ChipFind - документация

Электронный компонент: NE651R479A

Скачать:  PDF   ZIP

Document Outline

DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13670EJ2V0DS00 (2nd edition)
Date Published June 2000 NS CP(K)
Printed in Japan
1998, 2000
N-CHANNEL GaAs HJ-FET
NE651R479A
0.4 W L-BAND POWER GaAs HJ-FET
The mark
shows major revised points.
DESCRIPTION
The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile
communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear
gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A.
Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.
FEATURES
GaAs HJ-FET structure
High output power
: P
out
= +27.0 dBm TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 900 MHz, P
in
= +13 dBm
P
out
= +27.0 dBm TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= +15 dBm
P
out
= +29.5 dBm TYP. @ V
DS
= 5.0 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= +15 dBm
High linear gain
: G
L
= 14.0 dB TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 900 MHz, P
in
= 0 dBm
G
L
= 12.0 dB TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= 0 dBm
G
L
= 12.0 dB TYP. @ V
DS
= 5.0 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= 0 dBm
High power added efficiency : 60 % TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 900 MHz, P
in
= +13 dBm
60 % TYP. @ V
DS
= 3.5 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= +15 dBm
58 % TYP. @ V
DS
= 5.0 V, I
Dset
= 50 mA, f = 1.9 GHz, P
in
= +15 dBm
ORDERING INFORMATION
Part Number
Package
Supplying Form
NE651R479A-T1
79A
12 mm wide embossed taping
Qty 1 kpcs/reel
Remark To order evaluation samples, consult your NEC sales representative
(Part number for sample order: NE651R479A).
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
Data Sheet P13670EJ2V0DS00
2
NE651R479A
ABSOLUTE MAXIMUM RATINGS (T
A
= +25



C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
8
V
Gate to Source Voltage
V
GSO
-
4
V
Drain Current
I
D
1.0
A
Gate Forward Current
I
GF
10
mA
Gate Reverse Current
I
GR
10
mA
Total Power Dissipation
P
tot
2.5
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
-
65 to +150
C
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
-
3.5
5.5
V
Gain Compression
Gcomp
-
-
5.0
Note
dB
Channel Temperature
T
ch
-
-
+110
C
Note Recommended maximum Gain Compression is 3.0 dB at V
DS
>
4.2 V
ELECTRICAL CHARACTERISTICS
(T
A
= +25
C, unless otherwise specified, using NEC standard test fixture.)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Saturated Drain Current
I
DSS
V
DS
= 2.5 V, V
GS
= 0 V
-
0.7
-
A
Pinch-off Voltage
V
p
V
DS
= 2.5 V, I
D
= 14 mA
-
2.0
-
-
0.4
V
Gate to Drain Break Down Voltage
BV
gd
I
gd
= 14 mA
12
-
-
V
Thermal Resistance
R
th
Channel to Case
-
30
50
C/W
Output Power
P
out
f = 1.9 GHz, V
DS
= 3.5 V,
26.0
27.0
-
dBm
Drain Current
I
D
P
in
= +15 dBm, R
g
= 1 k
,
-
220
-
mA
Power Added Efficiency
add
I
Dset
= 50 mA (RF OFF)
52
60
-
%
Linear Gain
Note 1
G
L
Note 2
-
12.0
-
dB
Notes 1. P
in
= 0 dBm
2. DC performance is 100 % testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
Data Sheet P13670EJ2V0DS00
3
NE651R479A
TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED)
(T
A
= +25
C, unless otherwise specified, using NEC standard test fixture.)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Output Power
P
out
f = 900 MHz, V
DS
= 3.5 V,
-
27.0
-
dBm
Drain Current
I
D
P
in
= +13 dBm, R
g
= 1 k
,
-
230
-
mA
Power Added Efficiency
add
I
Dset
= 50 mA (RF OFF)
-
60
-
%
Linear Gain
Note
G
L
-
14.0
-
dB
Note P
in
= 0 dBm
TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED)
(T
A
= +25
C, unless otherwise specified, using NEC standard test fixture.)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Output Power
P
out
f = 1.9 GHz, V
DS
= 5.0 V,
-
29.5
-
dBm
Drain Current
I
D
P
in
= +15 dBm, R
g
= 1 k
,
-
350
-
mA
Power Added Efficiency
add
I
Dset
= 50 mA (RF OFF)
-
58
-
%
Linear Gain
Note
G
L
-
12.0
-
dB
Note P
in
= 0 dBm
TYPICAL CHARACTERISTICS (T
A
= +25



