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Электронный компонент: UPD44324094F5-E40-EQ2

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MOS INTEGRATED CIRCUIT
PD44324084, 44324094, 44324184, 44324364
36M-BIT DDRII SRAM
4-WORD BURST OPERATION
Document No. M16781EJ1V0DS00 (1st edition)
Date Published October 2004 NS CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
2003
Description
The
PD44324084 is a 4,194,304-word by 8-bit, the
PD44324094 is a 4,194,304-word by 9-bit, the
PD44324184 is a
2,097,152-word by 18-bit and the
PD44324364 is a 1,048,576-word by 36-bit synchronous double data rate static RAM
fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
The
PD44324084,
PD44324094,
PD44324184 and
PD44324364 integrate unique synchronous peripheral circuitry
and a burst counter. All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K
and /K.
These products are suitable for application which require synchronous operation, high speed, low voltage, high density
and wide bit configuration.
These products are packaged in 165-pin PLASTIC FBGA.
Features
1.8 0.1 V power supply and HSTL I/O
DLL circuitry for wide output data valid window and future frequency scaling
Pipelined double data rate operation
Common data input/output bus
Four-tick burst for reduced address frequency
Two input clocks (K and /K) for precise DDR timing at clock rising edges only
Two output clocks (C and /C) for precise flight time
and clock skew matching-clock and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability with
s restart
User programmable impedance output
Fast clock cycle time : 3.3 ns (300 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG boundary scan

