PART NUMBER
NE25139
PACKAGE OUTLINE
39
SYMBOL
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
Noise Figure at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
dB
1.1
2.5
G
PS
Power Gain at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
dB
16
20
BV
DSX
Drain to Source Breakdown Voltage at V
G1S
= -4 V,
V
G2S
= 0, I
D
= 10
A
V
13
I
DSS
Saturated Drain Current at V
DS
= 5 V, V
G2S
= 0 V, V
G1S
= 0 V
mA
5
20
40
V
G1S (OFF)
Gate 1 to Source Cutoff Voltage at V
DS
= 5 V,
V
G2S
= 0 V, I
D
= 100
A
V
-3.5
V
G2S (OFF)
Gate 2 to Source Cutoff Voltage at V
DS
= 5 V,
V
G1S
= 0 V, I
D
= 100
A
V
-3.5
I
G1SS
Gate 1 Reverse Current at V
DS
= 0, V
G1S
= -4V, V
G2S
= 0
A
10
I
G2SS
Gate 2 Reverse Current at V
DS
= 0, V
G2S
= -4V, V
G1S
= 0
A
10
|Y
FS
|
Forward Transfer Admittance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1.0 kHz
mS
18
25
35
C
ISS
Input Capacitance at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1 MHz
pF
0.5
1.0
1.5
C
RSS
Reverse Transfer Capacitance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1 MHz
pF
0.02
0.03
FEATURES
SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
LOW C
RSS
: 0.02 pF (TYP)
HIGH GPS: 20 dB (TYP) AT 900 MHz
LOW NF: 1.1 dB TYP AT 900 MHz
L
G1
= 1.0
m, L
G2
= 1.5
m, W
G
= 400
m
ION IMPLANTATION
AVAILABLE IN TAPE & REEL OR BULK
Power Gain, G
PS
(dB)
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
DS
(V)
Noise Figure, NF (dB
)
GENERAL PURPOSE
DUAL-GATE GaAS MESFET
NE25139
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a mini-mold (surface
mount) package.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
California Eastern Laboratories
20
0
10
0 5 10
0
10
G
PS
V
G2S
= 1 V
V
G2S
= 0.5 V
V
G2S
= 2 V
I
D
= 10 mA
f = 900 MHz
5
NF
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain to Source Voltage
V
13
V
G1S
Gate 1 to Source Voltage
V
-4.5
V
G2S
Gate 2 to Source Voltage V -4.5
I
D
Drain Current mA I
DSS
P
T
Total Power Dissipation
mW
200
T
CH
Channel Temperature
C
125
T
STG
Storage Temperature
C
-55 to +125
Note:
1. Operation in excess of anyone of these parameters may result
in permanent damage.
Ambient Temperature, T
A
(
C)
TOTAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Forward Transfer Admittance, |Y
FS
| (mS)
Total Power Dissipation, P
T
(mW)
Drain Current, I
D
(mA)
NE25139
(V
DS
= 5 V, V
G2S
= 0 V, I
DS
= 10 mA)
FREQ.
NF
OPT
G
A
OPT
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
0.5
0.9
18.5
0.9
18
1.9
0.9
1.2
16.0
0.82
28
1.2
1.5
1.5
14.6
0.71
45
0.9
2.0
1.9
12.5
0.55
75
0.67
3.0
2.5
11.0
0.34
116
0.5
4.0
3.3
9.5
0.25
154
0.4
TYPICAL NOISE PARAMETERS
(T
A
= 25
C)
Drain Current, I
D
(mA)
250
200
150
100
50
0
0 25 50 75 100 125
FREE AIR
Gate 1 to Source Voltage, V
G1S
(V)
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
Forward Transfer Admittance, |Y
FS
| (mS)
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
30
20
10
0
0 10 20 30
V
G2S
= 1.0 V
V
G2S
= 0.5 V
V
DS
= 5 V
f = 1 kHz
Gate 1 to Source Voltage, V
G1S
(V)
30
20
10
0
-2.0 -1.0 0 +1.0
0.5 V
0 V
-0.5 V
V
G2S
= 1.0V
V
DS
= 5V
30
20
10
0
-1.0 0 +1.0
0 V
V
G2S
= 1.0
0.5 V
-0.5 V
V
DS
= 5V
f = 1kHz
-2.0
Input Capacitance, C
ISS
(pF)
POWER GAIN AND NOISE FIGURE vs.
GATE 2 TO SOURCE VOLTAGE
Drain Current, I
D
(mA)
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
2.0
1.0
-1.0
0 +1.0
V
G2S
= 1 V at I
D
= 10 mA
V
G2S
= 1 V at I
D
= 5 mA
V
DS
= 5 V
f = 1kHz
1
1
Gate 2 to Source Voltage, V
G2S
(V)
INPUT CAPACITANCE vs.
