2001
MOS FIELD EFFECT TRANSISTOR
PA1872
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
G15622EJ1V0DS00 (1st edition)
Date Published
December 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The
PA1872 is a switching device which can be
driven directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 13.0 m
MAX. (V
GS
= 4.5 V, I
D
= 5.0 A)
R
DS(on)2
= 13.5 m
MAX. (V
GS
= 4.0 V, I
D
= 5.0 A)
R
DS(on)3
= 15.5 m
MAX. (V
GS
= 3.1 V, I
D
= 5.0 A)
R
DS(on)4
= 18.0 m
MAX. (V
GS
= 2.5 V, I
D
= 5.0 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA1872GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
12
V
Drain Current (DC) (T
A
= 25C)
I
D(DC)
10
A
Drain Current (pulse)
Note1
I
D(pulse)
80
A
Total Power Dissipation (2 unit)
Note2
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Notes 1. PW
10
s, Duty Cycle
1%
2. Mounted on ceramic substrate of 5000
mm
2
x 1.1
mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
1
4
8
5
6.4 0.2
4.4 0.1
1.0 0.2
0.145
0.055
0.1
1
: Drain1
2, 3
: Source1
4
: Gate1
5
: Gate2
6, 7
: Source2
8
: Drain2
0.8 MAX.
3.15 0.15
3.0 0.1
0.65
0.10 M
0.27
+0.03
0.08
0.25
0.5
3
+5
3
0.6
+0.15
0.1
1.2 MAX.
0.10.05
1.00.05
EQUIVALENT CIRCUIT
Source2
Body
Diode
Gate
Protection
Diode
Gate2
Drain2
Source1
Body
Diode
Gate
Protection
Diode
Gate1
Drain1
Data Sheet G15622EJ1V0DS
2
PA1872
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20
V, V
GS
= 0
V
10
A
Gate Leakage Current
I
GSS
V
GS
= 12
V, V
DS
= 0
V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1.0 mA
0.5
1.0
1.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 5.0
A
5.0
S
R
DS(on)1
V
GS
= 4.5
V, I
D
= 5.0
A
8.0
10.0
13.0
m
R
DS(on)2
V
GS
= 4.0
V, I
D
= 5.0
A
8.5
10.5
13.5
m
R
DS(on)3
V
GS
= 3.1
V, I
D
= 5.0
A
9.0
11.5
15.5
m
Drain to Source On-state Resistance
R
DS(on)4
V
GS
= 2.5
V, I
D
= 5.0
A
10.0
13.5
18.0
m
Input Capacitance
C
iss
V
DS
= 10
V
1200
pF
Output Capacitance
C
oss
V
GS
= 0
V
370
pF
Reverse Transfer Capacitance
C
rss
f = 1.0
MHz
270
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10
V, I
D
= 5.0
A
60
ns
Rise Time
t
r
V
GS
= 4.0
V
350
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
450
ns
Fall Time
t
f
640
ns
Total Gate Charge
Q
G
V
DD
= 16
V
15
nC
Gate to Source Charge
Q
GS
V
GS
= 4.0 V
2.0
nC
Gate to Drain Charge
Q
GD
I
D
= 10
A
8.0
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 10
A, V
GS
= 0
V
0.83
V
Reverse Recovery Time
t
rr
I
F
= 10
A, V
GS
= 0
V
470
ns
Reverse Recovery Charge
Q
rr
di/dt = 50
A
/
s
990
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet G15622EJ1V0DS
3
PA1872
TYPICAL CHARACTERISTICS (T
A
= 25C)
30
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Der
ating F
actor - %
T
A
- Ambient Temperature -
C
0
FORWARD BIAS SAFE OPERATING AREA
10
100
I
D
- Drain Current - A
1
V
DS
- Drain to Source Voltage - V
1000
100
10
1
0.1
0.1
0.01
100 ms
100 s
PW = 10 s
DC
10 ms
1 ms
I
D
(
DC
)
Single Pulse
P
D
(FET1) : P
D
(FET2) = 1:1
I
D
(pulse)
(V
GS
=
4.5 V)
R
DS(on)
Limited
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0.0
5
0
15
20
10
25
0.1
0.2
0.3
0.4
30
35
3.1 V
V
GS
= 4.5 V
4.0 V
2.5 V
Pulsed
0.01
0.001
0.0001
0.00001
0.5
0.0
1.0
1.5
2.0
100
10
1
0.1
75C
T
A
= 125C
V
GS
- Gate to Sorce Voltage - V
25C
-
25C
V
DS
=
10 V
TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
FORWARD
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
=
10 V
I
D
= 1 mA
-
50
50
100
0
150
1.5
1.0
0.5
1
10
100
0.1
V
DS
= 10 V
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
1
10
0.1
0.01
0.01
100
-
25 C
T
A
= 25 C
75 C
125 C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Data Sheet G15622EJ1V0DS
4
PA1872
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.01
0.1
1
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
T
A
= 125
C
75
C
25
C
-
25
C
V
GS
= 2.5 V
25
20
15
10
5
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.01
0.1
1
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
T
A
= 125
C
75
C
25
C
-
25
C
V
GS
= 3.1 V
25
20
15
10
5
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.01
0.1
1
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
20
15
10
5
V
GS
= 4.0 V
T
A
= 125
C
75
C
25
C
-
25
C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.01
0.1
1
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
20
15
10
5
V
GS
= 4.5 V
T
A
= 125
C
75
C
25
C
-
25
C
20
15
10
5
-
50
0
50
100
150
R
DS (on)
- Drain to Source On-state Resistance - m
T
ch
- Channel Temperature -
C
I
D
= 5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
3.1 V
4.0 V
4.5 V
V
GS
= 2.5 V
0
2
4
6
8
10
12
30
25
20
15
10
5
R
DS (on)
- Drain to Source On-state Resistance - m
V
GS
- Gate to Source Voltage - V
I
D
= 5.0 A
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Data Sheet G15622EJ1V0DS
5
PA1872
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.1
100
1000
10000
1
10
100
f = 1 MHz
V
GS
= 0 V
C
iss
C
rss
C
oss
1
0.1
10
100
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1000
100
10
SWITCHING CHARACTERISTICS
V
DD
= 10 V
V
GS
= 4.0 V
R
G
= 10
t
r
t
f
t
d (off)
t
d (on)
1
0
2
3
4
5
0
4
8
12
20
16
Q
G
- Gate Charge - nC
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
= 10 A
V
DD
= 16 V
10 V
0.01
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
- Diode Forward Current - A
V
F(S-D)
- Source to Drain Voltage - V
V
GS
= 0 V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(ch-A)
- Transient Thermal Resistance -
C/
W
Single Pulse
P
D
(FET1) : P
D
(FET2) = 1:1
0.01
0.001
0.1
1
10
1000
100
10
0.1
1
1000
100
Mounted on Ceramic Board of 50 cm
2
x 1.1 mm
62.5C/W
Mounted on FR-4 Board of 25 cm
2
x 1.6 mm
125C/W
Data Sheet G15622EJ1V0DS
6
PA1872
[MEMO]
Data Sheet G15622EJ1V0DS
7
PA1872
[MEMO]
PA1872
M8E 00. 4
The information in this document is current as of December, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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