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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3325
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D14264EJ1V0DS00 (1st edition)
Date Published
May 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3325 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge:
Q
G
= 22 nC TYP. (V
DD
= 400
V, V
GS
= 10
V, I
D
= 10
A)
Gate voltage rating:
30
V
Low on-state resistance
R
DS(on)
= 0.85
MAX. (V
GS
= 10 V, I
D
= 5.0 A)
Avalanche capability ratings
TO-220AB, TO-262, TO-263 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
500
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(AC)
30
V
Drain Current (DC)
I
D(DC)
10
A
Drain Current (pulse)
Note1
I
D(pulse)
40
A
Total Power Dissipation (T
C
= 25C)
P
T
85
W
Total Power Dissipation (T
A
= 25C)
P
T
1.5
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
10
A
Single Avalanche Energy
Note2
E
AS
10.7
mJ
Notes 1. PW
10
s, Duty Cycle
1 %
2. Starting T
ch
= 25
C, V
DD
= 150
V, R
G
= 25
, V
GS
= 20
V
0
V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3325
TO-220AB
2SK3325-S
TO-262
2SK3325-ZJ
TO-263
(TO-220AB)
(TO-262)
(TO-263)
Data Sheet D14264EJ1V0DS00
2
2SK3325
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
I
DSS
V
DS
= 500
V, V
GS
= 0
V
100
A
Gate to Source Leakage Current
I
GSS
V
GS
=
30
V, V
DS
= 0
V
100
nA
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 5.0 A
2.0
4.0
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10
V, I
D
= 5.0
A
0.68
0.85
Input Capacitance
C
iss
1200
pF
Output Capacitance
C
oss
190
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10
V, V
GS
= 0
V, f = 1
MHz
10
pF
Turn-on Delay Time
t
d(on)
21
ns
Rise Time
t
r
11
ns
Turn-off Delay Time
t
d(off)
40
ns
Fall Time
t
f
V
DD
= 150
V, I
D
= 5.0
A, V
GS(on)
= 10
V,
R
G
= 10
,
R
L
= 60
9.5
ns
Total Gate Charge
Q
G
22
nC
Gate to Source Charge
Q
GS
6.5
nC
Gate to Drain Charge
Q
GD
V
DD
= 400
V, V
GS
= 10
V, I
D
= 10
A
7.5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 10
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
0.5
s
Reverse Recovery Charge
Q
rr
I
F
= 10
A, V
GS
= 0
V, di/dt = 50
A
/
s
2.6
C
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
0
0
90 %
90 %
90 %
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10 %
10 %
Data Sheet D14264EJ1V0DS00
3
2SK3325
TYPICAL CHARACTERISTICS(T
A
= 25 C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
40
60
100
120
140
160
20
40
60
80
100
T
c
- Case Temperature - C
dT - Percentage of Rated Power - %
0
20
80
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
40
60
80
100
120
140
160
T
c
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
100
80
60
40
20
Figure3. FORWARD BIAS SAFE OPERATING AREA
100
10
0.1
10
100
1000
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
1
1
Power Dissipation Limited
10 ms
I
D (DC)
I
D (pulse)
100
s
T
c
= 25 C
Single Pulse
PW = 10
s
1ms
R
DS(on)
Limited
(at V
GS
= 10 V)
Figure4. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0
4
8
12
16
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
20
10
Pulsed
V
GS
= 20 V
10 V
8.0 V
V
GS
= 6.0 V
Figure5. DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
0
V
GS
- Gate to Source Voltage - V
Pulsed
100
10
0.0001
0.001
I
D
- Drain Current - A
0.01
0.1
1
5
10
15
T
A
= 25 C
25 C
75 C
125 C
Data Sheet D14264EJ1V0DS00
4
2SK3325
Figure6. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
0.1
0.0001 0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
r
th (t)
- Transient Thermal Resistance - C/W
T
c
= 25 C
Single Pulse
0.01