C)
I
D
P
out
V
DS
= 3.5 V
I
Dset
= 50 mA (RF OFF)
R
g
= 1 k
, f = 1.9 GHz
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
Output Power P
out
(dBm)
Drain Current I
D
(mA)
Input Power P
in
(dBm)
30
25
20
15
10
5
500
400
300
200
100
0
25
20
15
10
5
0
5
Remark The graph indicates nominal characteristics.
Data Sheet P13670EJ2V0DS00
4
NE651R479A
S-PARAMETERS
Test Conditions: V
DS
= 3.5 V, I
Dset
= 50 mA (RF OFF)
Frequency
S
11
S
21
S
12
S
22
GHz
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
0.868
0.866
0.864
0.863
0.868
0.862
0.860
0.861
0.859
0.861
0.862
0.857
0.855
0.856
0.860
0.860
0.863
-
168.8
-
172.7
-
176.9
-
179.4
176.6
173.6
170.8
168.3
165.4
162.2
159.3
156.7
153.5
150.0
146.7
142.9
140.1
6.120
5.225
4.641
4.145
3.730
3.359
3.152
2.894
2.695
2.527
2.387
2.261
2.229
2.093
1.946
1.884
1.785
96.9
95.0
93.0
91.6
89.4
88.3
87.5
85.8
85.2
84.2
82.9
82.8
80.9
77.8
76.9
75.5
73.6
0.046
0.046
0.045
0.045
0.045
0.045
0.046
0.047
0.047
0.046
0.046
0.047
0.046
0.046
0.045
0.045
0.045
15.7
14.9
14.8
15.4
15.8
16.6
16.6
15.7
15.5
16.1
17.0
17.1
17.0
16.6
16.3
16.9
18.4
0.536
0.537
0.541
0.540
0.541
0.542
0.542
0.535
0.533
0.533
0.533
0.532
0.537
0.538
0.537
0.533
0.533
-
170.3
-
173.9
-
177.1
-
179.6
178.0
175.5
173.4
171.9
170.1
167.8
165.9
163.8
161.1
158.4
156.0
154.0
149.6
Data Sheet P13670EJ2V0DS00
5
NE651R479A
APPLICATION CIRCUIT EXAMPLE
f = 1.9 GHz (Unit: mm)
R
g
1 000 p
V
GS
V
DS
INPUT
OUTPUT
C1
2
6
3
5
43
12
3
50
LINE
C2
3
5
2
2
2
8
1 2
7
5
6
Tantalum Condenser
47 F
Tantalum Condenser
100 F
/4 OPEN STUB
/4 LINE
/4 OPEN STUB
GND
f = 1.9 GH
Z
V
DS
= 3.5 V
I
Dset
= 50 mA (RF OFF)
Substrate: Teflon glass ( r = 2.6)
t = 0.8 mm
C1 = 30 pF
R
g
= 1 k
C2 = 30 pF
APPLICATION CIRCUIT EXAMPLE
f = 900 MHz (Unit: mm)
GND
f = 900 MH
Z
V
DS
= 3.5 V
I
Dset
= 50 mA (RF OFF)
Substrate: Teflon glass ( r = 2.6)
t = 0.8 mm
C1 = 30 pF
C5 = 3 pF
R1 = 5.1
C2 = 30 pF
C6 = 6 pF
R2 = 30
C3 = 1 000 pF
C7 = 1 pF
R
g
= 1 k
C4 = 6 pF
INPUT
OUTPUT
C1
9
2
50
LINE
5
3
2
2
C5
R2
C3
9
C2
C7
4
4
3
10
13
5
9
4
2
3
4
C4
3
R1
4
3
C6
5
R
g
1 000 p
V
GS
V
DS
Tantalum Condenser
47 F
Tantalum Condenser
100 F
/4 OPEN STUB
/4 LINE
/4 OPEN STUB