PART NUMBER
NE461M02
EIAJ
1
REGISTERED NUMBER
2SC5337
PACKAGE OUTLINE
M02
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current at V
CB
= 20 V, I
E
= 0
A
0.01
5.0
I
EBO
Emitter Cutoff Current at V
EB
= 2 V, I
C
= 0
A
0.03
5.0
h
FE2
DC Current Gain at V
CE
= 10 V, I
C
= 50 mA
40
120
200
|S
21E
|
2
Insertion Power Gain at V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
dB
7.0
8.3
NF
1
Noise Figure 1 at V
CE
= 10 V, I
C
= 50 mA, f = 500 MHz
3
dB
1.5
3.5
NF
2
Noise Figure 2 at V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
3
dB
2.0
3.5
IM
2
2nd Order Intermodulation Distortion
dB
59.0
V
CE
= 10 V, I
C
= 50 mA, Rs = R
L
= 75
Pin = 105 dB
V/75
, f
1
= 190 MHz
f
2
= 90 MHz, f = f
1
- f
2
IM
3
3rd Order Intermodulation Distortion
dB
82.0
V
CE
= 10 V, I
C
= 50 mA, Rs = R
L
= 75
Pin = 105 dB
V/75
, f
1
= 190 MHz
f
2
= 200 MHz, f = 2 x f
1
- f
2
NE461M02
NPN EPITAXIAL SILICON
TRANSISTOR HIGH FREQUENCY
LOW DISTORTION AMPLIFIER
HIGH COLLECTOR CURRENT:
250 mA MAX
NEW HIGH GAIN POWER MINI-MOLD PACKAGE
(SOT-89 TYPE)
HIGH OUTPUT POWER AT 1 dB COMPRESSION:
27 dBm TYP at 1 GHz
HIGH IP
3
:
37 dBm TYP at 1 GHz
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M02
DESCRIPTION
The NE461M02 is an NPN silicon epitaxial bipolar transistor
designed for medium power applications requiring high dy-
namic range and low intermodulation distortion. This device
offers excellent performance and reliability at low cost through
NEC's titanium, platinum, gold metallization system and direct
nitride passivation of the surface of the chip. The NE461M02
is an excellent choice for low noise amplifiers in the VHF to UHF
band and is suitable for CATV and other telecommunication
applications.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
350
s, duty cycle
2 %.
3. Rs = R
L
= 50
, tuned.
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
BOTTOM VIEW
1.6
0.2
1.5
0.1
0.25
0.02
0.42
0.06
1.5
0.42
0.06
0.8
MIN
0.45
0.06
3.95
0.26
2.45
0.1
C
E
B
E
4.5
0.1
3.0
California Eastern Laboratories
NE461M02
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
30
V
CEO
Collector to Emitter Voltage
V
15
V
EBO
Emitter to Base Voltage
V
3.0
I
C
Collector Current
mA
250
P
T
Total Power Dissipation
2
W
2.0
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Device mounted on 0.7 mm x 16 cm
2
double-sided ceramic
substrate (copper plating).
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Collector to Emitter Voltage, V
CE
(V)
Collector Current, Ic (mA)
DC Current Gain, h
FE
Collector Current, Ic (mA)
Collector to Base Voltage, V
CB
(V)
Gain Bandwidth Product, f
T
(GHz)
Collector Current, I
C
(mA)
COLLECTOR CURRENT VS.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN VS.
COLLECTOR CURRENT
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
Feedback Capacitance, Cr
E
(pF)
I
B
=0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
100
80
60
40
20
0
10
20
300
100
50
10
0.1
1
10
100
1000
V
CE
10 V
V
CE
= 10 V
f = 1 GHz
10
5
3
2
1
0.5
0.3
10
30
50
70
100
5.0
3.0
2.0
1.0
0.5
0.3
1
3
5
10
20
30
f = 1.0 MHz
PART NUMBER
QUANTITY
PACKAGING
NE461M02-T1
1000
Tape & Reel
ORDERING INFORMATION
NE461M02
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Collector Current, Ic (mA)
Frequency, f (GHz)
Insertion Power Gain, I
S
21E
|
2
(dB)
Maximum Available Gain, MAG (dB)
Collector Current, Ic (mA)
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
Insertion Power Gain, I
S
21E
|
2
(dB)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
INSERTION POWER GAIN and MAXIMUM
AVAILABLE GAIN vs. FREQUENCY
3RD ORDER INTERMODULATION DISTORTION
2ND ORDER INTERMODULATION DISTORTION (+) &
2ND ORDER INTERMODULATION DISTORTION (-) vs.
COLLECTOR CURRENT
NOISE FIGURE vs.
