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2002
MOS FIELD EFFECT TRANSISTOR
2SK3481
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D15063EJ1V0DS00 (1st edition)
Date Published
January 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3481 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)1
= 50
m
MAX. (V
GS
= 10
V, I
D
= 15
A)
R
DS(on)2
= 58
m
MAX. (V
GS
= 4.5
V, I
D
= 15
A)
Low C
iss
: C
iss
= 2300
pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
100
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
30
A
Drain Current (pulse)
Note1
I
D(pulse)
60
A
Total Power Dissipation (T
C
= 25C)
P
T1
56
W
Total Power Dissipation (T
A
= 25C)
P
T2
1.5
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
26
A
Single Avalanche Energy
Note2
E
AS
68
mJ
Notes 1. PW
10
s, Duty cycle
1%
2. Starting T
ch
= 25C, V
DD
= 50 V, R
G
= 25
,
V
GS
= 20
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R
th(ch-C)
2.23
C/W
Channel to Ambient Thermal Resistance
R
th(ch-A)
83.3
C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3481
TO-220AB
2SK3481-S
TO-262
2SK3481-ZJ
TO-263
2SK3481-Z
TO-220SMD
Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
Data Sheet D15063EJ1V0DS
2
2SK3481
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 100
V, V
GS
= 0
V
10
A
Gate Leakage Current
I
GSS
V
GS
= 20
V, V
DS
= 0
V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 15
A
9
18
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 15
A
40
50
m
R
DS(on)2
V
GS
= 4.5
V, I
D
= 15
A
44
58
m
Input Capacitance
C
iss
V
DS
= 10
V
2300
pF
Output Capacitance
C
oss
V
GS
= 0
V
230
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
120
pF
Turn-on Delay Time
t
d(on)
V
DD
= 50
V, I
D
= 15
A
13
ns
Rise Time
t
r
V
GS
= 10
V
10
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
53
ns
Fall Time
t
f
5.0
ns
Total Gate Charge
Q
G
V
DD
= 80
V
48
nC
Gate to Source Charge
Q
GS
V
GS
= 10
V
7.0
nC
Gate to Drain Charge
Q
GD
I
D
= 30
A
12
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 30
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 30
A, V
GS
= 0
V
70
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A/
s
160
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D15063EJ1V0DS
3
2SK3481
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
120
100
80
60
40
20
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
0
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
10
1
0.1
100
0.1
1
10
100
T
C
= 25C
Single Pulse
1000
10 ms
I
D(pulse)
I
D(DC)
1 ms
100
s
10
s
DC
Po
w
er Dissipation
Limited
R
DS(on)
Limited
(at V
GS
= 10 V)
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
R
th(ch-C)
= 2.23C/W
R
th(ch-A)
= 83.3C/W
T
C
= 25C
Data Sheet D15063EJ1V0DS
4
2SK3481
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Pulsed
1
2
3
4
5
1
0.1
0.01
10
100
T
A
=
-
40C
25C
75C
150C
T
A
=
-
40C
25C
75C
150C
V
DS
= 10 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
2
3
4
1
0
0
20
60
40
80
5
6
V
GS
= 10 V
4.5 V
Pulsed
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
0.01
0.1
1
10
100
10
100
0.1
0.01
1
Pulsed
V
DS
= 10 V
T
A
= 150C
75C
25C
-
40C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
5
0
10
15
20
Pulsed
80
60
40
20
0
15 A
I
D
= 30 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
1
0.1
80
60
40
20
0
10
100
Pulsed
V
GS
= 4.5 V
10 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
1
2
3
4
-
50
0
50
100
150
0
Data Sheet D15063EJ1V0DS
5
2SK3481
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
-
50
0
0
20
40
60
80
100
120
50
100
150
Pulsed
I
D
= 15 A
10 V
V
GS
= 4.5 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
0
1.5
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
0.01
0.1
1
10
100
0 V
V
GS
= 10 V
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.01
100
1000
10000
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
rss
C
oss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
1
1
0.1
100
1000
10
100
V
DD
= 50 V
V
GS
= 10 V
R
G
= 0
t
f
t
r
t
d(on)
t
d(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
1
0.1
10
1
10
100
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
20
0
0
20
40
60
80
100
0
2
4
6
8
10
40
60
10
30
50
I
D
= 30 A
V
DD
= 80 V
50 V
20 V
V
DS
V
GS
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