DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK131
RF AMP. FOR VHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4PIN MINI MOLD
DATA SHEET
Document No. P12449EJ2V0DS00 (2nd edition)
(Previous No. TC-1508)
Date Published March 1997 N
Printed in Japan
1983
FEATURES
Suitable for use as RF amplifier in VHF TV tuner.
Low C
rss
: 0.05 pF TYP.
High G
ps
: 23 dB TYP.
Low NF : 1.3 dB TYP.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Drain to Source Voltage
V
DSX
20
V
Gate1 to Source Voltage
V
G1S
8
V
Gate2 to Source Voltage
V
G2S
8
V
Drain Current
I
D
25
mA
Total Power Dissipation
P
T
200
mW
Channel Temperature
T
ch
125
C
Storage Temperature
T
stg
55 to +125
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source Breakdown Voltage
BV
DSX
20
V
V
G1S
= V
G2S
=
2 V, I
D
= 10
A
Drain Current
I
DSS
7
10
25
mA
V
DS
= 6 V, V
G2S
= 3 V, V
G1S
= 0
Gate1 to Source Cutoff Voltage
V
G1S(OFF)
2.0
V
V
DS
= 8 V, V
G2S
= 0, I
D
= 5
A
Gate2 to Source Cutoff Voltage
V
G2S(OFF)
1.5
V
V
DS
= 8 V V
G1S
= 0, I
D
= 5
A
Gate1 Reverse Current
I
G1SS
20
nA
V
DS
= 0, V
G1S
=
8 V, V
G2S
= 0
Gate2 Reverse Current
I
G2SS
20
nA
V
DS
= 0, V
G2S
=
8 V, V
G1S
= 0
Forward Transfer Admittance
y
fs
22
28
mS
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 1 kHz
Input Capacitance
C
iss
4.0
5.0
6.5
pF
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
Output Capacitance
C
oss
2.2
2.9
3.7
pF
f = 1 MHz
Reverse Transfer Capacitance
C
rss
0.05
0.08
pF
Power Gain
C
ps
21
24
dB
V
DS
= 10 V, V
G2S
= 5 V, I
D
= 10 mA
Noise Figure
NF
1.2
2.5
dB
f = 200 MHz
I
DSS
classification V11 7-13 mA V12 11-19 mA V13 17-25 mA
PACKAGE DIMENSIONS
(Unit: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Source
Drain
Gate 2
Gate 1
5
5
5
5
0 to 0.1
0.8
2.90.2
(1.8)
(1.9)
0.95
0.85
1.1
+0.2
-
3.1
0.16
+0.1
-
0.06
0.4
4
1
3
2
+0.1
-
0.05
2.8
+0.2
-
0.3
1.5
+0.2
-
0.1
0.6
+0.1
-
0.05
0.4
+0.1
-
0.05
0.4
+0.1
-
0.05
2
3SK131
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
a
-Ambient Temperature-
C
50
75
100
125
25
0
100
400
300
200
P
T
-Total Power Dissipation-mW
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
-Drain to Source Voltage-V
10
0
10
20
I
D
-Drain Current-mA
V
G2
= 3.0 V
V
G1S
= 0 V
-
0.1
-
0.2
-
0.3
-
0.4
-
0.5
1 V
V
G2S
= 0
5 V
2 V
3 V
4 V
-
0.6
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
V
G1S
-Gate 1 to Source Voltage-V
0
-
1.0
+1.0
10
20
I
D
-Drain Current-mA
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
V
G1S
-Gate 1 to Source Voltage-V
0
1.0
-
1.0
0
10
20
30
40
|y
fs
