GaAs MES FET
DESCRIPTION
NE76184A is a N-channel GaAs MES FET housed in ce-
ramic package. The device is fabricated by ion implantation for
improved RF and DC performance reliability and uniformity. Its
excellent low noise and high associated gain make it suitable
for DBS, TVRO, GPS and another commercial systems.
FEATURES
Low noise figure & High associated gain
NF = 0.8 dB TYP., G
a
= 12 dB TYP. at f = 4 GHz
ORDERING INFORMATION
PART NUMBER
SUPPLYING
LEAD LENGTH
FORM
NE76184A-SL
STICK
L = 1.7 mm MIN.
NE76184A-T1
Tape & reel
L = 1.0
0.2 mm
NE76184A-T1A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
V
DS
5.0
V
Gate to Source Voltage
V
GSO
5.0
V
Gate to Drain Voltage
V
GDO
6.0
V
Drain Current
I
D
100
mA
Total Power Dissipation
P
tot
300
mW
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Gate to Source Leak Current
I
GSO
10
A
V
GS
= 5 V
Saturated Drain Current
I
DSS
30
100
mA
V
DS
= 3 V, V
GS
= 0
Gate to Source Cutoff Voltage
V
GS (off)
0.5
3.0
V
V
DS
= 3 V, I
D
= 100
A
Transconductance
g
m
20
45
mS
V
DS
= 3 V, I
D
= 10 mA
Noise Figure
NF
0.8
1.4
dB
V
DD
= 3 V
f = 4 GHz
Associated Gain
G
a
12
dB
I
D
= 10 mA
Power Gain
G
s
6
dB
f = 12 GHz
I
DSS
rank is specified as follows. (K: 30 to 100 mA, N: 30 to 65 mA, M: 55 to 100 mA)
Document No. P10852EJ2V0DS00 (2nd edition)
(Previous No. TC-2303)
Data Published October 1995 P
Printed in Japan
NE76184A
PACKAGE DIMENSIONS
(Unit: mm)
1.78 0.2
L
L
1.78 0.2
L
2
4
3
0.5 TYP.
L
0.5 TYP.
J
0.1
1.7 MAX.
1. Source
2. Drain
3. Source
4. Gate
1
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
1991
DATA SHEET
NE76184A
2
TYPICAL CHARACTERISTICS (T
A
= 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - C
0
50
100
150
200
500
400
300
200
100
P
tot
- Total Power Dissipation - mW
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
0
1
3
4
5
2
80
60
20
I
D
- Drain Current - mA
40
V
GS
= 0 V
0.2 V
0.4 V
0.6 V
0.8 V
1.0 V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
2.0
1.0
0
80
60
40
20
0
I
D
- Drain Current - mA
V
DS
= 3 V
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
f - Frequency - GHz
0
2
30
5
4
3
2
1
NF - Noise Figure - dB
4
6
8 10 14
20
16
12
8
4
V
DS
= 3 V
I
D
= 10 mA
NF
Ga
G
a
- Associated Gain - dB
3
NE76184A
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
f - Frequency - GHz
0
1
20
20
16
12
8
4
MSG
- Maximum Stable Gain - dB
MAG - Maximum Available Gain - dB
|S
21s
|
2
- Forward Insertion Gain - dB
2
4
6
8
V
DS
= 3 V
I
D
= 10 mA
10 12
MSG
|S
21s
|
2
MAG
NOISE FIGURE, ASSOCIATED GAIN vs.
