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MOS FIELD EFFECT TRANSISTOR
2SK3482
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15064EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001
DESCRIPTION
The 2SK3482 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
R
DS(on)1
= 33 m
MAX. (V
GS
= 10 V, I
D
= 18 A)
R
DS(on)2
= 39 m
MAX. (V
GS
= 4.5 V, I
D
= 18 A)
Low C
iss
: C
iss
= 3600 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
100
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC)
I
D(DC)
36
A
Drain Current (Pulse)
Note1
I
D(pulse)
100 A
Total Power Dissipation (T
C
= 25C)
P
T
50
W
Total Power Dissipation (T
A
= 25C)
P
T
1.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
30
A
Single Avalanche Energy
Note2
E
AS
90
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2.
Starting T
ch
= 25C, R
G
= 25
,
V
GS
= 20
0 V
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3482 TO-251
(MP-3)
2SK3482-Z TO-252
(MP-3Z)
Data Sheet
D15064EJ2V0DS
2
2SK3482
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 100 V, V
GS
= 0 V
10
A
Leakage Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 18 A
12
23
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 18 A
27
33
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 18 A
29
39
m
Input Capacitance
C
iss
V
DS
= 10 V
3600
pF
Output Capacitance
C
oss
V
GS
= 0 V
360
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
190
pF
Turn-on Delay Time
t
d(on)
V
DD
= 50 V, I
D
= 18 A
15 ns
Rise Time
t
r
V
GS
= 10 V
10
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
68 ns
Fall Time
t
f
6 ns
Total Gate Charge
Q
G
V
DD
= 80 V
72
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
10
nC
Gate to Drain Charge
Q
GD
I
D
= 36 A
19
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 36 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 36 A, V
GS
= 0 V
70
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
180
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet
D15064EJ2V0DS
3
2SK3482
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE
TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
T
- Total
Power Di
s
s
i
p
ation - W
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
10
1
0.1
100
0.1
1000
1
10
100
T
C
= 25C
Single Pulse
1000
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(pulse)
= 100 A
I
D(DC)
= 36 A
Po
wer Dissipation
Limited
DC
PW = 10
s
100
s
1 ms
10 ms
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
C/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
Channel to Ambient
Channel to Case
R
th(ch-A)
= 125C/W
R
th(ch-C)
= 2.5C/W
PW - Pulse Width - s
Data Sheet
D15064EJ2V0DS
4
2SK3482
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
0
10
20
30
40
50
60
70
80
90
0
1
2
3
4
5
Pulsed
V
GS
= 10 V
4.5 V
I
D
- Drain Current - A
0.01
0.1
1
10
100
0
1
2
3
4
5
V
DS
= 10 V
Pulsed
T
A
= 150C
75C
-25C
-40C
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL
TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN
CURRENT
V
G
S
(off)
Gate Cut-off Voltage - V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50
-25
0
25
50
75
100 125 150
V
SD
= 10 V
I
D
= 1mA
|
y
fs
|
- Forward Transfer Admittance - S
0 .0 1
0 .1
1
1 0
1 0 0
0 .0 1
0 .1
1
1 0
1 0 0
V
D S
= 1 0 V
P u ls e d
T
A
= 1 5 0 C
-4 0 C
2 5 C
7 5 C
T
ch
- Channel Temperature -
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
0 .1
1
1 0
1 0 0
1 0 V
P u ls e d
V
G S
= 4 .5 V
0
5
10
15
20
25
30
35
40
45
50
0
2
4
6
8
10 12 14 16 18 20
Pulsed
I
D
= 36 A
18 A
7.2 A
R
DS(
on)
- Drain to Source On-state Resistance - m
I
D
- Drain Current - A
R
DS(
on)
- Drain to Source On-state Resistance - m
V
GS
- Gate to Source Voltage - V
Data Sheet
D15064EJ2V0DS
5
2SK3482
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE
vs.
DRAIN TO SOURCE VOLTAGE
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100 125 150
Pulsed
V
GS
= 4.5 V
10 V
10
100
1000
10000
0.01
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
R
DS(
on)
- Drain to Source On-state Resistance - m
T
ch
- Channel Temperature -
C
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
V
DS
- Drain to Source Voltage - V
SWITCHING
CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Switching Time - ns
1
10
100
1000
0.1
1
10
100
V
DD
= 50 V
V
GS
= 10 V
R
G
= 0
t
d(off)
td(on)
t
r
t
f
V
DS
- Drain to Source Voltage - V
0
10
20
30
40
50
60
70
80
90
100
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
I
D
= 36 A
V
DS
V
GS
V
DD
= 80 V
50 V
20 V
V
GS
- Gate to Drain Volta
g
e - V
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
I
SD
-
Diode Forward Current
-
A
0.01
0.1
1
10
100
0.0
0.5
1.0
1.5
Pulsed
0 V
V
GS
= 10 V
t
rr
- Rev
e
rs
e Rec
o
v
e
ry
Ti
me - ns
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
s
V
GS
= 0 V
V
SD
- Source to Drain Voltage - V
I
F
- Drain Current - A
Data Sheet
D15064EJ2V0DS
6
2SK3482
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
I
AS
- Single Avalanche Current - A
1
10
100
1000
0.001
0.01
0.1
1
10
V
DD
= 50 V
V
G S
= 20
0 V
R
G
= 25
I
AS
= 30 A
E
AS
= 90 m J
Energy Derating Factor - %
0
20
40
60
80
100
120
25
50
75
100
125
150
V
D D
= 50 V
V
G S
= 20
0 V
R
G
= 25
I
A S
30 A
L - Inductive Load - mH
Starting T
ch
- Starting Channel Temperature -
C
Data Sheet
D15064EJ2V0DS
7
2SK3482
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2
1
3
6.5 0.2
5.0 0.2
4
1.5
-
0.1
+0.2
5.5 0.2
7.0 MIN.
13.7 MIN.
2.3
2.3
0.75
0.5 0.1
2.3 0.2
1.6 0.2
1.1 0.2
0.5
-0.1
+0.2
0.5
-0.1
+0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
4
6.5 0.2
5.0 0.2
4.3 MAX.
0.8
2.3 2.3
0.9
MAX.
5.5 0.2
10.0 MAX.
2.0 MIN.
1.5
-
0.1
+0.2
2.3 0.2
0.5 0.1
0.8
MAX.
0.8
1.0 MIN.
1.8TYP.
0.7
1.1 0.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
2SK3482
The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
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property rights of third parties by or arising from the use of NEC Electronics products listed in this document
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M8E 02. 11-1
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