NEC'
S
7.5 V UHF BAND
RF POWER SILICON LD-MOS FET
FEATURES
HIGH OUTPUT POWER:
P
out
= 40.0 dBm TYP., f = 900 MHz, V
DS
= 7.5 V,
P
out
= 40.5 dBm TYP., f = 460 MHz, V
DS
= 7.5 V,
HIGH POWER ADDED EFFICIENCY:
add
= 48% TYP., f = 900 MHz, V
DS
= 7.5 V,
add
= 50% TYP., f = 460 MHz, V
DS
= 7.5 V,
HIGH LINEAR GAIN:
G
L
= 15.0 dB TYP., f = 900 MHz, V
DS
= 7.5 V,
G
L
= 18.5 dB TYP., f = 460 MHz, V
DS
= 7.5 V,
SURFACE MOUNT PACKAGE:
5.7 x 5.7 x 1.1 mm MAX
SINGLE SUPPLY:
V
DS
= 2.8 to 8.0 V
NE5511279A
DESCRIPTION
NEC's NE5511279A is an N-Channel silicon power laterally
dif fused MOSFET spe cial ly designed as the transmission
power amplifi er for 7.5 V radio systems. Die are man u -
fac tured us ing NEC's NEWMOS1 tech nol o gy and housed in
a surface mount pack age. This device can deliver 40.0 dBm
output power with 48% power added effi ciency at 900 MHz
using a 7.5 V supply voltage.
UHF RADIO SYSTEMS
CELLULAR REPEATERS
TWO-WAY RADIOS
FRS/GMRS
FIXED WIRELESS
APPLICATIONS
California Eastern Laboratories
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
TEST CONDITIONS
P
out
Output Power
38.5
40.0
-
dBm
f = 900 MHz, V
DS
= 7.5 V,
I
D
Drain Current
-
2.5
-
A
P
in
= 27 dBm,
add
Power Added Effi ciency
42
48
-
%
I
DSQ
= 400 mA (RF OFF)
G
L
Linear Gain
-
15.0
-
dB
P
in
= 5 dBm
P
out
Output Power
-
40.5
-
dBm
f = 460 MHz, V
DS
= 7.5 V,
I
D
Drain Current
-
2.75
-
A
P
in
= 25 dBm,
add
Power Added Effi ciency
-
50
-
%
I
DSQ
= 400 mA (RF OFF)
G
L
Linear Gain
-
18.5
-
dB
P
in
= 5 dBm
I
GSS
Gate to Source Leak Current
-
-
100
nA
V
GS
= 6.0 V
I
DSS
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
-
-
100
nA
V
DS
= 8.5 V
V
th
Gate Threshold Voltage
1.0
1.5
2.0
V
V
DS
= 4.8 V, I
DS
= 1.5 mA
R
th
Thermal Resistance
-
5
-
C/W
Channel to Case
g
m
Transconductance
-
2.3
-
S
V
DS
= 3.5 V, I
DS
= 900 mA
BV
DSS
Drain to Source Breakdown Voltage
20
24
-
V
I
DSS
= 15
A
ELECTRICAL CHARACTERISTICS
(T
A
= 25C)
Notes:
DC performance is 100% tested. RF performance is tested on several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
0.90.2
0.20.1
(Bottom View)
3.60.2
1.50.2
0.8 MAX.
1.0 MAX.
Source
Gate
Drain
0.40.15
5.7 MAX.
5.7 MAX.
0.60.15
0.80.15
4.4 MAX.
4.2 MAX.
Source
Gate
Drain
W 3
21001
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25 C)
SYMBOLS PARAMETERS UNITS RATINGS
V
DS
Drain Supply Voltage
2
V 20.0
V
GS
Gate Supply Voltage V 6.0
I
D
Drain Current A 3.0
P
TOT
Total Power Dissipation W 20
T
CH
Channel Temperature C 125
T
STG
Storage Temperature C -55 to +125
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. V
DS
must be used under 12 V on RF operation.
NE5511279A
PART NUMBER QTY
NE5511279A-T1 12 mm wide embossed taping.
Gate pin faces the perforation side of
the tape.
1 Kpcs/Reel
NE5511279A-T1A 12 mm wide embossed taping.
Gate pin faces the perforation side of
the tape.
5 Kpcs/Reel
ORDERING INFORMATION
RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS UNITS TYP MAX
V
DS
Drain to Source Voltage V 7.5 8.0
V
GS
Gate Supply Voltage V 2.0 3.0
I
DS
Drain Current
1
A 2.5 3.0
P
IN
Input Power dBm 27 30
f = 900 MHz, V
DS
= 7.5 V
4.0
1.7
6.1
0.5
0.5
Source
Gate
Drain
5.9
1.0
1.2
0.5
Through hole
0.2
33
P.C.B. LAYOUT
(Units in mm)
79A PACKAGE
Note:
Use rosin or other material to prevent solder from penetrating
through-holes.
f = 900 MHz
5
4
3
2
1
0
45
40
35
30
25
20
10
15
20
25
30
35
P
out
I
DS
add
d
100
75
50
25
0
TYPICAL PERFORMANCE CURVES
(T
A
= 25C)
Output Power
, P
out
(dBm)
OUTPUT POWER, DRAIN CURRENT,
d
,
add
vs. INPUT POWER
Input Power,P
in
(dBm)
Drain Ef
fi
ciency
,
d (%)
Power Added
Ef
fi
ciency
,
add (%)
f = 460 MHz
5
4
3
2
1
0
45
40
35
30
25
20
10
15
20
25
30
35
P
out
I
DS
add
d
100
75
50
25
0
Output Power
, P
out
(dBm)
OUTPUT POWER, DRAIN CURRENT,
d
,
add
vs. INPUT POWER
Input Power,P
in
(dBm)
Drain Ef
fi
ciency
,
d (%)
Power Added
Ef
fi
ciency
,
add (%)
Drain to Source Current, I
DS
(A)
Drain to Source Current, I
DS
(A)
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods
and conditions other than those recommended below, contact your nearby sales offi ce.
NE5511279A
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Refl ow
Peak temperature (package surface temperature)
: 260
C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220
C or higher
: 60 seconds or less
Preheating time at 120 to 180
C :
120
30 seconds
Maximum number of refl ow processes
: 3 times
Maximum chlorine content of rosin fl ux (% mass)
: 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature)
: 215
C or below
Time at temperature of 200
C or higher
: 25 to 40 seconds
Preheating time at 120 to 150
C
: 30 to 60 seconds
Maximum number of refl ow processes
: 3 times
Maximum chlorine content of rosin fl ux (% mass)
: 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature)
: 260
C or below
Time at peak temperature
: 10 seconds or less
Preheating temperature (package surface temperature) : 120
C or below
Maximum number of fl ow processes
: 1 time
Maximum chlorine content of rosin fl ux (% mass)
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
: 350
C or below
Soldering time (per pin of device)
: 3 seconds or less
Maximum chlorine content of rosin fl ux (% mass)
: 0.2%(Wt.) or below
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
08/26/2003
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