1996
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32400, NE24200
C to Ka BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET CHIP
DESCRIPTION
NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs
and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable
for commercial systems, industrial and space applications.
FEATURES
Super Low Noise Figure & High Associated Gain
NF = 0.6 dB TYP., G
a
= 11.0 dB TYP. at f = 12 GHz
Gate Length : L
g
= 0.25
m
Gate Width : W
g
= 200
m
ORDERING INFORMATION
PART NUMBER
QUALITY GRADE
APPLICATIONS
NE32400
Standard (Grade D)
Commercial
NE24200
Grade C and B (B is special order)
Industrial, space
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
V
DS
4.0
V
Gate to Source Voltage
V
GS
3.0
V
Drain Current
I
D
I
DSS
mA
Total Power Dissipation
P
tot
*
200
mW
Channel Temperature
T
ch
175
C
Storage Temperature
T
stg
65 to +175
C
* Chip mounted on a Alumina heatsink (size: 3
3
0.6
t
)
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Gate to Source Leak Current
I
GSO
0.5
10
A
V
GS
= 3 V
Saturated Drain Current
I
DSS
15
40
70
mA
V
DS
= 2 V, V
GS
= 0 V
Gate to Source Cutoff Voltage
V
GS(off)
0.2
0.8
2.0
V
V
DS
= 2 V, I
D
= 100
A
Transconductance
g
m
45
60
mS
V
DS
= 2 V, I
D
= 10 mA
Thermal Resistance
R
th
*
260
C/W
channel to case
Noise Figure
NF
0.6
0.7
dB
V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
Associated Gain
G
a
10.0
11.0
dB
RF performance is determined by packaging and testing 10 chips per wafer.
Wafer rejection criteria for standard devices is 2 rejects per 10 samples.
Document No. P11345EJ2V0DS00 (2nd edition)
(Previous No. TD-2358)
Date Published May 1996 P
Printed in Japan
NE32400, NE24200
2
CHIP DIMENSIONS (Unit:
m)
Drain
Source
Gate
Gate
Source
Drain
47
40
113
45
96
53
61
60
150
350
41
112
56
400
Thickness = 140 m
: BONDING AREA
TYPICAL CHARACTERISTICS (T
A
= 25 C)
0
1
2
3
4
5
V
DS
Drain to Source Voltage V
50
40
30
20
10
I
D
Drain Current mA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
= 0 V
0.2 V
0.4 V
0.6 V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0
50
100
150
200
250
T
A
Ambient Temperature C
250
200
150
100
50
P
tot
Total Power Dissipation mW
NE32400, NE24200
3
Gain Calculations
MSG.
=
|
|
|
|
S
S
21
12
K
1 |
|
| S
|
| S
|
2 | S
|| S
|
2
11
2
22
2
12
21
=
+
-
-
MAG.
| S
|
| S
|
(K
K
1)
21
12
2
=
-
=
-
S
S
S
S
11
22
21
12
50
40
30
20
10
1.0
0
V
GS
Gate to Source Voltage V
I
D
Drain Current mA
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
2.0
0
V
DS
= 2 V
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
V
DS
= 2.0 V
I
D
= 10 mA
24
20
16
12
8
40
f Frequency GHz
MSG. Maximum Stable Gain dB
|S
21s
|
2
Foward Insertion Gain dB
4
30
20
10
8
6
4
2
1
MSG.
|S
21s
|
2
5
4
3
2
1
30
f Frenquency GHz
NF Noise Figure dB
NOISE FIGURE ASSOCIATED vs.
