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Электронный компонент: UPD44324095F5-E50-EQ2

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MOS INTEGRATED CIRCUIT
PD44324085, 44324095, 44324185, 44324365
36M-BIT DDRII SRAM SEPARATE I/O
2-WORD BURST OPERATION
Document No. M16782EJ1V0DS00 (1st edition)
Date Published October 2004 NS CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
2003
Description
The
PD44324085 is a 4,194,304-word by 8-bit, the
PD44324095 is a 4,194,304-word by 9-bit, the
PD44324185 is a
2,097,152-word by 18-bit and the
PD44324365 is a 1,048,576-word by 36-bit synchronous double data rate static RAM
fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
The
PD44324085,
PD44324095,
PD44324185 and
PD44324365 integrate unique synchronous peripheral circuitry
and a burst counter. All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K
and /K.
These products are suitable for application which require synchronous operation, high speed, low voltage, high density
and wide bit configuration.
These products are packaged in 165-pin PLASTIC FBGA.
Features
1.8 0.1 V power supply and HSTL I/O
DLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports
DDR read or write operation initiated each cycle
Pipelined double data rate operation
Separate data input/output bus
Two-tick burst for low DDR transaction size
Two input clocks (K and /K) for precise DDR timing at clock rising edges only
Two output clocks (C and /C) for precise flight time and clock skew matching-clock
and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability with
s restart
User programmable impedance output
Fast clock cycle time : 3.3 ns (300 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG boundary scan

