ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
PART NUMBER
NE68939
PACKAGE CODE
39
SYMBOLS
PARAMETERS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current, V
CB
= 5 V, I
E
= 0
A
2.5
I
EBO
Emitter Cutoff Current, V
EB
= 1 V, I
C
= 0
A
2.5
h
FE
DC Current Gain, V
CE
= 3.6 V, I
C
= 100 mA
30
P
-1
Output Power
dBm
24.5
G
p
Power Gain
dB
6.5
8
C
Collector Efficiency
%
50
62
T
ON
Maximum Device On Time
M
S
10.0
NPN SILICON EPITAXIAL TRANSISTOR
PRELIMINARY DATA SHEET
California Eastern Laboratories
FEATURES
OUTPUT POWER AT 1dB COMPRESSION POINT:
24.5 dBm TYP @F = 1.9 GH
Z
, V
CE
= 3.6 V, Class AB,
Duty 1/8
4 PIN MINI MOLD PACKAGE: NE68939
NE68939
V
CE
= 3.6 V, f = 1.9 GH
Z
ICq = 2 mA (Class AB)
Duty 1/8
DESCRIPTION
The NE68939 is a low voltage, NPN Silicon Bipolar Transistor
for pulsed power applications. The device is designed to op-
erate from a 3.6 V supply, and deliver over 1/4 watt of power
output at frequencies up to 2.0 GH
Z
with a 1:8 duty cycle.
These characteristics make it an ideal device for TX driver
stage in a 1.9 GH
Z
digital cordless telephone (DECT or PHS).
The part is supplied in a SOT-143 (SC-61) 4-pin Mini-mold
package and is available on tape and reel.
The NE68939 transistors are manufactured to NEC's strin-
gent quality assurance standards to ensure highest reliability
and consistent superior performance.
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 39
2.8
+0.2
-0.3
+0.10
-0.05
(LEADS 2, 3, 4)
0.6
+0.10
-0.05
0.16
+0.10
-0.06
5
5
0.8
1.1
+0.2
-0.1
1
2
3
0 to 0.1
4
0.4
2.9
0.2
0.95
0.85
1.9
1.5
+0.2
-0.1
1) Collector
2) Emitter
3) Base
4) Emitter
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
9.0
V
CEO
Collector to Emitter Voltage
V
6.0
V
EBO
Emitter to Base Voltage
V
2.0
I
C
Collector Current mA
150
P
T
Total Power Dissipation
mW
200 (CW)
T
j
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
4
1.0
3
2.4
2
1.9
1.0
1
PART NUMBER
QTY
NE68939-T1
3K/REEL
Note:
1. Lead material: Cu
Lead plating: PbSn
ORDERING INFORMATION
FREQUENCY
Z
IN
Z
OUT
(GH
Z
)
(
)
(
)
1.9
7.85+j5.62
21.9-j11.6
0.9
3.1+j11.6
5.3-j5.7
IMPEDANCE LOOKING INTO DEVICE
V
CC
= 3.6 V, I
CQ
= I mA, CLASS AB
(2) TX Amplifier for PHS
(1) TX Amplifier for DECT
APPLICATION
+3 dBm
Po = 27 dBm
-14 dBm
P1 = 22 dBm
NE68839
NE68939
NE69039
PC2771T
NE68939
NE69039
Output
Power,
Pout
(
dBm)
Input Power, Pin (dBm)
Collector
Efficency,
C
(%)
Collector
Currents,
I
C
(mA)
Power
Gain,
G
p
(dB)
OUTPUT POWER, COLLECTOR
EFFICIENCY, COLLECTOR CURRENT
AND POWER GAIN VS. INPUT
POWER
f = 1.9 GH
Z
, V
CC
= 3.6V
I
C
= 1mA (Duty 1/8)
30
25
20
15
10
5
5
10
15
20
25
80
60
40
20
0
8
7
6
5
4
30
20
10
0
Pout
C
I
C
G
P
P
1dB
24.5
dbm
C
62
%
I
C
15
mA
G
L
9.0
db
TYPICAL DATA
f = 1.9 GHz, V
CC
= 3.6 V, I
CQ
= 1 mA, DUTY = 1/8
Z
IN
(
), Z
OUT
(
) DATA
j50
j25
j10
0
-j10
-j25
-j50
-j100
j100
0
Z
IN
Z
OUT
Z IN
Z OUT
NE68939
OUTLINE 39
RECOMMENDED P.C.B. LAYOUT
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
07/05/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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