FREQUENCY
0
20
14
10
8
6
4
2
1
24
20
15
12
8
4
G
a
Associated Gain dB
Ga
NF
3
2
1
100
I
DS
/I
DSS
Ratio of Drain Current to Zero-Gate Voltage Current %
NF Noise Figure dB
NOISE FIGURE, ASSOCIATED GAIN vs. RATIO
OF DRAIN CURRENT TO ZERO-GATE
VOLTAGE CURRENT
0
60
40
20
8
6
4
2
1
5
0
G
a
Associated Gain dB
V
DS
= 2 V
I
D
= 10 mA
10
15
NF
Ga
V
DS
= 2 V
f = 12 GHz
NE32400, NE24200
4
S-PARAMETERS
V
DS
= 2 V, I
D
= 10 mA
START 1 GHz, STOP 26 GHz, STEP 1 GHz
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
IN
D
E
G
R
E
E
S
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
10
20
30
40
50
00
60
70
80
90
100
110
120
130
140
150
0
0.02
0.48
0.04
0.46
0.06
0.44
0.08
0.42
0.10
0.40
0.12
0.38
0.04
0.36
0.16
0.34
0.18
0.32
0.20
0.30
0.22
0.28
0.24
0.26
0.26
0.24
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.48
0.02
0
0.49
0.47
0.45
0.43
0.41
0.39
0.37
0.35
0.33
0.31
0.29
0.27
0.25
0.23
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.01
0.01
0.03
0.05
000.07
0.09
0.11
0.13
0.15
0.17
0.19
000.21
0.23
0.25
0.27
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.49
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
2.0
5.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
10
50
20
50
10
5.0
4.0
3.0
1.8
1.6
1.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
20
(
+JX
Z
O
)
0.2
1.0
0.8
0.6
0.4
0.2
0.4
0.6
0.8
1.0
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.3
0.2
0.1
20
1.0
0.8
0.6
0.4
0.2
0.4
0.6
0.8
1.0
0.4
0.5
NE
GA
TI
VE
R
EA
CT
A
N
C
E
C
O
M
P
O
N
E
N
T
(
JX
Z
O
)
P
O
S
IT
IV
E
R
E
A
C
TA
N
C
E
CO
M
PO
NE
NT
RESTSTANCE COMPONENT
R
Z
O
( (
0.2
26 GHz
S
22
S
11
26 GHz
1 GHz
1 GHz
NE32400, NE24200
5
S-PARAMETERS MAG. AND ANG.
V
DS
= 2 V, I
D
= 10 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MSG/MAG
MAG.
ANG.
MAG.
ANG.
MAG. ANG.
MAG.
ANG.
(MHz)
(deg.)
(deg.)
(deg.)
(deg.)
(dB)
1000
0.996
12
4.680
171
0.015
83
0.616
10
0.05
24.9
2000
0.994
23
4.603
161
0.032
76
0.613
16
0.07
21.6
3000
0.979
34
4.486
152
0.046
70
0.601
23
0.08
19.9
4000
0.963
44
4.314
143
0.059
65
0.592
30
0.10
18.6
5000
0.929
54
4.118
135
0.071
59
0.580
36
0.18
17.7
6000
0.904
62
3.872
127
0.076
55
0.578
40
0.28
17.1
7000
0.882
70
3.759
120
0.092
51
0.574
46
0.30
16.1
8000
0.851
81
3.632
111
0.097
45
0.557
52
0.35
15.7
9000
0.836
89
3.423
104
0.098
40
0.543
55
0.40
15.5
10000
0.809
97
3.290
97
0.102
40
0.529
59
0.42
15.1
11000
0.792
105
3.179
91
0.107
37
0.523
62
0.44
14.7
12000
0.774
112
3.059
84
0.112
35
0.511
67
0.45
14.4
13000
0.762
119
2.940
78
0.118
31
0.489
72
0.46
14.0
14000
0.745
124
2.807
73
0.121
28
0.479
77
0.49
13.6
15000
0.729
128
2.698
68
0.124
26
0.468
81
0.51
13.4
16000
0.717
133
2.616
63
0.129
24
0.464
85
0.54
13.1
17000
0.697
137
2.526
58
0.134
21
0.462
90
0.58
12.8
18000
0.685
141
2.421
54
0.137
19
0.460
94
0.63
12.5
19000
0.665
146
2.315
49
0.135
19
0.460
96
0.68
12.3
20000
0.647
150
2.220
45
0.136
18
0.460
98
0.70
12.1
21000
0.625
156
2.159
40
0.138
18
0.459
100
0.71
11.9
22000
0.612
160
2.046
34
0.138
17
0.457
102
0.72
11.7
23000
0.596
166
1.892
30
0.139
17
0.455
103
0.73
11.5
24000
0.592
170
1.866
27
0.140
16
0.455
105
0.74
11.3
25000
0.587
174
1.780
25
0.141
21
0.454
107
0.74
11.2
26000
0.584
178
1.751
21
0.141
22
0.453
108
0.75
11.0
NE32400, NE24200
6
CHIP HANDLING
DIE ATTACHMENT
Die attach operation can be accomplished with Au-Sn (within a 300 C 10 s) performs in a forming gas
environment.
Epoxy die attach is not recommend.
BONDING
Bonding wires should be minimum length, semi hard gold wire (3-8 % elongation) 20 microns in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Bonding time should be
kept to minimum.
As a general rule, the bonding operation should be kept within a 280 C, 2 minutes for all bonding wires.
If longer periods are required, the temperature should be lowered.
PRECAUTIONS
The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only
and does not preclude the necessity of a clean environment.
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static
discharge.
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky
barrier gate.
CAUTION
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.
NE32400, NE24200
7
[MEMO]
2
NE32400, NE24200
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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