The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
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N-CHANNEL GaAs MES FET
NE960R2 SERIES
0.2 W X, Ku-BAND POWER GaAs MES FET
Document No. P13775EJ2V0DS00 (2nd edition)
Date Published July 1999 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
1998, 1999
The mark
shows major revised points.
DESCRIPTION
The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Ku-
band microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear
gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers
etc. The NE961R200 and the NE960R200 are available in chip form. The NE960R200 has a via hole source
grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R275 is available in a hermetically
sealed ceramic package. Reliability and performance uniformity are assured by NEC's stringent quality and control
procedures.
FEATURES
High Output Power
: P
o (1 dB)
= +25.0 dBm TYP.
High Linear Gain
: 10.0 dB TYP.
High Power Added Efficiency: 35 % TYP. @V
DS
= 9 V, I
Dset
= 90 mA, f = 14.5 GHz
ORDERING INFORMATION
Part Number
Package
Supplying Form
NE960R200
NE961R200
00 (CHIP)
NE960R275
75
ESD protective envelope
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE960R200, NE960R275, NE961R200)
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
Preliminary Data Sheet P13775EJ2V0DS00
2
NE960R2 SERIES
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
15
V
Gate to Source Voltage
V
GSO
7
V
Drain Current
I
D
0.35
A
Gate Forward Current
I
GF
+2.5
mA
Gate Reverse Current
I
GR
2.5
mA
Total Power Dissipation
P
T
2.5 (2.1
Note
)
W
Channel Temperature
T
ch
175
C
Storage Temperature
T
stg
65 to +175
C
Note NE961R200
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Test Condition
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
-
9.0
9.0
V
Gain Compression
Gcomp
-
-
3.0
dB
Channel Temperature
T
ch
-
-
+130
C
ELECTRICAL CHARACTERISTICS
(T
A
= +25
C, Unless otherwise specified, using NEC standard test fixture.)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Saturated Drain Current
I
DSS
V
DS
= 1.5 V, V
GS
= 0 V
0.09
0.2
0.35
A
Pinch-off Voltage
V
p
V
DS
= 2.5 V, I
D
= 1 mA
2.5
1.8
0.5
V
Gate to Drain Break Down
Voltage
BV
gd
I
gd
= 1 mA
15
-
-
V
Thermal Resistance
R
th
Channel to Case
-
-
60
(70
Note
)
C/W
Output Power at P
in
= +15 dBm
P
out
22.0
24.0
-
dBm
Output Power at 1 dB Gain
Compression Point
P
o (1 dB)
-
25.0
-
dBm
Power Added Efficiency at
P
O (1dB)
add
-
35
-
%
Linear Gain
G
L
f = 14.5 GHz, V
DS
= 9.0 V
R
g
= 1 k
I
Dset
= 90 mA (RF OFF)
8.0
10.0
-
dB
Note NE961R200
Remark DC and RF performance is 100 % testing.
Preliminary Data Sheet P13775EJ2V0DS00
3
NE960R2 SERIES
TYPICAL CHARACTERISTICS (T
A
= +25
C)
30
25
20
15
10
60
45
30
15
0
5
10
15
f = 14.5 GHz (1 tone),
V
DS
= 9 V, I
Dset
= 90 mA
R
g
= 1 k
20
25
OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm)
Power Added Efficiency
add
(%)
5
10
15
20
25
5
10
15
20
25
200
150
100
50
0
14
12
10
8
6
DRAIN CURRENT AND GAIN vs. INPUT POWER
Input Power P
in
(dBm)
GATE CURRENT vs. INPUT POWER
Input Power P
in
(dBm)
Input Power P
in
(dBm)
Drain Current I
D
(mA)
Gain (dB)
1.5
1.0
0.5
0.0
0.5
Gate Current I
g
(mA)
Preliminary Data Sheet P13775EJ2V0DS00
4
NE960R2 SERIES
TYPICAL S-PARAMETER
[NE960R275]
TEST CONDITIONS: V
DS
= 9 V, I
Dset
= 90 mA
FREQUENCY
S
11
S
21
S
12
S
22
GHz
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
0.89
0.86
0.85
0.84
0.81
0.83
0.81
0.75
0.71
0.62
0.48
0.54
0.69
0.80
0.81
113
129
138
140
144
152
163
176
166
140
86
20
20
45
66
3.99
2.88
2.29
1.99
1.78
1.77
1.82
1.89
2.12
2.42
2.50
2.32
1.77
1.30
1.03
98
80
65
51
39
27
15
0
19
44
78
113
144
166
167
0.057
0.058
0.057
0.057
0.059
0.060
0.062
0.062
0.064
0.072
0.074
0.065
0.049
0.040
0.039
34
15
10
7
5
3
3
1
0
17
46
88
132
176
149
0.42
0.46
0.43
0.41
0.44
0.49
0.53
0.52
0.47
0.45
0.50
0.56
0.59
0.61
0.67
79
85
94
110
125
135
141
150
167
164
129
94
68
44
27
START 2 GHz, STOP 16 GHz, STEP 1 GHz
1.0
0.5
2.0
0
0.5
1.0
2.0
S
11
R
max.
= 1
+90
+135
+45
180
0
135
90
45
S
12
R
max.
= 0.1
+90
+135
+45
180
0
135
90
45
S
21
16 GHz
0.5
1.0
2.0
1.0
0.5
2.0
0
0.5
1.0
2.0
S
22
R
max.
= 1
2 GHz
2 GHz
0.5
1.0
2.0
R
max.
