NEC's NPN MEDIUM POWER
MICROWAVE TRANSISTOR
NE46100
NE46134
FEATURES
HIGH DYNAMIC RANGE
LOW IM DISTORTION: -40 dBc
HIGH OUTPUT POWER : 27.5 dBm at TYP
LOW NOISE: 1.5 dB TYP at 500 MHz
LOW COST
PART NUMBER
NE46100
NE46134
EIAJ
1
REGISTERED NUMBER
2SC4536
PACKAGE OUTLINE
00 (CHIP) 34
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP MAX MIN
TYP MAX
f
T
Gain Bandwidth Product at V
CE
= 10 V, I
C
= 100 mA
GHz
5.5
5.5
NF
MIN
Minimum Noise Figure
3
at V
CE
= 10 V, I
C
= 50 mA, 500 MHz
dB
1.5
1.5
V
CE
= 10 V, I
C
= 50 mA, 1 GHz
dB
2.0
2.0
G
L
Linear Gain, V
CE
= 12.5 V, I
C
= 100 mA, 2.0 GHz
dB
9.0
V
CE
= 12.5 V, I
C
= 100 mA, 1.0 GHz
dB
8.0
|S
21E
|
2
Insertion Power Gain at 10 V, 50 mA, f = 1.0 GHz
dB
10.0
5.5
7.0
h
FE
DC Current Gain
2
at V
CE
= 10 V, I
C
= 50 mA
40
200
40
200
I
CBO
Collector Cutoff Current at V
CB
= 20 V, I
E
= 0 mA .
A
5.0
5.0
I
EBO
Emitter Cutoff Current at V
EB
= 2 V, I
C
= 0 mA
A
5.0
5.0
P
1dB
Output Power at 1 dB Compression, V
CE
= 12.5 V, I
C
= 100 mA, 2.0 GHz
dBm
27.0
V
CE
= 12.5 V, I
C
= 100 mA, 1.0 GHz
dBm
27.5
IM
3
Intermodulation Distortion, 10 V, 100 mA, F1 = 1.0 GHz, F2 = 0.99 GHz,
Total P
OUT
= 20 dBm
dBc
-40.0
-40.0
R
TH (J-C)
Thermal Resistance (Junction to Case)
C/W
30
32.5
R
TH (J-A)
Thermal Resistance (Junction to Ambient)
C/W
312.5
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed: PW
350 ms, Duty Cycle
2%
3. RS = RL = 50
untuned
DESCRIPTION
NEC's NE461 series of NPN silicon epitaxial bipolar transis-
tors is designed for medium power applications requiring high
dynamic range. This device exhibits an outstanding combina-
tion of high gain and low intermodulation distortion, as well as
low noise figure. The NE461 series offers excellent perfor-
mance and reliability at low cost through NEC's titanium,
platinum, gold metallization system and direct nitride passiva-
tion of the surface of the chip. Devices are available in a low
cost surface mount package (SOT-89) as well as in chip form.
NE46134
TYPICAL OUTPUT POWER
vs. INPUT POWER
f = 1.0 GHz, I
C
= 100 mA
Output Power, P
OUT
(dBm)
Input Power, P
IN
(dBm)
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
5 10 15 20 25
30.0
28.0
26.0
24.0
22.0
20.0
18.0
16.0
14.0
12.0
5 V
10 V
12.5 V
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
30
V
CEO
Collector to Emitter Voltage
V
15
V
EBO
Emitter to Base Voltage
V
3
I
C
Collector Current
mA
250
P
T
Total Power Dissipation
NE46100
2
W
3.75
NE46134
3
W
2.0
T
J
Junction Temperature
NE46100
C
200
NE46134
C
150
T
STG
Storage Temperature
NE46100
C
-65 to +200
NE46134
C
-65 to +150
NE46100, NE46134
COLLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Chip mounted on an infinite heat sink (see AN-1001 for handling
instructions).
3. Packaged device mounted on 0.7 mm x 2.5 cm
2
double sided
ceramic substrate (copper plating).
NE46100, NE46134
NE46100, NE46134
NOISE FIGURE vs. COLLECTOR CURRENT
V
CE
= 10 V, f = 1 GHz
Noise Figure,NF(dB)
Total Power Dissipation, P
T
(W)
NE46100, NE46134
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Collector Current, Ic (mA)
Ambient Temperature, T
A
(
C)
NE46134
TYPICAL NOISE PARAMETERS
(T
A
= 25
C)
FREQ.