2
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
Ordering Information
Part number
Cycle
Clock
Organization Core Supply
I/O
Package
Time Frequency
(word
x
bit)
Voltage
Interface
ns MHz
V
PD44324084F5-E33-EQ2
Note
3.3
300
4 M x 8-bit
1.8 0.1
HSTL
165-pin PLASTIC
PD44324084F5-E40-EQ2
4.0
250
FBGA (13 x 15)
PD44324084F5-E50-EQ2 5.0
200
PD44324094F5-E33-EQ2
Note
3.3
300
4 M x 9-bit
PD44324094F5-E40-EQ2 4.0
250
PD44324094F5-E50-EQ2 5.0
200
PD44324184F5-E33-EQ2
Note
3.3
300
2 M x 18-bit
PD44324184F5-E40-EQ2 4.0
250
PD44324184F5-E50-EQ2 5.0
200
PD44324364F5-E33-EQ2
Note
3.3
300
1M x 36-bit
PD44324364F5-E40-EQ2 4.0
250
PD44324364F5-E50-EQ2 5.0
200
Note Under development
3
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
Pin Configurations
/
indicates active low signal.
165-pin PLASTIC FBGA (13 x 15)
(Top View)
[
PD44324084F5-EQ2]
1 2 3 4 5 6 7 8 9 10
11
A /CQ V
SS
A R,
/W
/NW1
/K NC /LD A A CQ
B
NC NC NC A NC K /NW0 A NC NC
DQ3
C NC NC NC V
SS
A NC A V
SS
NC NC NC
D NC NC NC V
SS
V
SS
V
SS
V
SS
V
SS
NC NC NC
E NC NC DQ4 V
DD
Q V
SS
V
SS
V
SS
V
DD
Q NC NC DQ2
F NC NC NC V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC NC
G NC NC DQ5 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC NC
H /DLL V
REF
V
DD
Q V
DD
Q V
DD
V
SS
V
DD
V
DD
Q V
DD
Q V
REF
ZQ
J NC NC NC V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC DQ1 NC
K NC NC NC V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC NC
L NC DQ6 NC V
DD
Q V
SS
V
SS
V
SS
V
DD
Q NC NC DQ0
M NC NC NC V
SS
V
SS
V
SS
V
SS
V
SS
NC NC NC
N NC NC NC V
SS
A A A V
SS
NC NC NC
P
NC
NC
DQ7
A A C A A NC
NC
NC
R
TDO
TCK A A A /C A A A
TMS
TDI
A
: Address inputs
TMS
: IEEE 1149.1 Test input
DQ0 to DQ7
: Data inputs / outputs
TDI
: IEEE 1149.1 Test input
/LD
: Synchronous load
TCK
: IEEE 1149.1 Clock input
R, /W
: Read Write input
TDO
: IEEE 1149.1 Test output
/NW0, /NW1
: Nibble Write data select
V
REF
: HSTL input reference input
K, /K
: Input clock
V
DD
: Power Supply
C, /C
: Output clock
V
DD
Q
: Power Supply
CQ, /CQ
: Echo clock
V
SS
:
Ground
ZQ
: Output impedance matching
NC
: No connection
/DLL
: DLL disable
Remarks 1. Refer to Package Drawing for the index mark.
2. 2A and 7A are expansion addresses: 2A for 72Mb and 7A for 144Mb.
4
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
165-pin PLASTIC FBGA (13 x 15)
(Top View)
[
PD44324094F5-EQ2]
1 2 3 4 5 6 7 8 9 10
11
A /CQ V
SS
A R,
/W
NC /K NC /LD A A CQ
B
NC NC NC A NC K /BW0 A NC NC
DQ4
C NC NC NC V
SS
A NC A V
SS
NC NC NC
D NC NC NC V
SS
V
SS
V
SS
V
SS
V
SS
NC NC NC
E NC NC DQ5 V
DD
Q V
SS
V
SS
V
SS
V
DD
Q NC NC DQ3
F NC NC NC V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC NC
G NC NC DQ6 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC NC
H /DLL V
REF
V
DD
Q V
DD
Q V
DD
V
SS
V
DD
V
DD
Q V
DD
Q V
REF
ZQ
J NC NC NC V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC DQ2 NC
K NC NC NC V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC NC
L NC DQ7 NC V
DD
Q V
SS
V
SS
V
SS
V
DD
Q NC NC DQ1
M NC NC NC V
SS
V
SS
V
SS
V
SS
V
SS
NC NC NC
N NC NC NC V
SS
A A A V
SS
NC NC NC
P
NC
NC
DQ8
A A C A A NC
NC
DQ0
R
TDO
TCK A A A /C A A A
TMS
TDI
A
: Address inputs
TMS
: IEEE 1149.1 Test input
DQ0 to DQ8
: Data inputs / outputs
TDI
: IEEE 1149.1 Test input
/LD
: Synchronous load
TCK
: IEEE 1149.1 Clock input
R, /W
: Read Write input
TDO
: IEEE 1149.1 Test output
/BW0
: Byte Write data select
V
REF
: HSTL input reference input
K, /K
: Input clock
V
DD
: Power Supply
C, /C
: Output clock
V
DD
Q
: Power Supply
CQ, /CQ
: Echo clock
V
SS
:
Ground
ZQ
: Output impedance matching
NC
: No connection
/DLL
: DLL disable
Remarks 1. Refer to Package Drawing for the index mark.
2. 2A and 7A are expansion addresses: 2A for 72Mb and 7A for 144Mb.
5
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
165-pin PLASTIC FBGA (13 x 15)
(Top View)
[
PD44324184F5-EQ2]
1 2 3 4 5 6 7 8 9 10
11
A /CQ V
SS
A R,
/W
/BW1
/K NC /LD A A CQ
B
NC
DQ9
NC A NC K /BW0 A NC NC
DQ8
C NC NC NC V
SS
A A0 A1 V
SS
NC DQ7 NC
D NC NC DQ10 V
SS
V
SS
V
SS
V
SS
V
SS
NC NC NC
E NC NC DQ11 V
DD
Q V
SS
V
SS
V
SS
V
DD
Q NC NC DQ6
F NC DQ12 NC V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC DQ5
G NC NC DQ13 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC NC
H /DLL V
REF
V
DD
Q V
DD
Q V
DD
V
SS
V
DD
V
DD
Q V
DD
Q V
REF
ZQ
J NC NC NC V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC DQ4 NC
K NC NC DQ14 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC DQ3
L NC DQ15 NC V
DD
Q V
SS
V
SS
V
SS
V
DD
Q NC NC DQ2
M NC NC NC V
SS
V
SS
V
SS
V
SS
V
SS
NC DQ1 NC
N NC NC DQ16 V
SS
A A A V
SS
NC NC NC
P
NC
NC
DQ17
A A C A A NC
NC
DQ0
R
TDO
TCK A A A /C A A A
TMS
TDI
A0, A1, A
: Address inputs
TMS
: IEEE 1149.1 Test input
DQ0 to DQ17
: Data inputs / outputs
TDI
: IEEE 1149.1 Test input
/LD
: Synchronous load
TCK
: IEEE 1149.1 Clock input
R, /W
: Read Write input
TDO
: IEEE 1149.1 Test output
/BW0, /BW1
: Byte Write data select
V
REF
: HSTL input reference input
K, /K
: Input clock
V
DD
: Power Supply
C, /C
: Output clock
V
DD
Q
: Power Supply
CQ, /CQ
: Echo clock
V
SS
:
Ground
ZQ
: Output impedance matching
NC
: No connection
/DLL
: DLL disable
Remarks 1. Refer to Package Drawing for the index mark.
2. 2A and 7A are expansion addresses: 2A for 72Mb and 7A for 144Mb.
6
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
165-pin PLASTIC FBGA (13 x 15)
(Top View)
[
PD44324364F5-EQ2]
1 2 3 4 5 6 7 8 9 10
11
A /CQ V
SS
A R,
/W
/BW2
/K
/BW1
/LD A V
SS
CQ
B
NC DQ27
DQ18 A /BW3 K /BW0 A NC NC DQ8
C NC NC DQ28 V
SS
A A0 A1 V
SS
NC DQ17
DQ7
D NC DQ29 DQ19 V
SS
V
SS
V
SS
V
SS
V
SS
NC NC DQ16
E NC NC DQ20 V
DD
Q V
SS
V
SS
V
SS
V
DD
Q NC DQ15 DQ6
F NC DQ30 DQ21 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC DQ5
G NC DQ31 DQ22 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC DQ14
H /DLL V
REF
V
DD
Q V
DD
Q V
DD
V
SS
V
DD
V
DD
Q V
DD
Q V
REF
ZQ
J NC NC DQ32 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC DQ13 DQ4
K NC NC DQ23 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC DQ12 DQ3
L NC DQ33 DQ24 V
DD
Q V
SS
V
SS
V
SS
V
DD
Q NC NC DQ2
M NC NC DQ34 V
SS
V
SS
V
SS
V
SS
V
SS
NC DQ11
DQ1
N NC DQ35 DQ25 V
SS
A A A V
SS
NC NC DQ10
P
NC
NC
DQ26
A A C A A NC
DQ9
DQ0
R
TDO
TCK A A A /C A A A
TMS
TDI
A0, A1, A
: Address inputs
TMS
: IEEE 1149.1 Test input
DQ0 to DQ35
: Data inputs / outputs
TDI
: IEEE 1149.1 Test input
/LD
: Synchronous load
TCK
: IEEE 1149.1 Clock input
R, /W
: Read Write input
TDO
: IEEE 1149.1 Test output
/BW0 to /BW3
: Byte Write data select
V
REF
: HSTL input reference input
K, /K
: Input clock
V
DD
: Power Supply
C, /C
: Output clock
V
DD
Q
: Power Supply
CQ, /CQ
: Echo clock
V
SS
:
Ground
ZQ
: Output impedance matching
NC
: No connection
/DLL
: DLL disable
Remarks 1. Refer to Package Drawing for the index mark.
2. 2A and 10A are expansion addresses: 10A for 72Mb and 2A for 144Mb.
7
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
Pin Identification
Symbol Description
A0
A1
A
Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times around the
rising edge of K. All transactions operate on a burst of four words (two clock periods of bus activity). A0 and A1
are used as the lowest two address bits for BURST READ and BURST WRITE operations permitting a random