RATIO OF DRAIN CURRENT AND
ZERO-GATE VOLTAGE CURRENT
I
DS
/I
DSS
- Ratio of Drain Current and Zero-Gate
Voltage Current - %
2
3.0
2.5
2.0
1.5
NF - Noise Figure - dB
10
1.0
0.5
0
1
4
6 8
40
100
20
60 80
V
DS
= 3 V
f = 4 GHz
16
14
12
10
8
6
4
G
a
NF
G
a
- Associated Gain - dB
Gain Calculations
MSG
S
S
K
1
S
S
2 S
S
MSG
S
S
K
K
1
S
S
S
S
21
12
2
11
2
22
2
12
21
21
12
2
11
22
21
12
=
=
+
-
-
=
-
=
-
OUTPUT POWER vs. INPUT POWER
Pin - Input Power - dBm
10
+15
Pout
- Output Power - dBm
V
DS
= 3 V, I
D
= 30 mA
f
in
= 11 GHz
+10
+5
0
5
5
0
+5
+10
NE76184A
4
S-PARAMETERS
V
DS
= 3 V, I
D
= 10 mA
START 500 MHz STOP 12 GHz STEP 500 MHz
0.5
1.0
2.0
1.0
0.5
3
1
0
0.5
1.0
2.0
2
135
180
135
90
45
0
45
90
0
0.1
0.2
0.3
0.4
0.5
1
2
3
S
11
S
12
135
135
90
45
0
45
90
0
0.2
0.3
0.4
1
S
21
180
0.1
0.5
2
3
0.5
1.0
2.0
1.0
0.5
1
0
0.5
1.0
2.0
S
22
2
3
Marker
1. 4 GHz
2. 8 GHz
3. 12 GHz
5
NE76184A
S-PARAMETER
MAG. AND ANG.
V
DS
= 3 V, I
D
= 10 mA
FREQUENCY
S11
S21
S12
S22
MHz
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
500.0000
0.993
14.4
3.919
166.5
0.022
80.3
0.716
9.9
1000.0000
0.971
28.4
3.820
153.5
0.042
71.6
0.702
19.1
1500.0000
0.936
41.9
3.714
140.9
0.061
62.0
0.682
28.2
2000.0000
0.896
54.8
3.562
129.0
0.079
54.1
0.652
36.8
2500.0000
0.850
67.4
3.388
117.8
0.092
46.4
0.623
44.8
3000.0000
0.808
79.4
3.238
107.0
0.103
39.9
0.592
52.6
3500.0000
0.761
91.3
3.069
96.4
0.112
33.5
0.563
60.9
4000.0000
0.720
102.7
2.909
86.4
0.120
27.5
0.533
68.1
4500.0000
0.681
113.9
2.765
77.0
0.125
22.2
0.501
75.7
5000.0000
0.647
124.4
2.623
67.9
0.127
17.6
0.475
83.5
5500.0000
0.615
134.9
2.485
59.1
0.131
13.6
0.454
91.4
6000.0000
0.588
144.8
2.365
50.7
0.131
9.6
0.437
98.9
6500.0000
0.566
154.5
2.252
42.6
0.133
6.5
0.425
107.1
7000.0000
0.547
163.6
2.151
34.7
0.135
3.7
0.418
114.4
7500.0000
0.531
172.4
2.064
27.3
0.136
1.9
0.414
121.8
8000.0000
0.517
178.7
1.985
19.6
0.139
0.8
0.415
129.3
8500.0000
0.503
169.6
1.909
12.2
0.141
3.0
0.418
136.4
9000.0000
0.492
160.5
1.843
5.0
0.143
5.3
0.418
143.7
9500.0000
0.482
151.1
1.783
2.5
0.148
7.3
0.417
151.0
10000.0000
0.475
141.3
1.726
9.6
0.152
9.4
0.419
158.4
10500.0000
0.475
131.5
1.668
17.0
0.156
11.3
0.418
166.4
11000.0000
0.477
121.6
1.613
23.8
0.160
13.8
0.421
174.2
11500.0000
0.481
112.1
1.554
31.0
0.165
16.2
0.431
177.3
12000.0000
0.489
102.7
1.503
38.0
0.170
18.8
0.441
169.6
V
DS
= 3 V, I
D
= 30 mA
FREQUENCY
S11
S21
S12
S22
MHz
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
500.0000
0.990
16.6
5.304
165.1
0.019
79.5
0.617
10.3
1000.0000
0.957
32.6
5.115
150.9
0.037
71.5
0.599
19.9
1500.0000
0.911
47.6
4.866
137.4
0.052
62.3
0.577
28.9
2000.0000
0.860
62.0
4.587
124.8
0.065
55.0
0.545
