PART NUMBER
NE856M02
EIAJ
1
REGISTERED NUMBER
2SC5336
PACKAGE OUTLINE
M02
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
A
1.0
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
A
1.0
h
FE2
DC Current Gain at V
CE
= 10 V, I
C
= 20 mA
50
120
250
f
T
Gain Bandwidth Product at V
CE
= 10 V, I
C
= 20 mA
GHz
6.5
C
RE3
Feed-back Capacitance at V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
pF
0.5
0.8
|S
21E
|
2
Insertion Power Gain at V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
dB
12.0
NF
1
Noise Figure 1 at V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
dB
1.1
NF
2
Noise Figure 2 at V
CE
= 10 V, I
C
= 40 mA, f = 1 GHz
dB
1.8
3.0
NE856M02
NPN EPITAXIAL SILICON
TRANSISTOR HIGH FREQUENCY
LOW DISTORTION AMPLIFIER
HIGH COLLECTOR CURRENT:
100 mA MAX
NEW HIGH GAIN POWER MINI-MOLD PACKAGE
(SOT-89 TYPE)
HIGH OUTPUT POWER AT 1 dB COMPRESSION:
22 dBm TYP at 1 GHz
HIGH IP
3
:
32 dBm TYP at 1 GHz
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M02
DESCRIPTION
The NE856M02 is an NPN silicon epitaxial bipolar transistor
designed for medium power applications requiring high dy-
namic range and low intermodulation distortion. This device
offers excellent performance and reliability at low cost through
NEC's titanium, platinum, gold metallization system and direct
nitride passivation of the surface of the chip. The NE856M02
is an excellent choice for low noise amplifiers in the VHF to UHF
band and is suitable for CATV and other telecommunication
applications.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
350
s, duty cycle
2 %.
3.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
California Eastern Laboratories
BOTTOM VIEW
1.6
0.2
1.5
0.1
0.25
0.02
0.42
0.06
1.5
0.42
0.06
0.8
MIN
0.45
0.06
3.95
0.26
2.45
0.1
C
E
B
E
4.5
0.1
3.0
NE856M02
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
20
V
CEO
Collector to Emitter Voltage
V
12
V
EBO
Emitter to Base Voltage
V
3.0
I
C
Collector Current
mA
100
P
T
Total Power Dissipation
2
W
1.2
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Device mounted on 0.7 mm X 16 cm
2
double-sided ceramic
substrate (copper plating).
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Ambient Temperature, T
A
(
C)
Collector to Base Voltage, V
CB
(V)
Feed-back Capacitance, Cre (pF)
Collector Current, Ic (mA)
Collector Current, I
C
(mA)
DC Current Gain, h
FE
Total Power Dissipation, P
T
(W)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
FEED BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
INSERTION GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Insertion Power Gain, |S
21E
|
2
(dB)
2.0
1.0
0
50
100
150
Free Air
R
TH (J-A)
312.5
CW
Ceramic Substrate
16 cm x 0.7 mm
2
f = 1.0 MHz
5.0
3.0
2.0
1.0
0.5
0.8
1
3
5
10
20
30
V
CE
= 10 V
200
100
50
20
10
0.5
1
5
10
50
15
10
5
0
1
3
5
10
20 30
50
100
V
CE
= 10 V
f = 1 GHz
PART NUMBER
QUANTITY
PACKAGING
NE856M02-T1
1000
Tape & Reel
ORDERING INFORMATION
NE856M02
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Collector Current, Ic (mA)
Frequency, f (GHz)
Insertion Power Gain, I
S21E|
2
(dB)
Maximum Available Gain, MAG (dB)
Collector Current, Ic (mA)
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
Gain Bandwidth Product, f
T
(GHz)
GAIN BAND WIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION GAIN AND MAXIMUM
GAIN vs. FREQUENCY
INTERMODULATION DISTORTION vs.
COLLECTOR CURRENT
NOISE FIGURE vs.
