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confirm that this is the latest version.
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MOS FIELD EFFECT TRANSISTOR
2SK3634
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15936EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2001
The mark
shows major revised points.
DESCRIPTION
The 2SK3634 is N-channel MOS FET device that features
a low on-state resistance and excellent switching
characteristics, and designed for high voltage applications
such as DC/DC converter.
FEATURES
High voltage: V
DSS
= 200 V
Gate voltage rating: 30 V
R
DS(on)
= 0.60
MAX. (V
GS
= 10 V, I
D
= 3.0 A)
Low C
iss
: C
iss
= 270 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Built-in gate protection diode
TO-251/TO-252 package
Avalanche capability rated
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
200 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
30 V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
6.0 A
Drain Current (Pulse)
Note1
I
D(pulse)
18 A
Total Power Dissipation (T
C
= 25C)
P
T1
20 W
Total Power Dissipation (T
A
= 25C)
P
T2
1.0 W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
6.0 A
Single Avalanche Energy
Note2
E
AS
3.6
mJ
Repetitive Avalanche Current
Note3
I
AR
6.0 A
Repetitive Pulse Avalanche Energy
Note3
E
AR
2.0
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD =
100 V, R
G
= 25
,
V
GS
= 20
0 V, L = 100
H
3. T
ch
125C , R
G
= 25
, V
DD
= 100 V
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3634 TO-251
(MP-3)
2SK3634-Z TO-252
(MP-3Z)
Data Sheet D15936EJ2V0DS
2
2SK3634
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 200 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
= 30 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.5
4.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 3.0 A
2
4
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 3.0 A
0.47
0.60
Input Capacitance
C
iss
V
DS
= 10 V
270
pF
Output Capacitance
C
oss
V
GS
= 0 V
75
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
33
pF
Turn-on Delay Time
t
d(on)
V
DD
= 100 V, I
D
= 3.0 A
4 ns
Rise Time
t
r
V
GS
= 10 V
8
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
14 ns
Fall Time
t
f
6 ns
Total Gate Charge
Q
G
V
DD
= 160 V
9
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
1.5
nC
Gate to Drain Charge
Q
GD
I
D
= 6.0 A
4.5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 16 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 6 A, V
GS
= 0 V
100
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
320
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet D15936EJ2V0DS
3
2SK3634
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE
TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
0
25
50
75
100
125
150
175
P
T
- Total Power Dissipation - W
0
5
10
15
20
25
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
0.01
0.1
1
10
100
0.1
1
10
100
1000
I
D(DC)
= 6 A
R
DS(on)
Lim ited
(V
G S
= 10 V)
PW = 100
s
1 m s
10 m s
Power Dissipation
Lim ited
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
C/W
0.1
1
10
100
1000
R
th( j-A)
= 125
C/W
R
th( j-C)
= 6.25
C/W
PW - Pulse Width - s
100
1 m
10 m
100 m
1
10
100
1000
Data Sheet D15936EJ2V0DS
4
2SK3634
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current - A
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Pulsed
V
GS
= 10 V
I
D
- Drai
n Current - A
0.0001
0.001
0.01
0.1
1
10
100
0
5
10
15
P ulsed
V
D S
= 10 V
T
ch
= 125
C
75
C
25
C
-25C
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL
TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN
CURRENT
V
G
S
(off)
- Gate Cut-off Voltage - V
2
2.5
3
3.5
4
4.5
5
-50
-25
0
25
50
75
100
125
150
V
SD
= 10 V
I
D
= 1 mA
|
y
fs
|
- Forward Transfer Admittance - S
0.01
0.1
1
10
100
0.01
0.1
1
10
100
T
A
=
-25C
25C
75C
125C
Pulsed
V
DS
= 10 V
T
ch
- Channel Temperature -
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
0.5
1
1.5
2
0.01
0.1
1
10
100
Pulsed
V
GS
= 10 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
2
4
6
8
10
12
14
16
18
20
Pulsed
I
D
= 6.0 A
3.0 A
1.5 A
R
DS(
on)
- Drain to Source On-state Resistance -
I
D
- Drain Current - A
R
DS(
on)
- Drain to Source On-state Resistance -
V
GS
- Gate to Source Voltage - V
Data Sheet D15936EJ2V0DS
5
2SK3634
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE
vs.
DRAIN TO SOURCE VOLTAGE
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
I
D
= 6 A
3 A
Pulsed
V
GS
= 10 V
1
10
100
1000
0.1
1
10
100
1000
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
R
DS(
on)
- Drain to Source On-state Resistance -
T
ch
- Channel Temperature -
C
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
V
DS
- Drain to Source Voltage - V
SWITCHING
CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Switching Time - ns
1
10
100
0.1
1
10
100
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 100 V
V
G S
= 10 V
R
G
= 0
V
DS
- Drain to Source Voltage - V
0
20
40
60
80
100
120
140
160
180
200
220
240
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
I
D
= 6.0 A
V
DS
V
DD
= 160 V
100 V
40 V
V
GS
V
GS
- Gate to Drain Volta
g
e - V
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
Diode Forward Current
-
A
0.01
0.1
1
10
100
0
0.5
1
1.5
Pulsed
V
GS
= 0 V
t
rr
- Rev
e
rs
e Rec
o
v
e
ry
Ti
me - ns
1
10
100
1000
0.1
1
10
100
V
G S
= 0 V
di/dt = 100 A/
s
V
F(S-D)
- Source to Drain Voltage - V
I
F
Diode Forward Current - A
Data Sheet D15936EJ2V0DS
6
2SK3634
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
I
AS
- Single Avalanche Current - A
0.1
1
10
100
0.01
0.1
1
10
V
DD
= 100 V
R
G
= 25
V
GS
= 20
0 V
Starting T
ch
= 25
C
I
AS
= 6.0 A
E
AS
= 3.6 mJ
Energy Derating Factor - %
0
20
40
60
80
100
25
50
75
100
125
150
V
DD
= 100 V
R
G
= 25
V
GS
= 20
0 V
I
AS
6.0 A
L - Inductive Load - mH
Starting T
ch
- Starting Channel Temperature -
C
Data Sheet D15936EJ2V0DS
7
2SK3634
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2
1
3
6.5 0.2
5.0 0.2
4
1.5
-
0.1
+0.2
5.5 0.2
7.0 MIN.
13.7 MIN.
2.3
2.3
0.75
0.5 0.1
2.3 0.2
1.6 0.2
1.1 0.2
0.5
-0.1
+0.2
0.5
-0.1
+0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
4
6.5 0.2
5.0 0.2
4.3 MAX.
0.8
2.3 2.3
0.9
MAX.
5.5 0.2
10.0 MAX.
2.0 MIN.
1.5
-
0.1
+0.2
2.3 0.2
0.5 0.1
0.8
MAX.
0.8
1.0 MIN.
1.8TYP.
0.7
1.1 0.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
2SK3634
The information in this document is current as of August, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
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M8E 02. 11-1
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