NE685M03
NPN SILICON TRANSISTOR
NEW M03 PACKAGE:
Smallest transistor outline package available
Low profile/0.59 mm package height
Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 12 GHz
LOW NOISE FIGURE:
NF = 1.5 dB at 2 GHz
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M03
PRELIMINARY DATA SHEET
PART NUMBER
NE685M03
EIAJ
1
REGISTERED NUMBER
2SC5435
PACKAGE OUTLINE
M03
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
f
T
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
GHz
12
NF
Noise Figure at V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
dB
1.5
2.5
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
dB
7
9
h
FE2
Forward Current Gain at V
CE
= 3 V, I
C
= 10 mA
75
140
I
CBO
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
A
0.1
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
A
0.1
C
RE3
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
pF
0.4
0.7
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
1
3
2
1.20.05
0.80.1
+0.1
-0.05
0.15
1.4 0.1
(0.9)
0.590.05
0.20.1
0.45
0.45
0.30.1
TK
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
350
s, duty cycle
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
DESCRIPTION
The NE685M03 transistor is designed for low noise, high gain,
and low cost requirements. This high f
T
part is well suited for
very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M03" package is ideal for today's
portable wireless applications. The NE685 is also available in
six different low cost plastic surface mount package styles.
California Eastern Laboratories
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
9
V
CEO
Collector to Emitter Voltage
V
5
V
EBO
Emitter to Base Voltage
V
2
I
C
Collector Current
mA
30
P
T
Total Power Dissipation
mW
125
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Collector Current, I
C
(mA)
DC Forward Current Gain, h
FE
D.C. FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
18
14
6
2
22
26
30
10
0
1.0
2.0
4.0
5.0
6.0
3.0
140
130
110
100
150
120
0
6
18
24
30
12
NE685M03
NE685M03
Parameter
Units
time
seconds
capacitance
farads
inductance
henries
resistance
ohms
voltage
volts
current
amps
Parameters
68533
C
CB
0.13e-12
C
CE
0.14e-12
L
B
0.3e-9
L
E
0.8e-9
C
CBPKG
0.08e-12
C
CEPKG
0.08e-12
L
BX
0.12e-9
L
CX
0.10e-9
L
EX
0.12e-9
ADDITIONAL PARAMETERS
UNITS
(1) Gummel-Poon Model
Parameters
Q1
Parameters
Q1
IS
8.98e-17
MJC
0.19
BF
107.1
XCJC
0
NF
0.99
CJS
0
VAF
22
VJS
0.75
IKF
0.55
MJS
0
ISE
1e-6
FC
0.5
NE
31.10
TF
4e-12
BR
16.06
XTF
12
NR
0.98
VTF
1
VAR
6
ITF
0.04
IKR
8.02e-3
PTF
120
ISC
0
TR
1e-9
NC
2
EG
1.11
RE
0.6
XTB
0
RB
10
XTI
3
RBM
8.34
KF
0
IRB
0.009
AF
1
RC
5.07
CJE
0.50e-12
VJE
0.95
MJE
0.5
CJC
0.11e-12
VJC
0.56
BJT NONLINEAR MODEL PARAMETERS
(1)
MODEL RANGE
Frequency:
0.1 to 4.0 GHz
Bias:
V
CE
= 0.5 V to 3 V, I
C
= 0.5 mA to 20 mA
Date:
11/98
SCHEMATIC
Base
C
CBPKG
C
CB
C
CE
L
BX
L
B
L
E
L
EX
L
CX
C
CEPKG
Emitter
Collector
Q1
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
Internet: http://WWW.CEL.COM
06/10/2002
DATA SUBJECT TO CHANGE WITHOUT NOTICE
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected
to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify
CEL for all damages resulting from such improper use or sale.
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