NF
OPT
G
A
OPT
(GHz)
(dB)
(dB)
MAG
ANG
RN/50
V
CC
= 10 V, I
C
= 50 mA
0.5
1.5
13.5
0.34
-176
0.09
TYPICAL PERFORMANCE CURVES
(T
A
=25
C)
Insertion Power Gain, |S
21E
|
2
(dB)
Maximum Available Gain, MAG (dB)
NE46134
INSERTION POWER GAIN AND MAXIMUM
AVAILABLE GAIN vs. COLLECTOR CURRENT
V
CE
= 10 V, f = 1 GHz
Collector Current, I
C
(mA)
R
S
= R
L
= 50
Untuned
MAG
|S
21
E
|
2
0 50 100 300
10
8
6
4
2
0
0 10 20
100
80
60
40
20
0
I
B
= 0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
0 50 100 150 200
85
87.5
4.0
3.75
3.0
2.0
1.0
0.4
NE46100
R
TH (J-C)
30C/W
WITH INFINITE
HEAT SINK
NE46134
R
TH (J-C)
32.5C/W
WITH INFINITE
HEAT SINK
NE46134
R
TH (J-A)
312.5C/W
WITH INFINITE
HEAT SINK
0
5 10 100 200
5
4
3
2
1
0
NE46100, NE46134
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Collector Current, I
C
(mA)
Total P
IN
= 6.0 dBm
F
1
= 1.0 GHz, F
2
= 0.99 GHz
Note: IM
5
> than 58 dB down from carrier for
measured currents greater than 40 mA.
Collector Current, I
C
(mA)
2 Tone Test
Total P
IN
= 12.1 dBm
F
1
= 1.0 GHz, F
2
= 0.99 GHz
IM
3
(dBc)
IM
5
(dBc)
IM
3
(dBc)
-5 0 5 10 15 20 25 30
40.0
30.0
20.0
10.0
0.0
-10.0
-20.0
-30.0
-40.0
-50.0
1 Tone
2 Tone
IM
3
IM
5
P
OUT
(Total)
IP
3
32.6 dBm
P
OUT
/IM(dBm)
P
OUT
/IM(dBm)
Input Power, P
IN
Total (dBm)
Input Power, P
IN
Total (dBm)
Gain Bandwidth Product, ft (GHz)
Collector Current, I
C
(mA)
3
RD
Order Intermodulation Distortion, IM
3
- (dBc)
2
ND
Order Intermodulation Distortion, IM
2
+ (dBc)
2
ND
Order Intermodulation Distortion, IM
2
- (dBc)
Collector Current, I
C
(mA)
NE46134
3RD ORDER INTERMODULATION DISTORTION,
2ND ORDER INTERMODULATION DISTORTION
(+ AND -) vs. COLLECTOR CURRENT
NE46100, NE46134
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
V
CE
= 10 V
NE46134
TYPICAL OUTPUT
POWER/INTERMODULATION
DISTORTION vs. INPUT POWER
f = 1.0 GHz, V
CE
= 10 V, I
C
= 100 mA
2 Tone Test F
1
= 1.0 GHz, F
2
= 0.99 GHz
NE46134
TYPICAL OUTPUT
POWER/INTERMODULATION
DISTORTION vs. INPUT POWER
f = 1.0 GHz, V
CE
= 5 V, I
C
= 100 mA
2 Tone Test F
1
= 1.0 GHz, F
2
= 0.99 GHz
NE46100, NE46134
INTERMODULATION DISTORTION
vs. COLLECTOR CURRENT
f = 1.0 GHz, V
CE
= 10 V
NE46100, NE46134
INTERMODULATION DISTORTION vs.