2
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
Ordering Information
Part number
Cycle
Clock
Organization Core Supply
I/O
Package
Time Frequency
(word
x
bit)
Voltage
Interface
ns MHz
V
PD44324085F5-E33-EQ2
Note
3.3
300
4 M x 8-bit
1.8 0.1
HSTL
165-pin PLASTIC
PD44324085F5-E40-EQ2
4.0
250
FBGA (13 x 15)
PD44324085F5-E50-EQ2 5.0
200
PD44324095F5-E33-EQ2
Note
3.3
300
4 M x 9-bit
PD44324095F5-E40-EQ2 4.0
250
PD44324095F5-E50-EQ2 5.0
200
PD44324185F5-E33-EQ2
Note
3.3
300
2 M x 18-bit
PD44324185F5-E40-EQ2 4.0
250
PD44324185F5-E50-EQ2 5.0
200
PD44324365F5-E33-EQ2
Note
3.3
300
1M x 36-bit
PD44324365F5-E40-EQ2 4.0
250
PD44324365F5-E50-EQ2 5.0
200
Note Under development
3
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
Pin Configurations
/
indicates active low signal.
165-pin PLASTIC FBGA (13 x 15)
(Top View)
[
PD44324085F5-EQ2]
1 2 3 4 5 6 7 8 9 10
11
A /CQ V
SS
A R,
/W
/NW1
/K NC /LD A A CQ
B
NC NC NC A NC K /NW0 A NC NC Q3
C NC NC NC V
SS
A A A V
SS
NC NC D3
D
NC D4 NC V
SS
V
SS
V
SS
V
SS
V
SS
NC NC NC
E NC NC Q4 V
DD
Q V
SS
V
SS
V
SS
V
DD
Q NC D2 Q2
F NC NC NC V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC NC
G NC D5 Q5 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC NC
H /DLL V
REF
V
DD
Q V
DD
Q V
DD
V
SS
V
DD
V
DD
Q V
DD
Q V
REF
ZQ
J NC NC NC V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC Q1 D1
K NC NC NC V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC NC
L NC Q6 D6 V
DD
Q V
SS
V
SS
V
SS
V
DD
Q NC NC Q0
M NC NC NC V
SS
V
SS
V
SS
V
SS
V
SS
NC NC D0
N
NC D7 NC V
SS
A A A V
SS
NC NC NC
P
NC
NC
Q7 A A C A A NC
NC
NC
R
TDO
TCK A A A /C A A A
TMS
TDI
A
: Address inputs
TMS
: IEEE 1149.1 Test input
D0 to D7
: Data inputs
TDI
: IEEE 1149.1 Test input
Q0 to Q7
: Data outputs
TCK
: IEEE 1149.1 Clock input
/LD
: Synchronous load
TDO
: IEEE 1149.1 Test output
R, /W
: Read Write input
V
REF
: HSTL input reference input
/NW0, /NW1
: Nibble Write data select
V
DD
: Power Supply
K, /K
: Input clock
V
DD
Q
: Power Supply
C, /C
: Output clock
V
SS
:
Ground
CQ, /CQ
: Echo clock
NC
: No connection
ZQ
: Output impedance matching
/DLL
: DLL disable
Remarks 1. Refer to Package Drawing for the index mark.
2. 2A and 7A are expansion addresses: 2A for 72Mb and 7A for 144Mb.
4
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
165-pin PLASTIC FBGA (13 x 15)
(Top View)
[
PD44324095F5-EQ2]
1 2 3 4 5 6 7 8 9 10
11
A /CQ V
SS
A R,
/W
NC /K NC /LD A A CQ
B
NC NC NC A NC K /BW0 A NC NC Q4
C NC NC NC V
SS
A A A V
SS
NC NC D4
D
NC D5 NC V
SS
V
SS
V
SS
V
SS
V
SS
NC NC NC
E NC NC Q5 V
DD
Q V
SS
V
SS
V
SS
V
DD
Q NC D3 Q3
F NC NC NC V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC NC
G NC D6 Q6 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC NC
H /DLL V
REF
V
DD
Q V
DD
Q V
DD
V
SS
V
DD
V
DD
Q V
DD
Q V
REF
ZQ
J NC NC NC V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC Q2 D2
K NC NC NC V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC NC
L NC Q7 D7 V
DD
Q V
SS
V
SS
V
SS
V
DD
Q NC NC Q1
M NC NC NC V
SS
V
SS
V
SS
V
SS
V
SS
NC NC D1
N
NC D8 NC V
SS
A A A V
SS
NC NC NC
P
NC
NC
Q8 A A C A A NC
D0
Q0
R
TDO
TCK A A A /C A A A
TMS
TDI
A
: Address inputs
TMS
: IEEE 1149.1 Test input
D0 to D8
: Data inputs
TDI
: IEEE 1149.1 Test input
Q0 to Q8
: Data outputs
TCK
: IEEE 1149.1 Clock input
/LD
: Synchronous load
TDO
: IEEE 1149.1 Test output
R, /W
: Read Write input
V
REF
: HSTL input reference input
/BW0
: Byte Write data select
V
DD
: Power Supply
K, /K
: Input clock
V
DD
Q
: Power Supply
C, /C
: Output clock
V
SS
:
Ground
CQ, /CQ
: Echo clock
NC
: No connection
ZQ
: Output impedance matching
/DLL
: DLL disable
Remarks 1. Refer to Package Drawing for the index mark.
2. 2A and 7A are expansion addresses: 2A for 72Mb and 7A for 144Mb.
5
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
165-pin PLASTIC FBGA (13 x 15)
(Top View)
[
PD44324185F5-EQ2]
1 2 3 4 5 6 7 8 9 10
11
A /CQ V
SS
A R,
/W
/BW1
/K NC /LD A V
SS
CQ
B
NC Q9 D9 A NC K /BW0 A NC NC Q8
C NC NC D10 V
SS
A A A V
SS
NC Q7 D8
D NC D11 Q10 V
SS
V
SS
V
SS
V
SS
V
SS
NC NC D7
E NC NC Q11 V
DD
Q V
SS
V
SS
V
SS
V
DD
Q NC D6 Q6
F NC Q12 D12 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC Q5
G NC D13 Q13 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC NC D5
H /DLL V
REF
V
DD
Q V
DD
Q V
DD
V
SS
V
DD
V
DD
Q V
DD
Q V
REF
ZQ
J NC NC D14 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC Q4 D4
K NC NC Q14 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q NC D3 Q3
L NC Q15 D15 V
DD
Q V
SS
V
SS
V
SS
V
DD
Q NC NC Q2
M NC NC D16 V
SS
V
SS
V
SS
V
SS
V
SS
NC Q1 D2
N NC D17 Q16 V
SS
A A A V
SS
NC NC D1
P
NC
NC
Q17
A A C A A NC
D0
Q0
R
TDO
TCK A A A /C A A A
TMS
TDI
A
: Address inputs
TMS
: IEEE 1149.1 Test input
D0 to D17
: Data inputs
TDI
: IEEE 1149.1 Test input
Q0 to Q17
: Data outputs
TCK
: IEEE 1149.1 Clock input
/LD
: Synchronous load
TDO
: IEEE 1149.1 Test output
R, /W
: Read Write input
V
REF
: HSTL input reference input
/BW0, /BW1
: Byte Write data select
V
DD
: Power Supply
K, /K
: Input clock
V
DD
Q
: Power Supply
C, /C
: Output clock
V
SS
:
Ground
CQ, /CQ
: Echo clock
NC
: No connection
ZQ
: Output impedance matching
/DLL
: DLL disable
Remarks 1. Refer to Package Drawing for the index mark.
2. 2A and 10A are expansion addresses: 10A for 72Mb and 2A for 144Mb.
6
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
165-pin PLASTIC FBGA (13 x 15)
(Top View)
[
PD44324365F5-EQ2]
1 2 3 4 5 6 7 8 9 10
11
A /CQ V
SS
NC R,
/W
/BW2 /K /BW1
/LD A V
SS
CQ
B
Q27 Q18 D18 A /BW3 K /BW0 A D17 Q17 Q8
C D27 Q28 D19 V
SS
A A A V
SS
D16 Q7 D8
D D28 D20 Q19 V
SS
V
SS
V
SS
V
SS
V
SS
Q16 D15 D7
E Q29 D29 Q20 V
DD
Q V
SS
V
SS
V
SS
V
DD
Q Q15 D6 Q6
F Q30 Q21 D21 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q D14 Q14 Q5
G D30 D22 Q22 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q Q13 D13 D5
H /DLL V
REF
V
DD
Q V
DD
Q V
DD
V
SS
V
DD
V
DD
Q V
DD
Q V
REF
ZQ
J D31 Q31 D23 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q D12 Q4 D4
K Q32 D32 Q23 V
DD
Q V
DD
V
SS
V
DD
V
DD
Q Q12 D3 Q3
L Q33 Q24 D24 V
DD
Q V
SS
V
SS
V
SS
V
DD
Q D11 Q11 Q2
M
D33 Q34 D25 V
SS
V
SS
V
SS
V
SS
V
SS
D10 Q1 D2
N D34 D26 Q25 V
SS
A A A V
SS
Q10 D9 D1
P
Q35
D35
Q26
A A C A A Q9
D0
Q0
R
TDO
TCK A A A /C A A A
TMS
TDI
A
: Address inputs
TMS
: IEEE 1149.1 Test input
D0 to D35
: Data inputs
TDI
: IEEE 1149.1 Test input
Q0 to Q35
: Data outputs
TCK
: IEEE 1149.1 Clock input
/LD
: Synchronous load
TDO
: IEEE 1149.1 Test output
R, /W
: Read Write input
V
REF
: HSTL input reference input
/BW0 to /BW3
: Byte Write data select
V
DD
: Power Supply
K, /K
: Input clock
V
DD
Q
: Power Supply
C, /C
: Output clock
V
SS
:
Ground
CQ, /CQ
: Echo clock
NC
: No connection
ZQ
: Output impedance matching
/DLL
: DLL disable
Remarks 1. Refer to Package Drawing for the index mark.
2. 3A and 10A are expansion addresses: 3A for 72Mb and 10A for 144Mb.
7
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
Pin Identification
Symbol Description
A
Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times around the
rising edge of K. All transactions operate on a burst of two words (one clock period of bus activity). These
inputs are ignored when device is deselected.
D0 to Dxx
Synchronous Data Inputs: Input data must meet setup and hold times around the rising edges of K and /K
during WRITE operations. See Pin Configurations for ball site location of individual signals.
x8 device uses D0 to D7.
x9 device uses D0 to D8.
