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MOS FIELD EFFECT TRANSISTOR
2SK3572
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16258EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
2002
The mark
5
5
5
5
shows major revised points.
DESCRIPTION
The 2SK3572 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance
R
DS(on)1
= 5.7 m
MAX. (V
GS
= 10
V, I
D
= 40
A)
Low gate charge
Q
G
= 32 nC TYP. (V
DD
= 16
V, V
GS
= 10
V, I
D
= 80
A)
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
80
A
Drain Current (pulse)
Note
I
D(pulse)
300
A
Total Power Dissipation (T
A
= 25C)
P
T1
1.5
W
Total Power Dissipation (T
C
= 25C)
P
T2
52
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Note PW
10
s, Duty Cycle
1%
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3572
TO-220AB
2SK3572-S
TO-262
2SK3572-ZK
TO-263
2SK3572-Z
TO-220SMD
Note
Note TO-220SMD package is produced only in Japan.
5
5
5
5
Data Sheet D16258EJ2V0DS
2
2SK3572
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 40 A
15
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 40 A
4.4
5.7
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 40 A
7.4
9.9
m
Input Capacitance
C
iss
V
DS
= 10 V
1700
pF
Output Capacitance
C
oss
V
GS
= 0 V
700
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
250
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10 V, I
D
= 40 A
16
ns
Rise Time
t
r
V
GS
= 10 V
14
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
50
ns
Fall Time
t
f
12
ns
Total Gate Charge
Q
G
V
DD
= 16 V
32
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
7.1
nC
Gate to Drain Charge
Q
GD
I
D
= 80 A
7.7
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 80 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 80 A, V
GS
= 0 V
42
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
34
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D16258EJ2V0DS
3
2SK3572
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - P
e
r
c
ent
age o
f
Ra
t
ed P
o
w
e
r - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
P
T
- Tot
a
l
P
o
w
e
r Di
s
s
i
pat
i
on -
W
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
-
A
0.1
1
10
100
1000
0.1
1
10
100
I
D(pulse)
PW = 10
s
1 ms
10 ms
Power Dissipation Limited
R
DS(on)
Limited
T
C
= 25C
Single pulse
100
s
I
D(DC)
DC
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
t
)
-
Trans
i
e
n
t
Ther
m
a
l
Resi
st
anc
e
-
C/W
0.01
0.1
1
10
100
Single pulse
PW - Pulse Width - s
10
100
1 m
10 m
100 m
1
10
100
1000
R
th(ch-A)
= 83.3C/W
R
th(ch-C)
= 2.4C/W
Data Sheet D16258EJ2V0DS
4
2SK3572
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current
-
A
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
V
G S
= 10 V
4.5 V
Pulsed
V
DS
- Drain to Source Voltage - V
I
D
- Drai
n Current
-
A
0.01
0.1
1
10
100
1000
0
1
2
3
4
5
6
7
V
DS
= 10 V
Pulsed
T
ch
= 150C
75C
25C
-
55C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(
o
ff)
- Ga
t
e
Cut
-
of
f
V
o
l
t
age
- V
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
C
| y
fs
| -
Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e -
S
0.1
1
10
100
0.1
1
10
100
T
ch
=
-
55C
25C
75C
150C
V
DS
= 10 V
Pulsed
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e - m
0
5
10
15
20
25
1
10
100
1000
10 V
V
GS
= 4.5 V
Pulsed
I
D
- Drain Current - A
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e - m
0
5
10
15
20
0
5
10
15
20
Pulsed
I
D
= 40 A
V
GS
- Gate to Source Voltage - V
Data Sheet D16258EJ2V0DS
5
2SK3572
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e - m
0
2
4
6
8
10
12
14
-50
0
50
100
150
V
GS
= 4.5 V
10 V
I
D
= 40 A
Pulsed
T
ch
- Channel Temperature - C
C
is
s
, C
os
s
, C
rs
s
- C
a
p
a
c
i
t
anc
e -
pF
10
100
1000
10000
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
o
n
)
, t
r
, t
d
(
o
ff)
, t
f
-
S
w
itc
h
in
g
Tim
e
-
n
s
1
10
100
1000
0.1
1
10
100
t
d(off)
t
d(on)
t
f
t
r
V
DD
= 10 V
V
GS
= 10 V
R
G
= 10
I
D
- Drain Current - A
V
DS
- Drai
n
t
o
S
ourc
e
V
o
l
t
age -
V
0
4
8
12
16
20
0
10
20
30
40
0
2
4
6
8
10
I
D
= 83 A
V
DD
= 16 V
10 V
V
GS
V
DS
Q
G
- Gate Charge - nC
V
GS
- Ga
t
e
t
o
S
our
c
e
V
o
l
t
age -
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
-
D
i
o
de Fo
r
w
a
r
d C
u
r
r
ent
-
A
0.01
0.1
1
10
100
1000
0
0.5
1
1.5
V
GS
= 10 V
0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Rev
e
r
s
e
Re
cov
e
ry
T
i
m
e
-
n
s
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
s
V
GS
= 0 V
I
D
- Drain Current - A
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