= 5
2 GHz
16 GHz
16 GHz
2 GHz
16 GHz
Preliminary Data Sheet P13775EJ2V0DS00
5
NE960R2 SERIES
[NE960R200]
TEST CONDITIONS: V
DS
= 9 V, I
Dset
= 90 mA
FREQUENCY
S
11
S
21
S
12
S
22
GHz
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.87
0.84
0.82
0.82
0.82
0.81
0.79
0.77
0.79
0.80
0.80
0.82
0.84
0.83
0.84
0.83
0.84
-
97
-
117
-
131
-
139
-
145
-
148
-
150
-
153
-
157
-
162
-
169
-
176
-
178
178
175
173
170
7.60
3.84
2.98
2.46
2.10
1.85
1.57
1.45
1.33
1.23
1.17
1.13
0.95
0.83
0.78
0.74
0.59
-
166
-
147
-
135
-
109
-
82
-
54
-
29
1
30
56
82
104
129
165
-
165
-
137
-
112
0.061
0.062
0.065
0.069
0.069
0.064
0.059
0.072
0.059
0.057
0.070
0.043
0.061
0.048
0.049
0.044
0.061
104
124
159
-
173
141
-
118
-
72
-
47
-
13
24
56
79
128
137
-
172
-
131
-
106
0.36
0.34
0.33
0.34
0.37
0.40
0.43
0.47
0.50
0.51
0.52
0.54
0.55
0.57
0.57
0.57
0.56
-
49
-
64
-
74
-
85
-
93
-
99
-
103
-
106
-
108
-
110
-
114
-
118
-
122
-
126
-
129
-
132
-
142
Caution S-parameters include bond wires.
Gate
: Total 2 wires, 1 per bond pad, 300
m long each wire.
Drain
: Total 2 wires, 1 per bond pad, 300
m long each wire.
Source : No bond wires.
Wire
: 25
m diameter, gold.
Preliminary Data Sheet P13775EJ2V0DS00
6
NE960R2 SERIES
[NE961R200]
TEST CONDITIONS: V
DS
= 9 V, I
Dset
= 90 mA
FREQUENCY
S
11
S
21
S
12
S
22
GHz
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
MAG.
ANG. (deg.)
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.85
0.80
0.78
0.77
0.77
0.76
0.74
0.74
0.74
0.74
0.74
0.76
0.77
0.77
0.78
0.77
0.78
-
92
-
114
-
128
-
142
-
143
-
146
-
149
-
152
-
157
-
163
-
171
-
176
178
175
172
168
164
8.08
3.83
3.17
2.64
2.25
1.99
1.71
1.60
1.47
1.37
1.29
1.25
1.06
0.96
0.89
0.88
0.68
-
152
-
146
-
135
-
108
-
80
-
52
-
28
2
30
57
83
107
131
167
-
162
-
134
-
107
0.056
0.058
0.060
0.064
0.067
0.066
0.065
0.082
0.072
0.076
0.102
0.074
0.113
0.098
0.114
0.115
0.165
112
136
172
-
154
-
117
-
88
-
40
-
11
29
70
107
133
180
-
165
-
117
-
76
-
55
0.40
0.36
0.34
0.33
0.34
0.37
0.40
0.44
0.47
0.49
0.50
0.52
0.52
0.53
0.54
0.52
0.52
-
39
-
52
-
60
-
70
-
80
-
87
-
94
-
98
-
99
-
103
-
107
-
111
-
117
-
122
-
127
-
131
-
141
Caution S-parameters include bond wires.
Gate
: Total 2 wires, 1 per bond pad, 300
m long each wire.
Drain
: Total 2 wires, 1 per bond pad, 300
m long each wire.
Source : Total 4 wires, 1 per bond pad, 300
m long each wire.
Wire
: 25
m diameter, gold.
Preliminary Data Sheet P13775EJ2V0DS00
7
NE960R2 SERIES
PACKAGE DIMENSIONS
PACKAGE CODE-75 (Unit: mm)
1.8
2.7
7.0
9.8 MAX.
0.9 MAX.
0.5
Gate
2.3
1.13
2.3
2.7
3.0 MIN.
3.0 MIN.
Drain
PHYSICAL DIMENSIONS
NE960R200 (CHIP) (Unit:
m)
NE961R200 (CHIP) (Unit:
m)
G
D
Source
285
80
150
880
80
150
80
285
285
95
90
90
95
530
Remark Chip thickness
G
D
Source is grounded through via hole.
: 100 m
: Gate
: Drain
G
D
Source
285
80
150
880
80
150
80
285
285
95
90
90
95
530
Remark Chip thickness
G
D
: 140 m
: Gate
: Drain
Preliminary Data Sheet P13775EJ2V0DS00
8
NE960R2 SERIES
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Partial Heating
Pin temperature: 260
C
Time: 5 seconds or less (per pin row)
Exposure limit: None
Note
Note After opening the dry pack, keep it in a place below 25
C and 65 % RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
CHIP HANDLING
DIE ATTACHMENT
Die attach can be accomplished with a Au-Sn (300
10
C) performs in a forming gas environment. Epoxy die
attach is not recommended.
BONDING
Gate and drain bonding wires should be minimum length, semi-hard gold wire (3 to 8 % elongation) 30 microns or
less in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %.
Die attach and bonding time should be kept to a minimum. As a general rule, the bonding operation should be
kept within a 280
C_5 minute curve. If longer periods are required, the temperature should be lowered.
PRECAUTIONS
The user must operate in a clean, dry environment.
The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean
environment.
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of
static discharge.
Preliminary Data Sheet P13775EJ2V0DS00
9
NE960R2 SERIES
[MEMO]
Preliminary Data Sheet P13775EJ2V0DS00
10
NE960R2 SERIES
[MEMO]
Preliminary Data Sheet P13775EJ2V0DS00
11
NE960R2 SERIES
[MEMO]
NE960R2 SERIES
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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