x18 device uses D0 to D17.
x36 device uses D0 to D35.
Q0 to Qxx
Synchronous Data Outputs: Output data is synchronized to the respective C and /C or to K and /K rising edges
if C and /C are tied HIGH. This bus operates in response to /R commands. See Pin Configurations for ball site
location of individual signals.
x8 device uses Q0 to Q7.
x9 device uses Q0 to Q8.
x18 device uses Q0 to Q17.
x36 device uses Q0 to Q35.
/LD
Synchronous Load: This input is brought LOW when a bus cycle sequence is to be defined. This definition
includes address and read/write direction. All transactions operate on a burst of 2 data (one clock period of bus
activity).
R, /W
Synchronous Read/Write Input: When /LD is LOW, this input designates the access type (READ when R, /W is
HIGH, WRITE when R, /W is LOW) for the loaded address. R, /W must meet the setup and hold times around
the rising edge of K.
/BWx
/NWx
Synchronous Byte Writes (Nibble Writes on x8): When LOW these inputs cause their respective byte or nibble
to be registered and written during WRITE cycles. These signals must meet setup and hold times around the
rising edges of K and /K for each of the two rising edges comprising the WRITE cycle. See Pin Configurations
for signal to data relationships.
K, /K
Input Clock: This input clock pair registers address and control inputs on the rising edge of K, and registers data
on the rising edge of K and the rising edge of /K. /K is ideally 180 degrees out of phase with K. All synchronous
inputs must meet setup and hold times around the clock rising edges.
C, /C
Output Clock: This clock pair provides a user controlled means of tuning device output data. The rising edge of
/C is used as the output timing reference for first output data. The rising edge of C is used as the output
reference for second output data. Ideally, /C is 180 degrees out of phase with C. C and /C may be tied HIGH to
force the use of K and /K as the output reference clocks instead of having to provide C and /C clocks. If tied
HIGH, C and /C must remain HIGH and not be toggled during device operation.
CQ, /CQ
Synchronous Echo Clock Outputs. The rising edges of these outputs are tightly matched to the synchronous
data outputs and can be used as a data valid indication. These signals run freely and do not stop when Q
tristates.
ZQ
Output Impedance Matching Input: This input is used to tune the device outputs to the system data bus
impedance. DQ and CQ output impedance are set to 0.2 x RQ, where RQ is a resistor from this bump to
ground. This pin cannot be connected directly to GND or left unconnected.
/DLL
DLL Disable: When LOW, this input causes the DLL to be bypassed for stable low frequency operation.
TMS
TDI
IEEE 1149.1 Test Inputs: 1.8V I/O levels. These balls may be left Not Connected if the JTAG function is not
used in the circuit.
TCK
IEEE 1149.1 Clock Input: 1.8V I/O levels. This pin must be tied to V
SS
if the JTAG function is not used in the
circuit.
TDO
IEEE 1149.1 Test Output: 1.8V I/O level.
V
REF
HSTL Input Reference Voltage: Nominally V
DD
Q/2. Provides a reference voltage for the input buffers.
V
DD
Power Supply: 1.8V nominal. See DC Characteristics and Operating Conditions for range.
V
DD
Q
Power Supply: Isolated Output Buffer Supply. Nominally 1.5V. 1.8V is also permissible. See DC Characteristics
and Operating Conditions for range.
V
SS
Power Supply: Ground
NC
No Connect: These signals are internally connected and appear in the JTAG scan chain as the logic level
applied to the ball sites. These signals may be connected to ground to improve package heat dissipation.
8
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
Block Diagram
[
PD44324085]
R, /W
/NW0
/NW1
/LD
K
/K
K
/LD
R, /W
K
ADDRESS
21
D0 to D7
Q0 to Q7
MUX
OUTPUT
REGISTER
/K
K
DATA
REGISTRY
& LOGIC
2
21
x 16
MEMORY
ARRAY
WRITE
DRIVER
SENSE
AMPS
OUTPUT
SELECT
OUTPUT
BUFFER
21
ADDRESS
REGISTRY
& LOGIC
WRITE
REGISTER
C, /C
OR
K, /K
CQ,
/CQ
8
16
16
16
8
2
[
PD44324095]
R, /W
/BW0
/LD
K
/K
K
/LD
R, /W
K
ADDRESS
21
D0 to D8
Q0 to Q8
MUX
OUTPUT
REGISTER
/K
K
DATA
REGISTRY
& LOGIC
2
21
x 18
MEMORY
ARRAY
WRITE
DRIVER
SENSE
AMPS
OUTPUT
SELECT
OUTPUT
BUFFER
21
ADDRESS
REGISTRY
& LOGIC
WRITE
REGISTER
C, /C
OR
K, /K
CQ,
/CQ
9
18
18
18
9
2
[
PD44324185]
R, /W
/BW0
/BW1
/LD
K
/K
K
/LD
R, /W
K
ADDRESS
20
D0 to D17
Q0 to Q17
MUX
OUTPUT
REGISTER
/K
K
DATA
REGISTRY
& LOGIC
2
20
x 36
MEMORY
ARRAY
WRITE
DRIVER
SENSE
AMPS
OUTPUT
SELECT
OUTPUT
BUFFER
20
ADDRESS
REGISTRY
& LOGIC
WRITE
REGISTER
C, /C
OR
K, /K
CQ,
/CQ
18
36
36
36
18
2
9
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
[
PD44324365]
R, /W
/BW0
/BW1
/LD
K
/K
K
/LD
R, /W
K
ADDRESS
19
D0 to D35
Q0 to Q35
MUX
OUTPUT
REGISTER
/K
K
DATA
REGISTRY
& LOGIC
2
19
x 72
MEMORY
ARRAY
WRITE
DRIVER
SENSE
AMPS
OUTPUT
SELECT
OUTPUT
BUFFER
19
ADDRESS
REGISTRY
& LOGIC
WRITE
REGISTER
C, /C
OR
K, /K
CQ,
/CQ
36
72
72
72
36
2
/BW2
/BW3
Power-on Sequence
The following two timing charts show the recommended power-on sequence, i.e., when starting the clock after
V
DD
/V
DD
Q stable and when starting the clock before V
DD
/V
DD
Q stable.
1. Clock starts after V
DD
/V
DD
Q stable
V
DD
/V
DD
Q
V
DD
/V
DD
Q Stable (<
0.1 V DC per 50 ns)
Clock Start
1,024 cycles or more
Stable Clock
Start
Normal Operation
Clock
2. Clock starts before V
DD
/V
DD
Q stable
V
DD
/V
DD
Q
V
DD
/V
DD
Q Stable (<
0.1 V DC per 50 ns)
Clock Start
1,024 cycles or more
Stable Clock
30 ns (MIN.)
DLL Reset or DLL Off
Start
Normal Operation
Clock
10
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
Truth Table
Operation
/LD R, /W
CLK
D or Q
WRITE cycle
L
L
L
H
Data in
Load address, input write data on two
Input data
D(A+0)
D(A+1)
consecutive K and /K rising edge
Input clock
K(t+1)
/K(t+1)
READ cycle
L
H
L
H
Data out
Load address, read data on two
Output data
Q(A+0)
Q(A+1)
consecutive C and /C rising edge
Output clock
/C(t+1)
C(t+2)
NOP (No operation)
H
X
L
H
High-Z
STANDBY(Clock stopped)
X
X
Stopped
Previous state
Remarks 1. H : High level, L : Low level,
: don't care, : rising edge.
2. Data inputs are registered at K and /K rising edges. Data outputs are delivered at C and /C rising edges
except if C and /C are HIGH then Data outputs are delivered at K and /K rising edges.
3. All control inputs in the truth table must meet setup/hold times around the rising edge (LOW to HIGH) of
K. All control inputs are registered during the rising edge of K.
4. This device contains circuitry that will ensure the outputs will be in high impedance during power-up.
5. Refer to state diagram and timing diagrams for clarification.
6. It is recommended that K = /K = C = /C when clock is stopped. This is not essential but permits most
rapid restart by overcoming transmission line charging symmetrically.
11
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
Byte Write Operation
[
PD44324085]
Operation K
/K
/NW0
/NW1
Write D0 to D7
L
H
0 0
L
H
0
0
Write D0 to D3
L
H
0 1
L
H
0
1
Write D4 to D7
L
H
1 0
L
H
1
0
Write nothing
L
H
1 1
L
H
1
1
Remark H : High level, L : Low level,
: rising edge.
[
PD44324095]
Operation K
/K
/BW0
Write D0 to D8
L
H
0
L
H
0
Write nothing
L
H
1
L
H
1
Remark H : High level, L : Low level,
: rising edge.
[
PD44324185]
Operation K
/K
/BW0
/BW1
Write D0 to D17
L
H
0 0
L
H
0
0
Write D0 to D8
L
H
0 1
L
H
0
1
Write D9 to D17
L
H
1 0
L
H
1
0
Write nothing
L
H
1 1
L
H
1
1
Remark H : High level, L : Low level,
: rising edge.