burst start address on x18 and x36 devices. These inputs are ignored when device is deselected or once
BURST operation is in progress.
DQ0 to DQxx Synchronous Data IOs: Input data must meet setup and hold times around the rising edges of K and /K. Output
data is synchronized to the respective C and /C data clocks or to K and /K if C and /C are tied to HIGH.
x8 device uses DQ0 to DQ7.
x9 device uses DQ0 to DQ8.
x18 device uses DQ0 to DQ17.
x36 device uses DQ0 to DQ35.
/LD
Synchronous Load: This input is brought LOW when a bus cycle sequence is to be defined. This definition
includes address and read/write direction. All transactions operate on a burst of 4 data (two clock periods of bus
activity).
R, /W
Synchronous Read/Write Input: When /LD is LOW, this input designates the access type (READ when R, /W is
HIGH, WRITE when R, /W is LOW) for the loaded address. R, /W must meet the setup and hold times around
the rising edge of K.
/BWx
/NWx
Synchronous Byte Writes (Nibble Writes on x8): When LOW these inputs cause their respective byte or nibble
to be registered and written during WRITE cycles. These signals must meet setup and hold times around the
rising edges of K and /K for each of the two rising edges comprising the WRITE cycle. See Pin Configurations
for signal to data relationships.
K, /K
Input Clock: This input clock pair registers address and control inputs on the rising edge of K, and registers data
on the rising edge of K and the rising edge of /K. /K is ideally 180 degrees out of phase with K. All synchronous
inputs must meet setup and hold times around the clock rising edges.
C, /C
Output Clock: This clock pair provides a user controlled means of tuning device output data. The rising edge of
/C is used as the output timing reference for first and third output data. The rising edge of C is used as the
output reference for second and fourth output data. Ideally, /C is 180 degrees out of phase with C. C and /C
may be tied HIGH to force the use of K and /K as the output reference clocks instead of having to provide C and
/C clocks. If tied HIGH, C and /C must remain HIGH and not be toggled during device operation.
CQ, /CQ
Synchronous Echo Clock Outputs. The rising edges of these outputs are tightly matched to the synchronous
data outputs and can be used as a data valid indication. These signals run freely and do not stop when Q
tristates.
ZQ
Output Impedance Matching Input: This input is used to tune the device outputs to the system data bus
impedance. DQ and CQ output impedance are set to 0.2 x RQ, where RQ is a resistor from this bump to
ground. This pin cannot be connected directly to GND or left unconnected.
/DLL
DLL Disable: When LOW, this input causes the DLL to be bypassed for stable low frequency operation.
TMS
TDI
IEEE 1149.1 Test Inputs: 1.8V I/O levels. These balls may be left Not Connected if the JTAG function is not
used in the circuit.
TCK
IEEE 1149.1 Clock Input: 1.8V I/O levels. This pin must be tied to V
SS
if the JTAG function is not used in the
circuit.
TDO
IEEE 1149.1 Test Output: 1.8V I/O level.
V
REF
HSTL Input Reference Voltage: Nominally V
DD
Q/2. Provides a reference voltage for the input buffers.
V
DD
Power Supply: 1.8V nominal. See DC Characteristics and Operating Conditions for range.
V
DD
Q
Power Supply: Isolated Output Buffer Supply. Nominally 1.5V. 1.8V is also permissible. See DC Characteristics
and Operating Conditions for range.
V
SS
Power Supply: Ground
NC
No Connect: These signals are internally connected and appear in the JTAG scan chain as the logic level
applied to the ball sites. These signals may be connected to ground to improve package heat dissipation.
8
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
Block Diagram
2 : 1
MUX
0
1
/A0'
A0'
/A0'
A0'
0
1
Input
Register
E
/K
R, /W
Input
Register
E
Write address
Register
E
K
R, /W
Register
E
Output control
Logic
/C
C
Address
Register
E
/LD
Address
A0''
A0'''
Compare
Output Buffer
ZQ
DQ
Output Enable
Register
C
Burst
Logic
D1
D0
Q1
Q0
A1
A0
CLK
A0'
A1'
WRITE Register
Memory
Array
WRITE Driver
Sense Amps
Output Register
A0'
CLK
K
E
A0'''
R
/W
9
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
Power-on Sequence
The following two timing charts show the recommended power-on sequence, i.e., when starting the clock after
V
DD
/V
DD
Q stable and when starting the clock before V
DD
/V
DD
Q stable.
1. Clock starts after V
DD
/V
DD
Q stable
V
DD
/V
DD
Q
V
DD
/V
DD
Q Stable (<
0.1 V DC per 50 ns)
Clock Start
1,024 cycles or more
Stable Clock
Start
Normal Operation
Clock
2. Clock starts before V
DD
/V
DD
Q stable
V
DD
/V
DD
Q
V
DD
/V
DD
Q Stable (<
0.1 V DC per 50 ns)
Clock Start
1,024 cycles or more
Stable Clock
30 ns (MIN.)
DLL Reset or DLL Off
Start
Normal Operation
Clock
10
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
Burst Sequence
Linear Burst Sequence Table
[
PD44324184,
PD44324364]
A1, A0
A1, A0
A1, A0
A1, A0
External Address
0, 0
0, 1
1, 0
1, 1
1st Internal Burst Address
0, 1
1, 0
1, 1
0, 0
2nd Internal Burst Address
1, 0
1, 1
0, 0
0, 1
3rd Internal Burst Address
1, 1
0, 0
0, 1
1, 0
Truth Table
Operation
/LD
R,
/W
CLK
DQ
WRITE cycle
L
L
L
H
Data in
Load address, input write data on two
Input data
D(A1)
D(A2)
D(A3)
D(A4)
consecutive K and /K rising edge
Input clock
K(t+1)
/K(t+1)
K(t+2)
/K(t+2)
READ cycle
L
H
L
H
Data out
Load address, read data on two
Output data
Q(A1)
Q(A2)
Q(A3)
Q(A4)
consecutive C and /C rising edge
Output clock
/C(t+1)
C(t+2)
/C(t+2)
C(t+3)
NOP (No operation)
H
X
L
H
High-Z
STANDBY(Clock stopped)
X
X
Stopped
Previous state
Remarks 1. H : High level, L : Low level,
: don't care, : rising edge.
2. Data inputs are registered at K and /K rising edges. Data outputs are delivered at C and /C rising edges
except if C and /C are HIGH then Data outputs are delivered at K and /K rising edges.
3. All control inputs in the truth table must meet setup/hold times around the rising edge (LOW to HIGH) of
K. All control inputs are registered during the rising edge of K.
4. This device contains circuitry that will ensure the outputs will be in high impedance during power-up.
5. Refer to state diagram and timing diagrams for clarification.
6. A1 refers to the address input during a WRITE or READ cycle. A2, A3 and A4 refer to the next internal
burst address in accordance with the linear burst sequence.
7. It is recommended that K = /K = C = /C when clock is stopped. This is not essential but permits most
rapid restart by overcoming transmission line charging symmetrically.
11
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
Byte Write Operation
[
PD44324084]
Operation K
/K
/NW0
/NW1
Write DQ0 to DQ7
L
H
0 0
L
H
0
0
Write DQ0 to DQ3
L
H
0 1
L
H
0
1
Write DQ4 to DQ7
L
H
1 0
L
H
1
0
Write nothing
L
H
1 1
L
H
1
1
Remark H : High level, L : Low level,
: rising edge.
[
PD44324094]
Operation K
/K
/BW0
Write DQ0 to DQ8
L
H
0
L
H
0
Write nothing
L
H
1
L
H
1
Remark H : High level, L : Low level,
: rising edge.
[
PD44324184]
Operation K
/K
/BW0
/BW1
Write DQ0 to DQ17
L
H
0 0
L
H
0
0
Write DQ0 to DQ8
L
H
0 1
L
H
0
1
Write DQ9 to DQ17
L
H
1 0
L
H
1
0
Write nothing
L
H
1 1
L
H
1
1
Remark H : High level, L : Low level,
: rising edge.