37.4
2500.0000
0.805
75.5
4.282
113.3
0.075
48.7
0.515
44.9
3000.0000
0.755
88.4
4.009
102.5
0.085
42.9
0.485
52.1
3500.0000
0.707
100.7
3.741
92.1
0.092
38.2
0.456
59.4
4000.0000
0.663
112.5
3.493
82.3
0.097
33.6
0.431
66.6
4500.0000
0.626
124.0
3.275
73.3
0.103
30.2
0.404
73.7
5000.0000
0.594
134.8
3.078
64.5
0.107
26.7
0.382
81.2
5500.0000
0.566
145.4
2.888
56.2
0.110
23.3
0.365
88.5
6000.0000
0.546
155.4
2.729
48.2
0.114
21.3
0.351
96.3
6500.0000
0.528
165.1
2.581
40.6
0.118
18.6
0.343
104.1
7000.0000
0.513
174.3
2.455
33.0
0.122
17.1
0.339
111.7
7500.0000
0.501
176.9
2.344
25.8
0.128
14.8
0.340
119.3
8000.0000
0.490
167.9
2.242
18.5
0.133
13.1
0.343
126.8
8500.0000
0.480
158.9
2.151
11.3
0.139
10.6
0.350
133.8
9000.0000
0.472
149.8
2.069
4.2
0.147
7.6
0.350
141.3
9500.0000
0.466
140.6
1.997
2.7
0.153
5.5
0.352
148.9
10000.0000
0.465
130.8
1.924
9.7
0.161
2.2
0.355
156.2
10500.0000
0.468
121.2
1.855
16.8
0.168
0.6
0.357
165.0
11000.0000
0.476
112.0
1.791
23.4
0.175
4.6
0.363
173.1
11500.0000
0.483
102.7
1.727
30.4
0.182
7.6
0.373
178.2
12000.0000
0.494
93.9
1.665
37.2
0.189
10.6
0.385
169.9
NE76184A
6
AMP PARAMETERS
V
DS
= 3 V, I
D
= 10 mA
FREQUENCY
GU
max.
GA
max.
|S
21
|
2
|S
12
|
2
K
Delay
Mason's U
G
1
G
2
MHz
dB
dB
dB
dB
ns
dB
dB
dB
500.0000
33.77
11.86
33.16
0.07
0.072
49.375
18.78
3.13
1000.0000
27.00
11.64
27.43
0.14
0.072
12.40
2.95
1500.0000
23.21
11.40
24.28
0.23
0.070
29.663
9.10
2.72
2000.0000
20.48
11.03
22.09
0.30
0.066
28.208
7.04
2.41
2500.0000
18.30
10.60
20.74
0.37
0.062
25.690
5.57
2.14
3000.0000
16.68
10.21
19.78
0.43
0.060
25.762
4.60
1.88
3500.0000
15.16
9.74
18.99
0.50
0.059
24.501
3.76
1.66
4000.0000
13.90
9.28
18.42
0.57
0.056
23.383
3.17
1.45
4500.0000
12.80
8.83
18.06
0.64
0.052
21.885
2.71
1.25
5000.0000
11.84
8.38
17.91
0.72
0.051
20.810
2.35
1.11
5500.0000
10.97
7.91
17.68
0.79
0.049
20.093
2.06
1.00
6000.0000
10.24
7.48
17.62
0.86
0.046
18.766
1.84
0.92
6500.0000
9.59
7.05
17.50
0.92
0.045
18.307
1.67
0.86
7000.0000
9.03
6.65
17.40
0.98
0.044
17.776
1.54
0.84
7500.0000
8.55
10.85
6.29
17.35
1.03
0.041
17.422
1.44
0.82
8000.0000
8.13
10.17
5.95
17.13
1.05
0.042
17.410
1.35
0.82
8500.0000
7.72
9.49
5.62
17.05
1.09
0.041
16.680
1.27
0.83
9000.0000
7.35
8.99
5.31
16.87
1.12
0.040
16.073
1.20
0.84
9500.0000
7.00
8.57
5.02
16.60
1.14
0.042
15.587
1.15
0.83
10000.0000
6.69
8.20
4.74
16.38
1.15
0.040
14.945
1.11
0.84
10500.0000
6.39
7.84
4.44
16.16
1.16
0.041
14.161
1.11
0.83
11000.0000
6.12
7.58
4.16
15.89
1.16
0.038
13.620
1.12
0.85
11500.0000
5.86
7.31
3.83
15.67
1.16
0.040
12.913
1.14
0.89
12000.0000
5.67
7.19
3.54
15.37
1.14
0.039
12.582
1.19
0.94
V
DS
= 3 V, I
D
= 30 mA
FREQUENCY
GU
max.
