2002
MOS FIELD EFFECT TRANSISTOR
PA2701GR
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.G15714EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP(K)
Printed in Japan
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confirm that this is the latest version.
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availability and additional information.
The mark
!
shows major revised points.
DESCRIPTION
The
PA2701GR is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
applications of notebook computers.
FEATURES
Low on-state resistance
R
DS(on)1
= 7.5 m
MAX. (V
GS
= 10 V, I
D
= 7.0 A)
R
DS(on)2
= 11.6 m
MAX. (V
GS
= 4.5 V, I
D
= 7.0 A)
Low C
iss
: C
iss
= 1200 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
PA2701GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC)
I
D(DC)
14
A
Drain Current (pulse)
Note1
I
D(pulse)
56
A
Total Power Dissipation (T
A
= 25C)
Note2
P
T
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Single Avalanche Current
Note3
I
AS
14
A
Single Avalanche Energy
Note3
E
AS
19.6
mJ
Notes 1. PW
10
s, Duty Cycle
1%
2. Mounted on ceramic substrate of 1200 mm
2
x 2.2 mm
3. Starting T
ch
= 25C, V
DD
= 15 V, R
G
= 25
, L = 100
H, V
GS
= 20
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is extemally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1.27
0.12 M
6.0 0.3
4.4
0.40
+0.10
0.05
0.78 MAX.
0.05 MIN.
1.8 MAX.
1.44
0.8
0.5 0.2
0.15
+0.10
0.05
5.37 MAX.
0.10
1
4
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8 ; Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet G15714EJ2V0DS
2
PA2701GR
ELECTRICAL CHARACTERISTICS (T
A
= 25C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
20 V, V
DS
= 0 V
10
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 7.0 A
7
14
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 7.0 A
6.2
7.5
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 7.0 A
8.7
11.6
m
R
DS(on)3
V
GS
= 4.0 V, I
D
= 7.0 A
10.3
13.7
m
Input Capacitance
C
iss
V
DS
= 10 V
1200
pF
Output Capacitance
C
oss
V
GS
= 0 V
500
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
160
pF
Turn-on Delay Time
t
d(on)
V
DD
= 15 V, I
D
= 7.0 A
10
ns
Rise Time
t
r
V
GS
= 10 V
13
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
44
ns
Fall Time
t
f
11
ns
Total Gate Charge
Q
G
V
DD
= 15 V
12
nC
Gate to Source Charge
Q
GS
V
GS
= 5 V
4
nC
Gate to Drain Charge
Q
GD
I
D
= 14 A
6
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 14 A, V
GS
= 0 V
0.8
1.2
V
Reverse Recovery Time
t
rr
I
F
= 14 A, V
GS
= 0 V
32
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
27
nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet G15714EJ2V0DS
3
PA2701GR
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
A
- Ambient Temperature - C
dT - Percentage of Rated Power - %
0
40
20
60
100
140
80
120
160
120
100
80
60
40
20
T
A
- Ambient Temperature - C
P
T
- Total Power Dissipation - W
0
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Mounted on ceramic
substrate of
1200 mm
2.2 mm
2
2.8
2.4
2.0
1.6
0.8
1.2
0.4
0
FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
1
0.1
0.01
100
10
0.01
0.1
1
10
T
A
= 25C
Single Pulse
100
I
D(pulse) =
56 A
I
D(DC) =
14 A
PW = 1 ms
10 ms
100 ms
Po
wer Dissipation Limited
R
DS(on)
Limited
(V
GS
= 10 V)
Remark Mounted on ceramicsubstrate of
1200 mm
2
x 2.2 mm
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
C
/ W
100
0.1
1
10
0.1 1
10
100
1000
0.001
0.01
R
th(ch-A)
= 62.5C/W
Mounted on ceramic substrate of
1200 mm
2.2 mm
Single Pulse
Channel to Ambient
2
!
Data Sheet G15714EJ2V0DS
4
PA2701GR
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Pulsed
1
0
2
3
4
5
1
0.1
0.01
10
100
V
DS
= 10 V
T
A
= 150C
-
25C
75C
25C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0.2 0.3 0.4
0.1
0
0
20
60
40
80
10
50
30
70
0.5 0.6
0.8 0.9 1.0
0.7
V
GS
= 10 V
4.5 V
4.0 V
Pulsed
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
0.01
0.1
1
10
100
10
100
0.1
1
Pulsed
V
DS
= 10 V
T
A
= 150C
75C
25C
-
25C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - m
4
0
8
12
2
6
10
14
16
20
18
Pulsed
20
18
16
14
12
10
8
6
4
2
0
I
D
= 7.0 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
1
0.1
30
15
10
5
0
10
100
Pulsed
V
GS
= 4.0 V
4.5 V
10 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
1
2
3
-
50
0
50
100
150
-
25
25
75
125
0
Data Sheet G15714EJ2V0DS
5
PA2701GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
R
DS(on)
- Drain to Source On-state Resistance - m
-
50
-
25
0
0
5
10
15
20
50
100
150
25
75
125
175
Pulsed
4.5 V
10 V
V
GS
= 4 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
0
1.2
V
SD
- Source to Drain Voltage - V
0.2
0.4
0.6
0.8
Pulsed
0.01
0.1
1
10
100
V
GS
= 0 V
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
100
1000
10000
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
rss
C
oss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
1
1
0.1
100
10
100
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
t
f
t
r
t
d(on)
t
d(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
1
0.1
10
1
10
100
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
8
0
0
0
2
4
6
8
1
3
5
7
10
20
30
40
5
15
25
35
16
4
12
20
6
14
2
10
18
I
D
= 14 A
V
DD
= 24 V
15 V
6 V
V
DS
V
GS
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