[
PD44324364]
Operation
K
/K
/BW0 /BW1 /BW2 /BW3
Write DQ0 to DQ35
L
H
0 0 0 0
L
H 0 0 0 0
Write DQ0 to DQ8
L
H
0 1 1 1
L
H 0 1 1 1
Write DQ9 to DQ17
L
H
1 0 1 1
L
H 1 0 1 1
Write DQ18 to DQ26
L
H
1 1 0 1
L
H 1 1 0 1
Write DQ27 to DQ35
L
H
1 1 1 0
L
H 1 1 1 0
Write nothing
L
H
1 1 1 1
L
H 1 1 1 1
Remark H : High level, L : Low level,
: rising edge.
12
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
Bus Cycle State Diagram
READ DOUBLE
Count = Count + 2
WRITE DOUBLE
Count = Count + 2
Power UP
Write
NOP
Supply voltage provided
LOAD NEW
ADDRESS
Count = 0
NOP
ADVANCE ADDRESS
BY TWO
ADVANCE ADDRESS
BY TWO
Load, Count = 4
Read
Load, Count = 4
Always
Count = 2
Always
Count = 2
Load
NOP,
Count = 4
NOP,
Count = 4

Remarks 1.
A0 and A1 are internally advanced in accordance with the burst order table.
Bus cycle is terminated after burst count = 4.
2. State transitions: L = (/LD = LOW); /L = (/LD = HIGH); R = (/R, W = HIGH); W = (/R, W = LOW).
3. State machine control timing sequence is controlled by K.
13
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
Electrical Specifications
Absolute Maximum Ratings
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Supply voltage
V
DD
0.5
+2.5
V
Output supply voltage
V
DD
Q
0.5
V
DD
V
Input voltage
V
IN
0.5
V
DD
+ 0.5 (2.5 V MAX.)
V
Input / Output voltage
V
I/O
0.5
V
DD
Q
+ 0.5 (2.5 V MAX.)
V
Operating ambient temperature
T
A
0
70
C
Storage temperature
T
stg
55
+125
C

Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.

Recommended DC Operating Conditions (T
A
= 0 to 70
C)
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Note
Supply voltage
V
DD
1.7
1.9
V
Output supply voltage
V
DD
Q
1.4
V
DD
V
1
High level input voltage
V
IH (DC)
V
REF
+ 0.1
V
DD
Q
+ 0.3
V
1, 2
Low level input voltage
V
IL (DC)
0.3
V
REF
0.1
V
1, 2
Clock input voltage
V
IN
0.3
V
DD
Q
+ 0.3
V
1, 2
Reference voltage
V
REF
0.68
0.95
V
Notes 1. During normal operation, V
DD
Q must not exceed V
DD
.
2. Power-up: V
IH
V
DD
Q + 0.3 V and V
DD
1.7 V and V
DD
Q
1.4 V for t 200 ms

Recommended AC Operating Conditions (T
A
= 0 to 70
C)
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Note
High level input voltage
V
IH (AC)
V
REF
+ 0.2
V
1
Low level input voltage
V
IL (AC)
V
REF
0.2
V
1
Note 1. Overshoot: V
IH (AC)
V
DD
+ 0.7 V for t
TKHKH/2
Undershoot:
V
IL (AC)
0.5 V for t TKHKH/2
Control input signals may not have pulse widths less than TKHKL (MIN.) or operate at cycle rates less than
TKHKH (MIN.).
14
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
DC Characteristics (T
A
= 0 to 70C, V
DD
= 1.8 0.1 V)
Parameter Symbol Test
condition
MIN.
TYP. MAX. Unit
Note
x8,
x9
x18
x36
Input leakage current
I
LI
2
+2
A
I/O leakage current
I
LO
2
+2
A
Operating supply current
I
DD
V
IN
V
IL
or V
IN
V
IH
, E33
750 1,050
1,200 mA
(Read Write cycle)
I
I/O
= 0 mA
E40
650 900 1,000
Cycle = MAX.
E50
550 750 850
Standby supply current
I
SB1
V
IN
V
IL
or V
IN
V
IH
, E33
550
mA
(NOP)
I
I/O
= 0 mA
E40
500
Cycle = MAX.
E50
400
High level output voltage
V
OH(Low)
|I
OH
|
0.1 mA
V
DD
Q
0.2
V
DD
Q V
3,
4
V
OH
Note1
V
DD
Q/20.12 V
DD
Q/2+0.12 V
3,
4
Low level output voltage
V
OL(Low)
I
OL
0.1 mA
V
SS
0.2 V
3,
4
V
OL
Note2
V
DD
Q/20.12 V
DD
Q/2+0.12 V
3,
4
Notes 1. Outputs are impedance-controlled. | I
OH
| = (V
DD
Q/2)/(RQ/5) for values of 175
RQ 350 .
2. Outputs are impedance-controlled. I
OL
= (V
DD
Q/2)/(RQ/5) for values of 175
RQ 350 .
3. AC load current is higher than the shown DC values.
4. HSTL outputs meet JEDEC HSTL Class I and Class II standards.

