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confirm that this is the latest version.
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MOS FIELD EFFECT TRANSISTOR
PA1872B
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16742EJ1V0DS00 (1st edition)
Date Published April 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The
PA1872B is a switching device, which can be driven
directly by a 2.5 V power source.
The
PA1872B features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 13.0 m
MAX. (V
GS
= 4.5 V, I
D
= 5.0 A)
R
DS(on)2
= 13.5 m
MAX. (V
GS
= 4.0 V, I
D
= 5.0 A)
R
DS(on)3
= 15.5 m
MAX. (V
GS
= 3.1 V, I
D
= 5.0 A)
R
DS(on)4
= 18.0 m
MAX. (V
GS
= 2.5 V, I
D
= 5.0 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA1872BGR-9JG Power
TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20.0 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
12.0 V
Drain Current (DC)
Note 1
I
D(DC)
10.0 A
Drain Current (pulse)
Note 2
I
D(pulse)
80.0 A
Total Power Dissipation
Note 1
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Notes 1. Mounted on ceramic board of 50 cm
2
x 1.1
mm
2. PW
10
s, Duty Cycle 1%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1
4
8
5
6.4 0.2
4.4 0.1
1.0 0.2
0.145
0.055
0.1
0.8 MAX.
3.15 0.15
3.0 0.1
0.65
0.10 M
0.27
+0.03
0.08
0.25
0.5
3
+5
3
0.6
+0.15
0.1
1.2 MAX.
0.10.05
1.00.05
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
EQUIVALENT CIRCUIT
Source2
Body
Diode
Gate
Protection
Diode
Gate2
Drain2
Source1
Body
Diode
Gate
Protection
Diode
Gate1
Drain1
Data Sheet G16742EJ1V0DS
2
PA1872B
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20.0
V, V
GS
= 0
V
1.0
A
Gate Leakage Current
I
GSS
V
GS
= 12.0
V, V
DS
= 0
V
10.0
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10.0
V, I
D
= 1.0
mA
0.50 1.00 1.50 V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10.0
V, I
D
= 5.0
A 5
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 4.5
V, I
D
= 5.0
A 8.0
10.0
13.0
m
R
DS(on)2
V
GS
= 4.0
V, I
D
= 5.0
A 8.5
10.5
13.5
m
R
DS(on)3
V
GS
= 3.1
V, I
D
= 5.0
A 9.0
11.0
15.5
m
R
DS(on)4
V
GS
= 2.5
V, I
D
= 5.0
A
10.0 13.0 18.0 m
Input Capacitance
C
iss
V
DS
= 10.0
V
945
pF
Output Capacitance
C
oss
V
GS
= 0
V
220
pF
Reverse Transfer Capacitance
C
rss
f = 1.0
MHz
160
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10.0
V, I
D
= 5.0
A
47
ns
Rise Time
t
r
V
GS
= 4.0
V
315
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
255
ns
Fall Time
t
f
330 ns
Total Gate Charge
Q
G
V
DD
= 16.0
V
10.0
nC
Gate to Source Charge
Q
GS
V
GS
= 4.0
V
2.5
nC
Gate to Drain Charge
Q
GD
I
D
= 10.0
A
4.5
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 10.0
A, V
GS
= 0
V
0.83
V
Reverse Recovery Time
t
rr
I
F
= 10.0
A, V
GS
= 0
V
240
ns
Reverse Recovery Charge
Q
rr
di/dt = 50
A/
s
220
nC
Note Pulsed: PW
350
s, Duty Cycle 2%
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet G16742EJ1V0DS
3
PA1872B
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT
-
Pe
rcentage of Rated
P
o
we
r -
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
C
P
T
-
Total Powe
r Diss
ipation
-
W
0
0.5
1
1.5
2
2.5
0
25
50
75
100
125
150
175
Mounted on ceramic board of
50 cm
2
x 1.1 mm, 2 units
Mounted on FR-4 board of
25 cm
2
x 1.6 mm, 2 units
T
A
