100
T
C
= 25C
Single Pulse
R
DS(on)
Limited
(at V
GS
= 10
V)
P
W
=100
s
1 ms
10
ms
Po
w
er Dissipation Limited
I
D(pulse)
= 21 A
100
ms
I
D(DC)
=
7 A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
8
12
16
20
8
10
4
Pulsed
V
GS
= 6 V
6
4
2
V
GS
= 10 V
V
GS
= 20 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
0.1
0.01
1
10
100
0
10
15
5
Pulsed
T
A
= 125C
75C
25C
-
25C
Data Sheet D13992EJ1V0DS00
4
2SK3304
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - C/
W
10
0.001
0.01
0.1
1
100
1000
0.001
0.01
0.1
1
10
100
1000
0.0001
T
C
= 25C
Single Pulse
R
th(ch-A)
= 41.7 C
R
th(ch-C)
= 0.96 C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|
y
fs
| - Forward Transfer Admittance - S
V
DS
= 20 V
Pulsed
1
0.1
10
1
10
100
100
0.1
T
A
=
-
25C
25C
75C
125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance -
0 5 10 15 20 25
Pulsed
5.0
4.0
3.0
2.0
1.0
0.0
I
D
= 7 A
I
D
= 4 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance -
4.0
1
0.01
0.1
6.0
8.0
10
100
0.0
2.0
Pulsed
V
GS
= 10 V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
-
50
0
50
100
V
DS
= 10 V
I
D
= 1.0 mA
150
0.0
1.0
2.0
3.0
4.0
5.0
Data Sheet D13992EJ1V0DS00
5
2SK3304
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance -
-
50
0
50
100
150
I
D
= 4.0 A
5.0
4.0
3.0
2.0
1.0
0.0
V
GS
= 10 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
0.1
0.0
1
10
100
0.5
Pulsed
1.0
1.5
V
GS
= 10 V
V
GS
= 0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
10
1
100
1000
10000
10
100
1000
V
GS
= 0
V
f = 1 MHz
1
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.1
1
10
100
1000
1
10
100
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
t
d(off)
t
d(on)
t
r
t
f
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 50 A /
V
GS
= 0 V
s
0.1
10
1
10
100
1000
10000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
10
20
30
60
800
600
400
200
V
DD
= 450 V
300 V
150 V
I
D
= 7.0 A
14
12
10
8
6
4
2
0
40
50
V
DS
V
GS
V
GS
- Gate to Source Voltage - V
Data Sheet D13992EJ1V0DS00
6
2SK3304
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
AS
- Single Avalanche Current - A
1
10
100
V
DD
= 150 V
V
GS
= 20 V
0
V
R
G
= 25
Starting T
ch
= 25C
I
AS
= 7.0 A
0.0001
0.001
0.01
0.1
0.1
E
AS
= 147
mJ
SINGLE AVALANCHE ENERGY vs
STARTING CHANNEL TEMPERATURE
Starting T
ch
- Starting Channel Temperature - C
E
AS
- Single Avalanche Energy - mJ
25
50
75
100
150
125
100
75
50
25
0
125
150
V
DD
= 150 V
R
G
= 25
V
GS
= 20 V
0 V
I
D
(peak) = I
AS
175
E
AS
= 147 mJ
Data Sheet D13992EJ1V0DS00
7
2SK3304
PACKAGE DRAWING (Unit : mm)
TO-3P (MP-88)
EQUIVALENT CIRCUIT
Remark Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
15.7 MAX.
3.2
0.2
4.7 MAX.
1.5 TYP.
7.0 TYP.
2.8
0.1
1.0
0.2
0.6
0.1
2.2
0.2
5.45 TYP.
5.45 TYP.
18.7
0.4
4.5
0.2
1.0 TYP.
5.0 TYP.
3.4 MAX.
19 MIN.
20.5 MAX.
1: Gate
2: Drain
3: Source
4: Fin (Drain)
1
2
3
4
Source
Body
Diode
Gate
Drain
2SK3304
M8E 00. 4
The information in this document is current as of June, 2000. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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