Capacitance (T
A =
25
C, f = 1MHz)
Parameter Symbol
Test
conditions
MIN.
TYP.
MAX.
Unit
Input capacitance
C
IN
V
IN
= 0 V
4
5
pF
Input / Output capacitance
C
I/O
V
I/O
= 0 V
6
7
pF
Clock Input capacitance
C
clk
V
clk
= 0 V
5
6
pF
Remark These parameters are periodically sampled and not 100% tested.
15
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
AC Characteristics (T
A
= 0 to 70
C, V
DD
= 1.8 0.1 V)

AC Test Conditions

Input waveform (Rise / Fall time
0.3 ns)
0.75 V
0.75 V
Test Points
1.25 V
0.25 V

Output
waveform
V
DD
Q / 2
V
DD
Q / 2
Test Points


Output load condition
Figure 1. External load at test
V
DD
Q / 2
0.75 V
50
Z
O
= 50
250
SRAM
V
REF
ZQ
16
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
Read and Write Cycle
Parameter Symbol
-E33 -E40 -E50
Unit Note
(300 MHz)
(250 MHz)
(200 MHz)
MIN. MAX. MIN. MAX. MIN. MAX.
Clock
Average Clock cycle time (K, /K, C, /C) TKHKH
3.3 8.4 4.0 8.4 5.0 8.4
ns 1
Clock phase jitter (K, /K, C, /C)
TKC var
0.2 0.2 0.2
ns 2
Clock HIGH time (K, /K, C, /C)
TKHKL
1.32 1.6 2.0
ns
Clock LOW time (K, /K, C, /C)
TKLKH
1.32 1.6 2.0
ns
Clock to /clock (K
/K., C/C.) TKH
/KH
1.49 1.8 2.2
ns
Clock to /clock (/K
K., /CC.) T
/KHKH
1.49 1.8 2.2
ns
Clock to data clock 250 to 300 MHz
TKHCH
0
1.45
ns
(K
C., /K/C.)
200 to 250 MHz
0 1.8 0 1.8
167 to 200 MHz
0 2.3 0 2.3 0 2.3
133 to 167 MHz
0 2.8 0 2.8 0 2.8
< 133 MHz
0 3.55 0 3.55 0 3.55
DLL lock time (K, C)
TKC lock
1,024 1,024 1,024
Cycle
3
K static to DLL reset
TKC reset
30 30 30
ns
Output Times
C, /C HIGH to output valid
TCHQV
0.45 0.45 0.45
ns
C, /C HIGH to output hold
TCHQX
0.45
0.45
0.45
ns
C, /C HIGH to echo clock valid
TCHCQV
0.45 0.45 0.45
ns
C, /C HIGH to echo clock hold
TCHCQX
0.45
0.45
0.45
ns
CQ, /CQ HIGH to output valid
TCQHQV
0.27 0.3 0.35
ns 4
CQ, /CQ HIGH to output hold
TCQHQX
0.27
0.3
0.35
ns 4
C HIGH to output High-Z
TCHQZ
0.45 0.45 0.45
ns
C HIGH to output Low-Z
TCHQX1
0.45
0.45
0.45
ns
Setup Times
Address valid to K rising edge
TAVKH
0.4 0.5 0.6
ns 5
Synchronous load input (/LD),
TIVKH
0.4 0.5 0.6
ns 5
read write input (R, /W) valid to
K rising edge
Data inputs and write data select
TDVKH
0.3 0.35 0.4 ns 5
inputs (/BWx, /NWx) valid to
K, /K rising edge
Hold Times
K rising edge to address hold
TKHAX
0.4 0.5 0.6
ns 5
K rising edge to
TKHIX
0.4 0.5 0.6
ns 5
synchronous load input (/LD),
read write input (R, /W) hold
K, /K rising edge to data inputs and
TKHDX
0.3 0.35 0.4 ns 5
write data select inputs (/BWx, /NWx)
hold
17
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
Notes 1. The device will operate at clock frequencies slower than TKHKH(MAX.).
2. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.
3. V
DD
slew rate must be less than 0.1 V DC per 50 ns for DLL lock retention.
DLL lock time begins once V
DD
and input clock are stable.
It is recommended that the device is kept inactive during these cycles.
4. Echo clock is very tightly controlled to data valid / data hold. By design, there is a
0.1 ns variation from
echo clock to data. The data sheet parameters reflect tester guardbands and test setup variations.
5. This is a synchronous device. All addresses, data and control lines must meet the specified setup
and hold times for all latching clock edges.
Remarks 1. This parameter is sampled.
2. Test conditions as specified with the output loading as shown in AC Test Conditions
unless otherwise noted.
3. Control input signals may not be operated with pulse widths less than TKHKL (MIN.).
4. If C, /C are tied HIGH, K, /K become the references for C, /C timing parameters.
5.
V
DD
Q is 1.5 V DC.
18
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
Read and Write Timing
TKHKH
TKHAX
Q01
Q03
K
/LD
Address
DQ
Q02
/K
2
4
6
8
10
12
13
1
3
5
7
9
11
R, /W
Qx2
Q04
Q12
Q11
Q14
Q13
D21
D23
D22
D24
D32
D31
D34
D33
Q41
TKH/KH
T/KHKH
CQ
/CQ
C
/C
TKHCH
TCHQX1
TCHQV
TCHQV
TCHQX
TCHQX
TCQHQX
TCQHQV
TCHQZ
TKHKL TKLKH TKHKH TKH/KH
TDVKH
TKHDX
TDVKH
TKHDX
NOP
READ
(burst of 4)
READ
(burst of 4)
NOP
NOP
WRITE
(burst of 4)
WRITE
(burst of 4)
READ
(burst of 4)
TKHKL
TKLKH
TKHIX
TKLKH
TCHCQV
TCHCQV
TCHCQX
TCHCQX
A0
A1
A2
A4
A3
T/KHKH
TIVKH
TAVKH
TKHCH
Remarks 1. Q01 refers to output from address A0.
Q02 refers to output from the next internal burst address following A0, etc.
2. Outputs are disable (high impedance) one clock cycle after a NOP.
3. The second NOP cycle is not necessary for correct device operation;
however, at high clock frequencies it may be required to prevent bus contention.
19
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
JTAG Specification
These products support a limited set of JTAG functions as in IEEE standard 1149.1.

