PLEASE NOTE:
PLEASE NOTE:
PLEASE NOTE:
PLEASE NOTE:
PLEASE NOTE:
The following part numbers
The following part numbers
The following part numbers
The following part numbers
The following part numbers
from this datasheet are not
from this datasheet are not
from this datasheet are not
from this datasheet are not
from this datasheet are not
recommended for new design.
recommended for new design.
recommended for new design.
recommended for new design.
recommended for new design.
Please call sales office for
Please call sales office for
Please call sales office for
Please call sales office for
Please call sales office for
details:
details:
details:
details:
details:
NE85635
NE85635
NE85635
NE85635
NE85635
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
NE856
SERIES
FEATURES
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 7 GHz
LOW NOISE FIGURE:
1.1 dB at 1 GHz
HIGH COLLECTOR CURRENT: 100 mA
HIGH RELIABILITY METALLIZATION
LOW COST
Frequency, f (GHz)
Noise Figure, NF (dB)
NE85600
NOISE FIGURE AND GAIN
vs. FREQUENCY
Maximum Associated Gain, Maximum Stable Gain,
Associated Gain, MAG, MSG, G
A
(dB)
DESCRIPTION
NEC's NE856 series of NPN epitaxial silicon transistors is
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain, and high current capability equate to
wide dynamic range and excellent linearity. The NE856 series
offers excellent performance and reliability at low cost. This is
achieved by NEC's titanium/platinum/gold metallization sys-
tem and their direct nitride passivated base surface process.
The NE856 series is available in chip form and a Micro-x
package for high frequency applications. It is also available in
several low cost plastic package styles.
00 (CHIP)
35 (MICRO-X)
32 (TO-92)
34 (SOT 89 STYLE)
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
California Eastern Laboratories
E
B
0.4 0.5 1.0 2 3 4 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
G
A
MSG
MAG
NF
MIN
20
15
10
5
V
CC
= 10 V, I
C
7 mA
NE856 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
PART NUMBER
NE85600
NE85618
NE85619
NE85630
NE85632
EIAJ
1
REGISTERED NUMBER
2SC5011
2SC5006
2SC4226
2SC3355
PACKAGE OUTLINE
00 (CHIP)
18
19
30
32
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
f
T
Gain Bandwidth Product at
V
CE
= 10 V, I
C
= 20 mA
GHz
7.0
6.5
6.5
V
CE
= 3 V, I
C
= 7 mA
GHz
3.0
4.5
4.5
NF
Noise Figure
at
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
dB
1.1
1.4
1.4
1.3
1.4
V
CE
= 10 V, I
C
= 7 mA, f = 2 GHz
dB
2.1
2.1
2.2
2.2
G
A
Associated Gain at
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
dB
13
12.5
12
10
f = 2 GHz
dB
10
7
6.5
6
|S
21E
|
2
Insertion Power Gain at
V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
dB
11
13
12
12
9.5
f = 2 GHz
dB
7
9
7
6
h
FE
Forward Current Gain
2
at
V
CE
= 10 V, I
C
= 20 mA
50 120 300
50
120 300
50
120 300
V
CE
= 3 V, I
C
= 7 mA
80
120 160
40
110 250
I
CBO
Collector Cutoff Current
at V
CB
= 15 V, I
E
= 0 mA
A
1.0
1.0
1.0
1.0
1.0
I
EBO
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
A
1.0
1.0
1.0
1.0
1.0
C
re
Feedback Capacitance
3
at
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
pF
0.7
1.5
0.7
1.5
V
CB
= 10 V, I
E
= 0 mA, f = 1 MHz
pF
0.5
1.0
0.5
0.9
0.65 1.0
P
T
Total Power Dissipation
mW
700
150
100
150
600
R
TH (J-A)
Thermal Resistance (J-A)
C/W
833
1000
833
210
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
PART NUMBER
NE85633
NE85634
NE85635
NE85639/39R
EIAJ
1
REGISTERED NUMBER
2SC3356
2SC3357
2SC3603
2SC4093
PACKAGE OUTLINE
33
34
35
39
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP MAX MIN
TYP MAX
MIN
TYP MAX MIN
TYP MAX
f
T
Gain Bandwidth Product at
V
CE
= 10 V, I
C
= 20 mA
GHz
7.0
6.5
7.0
9.0
NF
Noise Figure at
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
dB
1.4
2.0
1.4
1.5
2.1
f = 2 GHz
dB
2.1
3.4
G
A
Associated Gain at
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
dB
9
13.5
f = 2 GHz
dB
10
8.5
|S
21E
|
2
Insertion Power Gain at
V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
dB
11.5
9.5
13
f = 2 GHz
dB
7
9
7
h
FE
Forward Current Gain
2
at
V
CE
= 10 V, I
C
= 20 mA
50
120
300
50
120
300
50
120
300
50
120
300
I
CBO
Collector Cutoff Current
at V
CB
= 15 V, I
E
= 0
mA
A
1.0
1.0
1.0
1.0
I
EBO
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
A
1.0
1.0
1.0
1.0
C
re
Feedback Capacitance
3
at
V
CB
= 10 V, I
E
= 0 mA, f = 1 MHz
pF
0.55
1.0
0.65
1.0
0.5
1.0
0.5
0.9
P
T
Total Power Dissipation
mW
200
2000
4
580
200
R
TH (J-A)
Thermal Resistance (J to A)
C/W
625
62.5
4
590
500
Notes:
1. Electronic Industrial Association of Japan.
2. Pulse width
350
s, duty cycle
2% pulsed.
3. C
re
measurement employs a three terminal capacitance bridge incorporating a
guard circuit. The emitter terminal shall be connected to the guard terminal.
4. With 2.5 cm
2
x 0.7 mm ceramic substrate (infinite heatsink).
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
20
V
CEO
Collector to Emitter Voltage
V
12
V
EBO
Emitter to Base Voltage
V
3.0
I
C
Collector Current
mA
100
T
J
Junction Temperature
C
150
2
T
STG
Storage Temperature
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
Notes:
1. Operation in excess of any one of these parameters may result
in
permanent damage.
2. Maximum T
J
for the NE85600 and NE85635 is 200
C.
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
Collector to Base Voltage, V
CB
(V)
Collector Current, I
C
(mA)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Ambient Temperature, T
A
(
C)
Ambient Temperature, T
A
(
C)
NE85632 AND NE85634
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
NE85633 AND NE85635
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Total Power Dissipation, P
T
(mW)
DC Forward Current Gain, h
FE
Total Power Dissipation, P
T
(mW)
Collector to Base Capacitance, C
OB
(pF)
COLLECTOR TO BASE
CAPACITANCE vs. COLLECTOR
TO BASE VOLTAGE
NE856 SERIES
NE85635
NE85633
0 50 100 150 200
400
300
200
100
0
NE85634
Ceramic Substrate
2.5 cm X 0.7 mm
R
TH (J-A)
= 62.5C/W
NE85632
with Heat
Sink
Aluminum
Heat Sink
for NE85632
NE85632
Free Air
NE85634
Free Air
0 50 100 150
2.4
2.0
1.6
1.2
0.8
0.4
0
10
7.8
3.8
2
NE85634
NE85632/
33
NE85635
1 2 3 5 7 10 20 30 50
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
V
CE
= 10 V
1 2 3 5 7 10 20 30 50
500
300
200
100
70
50
30
20
10
NE856 SERIES
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Collector Current, I
C
(mA)
Gain Bandwidth Product, f
T
(GHz)
IM
2
, IM
3
(dB)
Insertion Gain, |S
21E
|
2
(dB)
Collector Current, I
C
(mA)
NE85635
INSERTION GAIN vs.
COLLECTOR CURRENT
Insertion Gain, |S
21E
|
2
(dB)
Collector Current, I
C
(mA)
INSERTION GAIN vs.
COLLECTOR CURRENT
Collector Current, I
C
(mA)
Frequency, f (GHz)
Insertion Gain, |S
21E
|
2
(dB)
Maximum Available Gain, MAG (dB)
Frequency, f (GHz)
Insertion Gain, |S
21E
|
2
(dB)
Maximum Available Gain, MAG (dB)
NE85635
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
NE85634
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
NE85632 AND NE85634
INTERMODULATION DISTORTION
vs. COLLECTOR CURRENT
V
CE
= 10 V
I
C
= 20 mA
MAG
|S
21E
|
2
0.1 0.2 0.3 0.5 0.7 1.0 2.0
25
20
15
10
5
0
MAG
|S
21E
|
2
V
CE
= 10 V
I
C
= 20 mA
0.1 0.2 0.3 0.5 1 2 5 10
25
20
15
10
5
0
-5
V
CE
= 10 V
NE85632
NE85634
NE85635
NE85633
1 2 3 5 7 10 20 30 50 70 100
10
7
5
3
2
1
IM
3
IM
2
V
CE
= 10 V
V
O
= 100 dB
V/50
R
G
= R
L
= 50
IM
2
f = 90 + 100 MHz
IM
3
f = 2
X
200-190 MHz
20 30 40 50 60 70
-80
-70
-60
-50
-40
-30
V
CE
= 10 V
f = 1 GHz
NE85633
NE85632
NE85634
1 2 3 5 7 10 20 30 50 70 100
16
14
12
10
8
6
4
V
CE
= 10 V
f = 500 MHz
f = 1 GHz
f = 2 GHz
1 2 5 10 20 50 100
24
20
16
12
8
4
0
NE856 SERIES
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
NE85633
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
Noise Figure, NF (dB)
NE85635
NOISE FIGURE
vs. COLLECTOR CURRENT
Frequency, f (GHz)
Insertion Gain, |S
21E
|
2
(dB)
Maximum Available Gain, MAG (dB)
Collector Current, I
C
(mA)
NE85600
TYPICAL NOISE PARAMETERS
(T
A
= 25
C)
FREQ.
