1996
PRELIMINARY DATA SHEET
GaAs MES FET
NE85002 SERIES
2 W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
Document No. P10969EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
DESCRIPTION
The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W
partially matched devices. Each packaged device has an input lumped element matching network.
NE8500200 is the six-cells recessed gate chip used in `95' package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
has a PHS. (Plated Heat Sink)
NEC's strigent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
Class A operation
High power output
High reliability
SELECTION CHART
PERFORMANCE SPECIFIED
PART NUMBER
Pout (**)
G
L
(**)
USABLE
(dBm)
(dB)
FREQUENCY
(GHz)
NE8500200(*)
33.8 min
8.0 min
2.0 to 10
NE8500200-WB(*)
NE8500200-RG(*)
NE8500295-4
33.8 min
10.5 min
3.5 to 5.5
NE8500295-6
33.8 min
9.5 min
5.5 to 7.5
NE8500295-8
33.5 min
8.0 min
7.5 to 8.5
*
GB, RG indicate a type of containers for chips.
WB: black carrier, RG: ring,
** Specified at the condition at the last page.
PHYSICAL DIMENSIONS
NE8500200 (CHIP) (unit:
m)
PACKAGE CODE-95 (unit: mm)
640
240
100
110
100
100
90
100
1800
14.0 0.3
7.2 0.2
4.5 MAX.
0.1
5.9 0.2
4.0 MIN.
0.7 0.1
GATE
2.5 0.3 DIA
SOURCE
0.2 MAX.
2.1 0.15
1.0
18.5 MAX.
DRAIN
NE85002 SERIES
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
V
DSX
15
V
Gate to Source Voltage
V
GSX
12
V
Gate to Drain Voltage
V
GDX
18
V
Total Power Disipation(*)
P
T
13
W
Drain Current
I
D
2.5
A
Gate Current
I
G
13
mA
Channel Temperature
T
ch
175
C
Storage Temperature
T
stg
65 to 175
C
*T
C
= 25 C
RECOMMENDING OPERATION RANDGE
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
Drain to Source Voltage
V
DS
9
10
V
Channel Temperature
T
ch
130
C
Input Power
Gcomp
3
dBcomp
Gate Resistance
Rg
2
k
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Saturated Drain Current
Idss
950
1900
mA
Vds = 2.5 V, Vgs = 0 V
Pinch-off Voltage
V
P
3.0
1.0
V
Vds = 2.5 V, Ids = 8 mA
Transconductance
gm
600
mS
Vds = 2.5 V, Ids = Idss
Thermal Resistance
R
th
10
15
C/W
NE85002 SERIES
3
PERFORMANCE SPECIFICATIONS (T
A
= 25 C)
PART NUMBER
PACKAGE CODE
CHARACTERISTIC SYMBOL
Output Power
P
O
Gate to source
Igs
Current
Linear Gain
G
L
*
Test frequencies are: NE8500200 @8.5 GHz, NE8500295-4 @4.2 GHz, NE8500295-6 @6.5 GHz, NE8500295-8 @8.5 GHz
**
Test input power are: NE8500200 @27.0 dBm, NE8500295-4 @24.5 dBm, NE8500295-6 @25.5 dBm, NE8500295-8 @27.0dBm
*** The conditions are the same as the above except this.
TYPICAL PERFORMANCE CURVE (T
A
= 25 C)
POWER DERATING CURVE
P
T
- Total Power-Dissipation - W
0
12
T
C
- Case Temperature - C
OUTPUT POWER vs. INPUT POWER
P
OUT
- Output Power - dBm
0
40
P
IN
- Input Power - dBm
8
4
0
50
100
150
200
30
20
10
0
5
10
15
20
25
30
35
40
6
4
8
NE8500200
NE8500200-WB
NE8500200-RG
CHIP
MIN. TYP. MAX.
33.8
2.4
2.4
8.0
N8500295-4
95
MIN. TYP. MAX.
33.8
2.4
2.4
10.5
NE8500295-6
95
MIN. TYP. MAX.
33.8
2.4
2.4
9.5
NE8500295-8
95
MIN. TYP. MAX.
33.5
2.4
2.4
8.0
UNIT
dBm
dBm
dBm
dBm
mA
A
dB
TEST CONDITIONS
Pin = 18 dBm (***)
Vds = 10 V
Ids = 450 mA set
Rg = 1k
f(*)
pin(**)
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