GA
max.
|S
21
|
2
|S
12
|
2
K
Delay
Mason's U
G
1
G
2
MHz
dB
dB
dB
dB
ns
dB
dB
dB
500.0000
33.74
14.49
34.36
0.09
0.079
38.817
17.17
2.08
1000.0000
26.88
14.18
28.71
0.19
0.079
41.142
10.77
1.93
1500.0000
23.20
13.74
25.66
0.29
0.075
31.251
7.71
1.75
2000.0000
20.60
13.23
23.68
0.38
0.070
29.809
5.84
1.53
2500.0000
18.51
12.63
22.51
0.47
0.064
27.934
4.53
1.34
3000.0000
16.90
12.06
21.42
0.55
0.060
27.066
3.67
1.16
3500.0000
15.48
11.46
20.70
0.63
0.058
26.502
3.00
1.01
4000.0000
14.27
10.86
20.27
0.72
0.054
24.356
2.51
0.89
4500.0000
13.24
10.30
19.73
0.79
0.050
24.031
2.16
0.77
5000.0000
12.34
9.76
19.43
0.87
0.048
22.392
1.89
0.69
5500.0000
11.51
9.21
19.15
0.94
0.047
20.841
1.68
0.62
6000.0000
10.83
8.72
18.90
1.00
0.044
20.194
1.54
0.57
6500.0000
10.19
12.13
8.24
18.55
1.04
0.042
19.396
1.42
0.54
7000.0000
9.66
11.34
7.80
18.25
1.08
0.042
19.008
1.33
0.53
7500.0000
9.16
10.79
7.40
17.85
1.09
0.040
18.783
1.26
0.53
8000.0000
8.75
10.29
7.01
17.50
1.10
0.040
18.372
1.19
0.55
8500.0000
8.35
9.85
6.65
17.17
1.12
0.040
17.707
1.14
0.57
9000.0000
7.98
9.48
6.32
16.68
1.11
0.039
17.361
1.10
0.57
9500.0000
7.65
9.10
6.01
16.32
1.11
0.039
16.512
1.07
0.57
10000.0000
7.33
8.81
5.68
15.87
1.10
0.039
16.047
1.06
0.59
10500.0000
7.03
8.50
5.37
15.51
1.10
0.039
15.174
1.07
0.59
11000.0000
6.79
8.33
5.06
15.16
1.09
0.037
14.844
1.11
0.61
11500.0000
6.55
8.15
4.75
14.80
1.07
0.039
14.143
1.16
0.65
12000.0000
6.34
8.02
4.43
14.48
1.05
0.038
13.483
1.22
0.70
7
NE76184A
NOISE PARAMETERS
<
opt.
vs. frequency>
1.0
0.5
0
0.5
1.0
2.0
2.0
2
4
6
8
1.0
10
12
14
V
DS
= 3 V
I
D
= 10 mA
START 2 GHz, STOP 14 GHz, STEP 2 GHz
<Noise Parameter>
V
DS
= 3 V, I
D
= 10 mA
Freq.
NF
MIN.
G
a
opt.
R
n
/ 50
(GHz)
(dB)
(dB)
MAG.
ANG.(deg.)
2.0
0.65
16.0
0.75
37
0.52
4.0
0.80
12.2
0.66
78
0.42
6.0
1.25
10.3
0.56
124
0.33
8.0
1.75
8.5
0.49
166
0.20
10.0
2.10
7.6
0.47
151
0.28
12.0
2.65
6.5
0.45
112
0.49
14.0
3.20
5.5
0.46
64
0.56
NE76184A
8
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done
under different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL"
(IEI-1207).
Soldering
Soldering conditions
Symbol
process
Infrared ray reflow
Peak package's surface temperature: 230 C or below,
IR30-00
Reflow time: 30 seconds or below (210 C or higher),
Number of reflow process: 1, Exposure limit*: None
Partial heating method
Terminal temperature: 230 C or below,
Flow time: 10 seconds or below,
Exposure limit*: None
* Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 C and relative humidity at 65 % or less.
Note Do not apply more than a single process at once, except for "Partial heating method".
PRECAUTION Avoid high static voltage and electric fields, because this device is MES FET with GaAs shottky
barrier gate.
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the Japanese law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.
9
NE76184A
[MEMO]
NE76184A
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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