[
PD44324365]
Operation
K
/K
/BW0 /BW1 /BW2 /BW3
Write D0 to D35
L
H
0 0 0 0
L
H 0 0 0 0
Write D0 to D8
L
H
0 1 1 1
L
H 0 1 1 1
Write D9 to D17
L
H
1 0 1 1
L
H 1 0 1 1
Write D18 to D26
L
H
1 1 0 1
L
H 1 1 0 1
Write D27 to D35
L
H
1 1 1 0
L
H 1 1 1 0
Write nothing
L
H
1 1 1 1
L
H 1 1 1 1
Remark H : High level, L : Low level,
: rising edge.
12
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
Bus Cycle State Diagram
READ DOUBLE
Count = Count + 2
WRITE DOUBLE
Count = Count + 2
Power UP
Write
NOP
Supply voltage provided
LOAD NEW
ADDRESS
Count = 0
NOP
Load, Count = 2
Read
Load, Count = 2
Load
NOP,
Count = 2
NOP,
Count = 2
Remark State machine control timing sequence is controlled by K.
13
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
Electrical Specifications
Absolute Maximum Ratings
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Supply voltage
V
DD
0.5
+2.5
V
Output supply voltage
V
DD
Q
0.5
V
DD
V
Input voltage
V
IN
0.5
V
DD
+ 0.5 (2.5 V MAX.)
V
Input / Output voltage
V
I/O
0.5
V
DD
Q
+ 0.5 (2.5 V MAX.)
V
Operating ambient temperature
T
A
0
70
C
Storage temperature
T
stg
55
+125
C

Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.

Recommended DC Operating Conditions (T
A
= 0 to 70
C)
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Note
Supply voltage
V
DD
1.7
1.9
V
Output supply voltage
V
DD
Q
1.4
V
DD
V
1
High level input voltage
V
IH (DC)
V
REF
+ 0.1
V
DD
Q
+ 0.3
V
1, 2
Low level input voltage
V
IL (DC)
0.3
V
REF
0.1
V
1, 2
Clock input voltage
V
IN
0.3
V
DD
Q
+ 0.3
V
1, 2
Reference voltage
V
REF
0.68
0.95
V
Notes 1. During normal operation, V
DD
Q must not exceed V
DD
.
2. Power-up: V
IH
V
DD
Q + 0.3 V and V
DD
1.7 V and V
DD
Q
1.4 V for t 200 ms

Recommended AC Operating Conditions (T
A
= 0 to 70
C)
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Note
High level input voltage
V
IH (AC)
V
REF
+ 0.2
V
1
Low level input voltage
V
IL (AC)
V
REF
0.2
V
1
Note 1. Overshoot: V
IH (AC)
V
DD
+ 0.7 V for t
TKHKH/2
Undershoot:
V
IL (AC)
0.5 V for t TKHKH/2
Control input signals may not have pulse widths less than TKHKL (MIN.) or operate at cycle rates less than
TKHKH (MIN.).
14
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
DC Characteristics (T
A
= 0 to 70C, V
DD
= 1.8 0.1 V)
Parameter Symbol Test
condition
MIN.
TYP. MAX. Unit
Note
x8,
x9
x18
x36
Input leakage current
I
LI
2
+2
A
I/O leakage current
I
LO
2
+2
A
Operating supply current
I
DD
V
IN
V
IL
or V
IN
V
IH
, E33
750 1,050 1,200 mA
(Read Write cycle)
I
I/O
= 0 mA
E40
650
900 1,000
Cycle = MAX.
E50
550
750
850
Standby supply current
I
SB1
V
IN
V
IL
or V
IN
V
IH
, E33
550
mA
(NOP)
I
I/O
= 0 mA
E40
500
Cycle = MAX.
E50
400
High level output voltage
V
OH(Low)
|I
OH
|
0.1 mA
V
DD
Q
0.2
V
DD
Q V
3,
4
V
OH
Note1
V
DD
Q/20.12 V
DD
Q/2+0.12 V
3,
4
Low level output voltage
V
OL(Low)
I
OL
0.1 mA
V
SS
0.2 V
3,
4
V
OL
Note2
V
DD
Q/20.12 V
DD
Q/2+0.12 V
3,
4
Notes 1. Outputs are impedance-controlled. | I
OH
| = (V
DD
Q/2)/(RQ/5) for values of 175
RQ 350 .
2. Outputs are impedance-controlled. I
OL
= (V
DD
Q/2)/(RQ/5) for values of 175
RQ 350 .
3. AC load current is higher than the shown DC values.
4. HSTL outputs meet JEDEC HSTL Class I and Class II standards.

Capacitance (T
A =
25
C, f = 1MHz)
Parameter Symbol
Test
conditions
MIN.
TYP.
MAX.
Unit
Input capacitance
C
IN
V
IN
= 0 V
4
5
pF
Input / Output capacitance
C
I/O
V
I/O
= 0 V
6
7
pF
Clock Input capacitance
C
clk
V
clk
= 0 V
5
6
pF
Remark These parameters are periodically sampled and not 100% tested.
15
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
AC Characteristics (T
A
= 0 to 70
C, V
DD
= 1.8 0.1 V)

AC Test Conditions

Input waveform (Rise / Fall time
0.3 ns)
0.75 V
0.75 V
Test Points
1.25 V
0.25 V

Output
waveform
V
DD
Q / 2
V
DD
Q / 2
Test Points


Output load condition
Figure 1. External load at test
V
DD
Q / 2
0.75 V
50
Z
O
= 50
250
SRAM
V
REF
ZQ
16
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
Read and Write Cycle
Parameter Symbol
-E33 -E40 -E50
Unit Note
(300 MHz)
(250 MHz)
(200 MHz)
MIN. MAX. MIN. MAX. MIN. MAX.
Clock
Average Clock cycle time (K, /K, C, /C) TKHKH
3.3 8.4 4.0 8.4 5.0 8.4
ns 1
Clock phase jitter (K, /K, C, /C)
TKC var
0.2 0.2 0.2
ns 2
Clock HIGH time (K, /K, C, /C)
TKHKL
1.32 1.6 2.0
ns
Clock LOW time (K, /K, C, /C)
TKLKH
1.32 1.6 2.0
ns
Clock to /clock (K
/K., C/C.) TKH
/KH
1.49 1.8 2.2
ns
Clock to /clock (/K
K., /CC.) T
/KHKH
1.49 1.8 2.2
ns
Clock to data clock 250 to 300 MHz
TKHCH
0
1.45
ns
(K
C., /K/C.)
200 to 250 MHz
0 1.8 0 1.8
167 to 200 MHz
0 2.3 0 2.3 0 2.3
133 to 167 MHz
0 2.8 0 2.8 0 2.8
< 133 MHz
0 3.55 0 3.55 0 3.55
DLL lock time (K, C)
TKC lock
1,024 1,024 1,024
Cycle
3
K static to DLL reset
TKC reset
30 30 30
ns
Output Times
C, /C HIGH to output valid
TCHQV
0.45 0.45 0.45
ns
C, /C HIGH to output hold
TCHQX
0.45
0.45
0.45
ns
C, /C HIGH to echo clock valid
TCHCQV
0.45 0.45 0.45
ns
C, /C HIGH to echo clock hold
TCHCQX
0.45
0.45
0.45
ns
CQ, /CQ HIGH to output valid
TCQHQV
0.27 0.3 0.35
ns 4
CQ, /CQ HIGH to output hold
TCQHQX
0.27
0.3
0.35
ns 4
C HIGH to output High-Z
TCHQZ
0.45 0.45 0.45
ns
C HIGH to output Low-Z
TCHQX1
0.45
0.45
0.45
ns
Setup Times
Address valid to K rising edge
TAVKH
0.4 0.5 0.6
ns 5
Synchronous load input (/LD),
TIVKH
0.4 0.5 0.6
ns 5
read write input (R, /W) valid to
K rising edge
Data inputs and write data select
TDVKH
0.3 0.35 0.4 ns 5
inputs (/BWx, /NWx) valid to
K, /K rising edge
Hold Times
K rising edge to address hold
TKHAX
0.4 0.5 0.6
ns 5
K rising edge to
TKHIX
0.4 0.5 0.6
ns 5
synchronous load input (/LD),
read write input (R, /W) hold
K, /K rising edge to data inputs and
TKHDX
0.3 0.35 0.4 ns 5
write data select inputs (/BWx, /NWx)
hold
17
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
Notes 1. The device will operate at clock frequencies slower than TKHKH(MAX.).
2. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.
3. V
DD
slew rate must be less than 0.1 V DC per 50 ns for DLL lock retention.
DLL lock time begins once V
DD
and input clock are stable.
It is recommended that the device is kept inactive during these cycles.
4. Echo clock is very tightly controlled to data valid / data hold. By design, there is a
0.1 ns variation from
echo clock to data. The data sheet parameters reflect tester guardbands and test setup variations.
5. This is a synchronous device. All addresses, data and control lines must meet the specified setup
and hold times for all latching clock edges.
Remarks 1. This parameter is sampled.
2. Test conditions as specified with the output loading as shown in AC Test Conditions
unless otherwise noted.
3. Control input signals may not be operated with pulse widths less than TKHKL (MIN.).
4. If C, /C are tied HIGH, K, /K become the references for C, /C timing parameters.
5.
V
DD
Q is 1.5 V DC.
18
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
Read and Write Timing
K
Address
Data in
/K
2
4
6
8
1
3
5
7
TKH/KH
C
/C
TKHCH
NOP
READ
(burst of 2)
WRITE
(burst of 2)
TKHKL
TKLKH
Q01
Q11
Data out
Q02
Q12
/LD
R, /W
TKHCH
TKHKL
TKLKH
TKH/KH T/KHKH
TCHQX1
TCHQX
TCHQZ
D21
D31
D22
D32
TDVKH
TKHDX
TDVKH
TKHDX
TKHKH
TIVKH
TKHIX
TAVKH TKHAX
CQ
/CQ
TCQHQV
TCHQV
TCHCQX
TCHCQV
TCHCQX
TCHCQV
READ
(burst of 2)
READ
(burst of 2)
NOP
Qx2
Q41
Q42
TCHQX
TCHQV
WRITE
(burst of 2)
A0
A1
A2
A3
A4
T/KHKH
TKHKH
Remarks 1. Q01 refers to output from address A0+0.
Q02 refers to output from the next internal burst address following A0, i.e., A0+1.
2. Outputs are disable (high impedance) one clock cycle after a NOP.
3. In this example, if address A3=A4, data Q41=D31, Q42=D32.
Write data is forwarded immediately as read results.
19
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
JTAG Specification
These products support a limited set of JTAG functions as in IEEE standard 1149.1.