R
th(ch-C)
= 1.47 C/W
R
th(ch-A)
= 83.0 C/W
Figure7. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
1
0.1
1
10
Iy
fs
I - Forward Transfer Admittance - S
I
D
- Drain Current - A
0.01
0.01
100
0.1
T
A
= 25 C
25 C
75 C
125 C
V
DS
= 10 V
Pulsed
Figure8. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
15
20
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance -
Pulsed
25
0
5
0.0
2.0
1.0
I
D
= 10 A
5.0 A
2.0 A
R
DS(on)
- Drain to Source On-state Resistance -
3.0
2.0
0
Figure9. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.1
10
I
D
- Drain Current - A
1
Pulsed
1.0
100
V
GS(off)
- Gate to Source Cut-off Voltage - V
1.0
0.0
50
0
50
100
150
200
T
ch
- Channel Temperature - C
Figure10. GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
3.0
4.0
V
DS
= 10 V
I
D
= 1 mA
Data Sheet D14264EJ1V0DS00
5
2SK3325
Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
3.0
2.0
1.0
0.0
50
0
50
100
150
V
GS
= 10 V
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance -
I
D
= 10 A
I
D
= 5.0 A
Figure12. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
1
0.5
0.1
1.5
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
Pulsed
1.0
0.0
0.01
100
V
GS
= 0 V
V
GS
= 10 V
Figure13. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
10
100
1
100
1000
V
DS
- Drain to Source Voltage - V
V
GS
= 0 V
f = 1.0 MHz
10
10000
C
iss
0.1
1
C
oss
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
rss
Figure14. SWITCHING CHARACTERISTICS
1000
100
10
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.1
100
I
D
- Drain Current - A
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
t
f
t
d(off)
t
d(on)
1
10
1
t
r
Figure15. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
0
0.1
10
100
t
rr
- Reverse Recovery Time - ns
I
F
- Drain Current - A
di/dt = 50 A/
s
V
GS
= 0 V
1
100
500
600
700
800
900
1000
400
300
200
10
5
20
25
15
400
500
600
700
800
300
200
100
V
DS
V
GS
I
D
= 10 A
V
DS
- Drain to Source Voltage - V
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
14
12
10
8
6
4
2
V
DD
= 400 V
250 V
100 V
0
0
Data Sheet D14264EJ1V0DS00
6
2SK3325
Figure17. SINGLE AVALANCHE ENERGY vs
STARTING CHANNEL TEMPERATURE
16
14
12
10
8
6
4
2
0
25
E
AS
- Single Avalanche Energy - mJ
50
75
100
125
I
D(peak)
= I
AS
R
G
= 25
V
GS
= 20 V
0 V
V
DD
= 150 V
150
175
E
AS
= 10.7 mJ
Starting T
ch
- Starting Channel Temperature - C
Figure18. SINGLE AVALANCHE ENERGY vs
INDUCTIVE LOAD
100
10
1
I
AS
- Single Avalanche Energy - A
I
AS
= 10 A
E
AS
= 10.7 mJ
R
G
= 25
V
DD
= 150 V
V
GS
= 20 V
0 V
Starting T
ch
= 25 C
L - Inductive Load - H
0.1
1 m
10 m
10
100
Data Sheet D14264EJ1V0DS00
7
2SK3325
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
2)TO-262 (MP-25 Fin Cut)
3)TO-263 (MP-25ZJ)
EQUIVALENT CIRCUIT
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0
3.60.2
4
3.00.3
1.30.2
0.750.1
2.54 TYP.
2.54 TYP.
5.9 MIN.
6.0 MAX.
15.5 MAX.
12.7 MIN.
1.30.2
0.50.2
2.80.2
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
(10)
4
1.30.2
0.750.3
2.54 TYP.
2.54 TYP.
8.5
0.2
12.7 MIN.
1.30.2
0.50.2
2.80.2
1.00
.
5
(10)
1.40.2
1.00.5
2.54 TYP.
2.54 TYP.
8.50.2
1
2
3
5.70.4
4
2.80.2
4.8 MAX.
1.30.2
0.50.2
(0.5R)
(0.8R)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.70.2
Source
Body
Diode
Gate
Drain
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as
much as possible, and quickly dissipate it once, when it has occurred.
2SK3325
M8E 00. 4
The information in this document is current as of May, 2000. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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