ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
PART NUMBER
NE69039
PACKAGE CODE
39
SYMBOLS
PARAMETERS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current, V
CB
= 5 V, I
E
= 0
A
2.5
I
EBO
Emitter Cutoff Current, V
EB
= 1 V, I
C
= 0
A
2.5
h
FE
DC Current Gain, V
CE
= 3.6 V, I
C
= 100 mA
30
P
-1
Output Power
dBm
27.5
G
P
Power Gain
dB
5.0
6.0
C
Collector Efficiency
%
50
72
T
ON
Maximum Device On Time
M
S
10.0
NPN SILICON EPITAXIAL TRANSISTOR
PRELIMINARY DATA SHEET
California Eastern Laboratories
FEATURES
OUTPUT POWER AT 1dB COMPRESSION POINT:
27.5 dBm TYP @F = 1.9 GH
Z
, V
CE
= 3.6 V, Class AB,
Duty 1/8
4 PIN MINI MOLD PACKAGE: NE69039
NE69039
V
CE
= 3.6 V, f = 1.9 GH
Z
ICq = 1 mA (Class AB)
Duty 1/8
DESCRIPTION
The NE69039 is a low voltage, NPN Silicon Bipolar Transistor
for pulsed power applications. The device is designed to op-
erate from a 3.6 V supply, and deliver over 1/2 watt of power
output at frequencies up to 2.0 GH
Z
with a 1:8 duty cycle. These
characteristics make it an ideal device for TX output stage in a
1.9 GH
Z
digital cordless telephone (DECT or PHS). The part
is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package
and is available on tape and reel.
The NE69039 transistors are manufactured to NEC's stringent
quality assurance standards to ensure highest reliability and
consistent superior performance.
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 39
2.8
+0.2
-0.3
+0.10
-0.05
(LEADS 2, 3, 4)
0.6
+0.10
-0.05
0.16
+0.10
-0.06
5
5
0.8
1.1
+0.2
-0.1
1
2
3
0 to 0.1
4
0.4
2.9
0.2
0.95
0.85
1.9
1.5
+0.2
-0.1
1) Collector
2) Emitter
3) Base
4) Emitter
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
9.0
V
CEO
Collector to Emitter Voltage
V
6.0
V
EBO
Emitter to Base Voltage
V
2.0
I
C
Collector Current
mA
300
P
T
Total Power Dissipation
mW
200 (CW)
T
j
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
PART NUMBER
QTY
NE69039-T1
3K/REEL
Note:
1. Lead material: Cu
Lead plating: PbSn
ORDERING INFORMATION
Z
IN
(
), Z
OUT
(
) DATA
j50
j25
j10
0
-j10
-j25
-j50
-j100
j100
0
Z
IN
Z
OUT
+3 dBm
Po = 27 dBm
-14 dBm
P1 = 22 dBm
NE68839
NE68939
NE69039
PC2771T
NE68939
NE69039
(2) TX Amplifier for PHS
(1) TX Amplifier for DECT
APPLICATION
f = 1.9 GH
Z
, V
CC
= 3.6V
I
C
= 1mA (Duty 1/8)
30
25
20
15
10
5
5
10
15
20
25
80
60
40
20
0
8
7
6
5
4
30
20
10
0
Pout
C
I
C
G
P
Output Power, Pout (dBm)
Input Power, Pin (dBm)
Collector
Efficency,
C
(%)
Collector Currents,
I
C (mA)
Power
Gain,
Gp
(dB)
OUTPUT POWER, COLLECTOR
EFFICIENCY, COLLECTOR CURRENT
AND POWER GAIN VS. INPUT POWER
P
1dB
27.5
dBm
C
72
%
I
C
27
mA
G
L
6.7
db
TYPICAL DATA
f = 1.9 GHz, V
CC
= 3.6 V, I
CQ
= 1 mA, DUTY = 1/8
FREQUENCY
Z
IN
Z
OUT
(GH
Z
)
(
)
(
)
1.9
7.42+j14.2
15.8-j2.64
0.9
4.0+j8.8
4.4-j4.6
IMPEDANCE LOOKING INTO DEVICE
V
CC
= 3.6 V, I
CQ
= 1 mA, CLASS AB
Z
IN
Z
OUT
4
1.0
3
2.4
2
1.9
1.0
1
OUTLINE 39
RECOMMENDED P.C.B. LAYOUT
NE69039
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
07/06/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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