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Электронный компонент: 2SK3326

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2000
MOS FIELD EFFECT TRANSISTOR
2SK3326
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D14204EJ1V0DS00 (1st edition)
Date Published
March 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3326 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge :
Q
G
= 22 nC TYP. (V
DD
= 400
V, V
GS
= 10
V, I
D
= 10
A)
Gate voltage rating :
30
V
Low on-state resistance :
R
DS(on)
= 0.85
MAX. (V
GS
= 10 V, I
D
= 5.0 A)
Avalanche capability ratings
Isolated TO-220(MP-45F) package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
500
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(AC)
30
V
Drain Current (DC)
I
D(DC)
10
A
Drain Current (pulse)
Note1
I
D(pulse)
40
A
Total Power Dissipation (T
C
= 25C)
P
T
40
W
Total Power Dissipation (T
A
= 25C)
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
10
A
Single Avalanche Energy
Note2
E
AS
10.7
mJ
Notes 1. PW
10
s, Duty Cycle
1 %
2. Starting T
ch
= 25
C, V
DD
= 150
V, R
G
= 25
, V
GS
= 20 V
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3326
Isolated TO-220
(Isolated TO-220)
Data Sheet D14204EJ1V0DS00
2
2SK3326
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
I
DSS
V
DS
= 500
V, V
GS
= 0
V
100
A
Gate to Source Leakage Current
I
GSS
V
GS
=
30
V, V
DS
= 0
V
100
nA
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 5.0 A
2.0
4.0
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10
V, I
D
= 5.0
A
0.68
0.85
Input Capacitance
C
iss
1200
pF
Output Capacitance
C
oss
190
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10
V, V
GS
= 0
V, f = 1
MHz
10
pF
Turn-on Delay Time
t
d(on)
21
ns
Rise Time
t
r
11
ns
Turn-off Delay Time
t
d(off)
40
ns
Fall Time
t
f
V
DD
= 150
V, I
D
= 5.0
A, V
GS(on)
= 10
V,
R
G
= 10
,
R
L
= 60
9.5
ns
Total Gate Charge
Q
G
22
nC
Gate to Source Charge
Q
GS
6.5
nC
Gate to Drain Charge
Q
GD
V
DD
= 400
V, V
GS
= 10
V, I
D
= 10
A
7.5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 10
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
0.5
s
Reverse Recovery Charge
Q
rr
I
F
= 10
A, V
GS
= 0
V, di/dt = 50
A
/
s
2.6
C
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
0
0
90 %
90 %
90 %
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10 %
10 %
Data Sheet D14204EJ1V0DS00
3
2SK3326
TYPICAL CHARACTERISTICS(T
A
= 25 C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
40
60
100
120
140
160
20
40
60
80
100
T
c
- Case Temperature - C
dT - Percentage of Rated Power - %
0
20
80
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
40
60
80
100
120
140
160
T
c
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
50
40
30
20
10
Figure3. FORWARD BIAS SAFE OPERATING AREA
100
10
0.1
10
100
1000
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
1
1
Power Dissipation Limited
10 ms
I
D (DC)
I
D (pulse)
100
s
T
c
= 25 C
Single Pulse
PW = 10
s
1ms
R
DS(on)
Limited
(at V
GS
= 10 V)
100 ms
Figure4. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0
4
8
12
16
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
20
10
Pulsed
V
GS
= 20 V
10 V
8.0 V
V
GS
= 6.0 V
Figure5. DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
0
V
GS
- Gate to Source Voltage - V
Pulsed
100
10
0.0001
0.001
I
D
- Drain Current - A
0.01
0.1
1
5
10
15
T
A
= 25 C
25 C
75 C
125 C
Data Sheet D14204EJ1V0DS00
4
2SK3326
Figure6. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
0.1
0.0001 0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
r
th (t)
- Transient Thermal Resistance - C/W
T
c
= 25 C
Single Pulse
0.01
R
th(ch-C)
= 3.2 C/W
R
th(ch-A)
= 62.5 C/W
Figure7. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
1
0.1
1
10
Iy
fs
I - Forward Transfer Admittance - S
I
D
- Drain Current - A
0.01
0.01
100
0.1
T
A
= 25 C
25 C
75 C
125 C
V
DS
= 10 V
Pulsed
Figure8. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
15
20
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance -
Pulsed
25
0
5
0.0
2.0
1.0
I
D
= 10 A
5.0 A
2.0 A
R
DS(on)
- Drain to Source On-state Resistance -
3.0
2.0
0
Figure9. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.1
10
I
D
- Drain Current - A
1
Pulsed
1.0
100
V
GS(off)
- Gate to Source Cut-off Voltage - V
1.0
0.0
50
0
50
100
150
200
T
ch
- Channel Temperature - C
Figure10. GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
3.0
4.0
V
DS
= 10 V
I
D
= 1 mA
Data Sheet D14204EJ1V0DS00
5
2SK3326
Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
3.0
2.0
1.0
0.0
50
0
50
100
150
V
GS
= 10 V
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance -
I
D
= 10 A
I
D
= 5.0 A
Figure12. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
1
0.5
0.1
1.5
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
Pulsed
1.0
0.0
0.01
100
V
GS
= 0 V
V
GS
= 10 V
Figure13. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
10
100
1
100
1000
V
DS
- Drain to Source Voltage - V
V
GS
= 0 V
f = 1.0 MHz
10
10000
C
iss
0.1
1
C
oss
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
rss
Figure14. SWITCHING CHARACTERISTICS
1000
100
10
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.1
100
I
D
- Drain Current - A
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
t
f
t
d(off)
t
d(on)
1
10
1
t
r
Figure15. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
0
0.1
10
100
t
rr
- Reverse Recovery Time - ns
I
F
- Drain Current - A
di/dt = 50 A/
s
V
GS
= 0 V
1
100
500
600
700
800
900
1000
400
300
200
10
5
20
25
15
400
500
600
700
800
300
200
100
V
DS
V
GS
I
D
= 10 A
V
DS
- Drain to Source Voltage - V
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
14
12
10
8
6
4
2
V
DD
= 400 V
250 V
100 V
0
0