Test Access Port (TAP) Pins
Pin name
Pin assignments
Description
TCK 2R
Test Clock Input. All input are captured on the rising edge of TCK and all outputs
propagate from the falling edge of TCK.
TMS 10R
Test Mode Select. This is the command input for the TAP controller state machine.
TDI
11R
Test Data Input. This is the input side of the serial registers placed between TDI and
TDO. The register placed between TDI and TDO is determined by the state of the TAP
controller state machine and the instruction that is currently loaded in the TAP instruction.
TDO
1R
Test Data Output. Output changes in response to the falling edge of TCK. This is the
output side of the serial registers placed between TDI and TDO.
Remark The device does not have TRST (TAP reset). The Test-Logic Reset state is entered while TMS is held high
for five rising edges of TCK. The TAP controller state is also reset on the SRAM POWER-UP.

JTAG DC Characteristics (T
A
= 0 to 70C, V
DD
= 1.8 0.1 V, unless otherwise noted)
Parameter Symbol Conditions MIN.
TYP.
MAX.
Unit
Note
JTAG Input leakage current
I
LI
0
V
V
IN
V
DD
5.0
+5.0
A
JTAG I/O leakage current
I
LO
0
V
V
IN
V
DD
Q, 5.0
+5.0
A
Outputs
disabled
JTAG input high voltage
V
IH
1.3
V
DD
+0.3 V
JTAG input low voltage
V
IL
0.3
+0.5 V
JTAG output high voltage
V
OH1
|
I
OHC
| = 100
A 1.6
V
V
OH2
|
I
OHT
| = 2 mA
1.4
V
JTAG output low voltage
V
OL1
I
OLC
= 100
A
0.2
V
V
OL2
I
OLT
= 2 mA
0.4
V
20
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
JTAG AC Test Conditions
Input waveform (Rise / Fall time
1 ns)
0.9 V
0.9 V
Test Points
1.8 V
0 V

Output
waveform
0.9 V
0.9 V
Test Points


Output
load
Figure 2. External load at test
TDO
Z
O
= 50
V
TT
= 0.9 V
20 pF
50
21
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
JTAG AC Characteristics (T
A
= 0 to 70
C)
Parameter Symbol Conditions
MIN.
TYP.
MAX.
Unit
Note
Clock
Clock cycle time
t
THTH
100
ns
Clock frequency
f
TF
10 MHz
Clock high time
t
THTL
40
ns
Clock low time
t
TLTH
40
ns
Output
time
TCK low to TDO unknown
t
TLOX
0
ns
TCK low to TDO valid
t
TLOV
20 ns
TDI valid to TCK high
t
DVTH
10
ns
TCK high to TDI invalid
t
THDX
10
ns
Setup
time
TMS setup time
t
MVTH
10
ns
Capture setup time
t
CS
10 ns
Hold
time
TMS hold time
t
THMX
10
ns
Capture hold time
t
CH
10
ns

