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MOS FIELD EFFECT TRANSISTOR
2SK3715
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16378EJ2V0DS00 (2nd edition)
Date Published August 2003 NS CP(K)
Printed in Japan
2002
The mark
shows major revised points.
DESCRIPTION
The 2SK3715 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
R
DS(on)1
= 6.0 m
MAX. (V
GS
= 10
V, I
D
= 38
A)
R
DS(on)2
= 9.5 m
MAX. (V
GS
= 4
V, I
D
= 38 A)
Low C
iss
: C
iss
= 8400 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20 V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
75 A
Drain Current (pulse)
Note1
I
D(pulse)
300 A
Total Power Dissipation (T
C
= 25C)
P
T1
40 W
Total Power Dissipation (T
A
= 25C)
P
T2
2.0 W
Channel Temperature
T
ch
150 C
Storage Temperature
T
stg
-
55 to +150
C
Single Avalanche Current
Note2
I
AS
67 A
Single Avalanche Energy
Note2
E
AS
450 mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Starting T
ch
= 25C, V
DD
= 30 V, R
G
= 25
, V
GS
= 20
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3715
Isolated TO-220
(Isolated TO-220)
Data Sheet D16378EJ2V0DS
2
2SK3715
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 38 A
33
65
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 38 A
4.8
6.0
m
R
DS(on)2
V
GS
= 4 V, I
D
= 38 A
6.1
9.5
m
Input Capacitance
C
iss
V
DS
= 10 V
8400
pF
Output Capacitance
C
oss
V
GS
= 0 V
1200
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
530
pF
Turn-on Delay Time
t
d(on)
V
DD
= 30 V, I
D
= 38 A
24
ns
Rise Time
t
r
V
GS
= 10 V
15
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
116 ns
Fall Time
t
f
11 ns
Total Gate Charge
Q
G
V
DD
= 48 V
145
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
21
nC
Gate to Drain Charge
Q
GD
I
D
= 75 A
39
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 75 A, V
GS
= 0 V
0.92
1.5
V
Reverse Recovery Time
t
rr
I
F
= 50 A, V
GS
= 0 V
59
ns
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
s
136 nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D16378EJ2V0DS
3
2SK3715
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE
TEMPERATURE
dT - Pe
rcentage
of Rated Powe
r -
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
P
T
- Total Powe
r
Dissipation - W
0
10
20
30
40
50
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Dr
ain Cur
r
ent
- A
0.01
0.1
1
10
100
1000
0.1
1
10
100
I
D(pulse)
I
D(DC)
PW = 100
s
1 ms
10 ms
DC
Single pulse
T
C
= 25C
R
DS(on)
Limited
(at V
GS
= 10 V)
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
-
Transient T
hermal Resistance -
C/W
0.01
0.1
1
10
100
Single pulse
R
th(ch-A)
= 62.5C/W
R
th(ch-C)
= 3.13C/W
PW - Pulse Width - s
100
1 m
10 m
100 m
1
10
100
1000
Data Sheet D16378EJ2V0DS
4
2SK3715
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Dr
ain Cur
r
ent
- A
0
50
100
150
200
250
300
350
0
0.5
1
1.5
2
2.5
V
GS
= 10 V
Pulsed
4.0 V
V
DS
- Drain to Source Voltage - V
I
D
- Dr
ain Cur
r
ent
- A
0.001
0.01
0.1
1
10
100
1000
0
1
2
3
4
5
V
DS
= 10 V
Pulsed
T
ch
= 150C
85C
25C
-
55C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL
TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN
CURRENT
V
G
S
(off)
-
Gate C
u
t
-
off Voltage - V
0
0.5
1
1.5
2
2.5
3
-75 -50 -25
0
25 50 75 100 125 150 175
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
C
|
y
fs
| - Forward
T
r
ansfer Admittan
c
e - S
1
10
100
0.1
1
10
100
T
ch
=
-
50C
25C
85C
150C
V
DS
= 10 V
Pulsed
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
0
2
4
6
8
10
12
14
16
18
20
1
10
100
1000
V
GS
= 4.0 V
Pulsed
10 V
I
D
- Drain Current - A
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
0
2
4
6
8
10
0
10
20
Pulsed
I
D
= 38 A
V
GS
- Gate to Source Voltage - V
Data Sheet D16378EJ2V0DS
5
2SK3715
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
- Drain to S
ource On
-state Re
sistance - m
0
2
4
6
8
10
12
-50
-25
0
25
50
75
100 125 150
V
GS
= 4 V
10 V
I
D
= 38 A
Pulsed
T
ch
- Channel Temperature - C
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
100
1000
10000
0.1
1
10
100
V
G S
= 0 V
f = 1 M H z
C
oss
C
iss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Swi
t
ching Time - ns
1
10
100
1000
0.1
1
10
100
V
DD
= 30 V
V
GS
= 10 V
R
G
= 0
t
d(off)
t
d(on)
t
r
t
f
I
D
- Drain Current - A
V
DS
- D
r
ain to So
urce Voltage - V
0
5
10
15
20
25
30
35
40
45
50
0
20
40
60
80
100 120 140 160
0
1
2
3
4
5
6
7
8
9
10
I
D
= 75 A
V
D S
V
G S
V
D D
= 48 V
30 V
12 V
Q
G
- Gate Charge - nC
V
GS
-
Gate to So
urce Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
- Diode Fo
rwa
r
d
Curren
t
- A
0.01
0.1
1
10
100
1000
0
0.5
1
1.5
0 V
V
GS
= 10 V
Pulsed
4 V
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Rev
e
rs
e Rec
o
v
e
ry
Ti
me - ns
10
100
1000
0.1
1
10
100
di/dt = 50 A/
s
V
GS
= 0 V
I
F
- Diode Forward Current - A
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