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confirm that this is the latest version.
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MOS FIELD EFFECT TRANSISTOR
2SK3507
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15387EJ1V0DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
2001
DESCRIPTION
The 2SK3507 is N-channel MOS FET device that features
a low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as DC/DC
converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance
R
DS(on)1
= 45 m
MAX. (V
GS
= 10
V, I
D
= 11
A)
Low gate charge
Q
G
= 8.5 nC TYP. (V
DD
= 24 V, V
GS
= 10 V, I
D
= 22 A)
Built-in G-S protection diode
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
16 V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
22 A
Drain Current (pulse)
Note1
I
D(pulse)
45 A
Total Power Dissipation (T
C
= 25C)
P
T1
20
W
Total Power Dissipation
Note2
P
T2
1.5
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-55 to +150
C
Single Avalanche Current
Note3
I
AS
10
A
Single Avalanche Energy
Note3
E
AS
10
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Mounted on glass epoxy board of 1 inch x 1 inch x 1.6 mm
3. Starting T
ch
= 25C, V
DD
= 15 V, R
G
= 25
, V
GS
= 20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3507-ZK TO-252
(MP-3ZK)
Data Sheet D15387EJ1V0DS
2
2SK3507
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
16 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 4.0 V, I
D
= 11 A
6
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 11 A
28
45
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 11 A
46
76
m
Input Capacitance
C
iss
V
DS
= 10 V
360
pF
Output Capacitance
C
oss
V
GS
= 0 V
125
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
65
pF
Turn-on Delay Time
t
d(on)
V
DD
= 15 V, I
D
= 11 A
6.6
ns
Rise Time
t
r
V
GS
= 10 V
3.6
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
16 ns
Fall Time
t
f
5.3 ns
Total Gate Charge
Q
G
V
DD
= 24 V
8.5
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
2
nC
Gate to Drain Charge
Q
GD
I
D
= 22 A
2.1
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 22 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 22 A, V
GS
= 0 V
31
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
26 nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D15387EJ1V0DS
3
2SK3507
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Pe
rcentage
of Rated Powe
r -
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
P
T
- Total Powe
r
Dissipation - W
0
10
20
30
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Dr
ain Cur
r
ent
- A
0.1
1
10
100
0.1
1
10
100
I
D(pulse)
T
C
= 25C
Single pulse
10 ms
Power Dissipation Limited
I
D(DC)
PW = 10
s
1 ms
DC
100
s
R
DS(on)
Limited
(at V
GS
= 10 V)
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
-
Transient T
hermal Resistance -
C/W
0.01
0.1
1
10
100
1000
Single pulse
R
th(ch-C)
= 6.25C/W
R
th(ch-A)
= 83.3C/W
PW - Pulse Width - s
10
100
1 m
10 m
100 m
1
10
100
1000
Data Sheet D15387EJ1V0DS
4
2SK3507
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Dr
ain Cur
r
ent
- A
0
10
20
30
40
50
60
0
1
2
3
4
5
6
V
GS
= 10 V
7 V
4.5 V
Pulsed
V
DS
- Drain to Source Voltage - V
I
D
- Dr
ain Cur
r
ent
- A
0.01
0.1
1
10
100
0
1
2
3
4
5
T
A
=
-55C
25C
75C
150C
V
DS
= 10 V
Pulsed
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
-
Gate C
u
t
-
off Voltage - V
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
C
|
y
fs
| - Forward
T
r
ansfer Admittan
c
e - S
0.1
1
10
100
0.01
0.1
1
10
100
T
A
=
-55C
25C
75C
150C
V
DS
= 4.0 V
Pulsed
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
0
20
40
60
80
100
120
140
0.1
1
10
100
V
GS
= 4.5 V
7 V
10 V
Pulsed
I
D
- Drain Current - A
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
0
20
40
60
80
100
120
0
5
10
15
20
I
D
= 11 A
Pulsed
V
GS
- Gate to Source Voltage - V
Data Sheet D15387EJ1V0DS
5
2SK3507
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
0
20
40
60
80
-50
0
50
100
150
I
D
= 11 A
Pulsed
V
GS
= 4.5 V
7 V
10 V
T
ch
- Channel Temperature - C
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
10
100
1000
10000
0.01
0.1
1
10
100
C
iss
C
oss
C
rss
V
GS
= 0 V
f = 1 MHz
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Swi
t
ching Time - ns
1
10
100
1000
0.1
1
10
100
t
d(on)
t
d(off)
t
r
t
f
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
I
D
- Drain Current - A
V
DS
- D
r
ain to So
urce Voltage - V
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
0
2
4
6
8
10
12
I
D
= 22 A
V
DS
= 24 V
15 V
6 V
V
DS
V
GS
Q
G
- Gate Charge - nC
V
GS
-
Gate to So
urce Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
- Diode Fo
rwa
r
d
Curren
t
- A
0.01
0.1
1
10
100
0
0.5
1
1.5
V
GS
= 10 V
0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Rev
e
rs
e Rec
o
v
e
ry
Ti
me - ns
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
s
V
GS
= 0 V
I
F
- Diode Forward Current - A
Data Sheet D15387EJ1V0DS
6
2SK3507
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
I
AS
- Single Avalanche Current
- A
0.1
1
10
100
0.01
0.1
1
10
E
AS
= 10 mJ
I
AS
= 10 A
V
DD
= 15 V
R
G
= 25
V
GS
= 20
0 V
Starting T
ch
= 25C
L - Inductive Load - mH
Energy Derating
Factor -
%
0
20
40
60
80
100
120
25
50
75
100
125
150
V
DD
= 15 V
R
G
= 25
V
GS
= 20
0 V
I
AS
10 A
Starting T
ch
- Starting Channel Temperature - C
Data Sheet D15387EJ1V0DS
7
2SK3507
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
6.5
0.2
2.3
0.1
0.5
0.1
0.77
0.1
0.03 to 0.25
0.5
0.1
1.0
No Plating
No Plating
5.1
0.3
1.0
0.3
6.1
0.2
0.51 MIN.
4.0 MIN
.
0.8
10.3 MAX. (9.7 TYP.)
4.3 MIN.
1
4
2
3
1.14 MAX.
2.3
2.3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
2SK3507
The information in this document is current as of December, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics
does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
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M8E 02. 11-1
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