NESG2030M04
NPN SiGe HIGH FREQUENCY TRANSISTOR
M04
DESCRIPTION
The NESG2030M04 is fabricated using NEC's state-of-the-art
SiGe, wafer process. With a typical transition frequency of
60 GHz the NESG2030M04 is usable in applications from 100
MHz to over 10 GHz. Maximum DC current input of 35 mA
provides a device with a usable current range of 250
A to 25
mA. The NESG2030M04 provides excellent low voltage/low
current performance.
NEC's new low profile/flat lead style "M04" package is ideal for
today's portable wireless applications. The NESG2030M04 is
an ideal choice for LNA and oscillator requirements in all
mobile communication systems.
California Eastern Laboratories
PART NUMBER
NESG2030M04
EIAJ
1
REGISTERED NUMBER
2SC5761
PACKAGE OUTLINE
M04
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
nA
200
I
EBO
Emitter Cutoff Current at V
EB
= 0.5 V, I
C
= 0
nA
200
h
FE
DC Current Gain
2
at V
CE
= 2 V, I
C
= 5 mA
200
400
C
re
Reverse Transfer Capacitance
3
at V
CB
= 2 V, I
E
= 0 mA, f = 1 GHz
pF
0.17
0.22
NF
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
IN
= Z
OPT
dB
0.9
1.1
G
a
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
S
= Z
OPT
GHz
16
MSG
Maximum Stable Gain
4
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
dB
18
20
|S
21E
|
2
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
dB
16
18
P
1dB
Output Power at 1 dB compression point
dBm
12
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
OIP
3
Third Order Intercept Point, V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
dBm
22
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
350
s, duty cycle
2 %.
3. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
4. MSG =
DC
RF
S
21
S
12
SiGe TECHNOLOGY:
f
T
= 60 GHz Process
LOW NOISE FIGURE:
NF
= 0.9 dBm at 2 GHz
HIGH MAXIMUM STABLE GAIN:
MSG
= 20 dB at 2 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
FEATURES
PART NUMBER QUANTITY
NESG2030M04
50 pcs(non reel)
NESG2030M04-T2
3 kpcs/reel
ORDERING INFORMATION
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy substrate
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
8.0
V
CEO
Collector to Emitter Voltage
V
2.3
V
EBO
Emitter to Base Voltage
V
1.2
I
C
Collector Current
mA
35
P
T2
Total Power Dissipation
mW
80
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
NESG2030M04
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Collector Current, l
C
(mA)
DC Current Gain, hFE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector to Emitter Voltage, V
CE
(V)
Collector Current, Ic (mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Frequency, f (GHz)
Insertion Power Gain, |S
21e
|
2
(dB)
INSERTION POWER GAIN
vs. FREQUENCY
V
CE
= 2 V
I
C
= 20 mA
30
25
20
15
10
5
0
0.1
1
10
Collector Current, I
C
(mA)
Gain Bandwdth, f
T
(GHz)
GAIN BANDWIDTH vs.
COLLECTOR CURRENT
40
35
30
25
20
15
10
5
0
0
10
100
V
CE
= 2 V
f = 2 GHz
SYMBOLS
PARAMETERS
UNITS
RATINGS
R
th j-c
Junction to Case Resistance
C/W
150
THERMAL RESISTANCE
40
35
30
25
20
15
10
5
0
0
1
2
3
100
a
130
a
40
a
I
B
= 10
a
160
a
70
a
190
a
1000
100
10
100
10
1
0.1
V
CE
= 2 V
NESG2030M04
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Collector Current, I
C
(mA)
Maximum Stable Gain, MSG (dB)
Insertion Power Gain, IS
21e
I
2
MAXIMUM STABLE GAIN,
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
V
CE
= 2 V
f = 1 GHz
30
25
20
15
10
5
0
1
10
100
MSG
|S
21e
|
2
Collector Current, I
C
(mA)
Maximum Stable Gain, MSG (dB)
Insertion Power Gain, IS
21e
I
2
MAXIMUM STABLE GAIN,
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
V
CE
= 2 V
f = 2 GHz
30
25
20
15
10
5
0
1
10
100
MSG
|S
21e
|
2
Input Power, P
in
(V)
Output Power, P
out
(dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
P
out
I
C
V
CE
= 2 V, f = GHz
I
cq
= 5 mA(RF OFF)
25
20
15
10
5
0
-5
-10
-15
-20
-15
-10
-5
0
5
80
70
60
50
40
30
20
10
0
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
5
4
3
2
1
0
1
10
100
0
5
10
15
20
25
V
CE
= 2 V
f = 1.5 GHz
G
a
NF
Associated Gain, G
A
(dB)
V
CE
= 2 V
f = 5 GHz
30
25
20
15
10
5
0
1
10
100
MAG
|S
21e
|
2
MAXIMUM AVAILABLE GAIN,
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion Power Gain, IS
21e
I
2
Maximum Available Gain, MAG (dB)
V
CE
= 2 V
I
cq
= 5 mA
f = 2 GHz
offset = 1 MHz
70
60
50
40
30
20
10
0
-5
0
5
10
15
20
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Output Power (each tone), P
out
(mA)
Third Order Intermodulation Distortion, IM3 (dBc)
THIRD ORDER INTERMODULATION
DISTORTION
vs. OUTPUT POWER
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
NESG2030M04
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
Collector Current, I
C
(mA)
Collector Current, l
C
(mA)
Noise Figure, NF (dB)
Noise Figure, NF (dB)
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
5
4
3
2
1
0
1
10
100
0
5
10
15
20
25
V
CE
= 2 V
f = 3 GHz
G
a
NF
5
4
3
2
1
0
1
10
100
0
5
10
15
20
25
V
CE
= 2 V
f = 4 GHz
G
a
NF
5
4
3
2
1
0
1
10
100
0
5
10
15
20
25
V
CE
= 2 V
f = 5 GHz
G
a
NF
Associated Gain, G
A
(dB)
Associated Gain, G
A
(dB)
Associated Gain, G
A
(dB)
Collector Current, I
C
(mA)
Collector Current, l
C
(mA)
Noise Figure, NF (dB)
Noise Figure, NF (dB)
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
5
4
3
2
1
0
1
10
100
0
5
10
15
20
25
V
CE
= 2 V
f = 2 GHz
G
a
NF
5
4
3
2
1
0
1
10
100
0
5
10
15
20
25
V
CE
= 2 V
f = 2.5 GHz
G
a
NF
Associated Gain, G
A
(dB)
Associated Gain, G
A
(dB)
NESG2030M04
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M04
FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
4
1
3
2
2.050.1
1.250.1
+0.1
-0.06
+0.1
-0.05
0.40
+0.1
-0.05
0.30
(Leads 1, 3, 4)
2.0 0.1
1.25
1.30
0.60
0.65
0.590.05
0.11
0.65
0.65
T16
TYPICAL NOISE PARAMETERS
(T
A
= 25
C)
FREQ.
