DATA SHEET
The information in this document is subject to change without notice.
LASER DIODE
NDL7565P Series
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE
1 550 nm OTDR APPLICATION
1996
Document No. P11620EJ4V0DS00 (4th edition)
Date Published December 1996 N
Printed in Japan
The mark
shows major revised points.
DESCRIPTION
The NDL7565P Series is a 1 550 nm newly developed Multiple Quantum Well (MQW) structure pulsed laser diode
module with single mode fiber. It is designed for light source of optical measurement equipment (OTDR).
FEATURES
Output power
P
f
= 8 mW MIN.@I
FP
= 400 mA, T
C
= 25
C
*1
Long wavelength
C
= 1 550 nm
Coaxial module without thermoelectric cooler
Single mode fiber pigtail
*1 Pulse conditions: Pulse width (PW) = 10
s, Duty = 1 %
Optical Fiber
PIN CONNECTIONS
PIN CONNECTIONS
SM-9/125
Length : 1 m
7
6
25
20
0.9
0.45
Optical Fiber
SM-9/125
Length : 1 m
0.9
7
25
20
4
2
6
12.7
17.0
0.45
2.2
2
7
CASE
2
1
7.2
3.7
1
P.C.D. = 2
CASE
2
1
4
3
2
1
LD
LD
4
3
2
1
P.C.D. = 2
NDL7565P
NDL7565P1
PACKAGE DIMENSIONS
in millimeters
2
NDL7565P Series
ORDERING INFORMATION
Part Number
Available Connector
FIange Type
NDL7565P
Without Connector
No Flange
NDL7565PC
With FC-PC Connector
NDL7565P1
Without Connector
Flat Mount Flange
NDL7565P1C
With FC-PC Connector
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Pulsed Forward Current
*1
I
FP
600
mA
Reverse Voltage of LD
V
R
2.0
V
Operating Case Temperature
T
C
-
20 to +60
C
Storage Temperature
T
stg
-
40 to +85
C
Lead Soldering Temperature (10 s)
T
sld
260
C
*1 Pulse conditions: Pulse width (PW) = 10
s, Duty = 1 %
ELECTRO-OPTICAL CHARACTERISTICS (T
C
= 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Forward Voltage
V
FP
I
FP
= 400 mA,
PW = 10
s, Duty = 1 %
2.5
4.0
V
Threshold Current
I
th
20
30
mA
Optical Output Power from Fiber
P
f
I
FP
= 400 mA,
PW = 10
s, Duty = 1 %
8
11
mW
Center Wavelength
C
I
FP
= 400 mA, PW = 10
s,
Duty = 1 %, RMS (
-
20 dB)
1 530
1 550
1 570
nm
Spectral Width
I
FP
= 400 mA, PW = 10
s,
Duty = 1 %, RMS (
-
20 dB)
10
nm
Rise Time
t
r
10 to 90 %
1.0
ns
Fall Time
t
f
90 to 10 %
1.0
ns
ELECTRO-OPTICAL CHARACTERISTICS (T
C
= 0 to +60
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Threshold Current
I
th
50
mA
Optical Output Power from Fiber
P
f
I
FP
= 400 mA,
PW = 10
s, Duty = 1 %
4
mW
Center Wavelength
C
I
FP
= 400 mA, PW = 10
s,
Duty = 1 %, RMS (
-
20 dB)
1 520
1 585
nm
Temperature Dependence of
Center Wavelength
/
T
0.35
nm/
C
Spectral Width
I
FP
= 400 mA, PW = 10
s,
Duty = 1 %, RMS (
-
20 dB)
10
nm
3
NDL7565P Series
TYPICAL CHARACTERISTICS (T
C
= 25
C, unless otherwise specified)
OPTICAL OUTPUT POWER FROM FIBER vs.
LD PULSED FORWARD CURRENT
Optical Output Power from Fiber P
f
(mW)
Pulsed Forward Current I
FP
(mA)
LONGITUDINAL MODE (FROM FIBER)
Relative Intensity (Linear Scale)
Wavelength (nm)
100
200
300
400
0
5
10
15
20
25
30
T
C
= 25 C
T
C
= 60 C
PW = 10 s
Duty = 1 %
1 550
5 nm/div
4
NDL7565P Series
LASER DIODE FAMILY FOR OTDR APPLICATION
Features
1.31
m
1.55
m
Packages
Part Number
P (mW)
MIN./TYP.
Part Number
P (mW)
MIN./TYP.
Remarks
5.6 Can
NDL7103
290/320
NDL7153
220/240
1 000
NDL7113
160/175
NDL7163
100/120
400
NDL7503P/P1
110/180
NDL7553P/P1
95/145
1 000
NDL7513P/P1
70/110
NDL7563P/P1
60/80
400
NDL7514P/P1
25/50
NDL7564P/P1
20/40
400
NDL7515P/P1
20/30
NDL7565P/P1
8/11
400
14-pin DIP Module with SMF
NDL7502P
125/190
NDL7552P
100/125
1 000
NDL7512P
90/110
NDL7562P
70/80
400
NDL7510P
40/55
NDL7560P
20/30
400
*1 Pulse conditions:
Pulse width = 10
s, Duty = 1 % (modules)
Pulse width = 1
s, Duty = 1 % (
5.6 can)
P
: No flange
P1 : With flange
With TEC and
Thermistor
I
FP
*1
(mA)
4-pin Coaxial Module with
SMF
5
NDL7565P Series
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
LEI-1201
Quality grades on NEC semiconductor devices
C11531E
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
PDF 
ZIP