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1999, 2000
MOS FIELD EFFECT TRANSISTOR
PA1763
SWITCHING
DUAL N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
G14056EJ1V0DS00 (1st edition)
Date Published
January 2000 NS CP(K)
Printed in Japan
PACKAGE DRAWING (Unit : mm)
1.27
0.12 M
6.0 0.3
4.4
0.40
+0.10
0.05
0.78 MAX.
0.05 MIN.
1.8 MAX.
1.44
0.8
0.5 0.2
0.15
+0.10
0.05
5.37 MAX.
0.10
1
4
8
5
1
: Source 1
2
: Gate 1
7, 8 : Drain 1
3
: Source 2
4
: Gate 2
5, 6 : Drain 2
EQUIVALENT CIRCUIT
(1/2 Circuit)
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
DESCRIPTION
The
PA1763 is N-Channel MOS Field Effect Transistor
designed for DC/DC Converters.
FEATURES
Dual chip type
Low on-resistance
R
DS(on)1
= 47.0 m
MAX. (V
GS
= 10 V, I
D
= 2.3 A)
R
DS(on)2
= 57.0 m
MAX. (V
GS
= 4.5 V, I
D
= 2.3 A)
R
DS(on)3
= 66.0 m
MAX. (V
GS
= 4.0 V, I
D
= 2.3 A)
Low input capacitance
C
iss
= 870 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA1763G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C, All terminals are connected.)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS
20
V
Drain Current (DC)
I
D(DC)
4.5
A
Drain Current (pulse)
Note1
I
D(pulse)
18
A
Total Power Dissipation (1 unit)
Note2
P
T
1.7
W
Total Power Dissipation (2 unit)
Note2
P
T
2.0
W
Single Avalanche Current
Note3
I
AS
4.5
A
Single Avalanche Energy
Note3
E
AS
60
mJ
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to + 150
C
Notes 1. PW
10
s, Duty cycle
1 %
2. T
A
= 25 C, Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
3. Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
Exceeding the rated voltage may be applied to this device.
The mark
5
shows major revised points.
5
5
5
5
5
5
5
Data Sheet G14056EJ1V0DS00
2
PA1763
ELECTRICAL CHARACTERISTICS (T
A
= 25 C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 2.3 A
37.0
47.0
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 2.3 A
45.0
57.0
m
R
DS(on)3
V
GS
= 4.0 V, I
D
= 2.3 A
49.0
66.0
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 2.3 A
3.0
6.0
S
Drain Leakage Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
A
Gate to Source Leakage Current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10
A
Input Capacitance
C
iss
V
DS
= 10 V
870
pF
Output Capacitance
C
oss
V
GS
= 0 V
150
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
80
pF
Turn-on Delay Time
t
d(on)
I
D
= 2.3 A
11
ns
Rise Time
t
r
V
GS(on)
= 10 V
40
ns
Turn-off Delay Time
t
d(off)
V
DD
= 30 V
50
ns
Fall Time
t
f
R
G
= 10
12
ns
Total Gate Charge
Q
G
I
D
= 4.5 A
20
nC
Gate to Source Charge
Q
GS
V
DD
= 48 V
3
nC
Gate to Drain Charge
Q
GD
V
GS
= 10 V
5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 4.5 A, V
GS
= 0 V
0.80
V
Reverse Recovery Time
t
rr
I
F
= 4.5 A, V
GS
= 0 V
30
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
40
nC
5
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
R
G
= 10
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1
s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
0
0
90 %
90 %
90 %
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10 %
10 %
5
Data Sheet G14056EJ1V0DS00
3
PA1763
TYPICAL CHARACTERISTICS (T
A
= 25C, All terminals are connected.)
FORWARD TRANSFER CHARACTERISTICS
V
GS
-
Gate to Source Voltage - V
I
D
- Drain Current - A
0.001
0.01
0.1
0
1
1.5
2
2.5
3
3.5
4
4.5
5
Pulsed
V
DS
= 10 V
1
10
100
T
A
= 150 C
T
A
= 25 C
T
A
=
-
25 C
T
A
= 75 C
-
1.5
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
0.2
0.6
1.0
1.4
0.8
1.2
1.6
10
0.4
Pulsed
0
5
20
30
25
V
GS
= 4.5 V
V
GS
= 4.0 V
V
GS
= 10 V
15
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
|y
fs
| - Forward Transfer Admittance - S
V
DS
= 10 V
Pulsed
1
1
10
100
10
100
0.1
0.1
T
A
= 75 C
T
A
= 150 C
T
A
=
-
25 C
T
A
= 25 C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
20
10
15
Pulsed
0
5
140
200
120
0
160
100
80
60
40
180
I
D
= 4.5 A
I
D
= 2.3 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On - state Resistance - m
1
10
100
0.1
0.12
0.1
0.08
0.06
0.04
0.02
0
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 2.3 A
V
GS
= 4.0 V
Pulsed
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
=10 V
I
D
= 1 mA
-
75
-
50
-
25
0
150 175
50
25
100 125
75
0
1.5
1
0.5
3
2.5
2
5
Data Sheet G14056EJ1V0DS00
4
PA1763
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
10
60
70
80
90
100
-
50
-
25
20
0
50 75
25
100 125 150 175 200
30
50
40
V
GS
= 4.5 V
V
GS
= 4.0 V
V
GS
= 10 V
I
D
= 2.3 A
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
0.01
0.1
0.00
1
10
100
Pulsed
0.50
1.00
1.50
V
GS
= 10 V
V
GS
= 0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
1
10
0.1
100
1000
10000
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.1
1000
100
10
1
0.1
1
10
100
V
DS
= 30 V
V
GS
= 10 V
R
G
= 10
t
d(on)
t
d(off)
t
f
t
r
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
0.1
1
10
100
10000
1000
100
10
1
di/dt = 100 A/
s
V
GS
= 0 V
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
4
2
8
6
12
10
16 18 20
14
10.0
0
20.0
30.0
50.0
40.0
60.0
55.0
45.0
35.0
25.0
15.0
5.0
2
0
4
6
8
10
12
V
DS
V
GS
V
DD
= 48 V
V
DD
= 30 V
V
DD
= 12 V
I
D
= 6.0 A
Data Sheet G14056EJ1V0DS00
5
PA1763
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
A
- Ambient Temperature - C
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
140
160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - C
P
T
- Total Power Dissipation - W/package
0
20
40
60
80
100
120
140
160
2.8
2.4
2.0
1.6
1.2
0.8
0.4
Mounted on ceramic
substrate of
1200 mm
2
2.2 mm
2 unit
1 unit
FORWARD BIAS SAFE OPERATING AREA
V
DS
-
Drain to Source Voltage - V
I
D
- Drain Current - A
0.1
0.1
1
10
100
1
10
100
T
A
= 25 C
Single Pulse
Mounted on ceramic
substrate of
1200mm
2
2.2 mm, 1 unit
I
D(pulse)
I
D(DC)
P
W
=1
ms
PW
= 10
ms
PW
=
Po
wer Dissipation Limited
R
DS(on)
Limited
(V
GS
=
10
V)
P
W
=100
ms
100 s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance -
C/
W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Mounted on ceramic
substrate of 1200mm
2
2.2 mm
Single Pulse, 1 unit
100
R
th
(ch-A)
= 73.5C/W
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