JTAG Timing Diagram
t
THTH
t
TLOV
t
TLTH
t
THTL
t
MVTH
t
THDX
t
DVTH
t
THMX
TCK
TMS
TDI
TDO
t
TLOX
22
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
Scan Register Definition (1)
Register name
Description
Instruction register
The instruction register holds the instructions that are executed by the TAP controller when it is
moved into the run-test/idle or the various data register state. The register can be loaded when it is
placed between the TDI and TDO pins. The instruction register is automatically preloaded with the
IDCODE instruction at power-up whenever the controller is placed in test-logic-reset state.
Bypass register
The bypass register is a single bit register that can be placed between TDI and TDO. It allows serial
test data to be passed through the RAMs TAP to another device in the scan chain with as little delay
as possible.
ID register
The ID Register is a 32 bit register that is loaded with a device and vendor specific 32 bit code when
the controller is put in capture-DR state with the IDCODE command loaded in the instruction register.
The register is then placed between the TDI and TDO pins when the controller is moved into shift-DR
state.
Boundary register
The boundary register, under the control of the TAP controller, is loaded with the contents of the
RAMs I/O ring when the controller is in capture-DR state and then is placed between the TDI and
TDO pins when the controller is moved to shift-DR state. Several TAP instructions can be used to
activate the boundary register.
The Scan Exit Order tables describe which device bump connects to each boundary register
location. The first column defines the bit's position in the boundary register. The second column is
the name of the input or I/O at the bump and the third column is the bump number.
Scan Register Definition (2)
Register name
Bit size
Unit
Instruction register
3
bit
Bypass register
1
bit
ID register
32
bit
Boundary register
109
bit
ID Register Definition
Part number
Organization ID [31:28] vendor revision no.
ID [27:12] part no.
ID [11:1] vendor ID no.
ID [0] fix bit
PD44324084
4M x 8
XXXX
0000 0000 0100 0001
00000010000
1
PD44324094
4M x 9
XXXX
0000 0000 0100 0010
00000010000
1
PD44324184
2M x 18
XXXX
0000 0000 0100 0011
00000010000
1
PD44324364
1M x 36
XXXX
0000 0000 0100 0100
00000010000
1
23
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
SCAN Exit Order
Bit Signal
name
Bump
Bit Signal
name Bump
Bit Signal
name Bump
no. x8 x9 x18 x36 ID no. x8 x9 x18
x36
ID no. x8 x9 x18 x36 ID
1
/C
6R 37 NC NC NC NC 10D 73 NC NC NC NC 2C
2
C
6P 38 NC NC NC NC 9E 74 DQ4 DQ5
DQ11
DQ20 3E
3
A
6N 39 NC NC
DQ7 DQ17 10C 75 NC NC NC
DQ29
2D
4
A
7P 40 NC NC NC
DQ16 11D 76 NC NC NC NC 2E
5
A
7N 41 NC NC NC NC 9C 77 NC NC NC NC 1E
6
A
7R 42 NC NC NC NC 9D 78 NC NC DQ12
DQ30 2F
7
A
8R 43 DQ3 DQ4 DQ8 DQ8
11B 79 NC NC NC
DQ21 3F
8
A
8P 44 NC NC NC DQ7
11C 80 NC NC NC NC 1G
9
A
9R 45 NC NC NC NC 9B 81 NC NC NC NC 1F
10 NC DQ0
DQ0
DQ0
11P 46 NC NC NC NC 10B 82 DQ5 DQ6
DQ13
DQ22 3G
11 NC NC NC DQ9 10P 47
CQ
11A 83 NC NC NC
DQ31 2G
12 NC NC NC NC 10N 48 A A A V
SS
10A 84
/DLL
1H
13 NC NC NC NC 9P 49
A
9A 85 NC NC NC NC 1J
14 NC NC DQ1
DQ11 10M 50
A
8B 86 NC NC NC NC 2J
15 NC NC NC
DQ10 11N 51 A A A1 A1 7C 87 NC NC DQ14
DQ23 3K
16 NC NC NC NC 9M 52 NC NC A0 A0 6C 88 NC NC NC DQ32 3J
17 NC NC NC NC 9N 53
/LD
8A 89 NC NC NC NC 2K
18 DQ0
DQ1
DQ2
DQ2 11L 54 NC NC NC
/BW1
7A 90 NC NC NC NC 1K
19 NC NC NC DQ1
11M 55
/NW0 /BW0 /BW0 /BW0
7B 91 DQ6 DQ7
DQ15
DQ33 2L
20 NC NC NC NC 9L 56
K
6B 92 NC NC NC DQ24 3L
21 NC NC NC NC 10L 57
/K
6A 93 NC NC NC NC 1M
22 NC NC DQ3
DQ3 11K 58 NC NC NC
/BW3
5B 94 NC NC NC NC 1L
23 NC NC NC
DQ12 10K 59
/NW1 NC
/BW1 /BW2
5A 95 NC NC
DQ16
DQ25
3N
24 NC NC NC NC 9J 60
R,
/W
4A 96 NC NC NC DQ34 3M
25 NC NC NC NC 9K 61
A
5C 97 NC NC NC NC 1N
26 DQ1
DQ2
DQ4
DQ13 10J 62
A
4B 98 NC NC NC NC 2M
27 NC NC NC DQ4 11J 63
A
3A 99 DQ7 DQ8
DQ17
DQ26
3P
28 ZQ 11H
64 V
SS
2A 100 NC NC NC
DQ35 2N
29 NC NC NC NC 10G 65
/CQ
1A 101 NC NC NC NC 2P
30 NC NC NC NC 9G 66 NC NC DQ9 DQ27
2B 102 NC NC NC NC 1P
31 NC NC DQ5
DQ5
11F 67 NC NC NC
DQ18
3B 103
A
3R
32 NC NC NC DQ14 11G 68 NC NC NC NC 1C 104
A
4R
33 NC NC NC NC 9F 69 NC NC NC NC 1B 105
A
4P
34 NC NC NC NC 10F 70 NC NC
DQ10 DQ19
3D 106
A
5P
35 DQ2 DQ3 DQ6 DQ6 11E 71 NC NC NC DQ28
3C 107
A
5N
36 NC NC NC DQ15 10E 72 NC NC NC NC 1D 108
A
5R
109
Internal
24
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
JTAG Instructions
Instructions Description
EXTEST
The EXTEST instruction allows circuitry external to the component package to be tested. Boundary-
scan register cells at output pins are used to apply test vectors, while those at input pins capture test
results. Typically, the first test vector to be applied using the EXTEST instruction will be shifted into the
boundary scan register using the PRELOAD instruction. Thus, during the update-IR state of EXTEST,
the output drive is turned on and the PRELOAD data is driven onto the output pins.
IDCODE
The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in
capture-DR mode and places the ID register between the TDI and TDO pins in shift-DR mode. The
IDCODE instruction is the default instruction loaded in at power up and any time the controller is
placed in the test-logic-reset state.
BYPASS
The BYPASS instruction is loaded in the instruction register when the bypass register is placed
between TDI and TDO. This occurs when the TAP controller is moved to the shift-DR state. This
allows the board level scan path to be shortened to facilitate testing of other devices in the scan path.
SAMPLE / PRELOAD SAMPLE / PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE /
PRELOAD instruction is loaded in the instruction register, moving the TAP controller into the capture-
DR state loads the data in the RAMs input and DQ pins into the boundary scan register. Because the
RAM clock(s) are independent from the TAP clock (TCK) it is possible for the TAP to attempt to
capture the I/O ring contents while the input buffers are in transition (i.e., in a metastable state).
Although allowing the TAP to sample metastable input will not harm the device, repeatable results
cannot be expected. RAM input signals must be stabilized for long enough to meet the TAPs input
data capture setup plus hold time (t
CS
plus t
CH
). The RAMs clock inputs need not be paused for any
other TAP operation except capturing the I/O ring contents into the boundary scan register. Moving
the controller to shift-DR state then places the boundary scan register between the TDI and TDO pins.
SAMPLE-Z
If the SAMPLE-Z instruction is loaded in the instruction register, all RAM DQ pins are forced to an
inactive drive state (high impedance) and the boundary register is connected between TDI and TDO
when the TAP controller is moved to the shift-DR state.
JTAG Instruction Coding
IR2 IR1 IR0 Instruction Note
0 0 0 EXTEST
0 0 1 IDCODE
0 1 0 SAMPLE-Z 1
0 1 1 RESERVED
1
0
0
SAMPLE / PRELOAD
1 0 1 RESERVED
1 1 0 RESERVED
1 1 1 BYPASS
Note 1. TRISTATE all DQ pins and CAPTURE the pad values into a SERIAL SCAN LATCH.
25
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
TAP Controller State Diagram
Test-Logic-Reset
Run-Test / Idle
Select-DR-Scan
Capture-DR
Capture-IR
Shift-DR
Exit1-DR
Pause-DR
Exit2-DR
Update-DR
Update-IR
Exit2-IR
Pause-IR
Exit1-IR
Shift-IR
Select-IR-Scan
0
0
0
1
0
1
1
0
0
1
0
1
1
0
0
0
0
1
0
1
0
1
1
1
0
1
1
0
1
0
1
1

