NE680M03
NPN SILICON TRANSISTOR
NEW M03 PACKAGE:
Smallest transistor outline package available
Low profile/0.59 mm package height
Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 8 GHz
LOW NOISE FIGURE:
NF = 1.9 dB at 2 GHz
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M03
PRELIMINARY DATA SHEET
PART NUMBER
NE680M03
EIAJ
1
REGISTERED NUMBER
2SC5434
PACKAGE OUTLINE
M03
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
f
T
Gain Bandwidth at V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
GHz
5.5
8.0
NF
Noise Figure at V
CE
= 3 V, I
C
= 6 mA, f = 2 GHz
dB
1.9
3.2
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
dB
5.5
7.5
h
FE2
Forward Current Gain at V
CE
= 3 V, I
C
= 5 mA
80
145
I
CBO
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
A
1.0
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
A
1.0
C
RE3
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
pF
0.3
0.7
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
TH
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
350
s, duty cycle
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
DESCRIPTION
The NE680M03 transistor is designed for low noise, high gain,
and low cost applications. This high f
T
part is ideal for low
voltage/low current applications. NEC's new low profile/flat
lead style "M03" package is ideal for today's portable wireless
applications. The NE680 is also available in chip, Micro-x, and
six different low cost plastic surface mount package styles.
1
3
2
1.2
0.05
0.8
0.1
+0.1
-0.05
0.15
1.4
0.1
(0.9)
0.59
0.05
0.2
0.1
0.45
0.45
0.3
0.1
California Eastern Laboratories
Note:
1. This dimension was changed
effective 04/2000 from 1.4 mm
to 1.2 mm. Products with "04" or
a higher number indicated for
month of manufacture in lot
numbers have the new dimension.
0 6 xxxxxxx
Month of manufacture
(Example: Jan. = 1, Feb. = 2, etc.
Oct. = X, Nov. = Y, Dec. = Z)
In-company control code
Year of manufacture
(Last digit of year, 2000 = 0)
Example of Lot No. Identification
NE680M03
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
20
V
CEO
Collector to Emitter Voltage
V
10
V
EBO
Emitter to Base Voltage
V
1.5
I
C
Collector Current
mA
35
P
T
Total Power Dissipation
mW
125
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
Collector Current, I
C
(mA)
DC Forward Current Gain, h
FE
FORWARD CURRENT GAIN
vs. COLECTOR CURRENT
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
15
5
25
0
2
4
8
10
6
V
CE
= 6 V
500
300
200
100
70
50
30
20
10
1 2 3 5 7 10 20 30 50
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
Internet: http://WWW.CEL.COM
06/10/2002
DATA SUBJECT TO CHANGE WITHOUT NOTICE
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected
to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify
CEL for all damages resulting from such improper use or sale.
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