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MOS FIELD EFFECT TRANSISTOR
2SK3483
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15068EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001
DESCRIPTION
The 2SK3483 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
R
DS(on)1
= 52 m
MAX. (V
GS
= 10 V, I
D
= 14 A)
R
DS(on)2
= 59 m
MAX. (V
GS
= 4.5 V, I
D
= 14 A)
Low C
iss
: C
iss
= 2300 pF TYP.
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0V)
V
DSS
100
V
Gate to Source Voltage (V
DS
= 0V)
V
GSS
20
V
Drain Current (DC)
I
D(DC)
28
A
Drain Current (Pulse)
Note1
I
D(pulse)
60 A
Total Power Dissipation (T
C
= 25C)
P
T
40
W
Total Power Dissipation (T
A
= 25C)
P
T
1.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
25
A
Single Avalanche Energy
Note2
E
AS
62.5
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, R
G
= 25
,
V
GS
= 20
0 V
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3483 TO-251
(MP-3)
2SK3483-Z TO-252
(MP-3Z)
Data Sheet
D15068EJ2V0DS
2
2SK3483
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 100 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 14 A
9.0
18
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 14 A
41
52
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 14 A
45
59
m
Input Capacitance
C
iss
V
DS
= 10 V
2300
pF
Output Capacitance
C
oss
V
GS
= 0 V
230
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
120
pF
Turn-on Delay Time
t
d(on)
V
DD
= 50 V, I
D
= 14 A
12 ns
Rise Time
t
r
V
GS
= 10 V
9
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
53 ns
Fall Time
t
f
5 ns
Total Gate Charge
Q
G
V
DD
= 80 V
49
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
7
nC
Gate to Drain Charge
Q
GD
I
D
= 28 A
13
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 28 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 28 A, V
GS
= 0 V
73
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
175
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet
D15068EJ2V0DS
3
2SK3483
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE
TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0
25
50
75 100 125 150 175
P
T
- Total
Power Di
s
s
i
p
ation - W
0
5
10
15
20
25
30
35
40
45
0
25
50
75
100 125 150 175
T
C
- Case Temperature -
C
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
10
1
0.1
100
0.1
1000
1
10
100
T
C
= 25C
Single Pulse
1000
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(pulse)
= 60 A
I
D(DC)
= 28 A
Po
w
er Dissipation
Limited
DC
PW = 10
s
100
s
1 ms
10 ms
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
C/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
Channel to Ambient
Channel to Case
R
th(ch-A)
= 125C/W
R
th(ch-C)
= 3.13C/W
PW - Pulse Width - s
Data Sheet
D15068EJ2V0DS
4
2SK3483
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
0
10
20
30
40
50
60
0.0
1.0
2.0
3.0
4.0
5.0
Pulsed
V
GS
= 10 V
4.5 V
I
D
- Drain Current - A
0.001
0.01
0.1
1
10
100
0
1
2
3
4
5
V
DS
= 10 V
P ulsed
T
A
= 150
C
75C
25C
-40C
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL
TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN
CURRENT
V
G
S
(off)
Gate Cut-off Voltage - V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50 -25
0
25
50
75 100 125 150 175
V
SD
= 10 V
I
D
= 1 mA
|
y
fs
|
- Forward Transfer Admittance - S
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
= 10 V
P ulsed
T
A
= -40
C
25
C
75
C
150
C
T
ch
- Channel Temperature -
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
10
20
30
40
50
60
70
80
90
100
0.1
1
10
100
10 V
Pulsed
V
GS
= 4.5 V
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10 12 14 16 18 20
Pulsed
I
D
= 28 A
14A
5.6 A
R
DS(
on)
- Drain to Source On-state Resistance - m
I
D
- Drain Current - A
R
DS(
on)
- Drain to Source On-state Resistance - m
V
GS
- Gate to Source Voltage - V
Data Sheet
D15068EJ2V0DS
5
2SK3483
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE
vs.
DRAIN TO SOURCE VOLTAGE
0
20
40
60
80
100
120
-50 -25
0
25
50
75 100 125 150 175
Pulsed
10 V
V
GS
= 4.5 V
10
100
1000
10000
0.01
0.1
1
10
100
V
GS
= 0 V
f = 1MHz
C
iss
C
oss
C
rss
R
DS(
on)
- Drain to Source On-state Resistance - m
T
ch
- Channel Temperature -
C
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
V
DS
- Drain to Source Voltage - V
SWITCHING
CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Switching Time - ns
1
10
100
1000
0.1
1
10
100
V
DD
= 50 V
V
GS
= 10 V
R
G
= 0
t
d(off)
t
d(on)
t
f
t
r
V
DS
- Drain to Source Voltage - V
0
10
20
30
40
50
60
70
80
90
100
0
5 10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
I
D
= 28 A
V
DS
V
GS
V
DD
= 80 V
50 V
20 V
V
GS
- Gate to Drain Voltage - V
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
I
SD
-
Diode Forward Current
-
A
0.01
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
P ulsed
0 V
V
G S
= 10 V
t
rr
- Rev
e
rs
e Rec
o
v
e
ry
Ti
me - ns
1
10
100
1000
0.1
1
10
100
di/dt = 100 A /
s
V
G S
= 0 V
V
SD
- Source to Drain Voltage - V
I
F
- Drain Current - A
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