NE662M04
NPN SILICON HIGH
FREQUENCY TRANSISTOR
M04
HIGH GAIN BANDWIDTH: f
T
= 25 GHz
LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of just 0.59 mm
Flat Lead Style for better RF performance
FEATURES
DESCRIPTION
The NE662M04 is fabricated using NEC's UHS0 25 GHz f
T
wafer process. With a typical transition frequency of 25 GHz
the NE662M04 is usable in applications from 100 MHz to 10
GHz. The NE662M04 provides excellent low voltage/low cur-
rent performance.
NEC's new low profile/flat lead style "M04" package is ideal for
today's portable wireless applications. The NE662M04 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
PART NUMBER
NE662M04
EIAJ
1
REGISTERED NUMBER
2SC5508
PACKAGE OUTLINE
M04
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
nA
200
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
nA
200
h
FE
Forward Current Gain
2
at V
CE
= 2 V, I
C
= 5 mA
50
70
100
f
T
Gain Bandwidth at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
GHz
20
25
MAG
Maximum Available Power Gain
4
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
dB
20
MSG
Maximum Stable Gain
5
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
dB
20
|S
21E
|
2
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
dB
14
17
NF
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
IN
= Z
OPT
dB
1.1
1.5
P
1dB
Output Power at 1 dB compression point at
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
dBm
11
IP
3
Third Order Intercept Point at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
22
Cre
Feedback Capacitance
3
at V
CB
= 2 V, I
C
= 0, f = 1 MHz
pF
0.18
0.24
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
DC
RF
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
350
s, duty cycle
2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MAG =
5. MSG =
S
21
S
12
S
21
S
12
(
K-
)
(K
2
-1)
California Eastern Laboratories
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
15
V
CEO
Collector to Emitter Voltage
V
3.3
V
EBO
Emitter to Base Voltage
V
1.5
I
C
Collector Current
mA
35
P
T
Total Power Dissipation
mW
115
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
NE662M04
V
CE
= 2 V, l
C
= 5 mA, f= 1 GHz
1.0
0.5
0.2
0
-0.2
-0.5
-1.0
-2.0
-5.0
5.0
2.0
0
3.0 dB
2.0 dB
1.5 dB
NF
MIN
= 1.0 dB
OPT
V
CE
= 2 V, l
C
= 5 mA, f = 2 GHz
1.0
0.5
0.2
0
-0.2
-0.5
-1.0
-2.0
-5.0
5.0
2.0
0
3.0 dB
2.0 dB
1.5 dB
NF
MIN
= 1.1 dB
OPT
TYPICAL OPTIMAL NOISE MATCHING
(T
A
= 25C)
FREQ.
NF
MIN
G
A
OPT
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
TYPICAL NOISE PARAMETERS
(T
A
= 25C)
0.8
0.78
21.4
0.26
31.7
0.17
0.9
0.80
20.7
0.26
32.7
0.17
1.0
0.82
20.0
0.26
34.7
0.17
1.5
0.93
17.0
0.23
57.0
0.16
1.8
1.00
15.6
0.20
78.0
0.14
1.9
1.02
15.2
0.19
86.0
0.14
2.0
1.04
14.8
0.19
94.2
0.13
2.5
1.15
13.5
0.20
138.3
0.10
V
C =
2
V
,
I
C =
5 mA
V
C =
2
V
,
I
C =
3 mA
V
C =
2
V
,
I
C =
10 mA
0.8
0.93
22.5
0.12
28.1
0.15
0.9
0.94
21.8
0.12
28.8
0.15
1.0
0.96
21.1
0.12
31.7
0.15
1.5
1.03
18.1
0.09
71.1
0.14
1.8
1.07
18.7
0.08
106.2
0.13
1.9
1.09
16.3
0.08
118.5
0.13
2.0
1.10
15.9
0.08
130.5
0.12
2.5
1.17
14.3
0.14
-179.7
0.11
0.8
1.28
23.7
0.07
-159.4
0.13
0.9
1.29
23.0
0.07
-157.5
0.13
1.0
1.30
22.3
0.08
-155.7
0.13
1.5
1.37
19.3
0.13
-149.2
0.13
1.8
1.41
17.8
0.18
-146.1
0.13
1.9
1.43
17.3
0.17
-146.0
0.13
2.0
1.44
16.9
0.19
-143.9
0.13
2.5
1.51
15.3
0.25
-136.7
0.13
V
C =
2
V
,
I
C =
20 mA
0.8
1.59
24.5
0.28
-158.1
0.12
0.9
1.61
23.7
0.28
-155.5
0.13
1.0
1.63
23.0
0.27
-153.1
0.13
1.5
1.72
19.9
0.30
-142.6
0.14
1.8
1.78
18.3
0.33
-137.3
0.15
1.9
1.79
17.9
0.34
-135.7
0.08
2.0
1.81
17.5
0.35
-134.1
0.16
2.5
1.90
15.8
0.40
-126.5
0.18
THERMAL RESISTANCE
ITEM
SYMBOL
VALUE
UNIT
Junction to Case Resistance
R
th j-c
150
C/W
Junction to Ambient Resistance
R
th j-a
650
C/W
NE662M04
Frequency, f (GHz)
Frequency, f (GHz)