COLLECTOR CURRENT
f = 1.0 GHz, V
CE
= 5 V
5 10 50 100 300
10
5
1
0.2
0.5
0 40 80 120 160
0
-10
-20
-30
-40
-50
-60
IM
3
IM
5
-5 0 5 10 15 20 25 30
40.0
30.0
20.0
10.0
0.0
-10.0
-20.0
-30.0
-40.0
-50.0
1 Tone
2 Tone
IM
3
IM
5
P
OUT
(Total)
IP
3
32.6 dBm
0 40 80 120 160
0
-10
-20
-30
-40
-50
IM
3
IM
2
+
IM2-
IM
3
: V
O
=
110 dB
V/75
2 tone each
f = 2 x 190 MHz - 200 MHz
IM
2
+: V
O
= 105 dB
V/75
2 tone each
f = 90 MHz + 100 MHz
IM
2
-: V
O
= 105 dB
V/75
2 tone each
f = 190 MHz - 90 MHz
10 50 100 300
80
70
60
50
40
0
V
CE
= 5 V, l
C
= 50 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
2
(MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
100
0.778
-137
26.776
114
0.028
30
0.555
-102
0.16
29.8
200
0.815
-159
14.407
100
0.035
29
0.434
-135
0.36
26.2
500
0.826
-177
5.855
84
0.040
38
0.400
-162
0.75
21.7
800
0.827
176
3.682
76
0.052
43
0.402
-169
0.91
18.5
1000
0.826
173
2.963
71
0.058
47
0.405
-172
1.02
16.3
1200
0.825
170
2.441
66
0.064
47
0.412
-174
1.08
14.0
1400
0.820
167
2.111
61
0.069
47
0.413
-176
1.17
12.4
1600
0.828
165
1.863
57
0.078
54
0.426
-177
1.15
11.4
1800
0.827
162
1.671
53
0.087
50
0.432
-178
1.14
10.6
2000
0.828
159
1.484
49
0.093
50
0.431
-180
1.17
9.5
2500
0.822
153
1.218
39
0.11
48
0.462
177
1.18
7.8
3000
0.818
148
1.010
30
0.135
46
0.490
174
1.16
6.3
3500
0.824
142
0.876
21
0.147
44
0.507
170
1.16
5.3
4000
0.812
137
0.762
13
0.168
38
0.535
167
1.14
4.3
V
CE
= 5 V, l
C
= 100 mA
100
0.778
-144
27.669
111
0.027
35
0.523
-114
0.27
30.2
200
0.820
-164
14.559
97
0.029
29
0.445
-144
0.42
27.0
500
0.832
-179
5.885
84
0.035
38
0.435
-166
0.81
22.2
800
0.833
175
3.691
76
0.048
45
0.435
-173
0.95
18.8
1000
0.831
172
2.980
71
0.056
51
0.437
-176
1.05
16.0
1200
0.836
169
2.464
67
0.061
52
0.432
-178
1.11
14.0
1400
0.829
166
2.121
61
0.072
53
0.447
-180
1.12
12.6
1600
0.831
164
1.867
58
0.080
54
0.445
179
1.14
11.4
1800
0.827
161
1.671
54
0.090
53
0.460
178
1.14
10.4
2000
0.830
159
1.499
49
0.096
52
0.456
176
1.15
9.6
2500
0.831
153
1.228
40
0.115
51
0.479
173
1.15
8.0
3000
0.821
147
1.018
31
0.134
48
0.504
170
1.18
6.3
3500
0.820
142
0.881
23
0.155
42
0.516
167
1.14
5.3
4000
0.812
136
0.779
14
0.170
41
0.543
164
1.16
4.2
Notes:
1. S-Parameters include Bond wires.
Base:
Total 1 wire, 1 per Bond Pad, 0.0259" (658
m) long each wire.
Collector: Total 1 wire, 1 per Bond Pad, 0.0182" (463
m) long each wire.
Emitter:
Total 2 wires, 1 per side, 0.0224" (569
m) long each wire.
Wire:
0.0007" (17.8
m) dia., gold.
