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Электронный компонент: UPA1870

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2000
MOS FIELD EFFECT TRANSISTOR






PA1870
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
G14886EJ2V0DS00 (2nd edition)
Date Published
April 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The
PA1870 is a switching device which can be
driven directly by a 2.5-V power source.
The
PA1870 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Can be driven by a 2.5-V power source
Low on-state resistance
R
DS(on)1
= 20.0 m
MAX. (V
GS
= 4.5 V, I
D
= 3.0 A)
R
DS(on)2
= 21.0 m
MAX. (V
GS
= 4.0 V, I
D
= 3.0 A)
R
DS(on)3
= 27.0 m
MAX. (V
GS
= 2.5 V, I
D
= 3.0 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA1870GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage
V
DSS
20
V
Gate to Source Voltage
V
GSS
12
V
Drain Current (DC)
I
D(DC)
6.0
A
Drain Current (pulse)
Note 1
I
D(pulse)
80
A
Total Power Dissipation
Note 2
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Notes 1. PW
10
s, Duty Cycle
1%
2. Mounted on ceramic substrate of 50 cm
2
x 1.1
mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1
4
8
5
6.4 0.2
4.4 0.1
1.0 0.2
0.145

0.055
0.1
0.8 MAX.
3.15 0.15
3.0 0.1
0.65
0.10 M
0.27
+0.03
0.08
0.25
0.5
3
+5
3
0.6
+0.15
0.1
1.2 MAX.
0.10.05
1.00.05
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
EQUIVALENT CIRCUIT
Source2
Body
Diode
Gate
Protection
Diode
Gate2
Drain2
Source1
Body
Diode
Gate
Protection
Diode
Gate1
Drain1
Data Sheet G14886EJ2V0DS
2



PA1870
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20
V, V
GS
= 0
V
10
A
Gate Leakage Current
I
GSS
V
GS
= 12
V, V
DS
= 0
V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
0.5
1.0
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 3.0
A
5
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 4.5
V, I
D
= 3.0
A
12.0
15.0
20.0
m
R
DS(on)2
V
GS
= 4.0
V, I
D
= 3.0
A
13.0
15.5
21.0
m
R
DS(on)3
V
GS
= 2.5
V, I
D
= 3.0
A
15.0
20.8
27.0
m
Input Capacitance
C
iss
V
DS
= 10
V
900
pF
Output Capacitance
C
oss
V
GS
= 0
V
295
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
170
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10
V, I
D
= 3.0
A
55
ns
Rise Time
t
r
V
GS(on)
= 4.0
V
210
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
300
ns
Fall Time
t
f
340
ns
Total Gate Charge
Q
G
V
DD
= 16
V
10
nC
Gate to Source Charge
Q
GS
V
GS
= 4.0
V
2
nC
Gate to Drain Charge
Q
GD
I
D
= 6.0
A
6
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 6.0
A, V
GS
= 0
V
0.80
V
Reverse Recovery Time
t
rr
I
F
= 6.0
A, V
GS
= 0
V
400
ns
Reverse Recovery Charge
Q
rr
di/dt = 50
A
/
s
1000
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
10%
90%
V
GS
(on)
10%
0
V
DS
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
Data Sheet G14886EJ2V0DS
3



PA1870
TYPICAL CHARACTERISTICS (T
A
= 25C)
30
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Der
ating F
actor - %
T
A
- Ambient Temperature - C
0
FORWARD BIAS SAFE OPERATING AREA
10.0
100.0
I
D
- Drain Current - A
1.0
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.1
0.01
10 m
s
100 ms
DC
1 ms
PW
= 10
s
R
DS(on)
Limited
(@V
GS
=
4.5 V)
I
D(pulse)
I
D(DC)
Single Pulse
P
D
(FET1) : P
D
(FET2) = 1 : 1
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0.1
0
0.4
0.5
0.2
0.3
10
0
25
15
5
20
V
GS
= 2.5 V
V
GS
= 4.0 V
V
GS
= 4.5 V
10
1
0.1
0.01
0.001
0.0001
0.00001
0
0.5
1
1.5
2
2.5
100
25C
75C
V
GS
- Gate to Source Voltage - V
-
25C
V
DS
= 10 V
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
T
A
= 125C
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1mA
-
50
50
100
0
150
1.5
1
0.5
1
10
100
0.1
V
DS
= 10 V
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
1
10
0.1
0.01
0.01
100
75C
125C
25C
T
A
=
-
25C
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
5
Data Sheet G14886EJ2V0DS
4



PA1870
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
T
A
= 125C
75C
-
25C
25C
40
30
20
10
V
GS
= 2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
T
A
= 125C
75C
-
25C
25C
30
20
10
0
V
GS
= 4.0 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
T
A
= 125C
75C
-
25C
25C
30
20
10
0
V
GS
= 4.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
I
D
= 3.0 A
-
50
0
50
100
150
10
20
30
R
DS (on)
- Drain to Source On-state Resistance - m
V
GS
= 2.5 V
4.5 V
4.0 V
0
0
20
10
30
40
50
2
4
6
8
10
12
R
DS (on)
- Drain to Source On-state Resistance - m
V
GS
- Gate to Source Voltage - V
I
D
= 3.0 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.1
100
1000
10000
1
10
100
f = 1 MHz
C
iss
C
rss
C
oss
Data Sheet G14886EJ2V0DS
5



PA1870
0.1
1
10
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
100
1000
10
SWITCHING CHARACTERISTICS
V
DD
= 10 V
V
GS(on)
= 4 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
0.01
0.1
1
10
100
0.4
0.6
0.8
1
1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
- Source to Drain Current - A
V
F(S-D)
- Body Diode Forward Voltage - V
V
GS
= 0V
Q
g
- Gate Charge - nC
0
1
3
5
6
7
8
9
10
4
2
DYNAMIC INPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
0
4
2
3
1
6
5
V
DD
= 16 V
10 V
I
D
= 6.0 A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(ch-A)
- Transient Thermal Resistance -

C/
W
10
0.1
1
100
1000
1
1 m
10 m
100 m
10
100
1000
Single Pulse
Mounted on Ceramic Board of
50 cm x 1.1 mm
P
D
(FET1) : P
D
(FET2) = 1 : 1
2
62.5C/W
5