The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10125EJ01V1DS (1st edition)
Date Published April 2002 CP(K)
Printed in Japan
SILICON POWER MOS FET
NE552R679A
3.0 V OPERATION SILICON RF POWER LD-MOS FET
FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
DATA SHEET
NEC Compound Semiconductor Devices 2001, 2002
DESCRIPTION
The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using our NEWMOS2
technology (our WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. This device can
deliver 28.0 dBm output power with 60% power added efficiency at 460 MHz under the 3.0 V supply voltage.
FEATURES
High output power
: P
out
= 28.0 dBm TYP. (V
DS
= 3.0 V, I
Dset
= 300 mA, f = 460 MHz, P
in
= 15 dBm)
High power added efficiency :
add
= 60% TYP. (V
DS
= 3.0 V, I
Dset
= 300 mA, f = 460 MHz, P
in
= 15 dBm)
High linear gain
: G
L
= 20 dB TYP. (V
DS
= 3.0 V, I
Dset
= 300 mA, f = 460 MHz, P
in
= 5 dBm)
Surface mount package
: 5.7
5.7
1.1 mm MAX.
Single supply
: V
DS
= 2.8 to 6.0 V
APPLICATIONS
Family Radio Service
: 3.0 V Handsets
ORDERING INFORMATION
Part Number
Package
Marking
Supplying Form
NE552R679A-T1
79A
AU
12 mm wide embossed taping
Gate pin face the perforation side of the tape
Qty 1 kpcs/reel
NE552R679A-T1A
12 mm wide embossed taping
Gate pin face the perforation side of the tape
Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE552R679A
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
Data Sheet PU10125EJ01V1DS
2
NE552R679A
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
8.0
V
Gate to Source Voltage
V
GS
5.0
V
Drain Current
I
DS
350
mA
Drain Current (Pulse Test)
I
DS
Note
600
mA
Total Power Dissipation
P
t
10
W
Channel Temperature
T
ch
125
C
Storage Temperature
T
stg
-
55 to +125
C
Note Duty Cycle 50%, T
on
1 s
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
2.8
3.0
6.0
V
Gate to Source Voltage
V
GS
0
2.0
3.0
V
Drain Current
I
DS
-
300
500
mA
Input Power
P
in
f = 460 MHz, V
DS
= 3.0 V
14
15
20
dBm
ELECTRICAL CHARACTERISTICS
(T
A
= +25
C, Unless otherwise specified, using NEC standard test fixture)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
I
GSO
V
GS
= 5.0 V
-
-
100
nA
Saturated Drain Current
(Zero Gate Voltage Drain Current)
I
DSS
V
DS
= 8.0 V
-
-
100
nA
Gate Threshold Voltage
V
th
V
DS
= 3.5 V, I
DS
= 1 mA
1.0
1.4
1.9
V
Thermal Resistance
R
th
Channel to Case
-
-
10
C/W
Transconductance
g
m
V
DS
= 3.0 V, I
DS
= 300 mA
-
0.6
-
S
Drain to Source Breakdown Voltage
BV
DSS
I
DSS
= 10
A
15
18
-
V
Output Power
P
out
f = 460 MHz, V
DS
= 3.0 V,
26.0
28.0
-
dBm
Drain Current
I
D
P
in
= 15 dBm,
-
320
-
mA
Power Added Efficiency
add
I
Dset
= 300 mA (RF OFF) , Note1
55
60
-
%
Linear Gain
Note2
G
L
-
20
-
dB
Note 1. DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2. P
in
= 5 dBm
Data Sheet PU10125EJ01V1DS
3
NE552R679A
TYPICAL CHARACTERISTICS (T
A
= +25
C)
P
out
I
DS
d
add
f = 460 MHz
V
DS
= 3.0 V
I
DQ
= 300 mA
f = 460 MHz
V
DS
= 3.0 V
I
DQ
= 100 mA
f = 460 MHz
V
DS
= 3.5 V
I
DQ
= 100 mA
f = 460 MHz
f = 1 MHz
V
DS
= 3.0 V
I
DQ
= 300 mA
P
out
I
DS
d
add
P
out
I
DS
d
add
IM
3
IM
5
Output Power P
out
(dBm)
Input Power P
in
(dBm)
OUTPUT POWER, DRAIN CURRENT
2Tone to Output Power P
out
(dBm)
Output Power P
out
(dBm)
OUTPUT POWER, DRAIN CURRENT
Drain Efficiency
d
(%)
Power Added Efficiency
add
(%)
OUTPUT POWER, DRAIN CURRENT
d
,
add
vs. INPUT POWER
d
,
add
vs. INPUT POWER
IMD vs. 2TONE TO OUTPUT POWER
d
,
add
vs. INPUT POWER
Input Power P
in
(dBm)
Input Power P
in
(dBm)
Drain Current
I
DS
(mA)
Output Power P
out
(dBm)
IMD (dBc)
Drain Efficiency
d
(%)
Power Added Efficiency
add
(%)
Drain Current
I
DS
(mA)
100
75
50
25
0
Drain Efficiency
d
(%)
Power Added Efficiency
add
(%)
Drain Current
I
DS
(mA)
100
75
50
25
0
30
25
20
15
10
5
-
5
5
15
0
10
20
20
30
10
20
5
15
25
-
10
-
20
-
30
-
40
-
50
-
60
-
70
30
25
20
15
10
5
30
25
20
15
10
5
1 250
1 000
750
500
250
0
1 250
1 000
750
500
250
0
1 250
1 000
750
500
250
0
100
75
50
25
0
-
5
5
15
0
10
-
5
5
15
0
10
20
Remark The graphs indicate nominal characteristics.