Disabling the Test Access Port
It is possible to use this device without utilizing the TAP. To disable the TAP Controller without interfering with normal
operation of the device, TCK must be tied to V
SS
to preclude mid level inputs.
TDI and TMS are designed so an undriven input will produce a response identical to the application of a logic 1, and
may be left unconnected. But they may also be tied to V
DD
through a 1 k
resistor.
TDO should be left unconnected.
26
Preliminary Da
ta
S
heet
M167
81E
J1V
0DS
PD44324084, 44324094,
44324184, 44324364
Test Logic Operation (Instruction Scan)
TCK
Controller
state
TDI
TMS
TDO
Test-Logic-Reset
Run-Test/Idle
Select-DR-Scan
Select-IR-Scan
Capture-IR
Shift-IR
Exit1-IR
Pause-IR
Exit2-IR
Shift-IR
Exit1-IR
Update-IR
Run-Test/Idle
IDCODE
Instruction
Register state
New Instruction
Output Inactive
27
Preliminary Da
ta
S
heet
M167
81E
J1V
0DS
PD44324084, 44324094,
44324184, 44324364
Test Logic (Data Scan)
Controller
state
TDI
TMS
TDO
Run-Test/Idle
Select-DR-Scan
Capture-DR
Shift-DR
Exit1-DR
Pause-DR
Exit2-DR
Shift-DR
Exit1-DR
Update-DR
Test-Logic-Reset
Instruction
Instruction
Register state
IDCODE
Run-Test/Idle
Select-DR-Scan
Select-IR-Scan
Output Inactive
TCK
28
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
Package Drawing
y1 S
S
y
S
A
A
B
S
S
A B
x
M
b
e
h
A1
A2
A
INDEX MARK
E
D
ZD
ZE
R P N M L K J H G F E D C B A
11
10
9
8
7
6
5
4
3
2
1
w
B
S
w
ITEM
MILLIMETERS
D
E
ZD
ZE
e
h
A
A1
A2
b
y
x
w
y1
13.00
15.00
1.50
0.50
1.00
0.60
1.40
0.40
1.00
0.50
0.08
0.08
0.15
0.20
This package drawing is a preliminary version. It may be changed in the future.
165-PIN PLASTIC FBGA (13x15)
29
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
Recommended Soldering Condition
Please consult with our sales offices for soldering conditions of these products.
Types of Surface Mount Devices
PD44324084F5-EQ2: 165-pin PLASTIC FBGA (13 x 15)
PD44324094F5-EQ2: 165-pin PLASTIC FBGA (13 x 15)
PD44324184F5-EQ2: 165-pin PLASTIC FBGA (13 x 15)
PD44324364F5-EQ2: 165-pin PLASTIC FBGA (13 x 15)
30
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
Revision History
Edition/ Page
Type
of Location
Description
Date This
Previous
revision
(Previous
edition
This edition)
edition
edition
1st edition/
Throughout Throughout
Modification
Preliminary Product Information
Oct. 2004
Preliminary Data sheet
Package
Code
F5-EQ1
F5-EQ2
Deletion
-E60 (167MHz)
p.2
p.2
Addition
Ordering
Information
"Note Under development" has been added to
-E33.
pp.3-6
pp.3-6
Pin Configurations
Remark 2 has been added
p.9
Power-on Sequence
Power-on sequence has been added
p.14
p.13
Modification DC Characteristics I
DD
(MAX.)
MAX.
Unit
MAX.
Unit
x8, x9 x18
x36
x8, x9 x18 x36
-E33 620 650 730
mA
-E33 750 1,050
1,200 mA
-E40 540 560 620
-E40 650 900 1,000
-E50 450 470 520
-E50 550 750 850
DC Characteristics I
SB1
(MAX.)
MAX.
Unit
MAX.
Unit
x8, x9 x18
x36
x8, x9 x18 x36
-E33
290
mA
-E33 550 mA
-E40
250
-E40 500
-E50
210
-E50 400
31
Preliminary Data Sheet
M16781EJ1V0DS
PD44324084, 44324094, 44324184, 44324364
1
2
3
4
VOLTAGE APPLICATION WAVEFORM AT INPUT PIN
Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the
CMOS device stays in the area between V
IL
(MAX) and V
IH
(MIN) due to noise, etc., the device may
malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed,
and also in the transition period when the input level passes through the area between V
IL
(MAX) and
V
IH
(MIN).
HANDLING OF UNUSED INPUT PINS
Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is
possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS
devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to V
DD
or GND
via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must
be judged separately for each device and according to related specifications governing the device.
PRECAUTION AGAINST ESD
A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as
much as possible, and quickly dissipate it when it has occurred. Environmental control must be
adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that
easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static
container, static shielding bag or conductive material. All test and measurement tools including work
benches and floors should be grounded. The operator should be grounded using a wrist strap.
Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for
PW boards with mounted semiconductor devices.
STATUS BEFORE INITIALIZATION
Power-on does not necessarily define the initial status of a MOS device. Immediately after the power
source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does
not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the
reset signal is received. A reset operation must be executed immediately after power-on for devices
with reset functions.
POWER ON/OFF SEQUENCE
In the case of a device that uses different power supplies for the internal operation and external
interface, as a rule, switch on the external power supply after switching on the internal power supply.
When switching the power supply off, as a rule, switch off the external power supply and then the
internal power supply. Use of the reverse power on/off sequences may result in the application of an
overvoltage to the internal elements of the device, causing malfunction and degradation of internal
elements due to the passage of an abnormal current.
The correct power on/off sequence must be judged separately for each device and according to related
specifications governing the device.
INPUT OF SIGNAL DURING POWER OFF STATE
Do not input signals or an I/O pull-up power supply while the device is not powered. The current
injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and
the abnormal current that passes in the device at this time may cause degradation of internal elements.
Input of signals during the power off state must be judged separately for each device and according to
related specifications governing the device.
NOTES FOR CMOS DEVICES
5
6
PD44324084, 44324094, 44324184, 44324364
The information in this document is current as of October, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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Descriptions of circuits, software and other related information in this document are provided for illustrative
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M8E 02. 11-1