COLLECTOR CURRENT
3rd Order Intermodulation Distortion, IM
3
(dBc)
2nd Order Intermodulation Distortion, IM
2+
(dBc)
2nd Order Intermodulation Distortion,IM
2-
(dBc)
10
5
0
10
30
50
70
100
V
CE
= 10 V
f = 1 GHz
20
10
0
0.2
0.4
0.6 0.8 1.0
1.4
2.0
V
CE
= 10 V
I
C
= 50 MA
|S
21E
|
2
MAG
7
6
5
4
3
2
1
0
5
10
20
50
100
V
CE
= 10 V
f = 1 GHz
80
70
60
50
40
30
10
50
100
300
IM
3
IM
2+
IM
2-
IM
3
: Vo = 110 dB
V/75
2 tone each
f = 2 x 190 MHz - 200 Mhz
IM
2+
: Vo = 105 dB
V/75
2 tone each
f = 90 MHz + 100 MHz
IM
2-
: Vo 105 dB
V/75
2 tone each
f = 190 MHz - 90 MHz
V
CE
=10 V
NE461M02
j50
j25
j10
0
-j10
-j25
-j50
-j100
j100
0
S
11
0.1 GHz
S
11
3 GHz
S
22
0.1 GHz
S
22
3 GHz
120
90
60
30
150
180
-150
-120
-90
-60
-30
0
S
21
0.1 GHz
S
12
0.1 GHz
S
21
3 GHz
S
12
3 GHz
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
NE461M02
V
CE
= 5 V, I
C
= 50 mA
0.100
0.603
-142.0
22.351
109.2
0.031
47.3
0.456
-100.7
0.50
28.6
0.200
0.615
-165.0
11.847
95.2
0.042
52.4
0.345
-129.0
0.77
24.5
0.400
0.618
178.5
6.043
83.2
0.066
60.8
0.309
-147.0
0.97
19.6
0.600
0.616
168.9
4.072
75.1
0.092
63.4
0.307
-152.1
1.04
15.3
0.800
0.612
161.2
3.089
68.2
0.119
63.4
0.310
-153.5
1.06
12.7
1.000
0.607
154.4
2.506
61.8
0.146
62.2
0.315
-153.6
1.07
10.8
1.200
0.602
148.0
2.123
55.8
0.172
60.4
0.321
-153.3
1.07
9.3
1.400
0.596
142.0
1.858
50.2
0.198
58.2
0.328
-152.8
1.06
8.2
1.600
0.588
136.2
1.661
44.9
0.224
55.9
0.335
-152.2
1.06
7.3
1.800
0.581
130.6
1.514
39.8
0.250
53.3
0.341
-151.7
1.05
6.5
2.000
0.572
125.0
1.397
35.1
0.275
50.6
0.347
-151.5
1.04
5.9
2.200
0.563
119.6
1.307
30.3
0.300
47.8
0.353
-151.4
1.03
5.4
2.400
0.553
114.0
1.232
25.9
0.325
44.9
0.359
-151.4
1.02
5.0
2.600
0.544
108.4
1.169
21.6
0.349
41.9
0.363
-151.8
1.01
4.6
2.800
0.535
102.7
1.118
17.5
0.373
38.8
0.369
-152.4
1.00
4.5
3.000
0.527
97.0
1.074
13.4
0.396
35.6
0.373
-153.3
1.00
4.3
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
V
CE
= 10 V, I
C
= 50 mA
0.100
0.599
-137.2
23.210
109.9
0.031
48.0
0.455
-97.0
0.48
28.7
0.200
0.602
-162.2
12.353
95.7
0.042
51.4
0.335
-125.3
0.75
24.7
0.400
0.601
179.8
6.307
83.5
0.066
60.0
0.295
-143.9
0.97
19.8
0.600
0.599
169.8
4.248
75.4
0.091
62.8
0.292
-149.2
1.03
15.6
0.800
0.596
161.9
3.220
68.4
0.117
63.0
0.295
-150.6
1.06
12.9
1.000
0.591
155.0
2.609
62.1
0.144
61.9
0.301
-150.7
1.07
11.0
1.200
0.586
148.5
2.208
56.1
0.169
60.2
0.309
-150.3
1.07
9.6
1.400
0.581
142.4
1.929
50.5
0.195
58.1
0.317
-149.7
1.06
8.4
1.600
0.573
136.6
1.722
45.2
0.220
55.8
0.325
-149.1
1.06
7.5
1.800
0.566
131.0
1.568
40.1
0.245
53.3
0.333
-148.6
1.05
6.7
2.000
0.557
125.5
1.444
35.3
0.270
50.7
0.340
-148.3
1.04
6.1
2.200
0.549
120.1
1.349
30.5
0.295
48.0
0.347
-148.2
1.03
5.6
2.400
0.540
114.5
1.269
26.1
0.319
45.1
0.354
-148.2
1.02
5.2
2.600
0.531
108.9
1.202
21.8
0.342
42.2
0.360