Noise Figure, NF (dB)
Noise Figure, NF (dB)
NOISE FIGURE AND ASSOCIATED
GAIN vs. FREQUENCY
2 3 4 5 6 7 8 9 10 12
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
18
16
14
12
10
8
6
4
2
G
A
NF
V
CE
= 2V, l
C
= 5 mA
2
3
4
5
6
7
8 9 10 12
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
18
16
14
12
10
8
6
4
G
A
NF
V
C
= 2V, l
C
= 10 mA
Associated Gain, G
A
(dB)
Associated Gain, G
A
(dB)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
Noise Figure, NF (dB)
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
Collector Current, I
C
(mA)
Collector Current, l
C
(mA)
Noise Figure, NF (dB)
Noise Figure, NF (dB)
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
1
10
100
6.00
5.00
4.00
3.00
2.00
1.00
0.00
30.0
25.0
20.0
15.0
10.0
5.0
0.0
G
A
NF
f = 2.5 GHz, V
CE
= 2 V
1
10
100
6.00
5.00
4.00
3.00
2.00
1.00
0.00
30.0
25.0
20.0
15.0
10.0
5.0
0.0
G
A
NF
f = 1.5 GHz, V
CE
= 2 V
1
10
100
6.00
5.00
4.00
3.00
2.00
1.00
0.00
30.0
25.0
20.0
15.0
10.0
5.0
0.0
G
A
NF
f = 2.0 GHz, V
CE
= 2 V
1
10
100
6.00
5.00
4.00
3.00
2.00
1.00
0.00
30.0
25.0
20.0
15.0
10.0
5.0
0.0
G
A
NF
f = 1.0 GHz, V
CE
= 2 V
NOISE FIGURE AND ASSOCIATED
GAIN vs. FREQUENCY
Associated Gain, G
A
(dB)
Associated Gain, G
A
(dB)
Associated Gain, G
A
(dB)
Associated Gain, G
A
(dB)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
NE662M04
Base to Emitter Voltage, V
BE
(V)
Collector Current, Ic (mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Ambient Temperature, T
A
(
C)
Total Power Dissipation, P
T
(mW)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
150
100
50
250
0
1
25
75
100
125
150
50
Free Air
Mounted on a Ceramic Substrate
Infinite Heatsink
40
30
20
10
50
0
200
600
800
1000
1200
400
V
CE
= 2 V
Collector Current, I
C
(mA)
Collector Current, l
C
(mA)
DC Current Gain, hFE
Gain Bandwdth, f
T
(GHz)
GAIN BANDWIDTH vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
20
15
10
5
25
0
1
5
20
25
30
35
10
V
CE
= 2 V
V
CE
= 1 V
.1 1 2
3
5
7
10 20
30
50
40
30
20
60
70
80
90
100
110
120
V
CE
= 2 V
Collector to Emitter Voltage, V
CE
(V)
Collector Current, Ic (mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
20
0
10
0
1.0
2.0
3.0
3.5
355
A
305
A
255
A
205
A
155
A
105
A
55
A
IB = 5
A
Collector to Emitter Voltage, V
CE
(V)
Feedback Capacitance, C
RE
(pF)
FEEDBACK CAPACITANCE vs.
COLLECTOR TO EMITTER VOLTAGE
0.40
0.30
0.20
0.10
0.50
0
1.0
3.0
4.0
5.0
2.0
Freq. = 1 MHz
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
NE662M04
Collector Current, I
C
(mA)
Maximum Stable Gain, MSG (dB)
Insertion Power Gain, IS
21
I
2
Maximum Available Gain, MAG (dB)
MAXIMUM STABLE GAIN, INSERTION
POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. COLLECTOR CURRENT
1
10
100
30.00
25.00
20.00
15.00
10.00
5.00
0.00
MSG
MAG
f = 2 GHz, V
CE
= 2 V
IS
21
I
2
Collector Current, I
C
(mA)
Maximum Stable Gain, MSG (dB)
Insertion Power Gain, IS
21
I
2
Maximum Available Gain, MAG (dB)
MAXIMUM STABLE GAIN, INSERTION
POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. COLLECTOR CURRENT
1
10
100
30.00
25.00
20.00
15.00
10.00
5.00
0.00
f = 1 GHz, V
CE
= 2 V
IS
21
I
2
MAG
MSG
Frequency, f (GHz)
Forward Insertion Gain, IS
21
I
2
(dB)
FORWARD INSERTION GAIN
vs. FREQUENCY
20
10
30
0
0.1
12
10
2
1
V
CE
= 2 V,
I
C
= 20 mA
V
CE
= 2 V,
I
C
= 5 mA
Frequency, f (GHz)
Forward Insertion Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
FORWARD INSERTION GAIN AND
MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
30
20
10
40
0
0.1
10
2
1
V
CE
= 2 V, I
C
= 20 mA
MAG
MSG
IS
21
I
2
FORWARD INSERTION GAIN AND
MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
Frequency, f (GHz)
Forward Insertion Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
30
20
10
40
0
0.1
10
2
1
V
CE
= 2 V, I
C
= 5 mA
MAG
MSG
IS
21
I
2
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