NF
OPT
G
A
OPT
(MHz)
(dB)
(dB)
MAG
ANG
Rn/50
500
1.73
6.03
0.74
73
1.23
800
2.20
4.42
0.74
113
0.62
V
CC
= 2.5 V, I
C
= 1.0 mA
500
1.15
11.26
0.60
75
0.36
800
1.50
9.15
0.58
117
0.20
1000
1.90
7.74
0.60
136
0.16
V
CE
= 2.5 V, I
C
= 3.0 mA
500
1.00
14.83
0.43
80
0.17
800
1.22
11.81
0.40
122
0.10
1000
1.35
10.46
0.46
143
0.09
1500
1.70
7.66
0.64
174
0.04
V
CE
= 3 V, I
C
= 5.0 mA
500
1.07
16.48
0.30
87
0.12
800
1.21
13.06
0.31
129
0.09
1000
1.34
11.56
0.37
149
0.08
1500
1.69
8.44
0.46
171
0.06
2000
2.17
6.99
0.52
-150
0.14
V
CE
= 10 V, I
C
= 7.0 mA
500
1.10
18.42
0.27
83
0.13
800
1.24
14.90
0.28
123
0.10
1000
1.37
13.34
0.32
143
0.08
1500
1.72
10.39
0.42
172
0.06
2000
2.20
8.69
0.47
-152
0.14
2500
2.75
7.31
0.54
-134
0.45
NE85619
TYPICAL NOISE PARAMETERS
(T
A
= 25
C)
NE85630
TYPICAL NOISE PARAMETERS
(T
A
= 25
C)
FREQ.
NF
OPT
G
A
OPT
(MHz)
(dB)
(dB)
MAG
ANG
Rn/50
500
1.2
21.86
0.20
138
0.13
1000
1.4
15.82
0.22
158
0.19
2000
2.2
11.87
0.49
176
0.23
4000
4.2
5.75
0.63
-141
0.47
V
CE
= 10 V, I
C
= 7 mA
FREQ.
NF
OPT
G
A
OPT
(MHz)
(dB)
(dB)
MAG
ANG
Rn/50
V
CE
= 2.5 V, I
C
= 0.3 mA
500
1.88
5.63
0.73
79
1.00
800
2.63
6.45
0.78
128
0.60
1000
3.14
5.03
0.79
149
0.17
V
CE
= 2.5 V, I
C
= 1.0 mA
500
1.34
11.08
0.58
83
0.33
800
1.75
9.97
0.62
134
0.17
1000
1.98
8.33
0.63
152
0.10
1500
2.51
5.26
0.71
176
0.04
V
CE
= 2.5 V, I
C
= 3.0 mA
500
1.10
14.41
0.37
92
0.15
800
1.32
11.67
0.44
143
0.08
1000
1.50
10.34
0.48
169
0.07
1500
1.88
7.04
0.56
177
0.05
2000
2.36
5.60
0.60
-150
0.17
V
CE
= 10 V, I
C
= 7.0 mA
500
1.15
17.20
0.21
113
0.09
1000
1.27
12.67
0.32
177
0.15
1500
1.66
9.50
0.46
-141
0.52
2000
2.22
7.45
0.57
-118
0.67
3000
3.30
4.62
0.65
-92
0.70
V
CE
= 2.5 V, I
C
= 0.3 mA
V
CE
= 10 V
I
C
= 20 mA
MAG
|S21E|
2
0.1 0.2 0.3 0.5 0.7 1.0 2.0
25
20
15
10
5
0
V
CE
= 10 V
f = 1 GHz
1 2 3 5 7 10 20 30 50 70 100
6
5
4
3
2
1
0
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