Data Sheet PU10125EJ01V1DS
4
NE552R679A
S-PARAMETERS
Test Conditions: V
DS
= 3.0 V, I
Dset
= 300 mA, T
A
= +25 C)
Frequency
S11
S21
S12
S22
MAG
Note
MSG
Note
K
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
dB
-
0.1
0.655
-
120.2
21.2
11.42
115.3
-
31.6
0.026
28.7
0.633
-
167.5
26.4
0.59
0.2
0.651
-
142.0
17.2
7.25
99.3
-
29.0
0.035
10.3
0.757
-
167.9
23.1
0.36
0.3
0.666
-
156.1
13.8
4.89
88.2
-
29.3
0.034
-
0.1
0.796
-
173.0
21.5
0.40
0.4
0.660
-
161.4
11.5
3.74
81.6
-
29.2
0.034
-
5.6
0.808
-
175.0
20.4
0.50
0.5
0.656
-
165.8
9.4
2.96
77.2
-
29.2
0.035
-
11.8
0.815
-
175.9
19.3
0.62
0.6
0.655
-
168.4
7.8
2.46
72.6
-
29.3
0.034
-
15.9
0.819
-
176.8
18.6
0.76
0.7
0.654
-
170.2
6.5
2.10
68.4
-
29.5
0.033
-
20.1
0.823
-
177.4
18.0
0.91
0.8
0.658
-
171.8
5.2
1.81
64.4
-
29.6
0.033
-
24.2
0.828
-
178.0
16.2
1.04
0.9
0.656
-
172.8
4.1
1.61
60.6
-
29.7
0.033
-
27.6
0.831
-
179.4
14.2
1.20
1.0
0.658
-
173.8
3.1
1.43
56.6
-
29.8
0.032
-
31.5
0.835
-
179.9
12.8
1.37
1.1
0.663
-
175.0
2.1
1.27
53.3
-
30.0
0.031
-
35.3
0.840
179.6
11.7
1.54
1.2
0.668
-
175.8
1.1
1.14
49.9
-
30.2
0.031
-
39.1
0.843
179.2
10.7
1.75
1.3
0.668
-
176.8
0.4
1.04
46.6
-
30.3
0.030
-
42.1
0.846
178.7
9.8
1.93
1.4
0.668
-
177.6
-
0.4
0.96
43.7
-
30.6
0.030
-
45.4
0.851
178.2
9.1
2.14
1.5
0.672
-
178.5
-
1.1
0.88
40.6
-
30.7
0.029
-
49.0
0.853
177.7
8.2
2.38
1.6
0.674
-
179.2
-
1.8
0.81
37.5
-
31.0
0.028
-
51.8
0.857
177.4
7.6
2.61
1.7
0.673
-
180.0
-
2.5
0.75
34.6
-
31.1
0.028
-
55.3
0.859
176.6
6.8
2.87
1.8
0.675
179.2
-
3.2
0.69
31.7
-
31.3
0.027
-
58.6
0.862
176.1
6.1
3.20
1.9
0.677
178.5
-
3.8
0.65
28.9
-
31.6
0.026
-
61.5
0.864
175.5
5.5
3.51
2.0
0.677
177.8
-
4.4
0.61
26.4
-
31.7
0.026
-
64.6
0.867
174.9
5.0
3.76
2.1
0.677
177.0
-
4.9
0.57
24.0
-
31.9
0.025
-
68.3
0.869
174.2
4.4
4.12
2.2
0.677
176.2
-
5.4
0.54
21.2
-
32.2
0.025
-
71.4
0.869
173.6
3.8
4.57
2.3
0.681
175.4
-
6.0
0.50
19.2
-
32.2
0.025
-
75.1
0.863
172.6
3.0
5.14
2.4
0.677
174.7
-
6.5
0.48
16.6
-
32.5
0.024
-
78.2
0.873
172.4
2.8
5.35
2.5
0.675
174.6
-
6.9
0.45
13.9
-
32.7
0.023
-
82.0
0.874
171.7
2.2
5.82
2.6
0.674
173.8
-
7.4
0.43
11.7
-
32.8
0.023
-
85.1
0.874
170.9
1.7
6.29
2.7
0.673
173.2
-
7.9
0.40
9.5
-
33.0
0.022
-
89.7
0.873
170.1
1.2
6.90
2.8
0.670
172.3
-
8.3
0.39
7.8
-
33.2
0.022
-
92.3
0.875
169.4
0.8
7.45
2.9
0.667
171.4
-
8.7
0.37
5.7
-
33.4
0.021
-
96.7
0.874
168.7
0.3
8.10
3.0
0.665
170.7
-
9.1
0.35
3.5
-
33.4
0.021
-
101.5
0.873
167.9
-
0.2
8.64
3.1
0.662
169.9
-
9.5
0.33
1.4
-
33.7
0.021
-
106.4
0.873
167.2
-
0.8
9.63
3.2
0.648
168.9
-
9.8
0.32
-
0.1
-
34.1
0.020
-
111.8
0.879
166.8
-
1.0
10.28
3.3
0.656
168.6
-
10.4
0.30
-
1.4
-
34.6
0.019
-
117.6
0.872
165.7
-
1.7
12.13
3.4
0.652
167.6
-
10.6
0.29
-
2.8
-
35.3
0.017
-
122.0
0.871
164.9
-
2.1
13.80
3.5
0.651
167.1
-
11.0
0.28
-
4.5
-
35.6
0.017
-
123.8
0.871
164.1
-
2.4
14.87
3.6
0.648
166.2
-
11.3
0.27
-
6.6
-
35.6
0.017
-
126.7
0.870
163.1
-
2.8
15.51
3.7
0.644
165.4
-
11.6
0.26
-
7.9
-
35.7
0.016