COLLECTOR CURRENT
Intermodulation Distortion, IM
2
(dBc)
V
CE
= 10 V
f = 1 GHz
10
5
3
2
1
0.5
0.3
1
3
5
10
20
30
50
20
10
0
0.2
0.4
0.6
0.8 1.0 1.4
2.0
V
CE
= 10 V
Ic = 20 mA
MAG
|S
21E
|
2
7
6
5
4
3
2
1
0
0.5
1
5
10
50
V
CE
= 10 V
f = 1 GHz
-80
-70
-60
-50
-40
-30
20
30
40
50
60
70
V
CE
= 10 V
V
O
= 100 dB
V/50
Rg = Re 50
IM f = 90 + 100 MHz
{
at
2
IM f = 2 x 200 - 190 MHz
3
IM3
IM2
NE856M02
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
(T
A
= 25
C)
NE856M02
V
CE
= 3 V, I
C
= 10 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.100
0.626
-67.5
20.474
137.7
0.031
60.2
0.766
-36.6
0.26
28.2
0.200
0.535
-110.6
14.152
115.2
0.044
50.4
0.541
-52.5
0.47
25.1
0.400
0.479
-149.7
7.982
94.8
0.059
50.0
0.366
-63.4
0.77
21.3
0.600
0.465
-168.7
5.464
83.6
0.073
53.3
0.316
-68.4
0.94
18.7
0.800
0.461
178.6
4.146
75.2
0.089
55.6
0.306
-72.9
1.03
15.7
1.000
0.459
168.7
3.339
68.0
0.104
56.7
0.311
-77.1
1.08
13.3
1.200
0.458
160.4
2.800
61.5
0.121
56.9
0.323
-81.0
1.10
11.7
1.400
0.458
152.9
2.415
55.5
0.138
56.7
0.340
-84.8
1.11
10.5
1.600
0.457
146.0
2.127
49.9
0.155
55.8
0.358
-88.1
1.10
9.4
1.800
0.458
139.5
1.905
44.6
0.171
54.8
0.376
-91.4
1.10
8.6
2.000
0.457
133.2
1.728
39.5
0.188
53.5
0.394
-94.3
1.08
7.9
2.200
0.457
127.0
1.582
34.7
0.205
51.9
0.412
-97.1
1.07
7.2
2.400
0.458
121.2
1.464
30.2
0.222
50.2
0.428
-99.7
1.05
6.8
2.600
0.459
115.4
1.363
26.0
0.239
48.6
0.442
-102.2
1.04
6.3
2.800
0.460
109.7
1.278
21.9
0.256
46.6
0.455
-104.8
1.02
6.0
3.000
0.462
103.9
1.204
17.9
0.272
44.5
0.466
-107.4
1.01
5.7
0
j
10
j
25
j
50
j
100
-j
10
-j
25
-j
50
-j
100
S
22
3 GHz
S
22
0.1 GHz
S
11
3 GHz
S
11
0.1 GHz
90
270
180
225
315
135
45
S
21
3 GHz
S
21
0.1 GHz
S
12
3 GHz
S
12
0.1 GHz
0
Note:
1. Gain Calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
Coordinates in Ohms
Frequency in GHz
V
CE
= 3 V, I
C
= 10 mA
NE856M02
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
(T
A
= 25
C)
NE856M02
V
CE
= 5 V, I
C
= 20 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.100
0.481
-88.5
28.679
129.0
0.023
57.9
0.664
-41.3
0.42
31.0
0.200
0.434
-130.1
17.703
108.4
0.031
56.9
0.445
-52.9
0.68
27.5
0.400
0.414
-162.4
9.494
91.4
0.048
62.0
0.311
-58.6
0.92
22.9
0.600
0.411
-178.1
6.428
81.9
0.066
64.1
0.280
-62.1
1.02
19.1
0.800
0.410
171.0
4.855
74.4
0.084
65.0
0.280
-66.4
1.05
16.2
1.000
0.410
162.2
3.900
67.9
0.101
64.4
0.290
-70.7
1.07
14.2
1.200
0.409
154.5
3.265
61.9
0.120
63.2
0.305
-74.9
1.07
12.7
1.400
0.409
147.5
2.810
56.3
0.137
61.8
0.323
-79.0
1.07
11.4
1.600
0.408
140.9
2.471
51.0
0.154
60.0
0.343
-82.5
1.07
10.4
1.800
0.407
134.6
2.208
45.9
0.172
58.2
0.362
-85.9
1.06
9.6
2.000
0.406
128.6
2.000
41.1
0.188
56.2
0.381
-88.8
1.05
8.9
2.200
0.406
122.7
1.829
36.4
0.205
54.1
0.399
-91.7
1.04
8.3
2.400
0.406
117.0
1.689
32.0
0.222
52.0
0.416
-94.4
1.03
7.8
2.600
0.406
111.4
1.571
27.7
0.238
49.8
0.431
-96.9
1.02
7.4
2.800
0.408
105.9
1.471
23.7
0.253
47.6
0.445
-99.4
1.01
7.1
3.000
0.409
100.4
1.384
19.7
0.268
45.3
0.457
-101.9
1.00
7.1
0
j
10
j
25
j
50
j
100
-j
10
-j
25
-j
50
-j
100
S
22
3 GHz
S
22
0.1 GHz
S
11
3 GHz
S
11
0.1 GHz
90
270
180
225
315
135
45
S
21
3 GHz
S
21
0.1 GHz
S
12
3 GHz
S
12
0.1 GHz
0
Note:
1. Gain Calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
