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MOS FIELD EFFECT TRANSISTOR
2SK3322
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D14114EJ2V0DS00 (2nd edition)
Date Published August 2003 NS CP(K)
Printed in Japan
1999, 2000
The mark
shows major revised points.
DESCRIPTION
The 2SK3322 is N-Channel DMOS FET device that
features a low gate charge and excellent switching
characteristics, and designed for high voltage
applications such as switching power supply, AC
adapter.
FEATURES
Low gate charge :
Q
G
= 15 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 5.5 A)
Gate voltage rating :
30 V
Low on-state resistance :
R
DS(on)
= 2.2
MAX. (V
GS
= 10 V, I
D
= 2.8 A)
Avalanche capability ratings
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
30 V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
5.5 A
Drain Current (pulse)
Note1
I
D(pulse)
20 A
Total Power Dissipation (T
A
= 25C)
P
T1
1.5 W
Total Power Dissipation (T
C
= 25C)
P
T2
65 W
Channel Temperature
T
ch
150 C
Storage Temperature
T
stg
-
55 to +150
C
Single Avalanche Current
Note2
I
AS
4.0 A
Single Avalanche Energy
Note2
E
AS
10.7 mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 150 V, R
G
= 25
, V
GS
= 20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3322 TO-220AB
(MP-25)
2SK3322-S TO-262
2SK3322-ZJ TO-263(MP-25ZJ)
2SK3322-ZK TO-263(MP-25ZK)
Data Sheet D14114EJ2V0DS
2
2SK3322
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600 V, V
GS
= 0 V
100
A
Gate Leakage Current
I
GSS
V
GS
= 30 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 2.8 A
1.0
S
Drain to Source On-state Resistance
Note
R
DS(on)
V
GS
= 10 V, I
D
= 2.8 A
1.7
2.2
Input Capacitance
C
iss
V
DS
= 10 V,
550
pF
Output Capacitance
C
oss
V
GS
= 0 V,
115
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
13
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150 V, I
D
= 2.8 A,
12 Ns
Rise Time
t
r
V
GS
= 10 V,
10
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
35 ns
Fall Time
t
f
12 ns
Total Gate Charge
Q
G
V
DD
= 450 V,
15
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V,
4
nC
Gate to Drain Charge
Q
GD
I
D
= 5.5 A
4.4
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 5.5 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 5.5 A, V
GS
= 0 V,
1.6
s
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
s
5.3
C
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D14114EJ2V0DS
3
2SK3322
TYPICAL CHARACTERISTICS (T
A
= 25C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
40
50
20
30
5
10
0
0
8.0 V
6.0 V
Pulsed
V
GS
= 10 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
15
10
5
0
100
10
1
0.1
0.01
V
DS
= 10 V
Pulsed
T
ch
= 125
C
75
C
25
C
-
25
C
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
V
GS(off)
- Gate to Source Cut-off Voltage - V
-
50
0
50
100
150
5
4
3
2
1
0
V
DS
= 10 V
I
D
= 1 mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
10
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
10
0.1
1
0.1
V
DS
= 10 V
Pulsed
T
ch
=
-
25C
25C
75C
125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
2
V
GS
- Gate to Source Voltage - V
R
DS (on)
- Drain to Source On-State Resistance -
1
0
5
15
0
3
I
D
= 4.0 A
Pulsed
2.8 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1
0.1
1
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance -
2
0
3
V
GS
= 10 V
Pulsed
20 V
Data Sheet D14114EJ2V0DS
4
2SK3322
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
150
R
DS (on)
- Drain to Source On-State Resistance -
2
0
0
100
-
50
T
ch
- Channel Temperature -
C
3
1
V
GS
= 10 V
Pulsed
4
2.8 A
I
D
= 4.0 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
1.5
1
0.5
0
100
10
0
0.1
0.01
Pulsed
0 V
V
GS
= 10 V
100
10
1
0.1
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
1000
100
10
1
V
GS
=
0 V
f = 1 MH
Z
V
DS
- Drain to Source Voltage - V
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
0.1
1
10
I
D
- Drain Current - A
t
d(on)
,
t
r
,
t
d(off)
,
t
f
-
Switching
Time
-
ns
100
10
1
0.1
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
0.1
1
10
t
rr
- Reverse Recovery Time - ns
0.01
I
D
- Drain Current - A
10000
1000
100
10
di/dt = 50 A/
S
V
GS
= 0 V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
0
8
4
12
16
600
400
200
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
16
14
12
10
8
6
4
2
0
I
D
= 4.0 A
V
DD
= 450 V
300 V
150 V
V
DS
V
GS
Data Sheet D14114EJ2V0DS
5
2SK3322
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature -
C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
100
80
60
40
20
0
T
C
- Case Temperature -
C
P
T
- Total Power Dissipation - W
0
0
80
20
40
60
100
140
120
160
10
20
30
40
50
60
70
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
FORWARD BIAS SAFE OPERATING AREA
10
100
1000
I
D
- Drain Current - A
1
V
DS
- Drain to Source Voltage - V
0.1
1
10
100
Po
wer Dissipation Limited
PW = 10
s
100
s
10
ms
1 ms
R
DS
(on)
Limited
I
D(pulse)
I
D(DC)
T
C
= 25
C
Single Pulse
PW - Pulse Width - sec
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
R
th(ch-C)
= 1.93
C
/W
R
th(ch-A)
= 83.3
C
/W
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