-
130.5
0.869
162.3
-
3.2
16.66
3.8
0.641
164.7
-
12.0
0.25
-
10.1
-
36.0
0.016
-
135.9
0.868
161.4
-
3.7
18.41
3.9
0.636
163.8
-
12.3
0.24
-
11.5
-
36.1
0.016
-
140.3
0.867
160.4
-
4.0
19.61
4.0
0.633
163.0
-
12.6
0.23
-
12.5
-
36.2
0.015
-
144.7
0.865
159.4
-
4.4
21.02
Note When K
1, the MAG (Maximum Available Gain) is used.
MAG =
When K
<
1, the MSG (Maximum Stable Gain) is used.
MSG =
, K =
,
= S
11
S
22
-
S
21
S
12
LARGE SIGNAL IMPEDANCE (V
DS
= 3.0 V, I
DS
= 300 mA, f = 460 MHz)
f (MHz)
Z
in
(
)
Z
OL
(
)
Note
460
7.47 +j18.24
4.82 +j5.04
Note Z
OL
is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency.
S
21
S
12
(K
(K
2
1) )
S
21
S
12
1+
2
-
S
11
2
-
S
22
2
Data Sheet PU10125EJ01V1DS
5
NE552R679A
EVALUATION BOARD for 460 MHz
V
GS
V
DS
C1
C7
C8
C3
C4
C9
R1
C5
C6
L1
C6
C7 C8 C9
C2
Unit : mm
30.0
48.0
Symbol
Value
Comment
C1
9.1 pF
C2
12 pF
C3
20 pF
C4
3.3 pF
C5
13 pF
C6
22 pF
C7
1 000 pF
C8
0.33
F
C9
3.3
F - 16V
R1
1 000
L1
22 nH
Circuit Board
t = 0.4 mm,
r = 4.5
R4775
Data Sheet PU10125EJ01V1DS
6
NE552R679A
PACKAGE DIMENSIONS
79A (UNIT: mm)
0.90.2
0.20.1
(Bottom View)
3.60.2
1.50.2
1.2 MAX.
0.8 MAX.
1.0 MAX.
Source
Gate
Drain
0.40.15
5.7 MAX.
5.7 MAX.
0.60.15
0.80.15
4.4 MAX.
4.2 MAX.
Source
Gate
Drain
AU
0X001
79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)
1.7
4.0
0.5
1.0
5.9
1.2
Gate
Source
Drain
0.5
6.1
0.5
Through Hole: 0.2 33
Stop up the hole with a rosin or
something to avoid solder flow.
Data Sheet PU10125EJ01V1DS
7
NE552R679A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
: 260
C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220
C or higher
: 60 seconds or less
Preheating time at 120 to 180
C
: 120
30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature)
: 215
C or below
Time at temperature of 200
C or higher
: 25 to 40 seconds
Preheating time at 120 to 150
C
: 30 to 60 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature)
: 260
C or below
Time at peak temperature
: 10 seconds or less
Preheating temperature (package surface temperature) : 120
C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
: 350
C or below
Soldering time (per pin of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PU10125EJ01V1DS
8
NE552R679A
M8E 00. 4 - 0110
The information in this document is current as of March, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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(Note)
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and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
NE552R679A
NEC Compound Semiconductor Devices Hong Kong Limited
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TEL: +1-408-988-3500 FAX: +1-408-988-0279
0110
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Business issue
NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/
Sales Engineering Group, Sales Division
E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918
Technical issue
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