-148.6
1.01
4.8
2.800
0.523
103.2
1.148
17.6
0.366
39.1
0.366
-149.2
1.00
4.8
3.000
0.515
97.5
1.101
13.5
0.388
36.0
0.372
-150.1
0.99
4.5
Coordinates in Ohms
Frequency in GHz
V
CE
= 10 V, I
C
= 50 mA
NE461M02
j50
j25
j10
0
-j10
-j25
-j50
-j100
j100
0
S
11
0.1 GHz
S
11
3 GHz
S
22
0.1 GHz
S
22
3 GHz
120
90
60
30
150
180
-150
-120
-90
-60
-30
0
S
21
0.1 GHz
S
21
3 GHz
S
12
3 GHz
S
12
0.1 GHz
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
NE461M02
V
CE
= 10 V, I
C
= 100 mA
0.100
0.596
-144.8
23.959
106.7
0.029
48.5
0.422
-108.4
0.56
29.2
0.200
0.601
-166.5
12.575
93.9
0.040
55.6
0.334
-135.7
0.82
25.0
0.400
0.601
177.5
6.386
82.7
0.066
63.6
0.308
-152.0
0.99
19.9
0.600
0.600
168.1
4.296
75.0
0.093
65.3
0.306
-156.5
1.04
15.4
0.800
0.597
160.4
3.258
68.3
0.120
64.7
0.309
-157.7
1.06
12.9
1.000
0.593
153.6
2.640
62.1
0.147
63.1
0.313
-157.8
1.06
11.0
1.200
0.588
147.2
2.236
56.3
0.174
60.9
0.318
-157.4
1.06
9.5
1.400
0.581
141.2
1.953
50.8
0.201
58.5
0.324
-156.6
1.06
8.4
1.600
0.574
135.3
1.747
45.6
0.227
55.9
0.330
-155.7
1.05
7.5
1.800
0.565
129.6
1.590
40.6
0.252
53.1
0.335
-154.9
1.05
6.7
2.000
0.556
124.1
1.468
35.8
0.277
50.3
0.341
-154.2
1.04
6.1
2.200
0.547
118.7
1.371
31.1
0.302
47.4
0.346
-153.5
1.03
5.5
2.400
0.535
113.0
1.292
26.6
0.325
44.3
0.351
-153.0
1.02
5.1
2.600
0.524
107.5
1.225
22.3
0.348
41.3
0.355
-152.8
1.02
4.7
2.800
0.515
101.8
1.170
18.1
0.371
38.2
0.359
-152.8
1.01
4.4
3.000
0.505
96.1
1.122
14.1
0.393
35.1
0.363
-153.0
1.00
4.2
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
V
CE
= 12 V, I
C
= 100 mA
0.100
0.596
-143.1
24.061
106.9
0.029
48.3
0.416
-107.7
0.56
29.3
0.200
0.598
-165.5
12.640
94.0
0.040
55.1
0.328
-135.1
0.82
25.0
0.400
0.597
178.0
6.417
82.7
0.065
63.0
0.301
-151.6
0.99
19.9
0.600
0.595
168.4
4.313
74.9
0.093
64.8
0.299
-156.2
1.04
15.4
0.800
0.592
160.6
3.268
68.2
0.120
64.3
0.302
-157.4
1.06
12.8
1.000
0.588
153.7
2.647
62.0
0.147
62.8
0.306
-157.4
1.07
11.0
1.200
0.583
147.3
2.241
56.2
0.173
60.7
0.312
-156.9
1.07
9.5
1.400
0.576
141.3
1.957
50.7
0.199
58.3
0.318
-156.1
1.07
8.3
1.600
0.568
135.5
1.750
45.5
0.225
55.8
0.324
-155.2
1.06
7.4
1.800
0.560
129.9
1.593
40.5
0.250
53.1
0.330
-154.3
1.05
6.6
2.000
0.550
124.4
1.471
35.6
0.275
50.2
0.336
-153.5
1.04
6.0
2.200
0.540
119.0
1.373
31.0
0.300
47.4
0.342
-152.8
1.03
5.5
2.400
0.530
113.5
1.294
26.4
0.323
44.3
0.347
-152.3
1.03
5.0
2.600
0.520
107.9
1.228
22.1
0.346
41.3
0.353
-152.0
1.02
4.6
2.800
0.510
102.3
1.172
17.9
0.369
38.2
0.357
-151.9
1.01
4.4
3.000
0.502
96.7
1.123
13.8
0.391
35.0
0.362
-152.2
1.01
4.1
Coordinates in Ohms
Frequency in GHz
V
CE
= 12 V, I
C
= 100 mA
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -12/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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