Test Access Port (TAP) Pins
Pin name
Pin assignments
Description
TCK 2R
Test Clock Input. All input are captured on the rising edge of TCK and all outputs
propagate from the falling edge of TCK.
TMS 10R
Test Mode Select. This is the command input for the TAP controller state machine.
TDI
11R
Test Data Input. This is the input side of the serial registers placed between TDI and
TDO. The register placed between TDI and TDO is determined by the state of the TAP
controller state machine and the instruction that is currently loaded in the TAP instruction.
TDO
1R
Test Data Output. Output changes in response to the falling edge of TCK. This is the
output side of the serial registers placed between TDI and TDO.
Remark The device does not have TRST (TAP reset). The Test-Logic Reset state is entered while TMS is held high
for five rising edges of TCK. The TAP controller state is also reset on the SRAM POWER-UP.

JTAG DC Characteristics (T
A
= 0 to 70C, V
DD
= 1.8 0.1 V, unless otherwise noted)
Parameter Symbol Conditions MIN.
TYP.
MAX.
Unit
Note
JTAG Input leakage current
I
LI
0
V
V
IN
V
DD
5.0
+5.0
A
JTAG I/O leakage current
I
LO
0
V
V
IN
V
DD
Q, 5.0
+5.0
A
Outputs
disabled
JTAG input high voltage
V
IH
1.3
V
DD
+0.3 V
JTAG input low voltage
V
IL
0.3
+0.5 V
JTAG output high voltage
V
OH1
|
I
OHC
| = 100
A 1.6
V
V
OH2
|
I
OHT
| = 2 mA
1.4
V
JTAG output low voltage
V
OL1
I
OLC
= 100
A
0.2
V
V
OL2
I
OLT
= 2 mA
0.4
V
20
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
JTAG AC Test Conditions

Input waveform (Rise / Fall time
1 ns)
0.9 V
0.9 V
Test Points
1.8 V
0 V

Output
waveform
0.9 V
0.9 V
Test Points


Output
load
Figure 2. External load at test
TDO
Z
O
= 50
V
TT
= 0.9 V
20 pF
50
21
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
JTAG AC Characteristics (T
A
= 0 to 70
C)
Parameter Symbol Conditions
MIN.
TYP.
MAX.
Unit
Note
Clock
Clock cycle time
t
THTH
100
ns
Clock frequency
f
TF
10 MHz
Clock high time
t
THTL
40
ns
Clock low time
t
TLTH
40
ns
Output
time
TCK low to TDO unknown
t
TLOX
0
ns
TCK low to TDO valid
t
TLOV
20 ns
TDI valid to TCK high
t
DVTH
10
ns
TCK high to TDI invalid
t
THDX
10
ns
Setup
time
TMS setup time
t
MVTH
10
ns
Capture setup time
t
CS
10 ns
Hold
time
TMS hold time
t
THMX
10
ns
Capture hold time
t
CH
10
ns

