FEATURES
HIGH OUTPUT POWER: 0.5 W
HIGH LINEAR GAIN: 9.5 dB
HIGH EFFICIENCY (PAE): 38%
SUPERIOR INTERMODULATION DISTORTION
INDUSTRY STANDARD PACKAGING
California Eastern Laboratories
C-BAND MEDIUM POWER GaAs MESFET
DESCRIPTION
The NE850R599A is a medium power GaAs MESFET de-
signed for up to a 1/2W output stage or as a driver for higher
power devices. The device has no internal matching and can
be used at frequencies from UHF to 8.5 GH
Z
. Equivalent
performance in a chip package can be obtained by using only
1 cell of the NE8500100 chip. The chips used in this series
offer superior reliability and consistent performance for which
NEC microwave semiconductors are known.
SYMBOLS
PARAMETERS
UNITS MIN
TYP MAX
V
DS
Drain to Source Voltage
V
9
10
T
CH
Channel Temperature
C
130
G
COMP
Gain Compression
dB
3.0
R
G
Gate Resistance
K
1
RECOMMENDED OPERATING LIMITS
NE850R599A
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C)
PART NUMBER
NE850R599A
PACKAGE OUTLINE
99
SYMBOLS
CHARACTERISTICS
UNITS
MIN
TYP
MAX
TEST CONDITIONS
P
OUT
Power Out at Fixed Input Power
dBm
25.5
26.5
P
IN
= 18.5 dBm
1
ADD
Power Added Efficiency
%
38
V
DS
= 10 V; I
DSQ
= 100 mA
I
DS
Drain Source Current
A
140
f = 7.2 GHz; R
G
= 1 K
I
GS
Gate to Source Current
mA
-1.6
1.6
G
L
Linear Gain
dB
9.5
P
IN
= 7 dBm
2
I
DSS
Saturated Drain Current
mA
220
430
V
DS
= 2.5 V; V
GS
= 0 V
V
P
Pinch-off Voltage
V
-3.0
-1.0
V
DS
= 2.5 V; I
DS
= 2 mA
g
m
Transconductance
mS
150
V
DS
= 2.5 V; I
DS
= I
DSS
R
TH
Thermal Resistance (channel to case)
C/W
60
Functional
Characteristics
Electrical
Characteristic
s
PACKAGE OUTLINE 99
OUTLINE DIMENSIONS
(Units in mm)
4.0 MIN BOTH LEADS
1.0
0.1
2.2
0.2
4.0
0.1
4.3
0.2
5.2
0.3
0.6
0.1
11.0
0.15
15.0
0.3
0.1
0.2 MAX
1.7
0.15
6.0
0.2
1.2
5.0 MAX
5.2
0.3
+.06
-.02
Gate
Drain
Source
NE850R599A
ABSOLUTE MAXIMUM RATINGS
1
(T
C
= 25
C unless otherwise noted)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DSX
Drain to Source Voltage
V
15
V
GDX
Gate to Drain Voltage
V
-18
V
GSX
Gate to Source Voltage
V
-12
I
DS
Drain Current
mA
I
DSS
I
GS
Gate Current
mA
3.0
P
T
Total Power Dissipation
W
3.0
T
CH
Channel Temperature
C
175
T
STG
Storage Temperature
C
-65 to +175
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
TYPICAL PERFORMANCE CURVES
(T
A
= 25C)
OUTPUT POWER vs. INPUT POWER
Output Power, P
OUT
(dBm)
Input Power, P
IN
(dBm)
10
15
20
30
25
20
15
P
OUT
I
D
V
D
= 10 V, f = 7.2 GHz
I
D
= 100 mA set
Rg = 1K
140
120
100
I
D
(mA)
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
01/14/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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