- Ambient Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Dr
ain Cur
r
ent
- A
0.01
0.1
1
10
100
1000
0.1
1
10
100
100 ms
10 ms
I
D(DC)
PW = 10
s
R
DS(on)
Limited
(at V
GS
= 4.5 V)
Single pulse
Mounted on ceramic board of
50 cm
2
x 1.1 mm
P
D
(FET1) : P
D
(FET2) = 1:1
DC (2units)
1 ms
100
s
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
c
h
-
A
)
- Transient
Ther
mal Resista
n
ce -
C/W
0.1
1
10
100
1000
Mounted on ceramic board of
50 cm
2
x 1.1 mm
Single pulse
P
D
(FET1) : P
D
(FET2) = 1:1
Mounted on FR-4 board of
25 cm
2
x 1.6 mm
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
Data Sheet G16742EJ1V0DS
4
PA1872B
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD
TRANSFER
CHARACTERISTICS
I
D
- Dr
ain Current
- A
0
10
20
30
40
0
0.1
0.2
0.3
0.4
0.5
Pulsed
2.5 V
V
GS
= 4.5 V
4.0 V
3.1 V
V
DS
- Drain to Source Voltage - V
I
D
- Dr
ain Current
- A
0.001
0.01
0.1
1
10
100
0.5
1
1.5
2
2.5
V
DS
= 10.0 V
Pulsed
T
A
= 125C
75C
25C
-25C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(o
ff
)
- Gate C
u
t
-
off
Voltage - V
0.5
1
1.5
-50
0
50
100
150
V
DS
= 10.0 V
I
D
= 1.0 mA
T
ch
- Channel Temperature -
C
|
y
fs
| -
For
w
ard
T
r
ans
fe
r
Admittan
ce - S
0.1
1
10
100
0.01
0.1
1
10
V
DS
= 10.0 V
Pulsed
T
A
=
-25C
25C
75C
125C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS
(o
n
)
- Drai
n to
S
ource
On-stat
e
Re
s
i
sta
n
ce - m
0
10
20
30
40
0.1
1
10
100
V
GS
= 4.5 V
Pulsed
T
A
= 125C
75C
25C
-25C
I
D
- Drain Current - A
R
DS
(o
n
)
- Drai
n to
S
ource
On-stat
e
Re
s
i
sta
n
ce - m
0
10
20
30
40
0.1
1
10
100
T
A
= 125C
75C
25C
-25C
V
GS
= 4.0 V
Pulsed
I
D
- Drain Current - A
Data Sheet G16742EJ1V0DS
5
PA1872B
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS
(on)
- Drain t
o
So
urce On-s
tate Re
sis
t
ance
- m
0
10
20
30
40
0.1
1
10
100
V
GS
= 3.1 V
Pulsed
T
A
= 125C
75C
25C
-25C
I
D
- Drain Current - A
R
DS
(on)
- Drain t
o
So
urce On-s
tate Re
sis
t
ance
- m
0
10
20
30
40
0.1
1
10
100
V
GS
= 2.5 V
Pulsed
T
A
= 125C
75C
25C
-25C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS
(o
n
)
- Drai
n to
S
ource
On-sta
te Re
s
i
sta
n
ce - m
0
10
20
30
40
0
2
4
6
8
10
12
I
D
= 5.0 A
Pulsed
V
GS
- Gate to Source Voltage - V
R
DS
(o
n
)
- Drai
n to
S
ource
On-sta
te Re
s
i
sta
n
ce - m
0
10
20
30
40
-50
0
50
100
150
I
D
= 5.0 A
Pulsed
V
GS
= 2.5 V
3.1 V
4.0 V
4.5 V
T
ch
- Channel Temperature - C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
C
is
s
, C
os
s
, C
rs
s
- Ca
p
a
cita
nce - pF
10
100
1000
10000
0.1
1
10
100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(
o
f
f
)
, t
f
-
S
w
i
t
c
h
ing Ti
me - ns
10
100
1000
0.1
1
10
V
DD
= 10.0 V
V
GS
= 4.0 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
I
D
- Drain Current - A
Data Sheet G16742EJ1V0DS
6
PA1872B
DYNAMIC INPUT CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
V
GS
- Gate to
So
ur
c
e
Voltage
-
V
0
1
2
3
4
5
0
2
4
6
8
10
12
I
D
= 10.0 A
V
DD
= 4.0 V
10.0 V
16.0 V
Q
G
- Gate Charge - nC
I
F
-
Di
ode Fo
rwa
r
d
Curren
t
-
A
0.01
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
V
GS
= 0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
PA1872B
The information in this document is current as of April, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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