JTAG Timing Diagram
t
THTH
t
TLOV
t
TLTH
t
THTL
t
MVTH
t
THDX
t
DVTH
t
THMX
TCK
TMS
TDI
TDO
t
TLOX
22
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
Scan Register Definition (1)
Register name
Description
Instruction register
The instruction register holds the instructions that are executed by the TAP controller when it is
moved into the run-test/idle or the various data register state. The register can be loaded when it is
placed between the TDI and TDO pins. The instruction register is automatically preloaded with the
IDCODE instruction at power-up whenever the controller is placed in test-logic-reset state.
Bypass register
The bypass register is a single bit register that can be placed between TDI and TDO. It allows serial
test data to be passed through the RAMs TAP to another device in the scan chain with as little delay
as possible.
ID register
The ID Register is a 32 bit register that is loaded with a device and vendor specific 32 bit code when
the controller is put in capture-DR state with the IDCODE command loaded in the instruction register.
The register is then placed between the TDI and TDO pins when the controller is moved into shift-DR
state.
Boundary register
The boundary register, under the control of the TAP controller, is loaded with the contents of the
RAMs I/O ring when the controller is in capture-DR state and then is placed between the TDI and
TDO pins when the controller is moved to shift-DR state. Several TAP instructions can be used to
activate the boundary register.
The Scan Exit Order tables describe which device bump connects to each boundary register
location. The first column defines the bit's position in the boundary register. The second column is
the name of the input or I/O at the bump and the third column is the bump number.
Scan Register Definition (2)
Register name
Bit size
Unit
Instruction register
3
bit
Bypass register
1
bit
ID register
32
bit
Boundary register
109
bit
ID Register Definition
Part number
Organization ID [31:28] vendor revision no.
ID [27:12] part no.
ID [11:1] vendor ID no.
ID [0] fix bit
PD44324085
4M x 8
XXXX
0000 0000 0100 0101
00000010000
1
PD44324095
4M x 9
XXXX
0000 0000 0100 0110
00000010000
1
PD44324185
2M x 18
XXXX
0000 0000 0100 0111
00000010000
1
PD44324365
1M x 36
XXXX
0000 0000 0100 1000
00000010000
1
23
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
SCAN Exit Order
Bit Signal
name
Bump
Bit Signal
name Bump
Bit
Signal
name Bump
no. x8 x9 x18 x36 ID no. x8 X9 x18 x36 ID no. x8 X9 x18 x36 ID
1
/C
6R 37 NC NC NC D15 10D
73 NC NC NC Q28 2C
2
C
6P 38 NC NC NC Q15
9E 74 Q4 Q5 Q11 Q20 3E
3
A
6N 39 NC NC Q7 Q7 10C
75 D4 D5 D11 D20 2D
4
A
7P 40 NC NC D7 D7 11D
76 NC NC NC D29 2E
5
A
7N 41 NC NC NC D16
9C 77 NC NC NC Q29 1E
6
A
7R 42 NC NC NC Q16
9D 78 NC NC Q12
Q21 2F
7
A
8R 43 Q3 Q4 Q8 Q8 11B
79 NC NC D12 D21 3F
8
A
8P 44 D3 D4 D8 D8 11C
80 NC NC NC D30 1G
9
A
9R 45 NC NC NC D17
9B 81 NC NC NC Q30 1F
10 NC Q0 Q0 Q0 11P 46 NC NC NC Q17 10B
82 Q5 Q6 Q13 Q22 3G
11 NC D0 D0 D0 10P 47
CQ
11A
83 D5 D6 D13 D22 2G
12 NC NC NC D9 10N 48 A A V
SS
V
SS
10A
84
/DLL
1H
13 NC NC NC Q9 9P 49
A
9A 85 NC NC NC D31 1J
14 NC NC Q1 Q1
10M 50
A
8B 86 NC NC NC Q31 2J
15 NC NC D1 D1 11N 51
A
7C 87 NC NC Q14
Q23 3K
16 NC NC NC
D10
9M 52
A
6C 88 NC NC D14 D23 3J
17 NC NC NC
Q10
9N 53
/LD
8A 89 NC NC NC D32 2K
18 Q0 Q1 Q2 Q2 11L 54 NC NC NC /BW1 7A 90 NC NC NC Q32 1K
19 D0 D1 D2 D2 11M 55 /NW0 /BW0 /BW0 /BW0 7B 91 Q6 Q7 Q15 Q24 2L
20 NC NC NC
D11 9L 56
K
6B 92 D6 D7 D15 D24 3L
21 NC NC NC
Q11
10L 57
/K
6A 93 NC NC NC D33 1M
22 NC NC Q3 Q3 11K 58 NC NC NC
/BW3 5B 94 NC NC NC Q33 1L
23 NC NC D3 D3 10K 59
/NW1 NC
/BW1 /BW2 5A 95 NC NC Q16
Q25 3N
24 NC NC NC
D12 9J 60
R,
/W
4A 96 NC NC D16 D25 3M
25 NC NC NC
Q12 9K 61
A
5C 97 NC NC NC D34 1N
26 Q1 Q2 Q4 Q4 10J 62
A
4B 98 NC NC NC Q34 2M
27 D1 D2 D4 D4 11J 63 A A A NC 3A 99 Q7 Q8 Q17
Q26 3P
28 ZQ 11H
64 V
SS
2A
100
D7
D8
D17
D26
2N
29 NC NC NC D13
10G 65
/CQ
1A 101 NC NC NC D35 2P
30 NC NC NC Q13 9G 66 NC NC Q9 Q18
2B 102 NC NC NC Q35 1P
31 NC NC Q5 Q5 11F 67 NC NC D9 D18
3B 103
A
3R
32 NC NC D5 D5 11G 68 NC NC NC D27
1C 104
A
4R
33 NC NC NC D14 9F 69 NC NC NC Q27
1B 105
A
4P
34 NC NC NC Q14 10F 70 NC NC Q10 Q19
3D 106
A
5P
35 Q2 Q3 Q6 Q6 11E 71 NC NC D10 D19
3C 107
A
5N
36 D2 D3 D6 D6 10E 72 NC NC NC D28
1D 108
A
5R
109
Internal
24
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
JTAG Instructions
Instructions Description
EXTEST
The EXTEST instruction allows circuitry external to the component package to be tested. Boundary-
scan register cells at output pins are used to apply test vectors, while those at input pins capture test
results. Typically, the first test vector to be applied using the EXTEST instruction will be shifted into the
boundary scan register using the PRELOAD instruction. Thus, during the update-IR state of EXTEST,
the output drive is turned on and the PRELOAD data is driven onto the output pins.
IDCODE
The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in
capture-DR mode and places the ID register between the TDI and TDO pins in shift-DR mode. The
IDCODE instruction is the default instruction loaded in at power up and any time the controller is
placed in the test-logic-reset state.
BYPASS
The BYPASS instruction is loaded in the instruction register when the bypass register is placed
between TDI and TDO. This occurs when the TAP controller is moved to the shift-DR state. This
allows the board level scan path to be shortened to facilitate testing of other devices in the scan path.
SAMPLE / PRELOAD SAMPLE / PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE /
PRELOAD instruction is loaded in the instruction register, moving the TAP controller into the capture-
DR state loads the data in the RAMs input and Q pins into the boundary scan register. Because the
RAM clock(s) are independent from the TAP clock (TCK) it is possible for the TAP to attempt to
capture the I/O ring contents while the input buffers are in transition (i.e., in a metastable state).
Although allowing the TAP to sample metastable input will not harm the device, repeatable results
cannot be expected. RAM input signals must be stabilized for long enough to meet the TAPs input
data capture setup plus hold time (t
CS
plus t
CH
). The RAMs clock inputs need not be paused for any
other TAP operation except capturing the I/O ring contents into the boundary scan register. Moving
the controller to shift-DR state then places the boundary scan register between the TDI and TDO pins.
SAMPLE-Z
If the SAMPLE-Z instruction is loaded in the instruction register, all RAM Q pins are forced to an
inactive drive state (high impedance) and the boundary register is connected between TDI and TDO
when the TAP controller is moved to the shift-DR state.
JTAG Instruction Coding
IR2 IR1 IR0 Instruction Note
0 0 0 EXTEST
0 0 1 IDCODE
0 1 0 SAMPLE-Z 1
0 1 1 RESERVED
1
0
0
SAMPLE / PRELOAD
1 0 1 RESERVED
1 1 0 RESERVED
1 1 1 BYPASS
Note 1. TRISTATE all Q pins and CAPTURE the pad values into a SERIAL SCAN LATCH.
25
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
TAP Controller State Diagram
Test-Logic-Reset
Run-Test / Idle
Select-DR-Scan
Capture-DR
Capture-IR
Shift-DR
Exit1-DR
Pause-DR
Exit2-DR
Update-DR
Update-IR
Exit2-IR
Pause-IR
Exit1-IR
Shift-IR
Select-IR-Scan
0
0
0
1
0
1
1
0
0
1
0
1
1
0
0
0
0
1
0
1
0
1
1
1
0
1
1
0
1
0
1
1