|-Forward Transfer Admitance-ms
V
DS
= 6 V
V
G2S
= 5 V
4 V
3 V
2 V
1 V
0 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
-Drain Current-mA
10
20
0
15
10
5
30
25
20
|y
fs
|-Forward Transfer Admitance-ms
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
V
G2S
-Gate 2 to Source Voltage-V
0
1.0
2.0
3.0
4.0
-
1.0
0
6.0
4.0
2.0
8.0
C
iss
-Input Capacitance-pF
V
DS
= 6.0 V
f = 1 MHz
V
DS
= 6 V
V
G2
= 3 V
f = 1.0 kHz
V
G1S
= 0.05 V
20
3
3SK131
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
V
G2S
-Gate 2 to Source Voltage-V
1.0
2.0
3.0
4.0
0
-
1.0
0
1.0
4.0
5.0
3.0
2.0
C
oss
-Output Capacitance-pF
INPUT ADMITTANCE (y
is
)
vs. FREQUENCY
g
is
-Input Conductance-mS
1
2
0
5
10
b
is
-Input Susceptance-mS
V
DS2
= 6 V
V
G2S
= 3 V
I
D
= 10 mA
V
DS
= 6.0 V
f = 1.0 MHz
-
0.5 V
200 MHz
300 MHz
100 MHz
V
G1S
= 0 V
REVERSE TRANSFER ADMITTANCE (y
rs
)
vs. FREQUENCY
g
rs
-Reverse Transfer Conductance-mS
0.1
0.2
0
-
0.1
-
0.2
b
rs
-Reverse Transfer Susceptance-mS
V
DS
= 6 V
V
G2S
= 3 V
I
D
= 10 mA
200 MHz
300 MHz
100 MHz
FORWARD TRANSFER ADMITTANCE (y
fs
)
vs. FREQUENCY
g
fs
-Forward Transfer Conductance-mS
20
30
10
-
5
-
10
-
15
b
fs
-Forward Trancfer Susceptance-mS
V
DS
= 6 V
V
G2S
= 3 V
I
D
= 10 mA
200 MHz
300 MHz
100 MHz
0.5
1.0
0
1
5
4
3
2
b
os
-Output Susceptance-mS
V
DS
= 6 V
V
G2S
= 3 V
I
D
= 10 mA
200 MHz
300 MHz
100 MHz
OUTPUT ADMITTANCVE (y
os
)
vs. FREQUENCY
g
os
-Output Conductance-mS
POWER GAIN vs. DRAIN CURRENT
I
D
-Drain Current=mA
2
4
6
8
10
0
5
10
15
20
25
G
ps
-Power Gain-dB
V
DS
= 10 V
V
G2S
= 5 V
V
DS
= 5 V
V
G2S
= 3 V
f = 200 MHz
4
3SK131
NOISE FIGURE vs. DRAIN CURRENT
I
D
-Drain Current=mA
2
4
6
8
10
0
1.0
2.0
3.0
4.0
NF-Noise Figure-dB
0
1
2
3
4
NF-Noise Figure-dB
V
DS
= 10 V
V
G2S
= 5 V
V
DS
= 5 V
V
G2S
= 3 V
f = 200 MHz
NOISE FIGURE, POWER GAIN vs.
GATE2 TO SOURCE VOLTAGE
V
G2S
-Gate 2 to Source Voltage-V
0
-
1
1
2
3
4
5
6
7
8
-
10
0
10
20
30
G
ps
-Power Gain-dB
V
DS
= 10 V
V
DS
= 5 V
f = 200 MHz
G
ps
NF
TEST CIRCUIT
V
G2S
INPUT
OUTPUT
7 pF
7 pF
1000 pF
1000 pF
1000 pF
1000 pF
1000 pF
1000 pF
1000 pF
15 pF
50
50
22 k
200
22 k
15 pF
V
G1S
L
1
L
2
L
3
V
DS
TEST CONDITION
V
DS
= 10 V, V
G2S
= 5 V, I
D
= 10 mA
f = 200 MHz
L
1
:
0.6 mm U.E.W. 7 mm 3T
L
2
:
0.6 mm U.E.W. 7 mm 3T
L
3
:
RFC 2.2 H
5
3SK131
[MEMO]
6
3SK131
[MEMO]
7
3SK131
[MEMO]
3SK131
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
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"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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