Coordinates in Ohms
Frequency in GHz
V
CE
= 5 V, I
C
= 20 mA
NE856M02
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
(T
A
= 25
C)
NE856M02
V
CE
= 10 V, I
C
= 20 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.100
0.508
-78.9
29.606
131.4
0.019
57.0
0.707
-34.0
0.43
32.0
0.200
0.425
-120.5
18.715
110.2
0.029
57.5
0.500
-42.7
0.65
28.1
0.400
0.384
-156.2
10.140
92.5
0.043
62.1
0.373
-45.9
0.91
23.7
0.600
0.376
-173.7
6.875
82.6
0.058
64.6
0.347
-48.9
1.01
20.0
0.800
0.374
174.4
5.192
75.0
0.074
65.4
0.346
-53.4
1.05
17.1
1.000
0.374
164.9
4.168
68.3
0.090
65.3
0.356
-58.2
1.07
15.0
1.200
0.375
156.8
3.481
62.2
0.106
64.5
0.370
-63.0
1.07
13.5
1.400
0.375
149.5
2.990
56.6
0.122
63.4
0.387
-67.7
1.07
12.3
1.600
0.375
142.7
2.620
51.2
0.137
61.9
0.406
-71.9
1.06
11.3
1.800
0.376
136.2
2.337
46.1
0.153
60.3
0.424
-75.9
1.05
10.4
2.000
0.377
130.1
2.109
41.2
0.168
58.6
0.443
-79.4
1.04
9.7
2.200
0.378
123.9
1.922
36.5
0.183
56.8
0.461
-82.9
1.03
9.2
2.400
0.380
118.2
1.770
32.1
0.198
54.8
0.478
-85.9
1.01
8.9
2.600
0.382
112.6
1.640
27.8
0.213
53.2
0.494
-88.8
0.99
8.9
2.800
0.385
107.0
1.531
23.7
0.227
51.1
0.508
-91.7
0.98
8.3
3.000
0.388
101.4
1.435
19.8
0.242
49.1
0.521
-94.5
0.97
7.7
0
j
10
j
25
j
50
j
100
-j
10
-j
25
-j
50
-j
100
S
22
3 GHz
S
22
0.1 GHz
S
11
3 GHz
S
11
0.1 GHz
90
270
180
225
315
135
45
S
21
3 GHz
S
21
0.1 GHz
S
12
3 GHz
S
12
0.1 GHz
0
Note:
1. Gain Calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
Coordinates in Ohms
Frequency in GHz
V
CE
= 10 V, I
C
= 20 mA
NE856M02
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
(T
A
= 25
C)
NE856M02
V
CE
= 10 V, I
C
= 50 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0
j
10
j
25
j
50
j
100
-j
10
-j
25
-j
50
-j
100
S
22
3 GHz
S
22
0.1 GHz
S
11
3 GHz
S
11
0.1 GHz
90
270
180
225
315
135
45
S
21
3 GHz
S
21
0.1 GHz
S
12
3 GHz
S
12
0.1 GHz
0
Note:
1. Gain Calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
0.100
0.388
-113.0
35.396
119.8
0.015
64.1
0.569
-38.2
0.60
33.7
0.200
0.380
-147.3
20.013
102.2
0.023
66.1
0.399
-40.5
0.85
29.4
0.400
0.377
-172.1
10.398
88.1
0.040
70.5
0.325
-41.0
1.00
23.7
0.600
0.378
175.4
6.989
79.6
0.057
71.3
0.316
-44.8
1.05
19.5
0.800
0.379
166.1
5.262
72.7
0.075
71.0
0.324
-50.2
1.06
16.9
1.000
0.380
158.2
4.218
66.5
0.092
69.4
0.337
-55.9
1.07
15.1
1.200
0.381
151.2
3.521
60.7
0.109
67.8
0.354
-61.1
1.06
13.6
1.400
0.382
144.7
3.023
55.3
0.125
65.9
0.373
-66.2
1.06
12.4
1.600
0.381
138.5
2.650
50.1
0.141
64.0
0.393
-70.7
1.05
11.4
1.800
0.382
132.5
2.362
45.1
0.157
62.0
0.412
-74.9
1.04
10.6
2.000
0.383
126.8
2.132
40.2
0.173
59.9
0.432
-78.6
1.03
9.9
2.200
0.383
121.0
1.943
35.6
0.188
57.7
0.451
-82.1
1.01
9.4
2.400
0.385
115.6
1.789
31.2
0.203
55.6
0.468
-85.3
1.00
9.5
2.600
0.386
110.2
1.657
27.0
0.218
53.6
0.485
-88.3
0.98
8.8
2.800
0.389
104.8
1.547
22.9
0.232
51.3
0.500
-91.2
0.97
8.2
3.000
0.392
99.5
1.450
19.0
0.246
49.3
0.513
-94.0
0.96
7.7
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
Internet: http://WWW.CEL.COM
11/14/2001
DATA SUBJECT TO CHANGE WITHOUT NOTICE
Coordinates in Ohms
Frequency in GHz
V
CE
= 10 V, I
C
= 50 mA
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
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