GATE 2 TO SOURCE VOLTAGE
Gate 2 to Source Voltage, V
G2S
(V)
NE25139
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Power Gain, G
P
(dB)
Note:
1. Initial bias conditions. V
G1S
set to obtain
specified drain current.
Note:
1. Initial bias conditions. V
G1S
set to obtain
specified drain current.
Noise Figure, NF (dB)
Noise Figure, NF (dB)
Power Gain, G
P
(dB)
30
15
0
-15
-30
-45
-3.0 -2.0 -1.0 0 +1.0 +2.0
0
5
10
G
PS
NF
V
DS
= 5 V
V
G2S
= 1 V
I
D
= 10 mA
f = 900 MHz
1
25
20
15
10
5
0
0 5 10
0
5
V
DS
= 5 V
V
G2S
= 1 V
f = 900 MHz
G
PS
NF
10
Parameters
FET1
FET2
Parameters
FET1
FET2
UGW
100e-6
100e-6
IDSOC
0.07
0.07
NGF
4
4
RDB
1.0e9
1.0e9
IS
8.78e-10
8.78e-10
CBS
0.16e-12
0.16e-12
N
1.33
1.33
GDBM
0.005
0.005
RG
0
0
KDB
11.1
11.1
RD
0
0
VDSM
7.1e-11
7.1e-11
RS
0
0
GMMAXAC
0.0475
0.0875
RIS
0
0
GAMMAAC
0.0107
0.0051
RID
0
0
KAPAAC
0.0001
0.0052
TAU
5.17e-12
5.17e-12
PEFFAC
44.9
44.9
CDSO
1.19e-13
1.19e-13
VTOAC
-1.584
-1.545
C11O
6.1e-13
6.1e-13
VTSOAC
-100
-100
C11TH
1.6e-13
1.6e-13
VDELTAC
0.062
0.062
VINFL
-1.1
-1.1
GMMAX
0.0554
0.0304
DELTGS
1.82
1.82
GAMMA
0.006
0.005
DELTDS
0.682
0.682
KAPA
0.046
0.0005
LAMBDA
\0.036
0.036
PEFF
1.636
1.636
C11DELT
0
0
VTO
-1.57
-1.5
C12O
0
0
VTSO
-100
-10
C12SAT
6.81e-14
6.81e-14
VDELT
0.135
0.1
CGDSAT
6.81e-14
6.81e-14
VCH
1
1
KBK
0.03
0.03
VSAT
1.119
1.119
VBR
6.5
6.5
VGO
-0.654
-0.0035
NBR
2
2
VDSO
3
10
NONLINEAR MODEL
FET NONLINEAR MODEL PARAMETERS
(1)
(1) Libra EEFET3 Model
time
seconds
capacitance
farads
inductance
henries
resistance
ohms
voltage
volts
current
amps
Parameter
Units
UNITS FOR MODEL PARAMETERS
NE25139
NE25139
MODEL RANGE
Frequency:
0.1 to 4 GHz
Bias:
V
DS
= 5 V, Vg
1
s= -0.785 V, Vg
2
s= 0 V, I
D
= 10 mA
SCHEMATIC
P1
port = 3
Pgate1
port = 1
C12
C = 0.32
Cg1s
C = 0.41
P4
port = 4
Pdrain
port = 2
Cg1d
C = 5.64e-03
Ls
L = 1.78
Rd
R = 4.58
RDS
R = 711
R12
R = 1.13
Rs
R = 5.79
Lg2
L = 0.40
Lg1
L = 1.65
Rg1
R = 1.52
Cg2s
C = 0.39
CDS
C = 7.60e-02
Rg2
R = 1.44
Cg2d
C = 0.15
CAP
CAP
CAP
CAP
CAP
CAP
RES
RES
RES
RES
RES
RES
IND
IND
IND
PORT
PORT
PORT
PORT
EEFET3
FET2
UGW=0
N=0
FILE = NE720_b.mdif
MODE = nonlinear
EEFET3
FET1
UGW=0
N=0
FILE = NE720_b.mdif
MODE = nonlinear
NOTES:
1. This UGW value scales the model parameters on page 1.
2. This N value is the number of gate fingers and scales the
model parameters on page 1.
