The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2000
MOS FIELD EFFECT TRANSISTOR
2SK3456
SWITCHING
N-CHANNEL POWER MOS FET
Document No.
D14753EJ1V0DS00 (1st edition)
Date Published
May 2002 NS CP(K)
Printed in Japan
DATA SHEET
DESCRIPTION
The 2SK3456 is N-channel DMOS FET device that
features a low gate charge and excellent switching
characteristics, designed for high voltage applications such
as switching power supply, AC adapter.
FEATURES
Low gate charge
Q
G
= 30 nC TYP. (V
DD
= 400 V, V
GS
= 10 V, I
D
= 12 A)
Gate voltage rating
30 V
Low on-state resistance
R
DS(on)
= 0.60
MAX. (V
GS
= 10 V, I
D
= 6.0 A)
Avalanche capability ratings
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C
)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
500
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
30
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
12
A
Drain Current (Pulse)
Note1
I
D(pulse)
36
A
Total Power Dissipation (T
A
= 25C)
P
T1
1.5
W
Total Power Dissipation (T
C
= 25C)
P
T2
100
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-
55 to +150
C
Single Avalanche Current
Note2
I
AS
12
A
Single Avalanche Energy
Note2
E
AS
103
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 150 V, R
G
= 25
,
V
GS
= 20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3456
TO-220AB
2SK3456-S
TO-262
2SK3456-ZJ
TO-263
Data Sheet D14753EJ1V0DS
2
2SK3456
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 500 V, V
GS
= 0 V
100
A
Gate Leakage Current
I
GSS
V
GS
=
30 V, V
DS
= 0 V
100
nA
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 6.0 A
2.0
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 6.0 A
0.48
0.60
Input Capacitance
C
iss
V
DS
= 10 V
1620
pF
Output Capacitance
C
oss
V
GS
= 0 V
250
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
10
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150 V, I
D
= 6.0 A
24
ns
Rise Time
t
r
V
GS
= 10 V
18
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
50
ns
Fall Time
t
f
15
ns
Total Gate Charge
Q
G
V
DD
= 400 V
30
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
9
nC
Gate to Drain Charge
Q
GD
I
D
= 12 A
11
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 12 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 12 A, V
GS
= 0 V
1.5
s
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
s
11
C
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10%
0
0
90%
90%
90%
V
GS
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D14753EJ1V0DS
3
2SK3456
TYPICAL CHARACTERISTICS (T
A
= 25C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
0
20
30
40
10
10
20
30
5
15
25
35
V
GS
= 20 V
Pulsed
10 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
-
Gate to Source Voltage - V
I
D
- Drain Current - A
0.001
0.1
0.01
1
10
100
0
10
5
15
-
50C
-
25C
25C
125C
75C
T
A
=
150C
Pulsed
V
DS
= 10 V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
-
50
0
150
50
0
1.0
100
2.0
3.0
4.0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - S
I
D
- Drain Current - A
1
1
0.1
0.01
10
100
10
100
0.1
-
25C
25C
75C
125C
T
A
=
-
50C
150C
V
DS
= 10 V
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance -
0
0
5
0.4
10
15
20
1.2
1.4
0.8
0.2
1.0
0.6
Pulsed
6.0 A
2.4
A
I
D
= 12
A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance -
1
0.1
1.5
0.9
0.3
0
1.2
0.6
10
100
Pulsed
V
GS
= 10 V
20 V
Data Sheet D14753EJ1V0DS
4
2SK3456
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance -
-
50
1.6
1.4
1.2
1.0
0.6
0.4
0.2
0
0
50
100
150
0.8
12 A
I
D
= 6.0 A
V
GS
= 10 V
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
0.01
0
0.1
1
10
0.5
1.0
1.5
100
V
GS
= 10 V
0 V
Pulsed
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
0.1
100
1000
10000
1
0.1
10
1
10
1000
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
1
0.1
1
0.1
1000
100
10
100
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
t
f
t
r
t
d(on)
t
d(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
0.1
10
1
1
10
100
100
1000
10000
di/dt = 50
A/ s
V
GS
= 0 V
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
5
10
15
20
25
30
35
200
400
600
2
4
6
8
0
0
0
10
12
I
D
= 12 A
V
DS
V
DD
= 400 V
250 V
125 V
V
GS
Data Sheet D14753EJ1V0DS
5
2SK3456
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
0
0
20
40
60
80
100
120
140
160
20
40
60
80
100
10
30
50
70
90
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
0
20
40
60
80
100
120
140
160
120
100
80
60
40
20
FORWARD BIAS SAFE OPERATING AREA
V
DS
-
Drain to Source Voltage - V
I
D
- Drain Current - A
0.1
1
10
100
100
1000
T
C
= 25C
Single Pulse
1
10
R
DS(on)
Limited
I
D(DC)
I
D(pulse)
PW = 10
s
100
s
1 ms
3 ms
10 ms
30 ms
100 ms
Power Dissipation Limited
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance -
C
/W
1000
100
0.1
0.001
0.01
1
10
100 m
1
10
100
1000
10
100
1 m
10 m
R
th(ch-C)
= 1.25C/W
R
th(ch-A)
= 83.3C/W
Single Pulse
Data Sheet D14753EJ1V0DS
6
2SK3456
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - mH
I
AS
- Single Avalanche Current - A
1
10
100
1
10
V
DD
= 150 V
V
GS
= 20
0
V
R
G
= 25
I
AS
= 12 A
0.01
0.1
0.1
E
AS
= 103 mJ
Starting T
ch
= 25C
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - C
Energy Derating Factor - %
25
50
75
100
120
100
80
60
40
20
0
125
150
V
DD
= 150 V
R
G
= 25
V
GS
= 20
0 V
I
AS
12 A
Data Sheet D14753EJ1V0DS
7
2SK3456
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.60.2
4
3.00.3
1.30.2
0.750.1
2.54 TYP.
2.54 TYP.
5.9 MIN.
6.0 MAX.
15.5 MAX.
12.7 MIN.
1.30.2
0.50.2
2.80.2
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.30.2
0.750.3
2.54 TYP.
2.54 TYP.
8.5
0.2
12.7 MIN.
1.30.2
0.50.2
2.80.2
1.00
.
5
4
3) TO-263 (MP-25ZJ)
1.40.2
1.00.5
2.54 TYP.
2.54 TYP.
8.50.2
1
2
3
5.70.4
4
4.8 MAX.
1.30.2
0.50.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.70.2
10 TYP.
0.5R TYP.
0.8R TYP.
2.80.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
2SK3456
M8E 00. 4
The information in this document is current as of May, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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