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MOS FIELD EFFECT TRANSISTOR
2SK3402
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D14473EJ3V1DS00 (3rd edition)
Date Published October 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1999, 2000
DESCRIPTION
The 2SK3402 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low On-State Resistance
R
DS(on)1
= 15 m
MAX. (V
GS
= 10 V, I
D
= 18 A)
R
DS(on)2
= 22 m
MAX. (V
GS
= 4.0 V, I
D
= 18 A)
Low C
iss
: C
iss
= 3200 pF TYP.
Built-in Gate Protection Diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
36
A
Drain Current (pulse)
Note1
I
D(pulse)
144 A
Total Power Dissipation (T
C
= 25C)
P
T1
40
W
Total Power Dissipation (T
A
= 25C)
P
T2
1.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
35
A
Single Avalanche Energy
Note2
E
AS
123
mJ
Notes 1. PW
10
s, Duty cycle
1%
2.
Starting T
ch
= 25C, V
DD
= 30 V, R
G
= 25
,
V
GS
= 20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3402 TO-251
(MP-3)
2SK3402-Z TO-252
(MP-3Z)
(TO-251)
(TO-252)
Data Sheet D14473EJ3V1DS
2
2SK3402
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 18 A
13
27
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 18 A
12
15
m
R
DS(on)2
V
GS
= 4.0 V, I
D
= 18 A
15
22
m
Input Capacitance
C
iss
V
DS
= 10 V
3200
pF
Output Capacitance
C
oss
V
GS
= 0 V
520
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
270
pF
Turn-on Delay Time
t
d(on)
V
DD
= 30 V, I
D
= 18 A
36 ns
Rise Time
t
r
V
GS
= 10 V
310
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
170
ns
Fall Time
t
f
180 ns
Total Gate Charge
Q
G
V
DD
= 48 V
61
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
8.2
nC
Gate to Drain Charge
Q
GD
I
D
= 36 A
17
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 36 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 36 A, V
GS
= 0 V
48
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
89
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D14473EJ3V1DS
3
2SK3402
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
100
80
60
40
20
0
TYPICAL CHARACTERISTICS (T
A
= 25C)
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
R
th(ch-C)
= 3.13C/W
R
th(ch-A)
= 125C/W
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
10
20
30
40
50
70
60
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
1
0.1
100
0.1
1000
1
10
100
I
D(pulse)
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(DC)
PW = 10
s
1 ms
10 ms
DC
Pow
er Dissipation
Limited
T
C
= 25C
Single Pulse
100
s
Data Sheet D14473EJ3V1DS
4
2SK3402
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Pulsed
1
2
3
4
5
6
V
DS
= 10 V
1
0.1
0.01
10
100
T
A
=
-
55C
25C
75C
150C
Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
2
3
4
80
200
160
120
1
0
V
GS
= 10 V
40
4.0 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
V
DS
= 10 V
Pulsed
0.01
0.1
1
10
100
10
100
0.01
0.1
1
T
A
= 150C
75C
25C
-
55C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
0
2
4
6
8
10
12
14
16 18 20
40
50
0
20
10
30
I
D
= 18 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
100
10
1
5
10
15
20
25
30
35
40
1000
Pulsed
0
V
GS
= 4.0 V
10 V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(th)
- Gate to Source Threshold Voltage - V
0.5
V
DS
= 10 V
I
D
= 1 mA
1.0
1.5
2.0
2.5
3.0
-
50
0
50
100
150
0
Data Sheet D14473EJ3V1DS
5
2SK3402
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
0
-
50
20
25
30
10
15
5
0
50
100
150
I
D
= 18 A
10 V
V
GS
= 4.0 V
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
1.5
V
F(S-D)
- Body Diode Forward Voltage - V
0.5
0
Pulsed
0.1
1
10
100
1000
V
GS
= 0 V
V
GS
= 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.1
100
1000
10000
1
10
100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
1
1
0.1
100
1000
10
100
t
f
t
r
t
d(on)
t
d(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
1
0.1
10
1
10
100
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
0
50
60
70
80
10
20
30
40
20
10
40
30
60
50
80
70
V
DS
16
14
12
10
8
6
4
2
V
GS
I
D
= 36 A
V
DD
= 48 V
30 V
12 V
Data Sheet D14473EJ3V1DS
6
2SK3402
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
AS
- Single Avalanche Current - A
1
10
100
1 m
10 m
V
DD
= 30 V
R
G
= 25
V
GS
= 20
0
V
I
AS
= 35 A
10
100
0.1
E
AS
= 123
mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - C
Energy Derating Factor - %
25
50
75
100
160
140
120
100
80
60
40
20
0
125
150
V
DD
= 30 V
R
G
= 25
V
GS
= 20
0 V
I
AS
35 A
Data Sheet D14473EJ3V1DS
7
2SK3402
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2
1
3
6.50.2
5.00.2
4
1.5-
0.1
+0.2
5.50.2
7.0 MIN.
13.7 MIN.
2.3
2.3
0.75
0.50.1
2.30.2
1.60.2
1.10.2
0.5-
0.1
+0.2
0.5-
0.1
+0.2
2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
4
6.50.2
5.00.2
4.3 MAX.
0.8
2.3 2.3
0.9
MAX.
5.50.2
10.0 MAX.
2.0 MIN.
1.5-
0.1
+0.2
2.30.2
0.50.1
0.8
MAX.
0.8
1.0 MIN.
1.8 TYP.
0.7
1.10.2
EQUIVALENT CIRCUIT
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
2SK3402
The information in this document is current as of October, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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