UNITS
Parameter
Units
capacitance
picofarads
inductance
nanohenries
resistance
ohms
NONLINEAR MODEL
NE25139
TYPICAL COMMON SOURCE SCATTERING PARAMETERS
(T
A
= 25
C)
Note:
1. Gain Calculations:
NE25139
V
DS
= 5 V, V
G2S
= 0 V, I
DS
= 10 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
S
21
MAG
1
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG (dB)
(dB)
0.1
1.0
-4
1.96
174
0.001
87
0.96
-1
0.2
1.0
-8
1.92
169
0.001
85
0.96
-2
0.4
0.99
-15
1.91
158
0.001
82
0.95
-3
0.6
0.97
-23
1.90
148
0.002
81
0.94
-3
0.9
0.94
-35
1.90
132
0.004
80
0.94
-4
1.0
0.92
-39
1.90
126
0.004
79
0.94
-5
1.5
0.82
-61
1.88
99
0.006
78
0.94
-6
2.0
0.69
-86
1.52
71
0.008
95
0.95
-9
2.5
0.60
-110
1.41
45
0.012
118
0.96
-12
3.0
0.51
-131
1.39
19
0.023
153
0.97
-18
3.5
0.51
-147
1.37
-6
0.039
162
0.97
-27
4.0
0.63
-167
1.20
-47
0.042
157
0.96
-42
0.47
5.8
32.9
0.51
5.7
32.8
0.70
5.6
32.8
1.14
5.6
27.5
1.18
5.6
24.2
1.49
5.6
22.6
2.03
5.5
19.2
2.21
3.6
16.6
1.34
3.0
17.2
0.32
2.9
17.8
0.04
2.1
15.1
0.07
1.6
14.6
Coordinates in Ohms
Frequency in GHz
(V
DS
= 5 V, V
G2S
= 0 V, I
DS
= 10 mA)
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
j250
j150
j100
j50
10
10
25
50
100 150 250
j10
0
-j10
-j25
-j50
-j100
-j150
-j250
S11
.1 GHz
S22
.1 GHz
S22
4 GHz
S11
4 GHz
+90
+60
+30
+120
+150
-150
-120
-90
-60
-30
0
+180
S21
.1 GHz
S21
.25
1.0
1.5
2.0
2.5
.20
.15
.10
.5
S12
.1 GHz
S12
4 GHz
K
S
21
MAG
1
(dB)
(dB)
Note:
1. Gain Calculations:
PART
AVAILABILITY
I
DSS
RANGE
MARKING
NUMBER
(mA)
NE25139
Bulk up to 3K
5 - 40
NE25139-T1
3K/Reel
5 - 40
NE25139U71
Bulk up to 3K
5 - 15
U71
NE25139T1U71
3K/Reel
5 - 15
U71
NE25139U72
Bulk up to 3K
10 - 25
U72
NE25139T1U72
3K/Reel
10 - 25
U72
NE25139U73
Bulk up to 3K
20 - 35
U73
NE25139T1U73
3K/Reel
20 - 35
U73
NE25139U74
Bulk up to 3K
30 - 40
U74
NE25139T1U74
3K/Reel
30 - 40
U74
ORDERING INFORMATION
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 39
(SOT-143)
NE25139
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA
Coordinates in Ohms
Frequency in GHz
(V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA)
TYPICAL COMMON SOURCE SCATTERING PARAMETERS
(T
A
= 25
C)
FREQUENCY
S
11
S
21
S
12
S
22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.1
.99
-3
2.36
177
.001
87
.97
-1
0.2
.99
-7
2.39
169
.001
85
.98
-3
0.3
.99
-9
2.31
164
.002
82
.98
-3
0.4
.98
-13
2.23
160
.002
82
.97
-6
0.5
.97
-16
2.42
158
.003
81
.99
-6
0.6
.97
-19
2.30
150
.003
81
.96
-8
0.7
.96
-22
2.33
146
.004
80
.99
-9
0.8
.95
-25
2.23
142
.005
79
.96
-9
0.9
.94
-29
2.45
137
.005
79
.99
-13
1.0
.92
-29
2.30
131
.006
78
.97
-11
1.1
.91
-35
2.35
126
.006
78
.98
-15
1.2
.88
-35
2.37
124
.006
78
.99
-13
0.47
5.83
2.9
0.51
5.7
32.8
0.70
5.6
32.8
1.14
5.6
27.5
1.18
5.6
24.2
1.49
5.6
22.6
2.03
5.5
19.2
2.21
3.6
16.6
1.34
3.0
17.2
0.32
2.9
17.8
0.04
2.1
15.1
0.07
1.6
14.6
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
MAG = Maximum Available Gain, MSG = Maximum Stable Gain
NE25139
2.8
+0.2
-0.3
+0.10
-0.05
(LEADS 2, 3, 4)
0.6
+0.10
-0.05
0.16
+0.10
-0.06
5
5
0.8
1.1
+0.2
-0.1
1
2
3
0 to 0.1
4
0.4
2.9
0.2
0.95
0.85
1.9
1.5
+0.2
-0.1
Note: All dimensions are typical unless otherwise specified.
PIN
CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
j250
j150
j100
j50
j25
j10
0
-j10
-j25
-j50
-j100
-j150
-j250
S11
.1 GHz
S22
.1 GHz
S22
4 GHz
S11
4 GHz
10
25
50
100 150 250
+90
+60
+30
+120
+150
-150
-120
-90
-60
-30
0
+180
S21
1.2 GHz
S21
.25
1.0
1.5
2.0
2.5
.20
.15
.10
.5
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
8/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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