NF
MIN
G
A
OPT
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
V
CE
= 2 V, I
C
= 5 mA
0.8
0.77
22.62
0.440
22.0
0.21
0.9
0.77
21.79
0.433
25.3
0.21
1.0
0.78
21.03
0.426
28.6
0.20
1.1
0.78
20.33
0.418
32.0
0.20
1.2
0.79
19.69
0.410
35.5
0.19
1.3
0.79
19.10
0.402
39.0
0.19
1.4
0.80
18.56
0.394
42.6
0.18
1.5
0.81
18.05
0.386
46.3
0.18
1.7
0.82
17.13
0.372
54.0
0.17
1.9
0.84
16.31
0.359
62.1
0.16
2.0
0.85
15.94
0.354
66.3
0.16
2.2
0.87
15.26
0.345
74.9
0.15
2.4
0.89
14.64
0.340
83.6
0.14
2.5
0.91
14.36
0.338
87.9
0.14
2.7
0.93
13.83
0.338
96.4
0.13
3.0
0.98
13.12
0.342
108.6
0.12
3.5
1.06
12.12
0.354
126.4
0.11
4.0
1.15
11.31
0.354
141.4
0.09
4.5
1.26
10.63
0.325
155.7
0.08
V
CE
= 2 V, I
C
= 10 mA
0.8
0.95
24.28
0.264
18.6
0.18
0.9
0.95
23.43
0.261
21.8
0.18
1.0
0.95
22.65
0.257
25.1
0.18
1.1
0.95
21.93
0.253
28.5
0.17
1.2
0.95
21.27
0.249
32.0
0.17
1.3
0.95
20.65
0.244
35.6
0.17
1.4
0.96
20.08
0.239
39.3
0.17
1.5
0.96
19.54
0.234
43.2
0.16
1.7
0.96
18.56
0.226
51.5
0.16
1.9
0.97
17.70
0.219
60.4
0.15
2.0
0.98
17.30
0.216
65.0
0.15
2.2
0.99
16.56
0.213
74.6
0.14
2.4
1.00
15.89
0.213
84.2
0.14
2.5
1.01
15.58
0.214
88.9
0.13
2.7
1.03
15.00
0.219
98.1
0.13
3.0
1.06
14.23
0.229
108.6
0.12
3.5
1.12
13.13
0.249
110.7
0.11
4.0
1.19
12.23
0.258
142.4
0.10
4.5
1.27
11.48
0.243
156.3
0.10
V
CE
= 2 V, I
C
= 20 mA
0.8
1.26
25.33
0.082
14.2
0.17
0.9
1.25
24.45
0.081
17.4
0.17
1.0
1.25
23.65
0.079
20.9
0.17
1.1
1.25
22.91
0.076
24.9
0.17
1.2
1.25
22.23
0.074
29.4
0.17
1.3
1.25
21.60
0.071
34.5
0.16
1.4
1.25
21.01
0.068
40.4
0.16
1.5
1.25
20.46
0.065
47.1
0.16
1.7
1.25
19.46
0.061
63.0
0.15
1.9
1.26
18.57
0.062
81.1
0.15
TYPICAL NOISE PARAMETERS
(CONT')
FREQ.
NF
MIN
G
A
OPT
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
V
CE
= 2 V, I
C
= 20 mA
2.0
1.26
18.16
0.064
90.1
0.15
2.2
1.27
17.40
0.072
106.5
0.15
2.4
1.28
16.71
0.083
119.5
0.14
2.5
1.28
16.39
0.090
124.8
0.14
2.7
1.30
15.79
0.105
133.5
0.14
3.0
1.32
14.97
0.128
143.2
0.13
3.5
1.36
13.81
0.159
154.7
0.13
4.0
1.42
12.84
0.175
164.5
0.12
4.5
1.48
12.02
0.169
176.7
0.12
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