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2002
MOS FIELD EFFECT TRANSISTOR
2SK3712
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16372EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
DESCRIPTION
The 2SK3712 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for high voltage applications such as DC/DC converter.
FEATURES
High voltage: V
DSS
= 250 V
Gate voltage rating: 30 V
Low on-state resistance
R
DS(on)
= 0.58
MAX. (V
GS
= 10 V, I
D
= 4.5 A)
Low C
iss
: C
iss
= 450 pF TYP. (V
DS
= 10 V, I
D
= 0 A)
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
250 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
30 V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
9.0 A
Drain Current (pulse)
Note1
I
D(pulse)
27 A
Total Power Dissipation (T
C
= 25C)
P
T1
40 W
Total Power Dissipation (T
A
= 25C)
P
T2
1.0 W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note2
I
AS
9 A
Single Avalanche Energy
Note2
E
AS
8.1
mJ
Repetitive Avalanche Current
Note3
I
AR
9 A
Repetitive Pulse Avalanche Energy
Note3
E
AR
8.1
mJ
Notes 1. PW
10
s, Duty cycle
1%
2. Starting T
ch
= 25C, V
DD
= 125 V, R
G
= 25
, V
GS
= 20
0 V, L = 100
H
3. T
ch(peak)
150C, L = 100
H
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3712
TO-251 (MP-3)
2SK3712-Z
TO-252 (MP-3Z)
(TO-251)
(TO-252)
Data Sheet D16372EJ2V0DS
2
2SK3712
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 250 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
= 30 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.5
4.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 4.5 A
3
6
S
Drain to Source On-state Resistance
Note
R
DS(on)
V
GS
= 10 V, I
D
= 4.5 A
0.45
0.58
Input Capacitance
C
iss
V
DS
= 10 V
450
pF
Output Capacitance
C
oss
V
GS
= 0 V
100
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
40
pF
Turn-on Delay Time
t
d(on)
V
DD
= 125 V, I
D
= 4.5 A
8 ns
Rise Time
t
r
V
GS
= 10 V
8
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
21 ns
Fall Time
t
f
6 ns
Total Gate Charge
Q
G
V
DD
= 200 V
14
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
3
nC
Gate to Drain Charge
Q
GD
I
D
= 9.0 A
7
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 9 A, V
GS
= 0 V
0.9
1.5
V
Reverse Recovery Time
t
rr
I
F
= 9 A, V
GS
= 0 V
150
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
630 nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D16372EJ2V0DS
3
2SK3712
TYPICAL CHARACTERISTICS (T
A
= 25
C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
P
T
- Total
Power Di
s
s
i
pati
o
n - W
0
10
20
30
40
50
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
0.01
0.1
1
10
100
0.1
1
10
100
1000
PW = 100
s
1 ms
10 ms
I
D(pulse)
= 27 A
I
D(DC)
= 9.0 A
Power dissipation limited
R
DS(on)
Limited
(at V
GS
= 10 V)
T
C
= 25
C
Single pulse
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
C/W
0.01
0.1
1
10
100
1000
Single pulse
R
th(ch-A)
: T
A
= 25
C
R
th(ch-C)
: T
C
= 25
C
R
th(ch-C)
= 3.125
C/W
R
th(ch-A)
= 125
C/W
PW - Pulse Width - s
100
1 m
10 m
100m
1
10
100
1000
Data Sheet D16372EJ2V0DS
4
2SK3712
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
0
5
10
15
20
25
30
0
5
10
15
20
25
30
V
GS
= 10 V
Pulsed
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0.0001
0.001
0.01
0.1
1
10
100
0
5
10
15
V
DS
= 10 V
Pulsed
T
A
=
-25C
25
C
75
C
125
C
150
C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
- Gate Cut-off Voltage - V
2
2.5
3
3.5
4
4.5
-50
-25
0
25
50
75
100
125
150
175
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
C
|
y
fs
| - Forward Transfer Admittance - S
0
0
1
10
100
0.01
0.1
1
10
100
V
DS
= 10 V
Pulsed
T
A
=
- 25C
25
C
75
C
125
C
150
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
- Drain to Source On-state Resistance -
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.1
1
10
100
V
GS
= 10 V
Pulsed
I
D
- Drain Current - A
R
DS(
on)
- Drain to Source On-state Resistance -
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
0
2
4
6
8
10
12
14
16
18
20
Pulsed
I
D
= 9.0 A
4.5 A
1.8 A
V
GS
- Gate to Source Voltage - V
Data Sheet D16372EJ2V0DS
5
2SK3712
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
- Drain to Source On-state Resistance -
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
-50
-25
0
25
50
75
100
125
150
175
I
D
= 9.0 A
V
GS
= 10 V
Pulsed
4.5 A
T
ch
- Channel Temperature - C
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
1
10
100
1000
0.1
1
10
100
1000
V
GS
= 0 V
f = 1 MHz
C
rss
C
oss
C
iss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Switching Time - ns
1
10
100
0.1
1
10
100
t
f
t
d(off)
t
d(on)
t
r
V
DD
= 125 V
V
GS
= 10 V
R
G
= 0
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
0
50
100
150
200
250
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0
3
6
9
12
15
I
D
= 9.0 A
V
GS
V
DD
= 200 V
125 V
62.5 V
V
DS
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
- Diode Forward Current - A
0.01
0.1
1
10
100
0
0.25
0.5
0.75
1
1.25
1.5
V
GS
= 0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Rev
e
rs
e Rec
o
v
e
ry
Ti
me - ns
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
s
V
GS
= 0 V
I
F
- Diode Forward Current - A