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1999
MOS FIELD EFFECT TRANSISTOR
2SK3366
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D14256EJ1V0DS00 (1st edition)
Date Published
August 1999 NS CP(K)
Printed in Japan
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3366
TO-251
2SK3366-Z
TO-252
DESCRIPTION
The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook
computers.
FEATURES
Low on-resistance
R
DS(on)1
= 21 m
(MAX.) (V
GS
= 10 V, I
D
= 10 A)
R
DS(on)2
= 33 m
(MAX.) (V
GS
= 4.5 V, I
D
= 10 A)
R
DS(on)3
= 43 m
(MAX.) (V
GS
= 4.0 V, I
D
= 10 A)
Low C
iss
: C
iss
= 730 pF (TYP.)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC)
I
D(DC)
20
A
Drain Current (Pulse)
Note
I
D(pulse)
80
A
Total Power Dissipation (T
C
= 25 C)
P
T
30
W
Total Power Dissipation (T
A
= 25 C)
P
T
1.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to + 150
C
Note PW
10
s, Duty cycle
1 %
THERMAL RESISTANCE
Channel to case
R
th(ch-C)
4.17
C/W
Channel to ambient
R
th(ch-A)
125
C/W
Data Sheet D14256EJ1V0DS00
2
2SK3366
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 10 A
17.2
21
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 10 A
26
33
m
R
DS(on)3
V
GS
= 4.0 V, I
D
= 10 A
33
43
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 10 A
5
10
S
Drain Leakage Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
A
Gate to Source Leakage Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
10
A
Input Capacitance
C
iss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
730
pF
Output Capacitance
C
oss
250
pF
Reverse Transfer Capacitance
C
rss
120
pF
Turn-on Delay Time
t
d(on)
I
D
= 10 A, V
GS(on)
= 10 V, V
DD
= 15 V,
28
ns
Rise Time
t
r
R
G
= 10
420
ns
Turn-off Delay Time
t
d(off)
47
ns
Fall Time
t
f
64
ns
Total Gate Charge
Q
G
I
D
= 20 A, V
DD
= 24 V, V
GS
= 10 V
15
nC
Gate to Source Charge
Q
GS
2.8
nC
Gate to Drain Charge
Q
GD
4.1
nC
Body Diode forward Voltage
V
F(S-D)
I
F
= 20 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 20 A, V
GS
= 0 V
30
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
26
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
R
L
V
DD
R
G
R
G
=
10
PG.
Duty Cycle
1 %
V
GS (on)
90 %
0
10 %
90 %
I
D
0
10 %
I
D
V
GS
90 %
10 %
t
d (on)
t
on
t
off
t
r
t
d (off)
t
f
V
GS
Wave Form
I
D
Wave Form
D.U.T.
50
PG.
V
DD
I
G
=
2
mA
R
L
0
V
GS
t
s
t = 1
Data Sheet D14256EJ1V0DS00
3
2SK3366
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
140
160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
20
40
60
80
100
120
140
160
35
30
25
20
15
10
5
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
- Drain Current - A
0.1
1.0
10
100
1.0
10
100
T
C
= 25C
Single Pulse
Power Dissipation Limited
I
D(DC)
=20 A
R
DS(on)
Limited
(at V
GS
=10 V)
1 ms
10 ms
PW = 100
s
I
D(PULSE)
=
80 A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
2
3
4
60
1
Pulsed
V
GS
=10 V
20
4.5 V
4.0 V
40
80
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
0.01
1
0.1
10
100
Pulsed
0
1
4
3
2
T
A
= 150C
75C
25C
-
25C
-
50C
5
6
0.001
Data Sheet D14256EJ1V0DS00
4
2SK3366
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance -
C
/W
0.1
1
10
100
1000
1 m
10 m
100 m
1
10
100
1000
100
Single Pulse
R
th(ch-A)
= 125 C/W
R
th(ch-C)
= 4.17 C/W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
V
DS
= 10 V
Pulsed
0.1
1
1
10
100
10
100
0.1
T
ch
=
-
50C
-
25C
25C
75C
150C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
0
5
10
10
15
Pulsed
30
40
50
20
I
D
= 10 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
40
60
Pulsed
0
10 V
20
V
GS
= 4.0 V
4.5 V
0.1
1
10
100
80
100
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
-
50
0
50
100
150
0
1
2
3
2.5
1.5
0.5
Data Sheet D14256EJ1V0DS00
5
2SK3366
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
0
-
50
20
10
0
50
100
150
I
D
= 10 A
40
50
30
10 V
4.5 V
V
GS
= 4.0 V
1.0
1.2
I
SD
- Diode Forward Current - A
0
1.6
1.4
V
SD
- Source to Drain Voltage - V
0.2
0.4
0.6
0.8
Pulsed
V
GS
= 10 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.1
1
10
100
0 V
4.5 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.1
0.01
100
1000
10000
1
10
100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1
0.1
10
100
10000
1000
1
10
100
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
t
f
t
r
t
d(on)
t
d(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Diode Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/
s
V
GS
= 0 V
1
0.1
10
1
10
100
1000
100
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
10
20
10
20
30
40
2
4
6
8
0
V
DD
= 24 V
15 V
6 V
V
DS
12
14
10
I
D
= 20 A
V
GS
5
15
Data Sheet D14256EJ1V0DS00
6
2SK3366
PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2
1
3
6.50.2
5.00.2
4
1.5-
0.1
+0.2
5.50.2
7.0 MAX.
13.7 MIN.
2.3
2.3
0.75
0.50.1
2.30.2
1.60.2
1.10.2
0.5-
0.1
+0.2
0.5-
0.1
+0.2
2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
4
6.50.2
5.00.2
4.3 MAX.
0.8
2.3 2.3
0.9
MAX.
5.50.2
10.0 MAX.
2.0 MIN.
1.5-
0.1
+0.2
2.30.2
0.50.1
0.8
MAX.
0.8
1.0 MIN.
1.8 TYP.
0.7
1.10.2
EQUIVALENT CIRCUIT
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet D14256EJ1V0DS00
7
2SK3366
[MEMO]
2SK3366
[MEMO]
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
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The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
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