2. Gain Calculations:
NE46100, NE46134
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
1
(T
A
= 25
C)
Coordinates in Ohms
Frequency in GHz
V
CE
= 5 V, I
C
= 50 mA
NE46100
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
0
+30
+60
+90
+120
+150
180
-150
-120
-90
-60
-30
S
21
4 GHz
S
12
4 GHz
S
21
0.1 GHz
S
21
0.1 GHz
10
15
20
25
.1
.15
.2
.25
.1 GHz
S
22
.1 GHz
S
22
4 GHz
S
11
4 GHz
j100
j50
j25
j10
0
-j10
-j25
-j50
-j100
100
50
10
S
11
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
1
(T
A
= 25
C)
NE46100, NE46134
Coordinates in Ohms
Frequency in GHz
V
CE
= 8 V, I
C
= 50 mA
NE46100
V
CE
= 8 V, l
C
= 50 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
2
(MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
100
0.773
-133
27.779
115
0.031
30
0.538
-99
0.20
29.5
200
0.808
-157
15.007
100
0.033
30
0.428
-132
0.36
26.6
500
0.824
-176
6.118
85
0.041
35
0.388
-160
0.70
21.8
800
0.823
177
3.841
76
0.050
42
0.388
-168
0.91
18.8
1000
0.822
173
3.095
71
0.060
50
0.388
-171
0.99
17.2
1200
0.824
170
2.570
67
0.065
48
0.389
-173
1.05
14.6
1400
0.820
167
2.201
61
0.075
46
0.395
-175
1.06
13.2
1600
0.825
165
1.937
57
0.080
49
0.410
-176
1.09
12.0
1800
0.822
162
1.747
53
0.084
48
0.416
-177
1.15
10.9
2000
0.821
160
1.551
49
0.095
50
0.421
-179
1.15
9.8
2500
0.816
154
1.267
39
0.116
50
0.449
177
1.16
8.0
3000
0.817
148
1.051
30
0.128
45
0.474
175
1.17
6.7
3500
0.817
143
0.910
22
0.154
45
0.496
171
1.12
5.6
4000
0.807
137
0.800
13
0.169
40
0.527
168
1.13
4.6
V
CE
= 8 V, l
C
= 100 mA
100
0.771
-141
28.901
111
0.025
27
0.507
-109
0.23
30.6
200
0.816
-162
15.323
98
0.028
23
0.434
-142
0.38
27.4
500
0.823
-177
6.183
84
0.038
36
0.417
-165
0.76
22.1
800
0.822
176
3.889
76
0.047
48
0.419
-172
1.01
18.7
1000
0.824
172
3.124
71
0.057
49
0.418
-175
1.02
16.5
1200
0.822
169
2.605
67
0.064
54
0.422
-177
1.09
14.2
1400
0.816
166
2.223
62
0.073
56
0.426
-178
1.15
12.5
1600
0.821
164
1.962
58
0.079
54
0.435
180
1.15
11.6
1800
0.823
161
1.751
54
0.088
54
0.443
179
1.14
10.7
2000
0.823
159
1.563
50
0.097
55
0.438
177
1.17
9.6
2500
0.816
153
1.292
40
0.117
51
0.462
174
1.16
8.0
3000
0.814
148
1.061
31
0.134
48
0.491
171
1.18
6.5
3500
0.820
142
0.927
23
0.154
45
0.501
168
1.12
5.7
4000
0.807
137
0.814
15
0.170
41
0.529
165
1.15
4.4
V
CE
= 10 V, l
C
= 50 mA
100
0.780
-132
28.079
115
0.029
46
0.548
-99
0.21
29.8
200
0.809
-156
15.218
100
0.033
29
0.425
-131
0.34
26.7
500
0.819
-175
6.206
85
0.041
34
0.387
-159
0.70
21.8
800
0.817
177
3.888
76
0.048
42
0.386
-168
0.96
19.4
1000
0.821
174
3.136
71
0.060
48
0.385
-170
0.97
17.2
1200
0.821
171
2.596
67
0.063
47
0.388
-173
1.07
14.5
1400
0.814
168
2.236
62
0.068
53
0.394
-174
1.19
12.6
1600
0.819
165
1.976
58
0.075
50
0.401
-176
1.17
11.7
1800
0.816
162
1.769
53
0.084
51
0.413
-178
1.17
10.7
2000
0.819
160
1.565
49
0.094
49
0.416
-179
1.15
9.8
2500
0.815
154
1.290
39
0.116
51
0.439
178
1.14
8.2
3000
0.814
148
1.072
30
0.128
46
0.468
175
1.18
6.7
3500
0.819
143
0.920
22
0.150
44
0.488
173
1.12
5.8
4000
0.806
137
0.803
13
0.168
40
0.519
168
1.14
4.5
See notes on previous page.
.1 GHz
.1 GHz
S
22
4 GHz
S
11
4 GHz
j100
j50
j25
j10
0
-j10
-j25
-j50
-j100
100
50
10
0
+30
+60
+90
+120
+150
180
-150
-120
-90
-60
-30
S
21
4 GHz
S
12
4 GHz
S
21
0.1 GHz
S
21
0.1 GHz
10
15
20
25
.1
.15
.2
.25
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