Disabling the Test Access Port
It is possible to use this device without utilizing the TAP. To disable the TAP Controller without interfering with normal
operation of the device, TCK must be tied to V
SS
to preclude mid level inputs.
TDI and TMS are designed so an undriven input will produce a response identical to the application of a logic 1, and
may be left unconnected. But they may also be tied to V
DD
through a 1 k
resistor.
TDO should be left unconnected.
26
Preliminary Da
ta
S
heet
M167
82E
J1V
0DS
PD44324085, 44324095,
44324185, 44324365
Test Logic Operation (Instruction Scan)
TCK
Controller
state
TDI
TMS
TDO
Test-Logic-Reset
Run-Test/Idle
Select-DR-Scan
Select-IR-Scan
Capture-IR
Shift-IR
Exit1-IR
Pause-IR
Exit2-IR
Shift-IR
Exit1-IR
Update-IR
Run-Test/Idle
IDCODE
Instruction
Register state
New Instruction
Output Inactive
27
Preliminary Da
ta
S
heet
M167
82E
J1V
0DS
PD44324085, 44324095,
44324185, 44324365
Test Logic (Data Scan)
Controller
state
TDI
TMS
TDO
Run-Test/Idle
Select-DR-Scan
Capture-DR
Shift-DR
Exit1-DR
Pause-DR
Exit2-DR
Shift-DR
Exit1-DR
Update-DR
Test-Logic-Reset
Instruction
Instruction
Register state
IDCODE
Run-Test/Idle
Select-DR-Scan
Select-IR-Scan
Output Inactive
TCK
28
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
Package Drawing
y1 S
S
y
S
A
A
B
S
S
A B
x
M
b
e
h
A1
A2
A
INDEX MARK
E
D
ZD
ZE
R P N M L K J H G F E D C B A
11
10
9
8
7
6
5
4
3
2
1
w
B
S
w
ITEM
MILLIMETERS
D
E
ZD
ZE
e
h
A
A1
A2
b
y
x
w
y1
13.00
15.00
1.50
0.50
1.00
0.60
1.40
0.40
1.00
0.50
0.08
0.08
0.15
0.20
This package drawing is a preliminary version. It may be changed in the future.
165-PIN PLASTIC FBGA (13x15)
29
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
Recommended Soldering Condition
Please consult with our sales offices for soldering conditions of these products.
Types of Surface Mount Devices
PD44324085F5-EQ2: 165-pin PLASTIC FBGA (13 x 15)
PD44324095F5-EQ2: 165-pin PLASTIC FBGA (13 x 15)
PD44324185F5-EQ2: 165-pin PLASTIC FBGA (13 x 15)
PD44324365F5-EQ2: 165-pin PLASTIC FBGA (13 x 15)
30
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
Revision History
Edition/ Page
Type
of Location
Description
Date This
Previous
revision
(Previous
edition
This edition)
edition
edition
1st edition/
Throughout Throughout
Modification
Preliminary Product Information
Oct. 2004
Preliminary Data sheet
Package
Code
F5-EQ1
F5-EQ2
Deletion
-E60 (167MHz)
p.2
p.2
Addition
Ordering
Information
"Note Under development" has been added to
-E33.
pp.3-6
pp.3-6
Pin Configurations
Remark 2 has been added
p.9
Power-on Sequence
Power-on sequence has been added
p.14
p.14
Modification DC Characteristics I
DD
(MAX.)
MAX.
Unit
MAX.
Unit
x8, x9 x18
x36
x8, x9 x18 x36
-E33 760 780 810
mA
-E33 750 1,050
1,200 mA
-E40 650 670 700
-E40 650 900 1,000
-E50 550 570 600
-E50 550 750 850
DC Characteristics I
SB1
(MAX.)
MAX.
Unit
MAX.
Unit
x8, x9 x18
x36
x8, x9 x18 x36
-E33
290
mA
-E33 550 mA
-E40
250
-E40 500
-E50
210
-E50 400
31
Preliminary Data Sheet
M16782EJ1V0DS
PD44324085, 44324095, 44324185, 44324365
1
2
3
4
VOLTAGE APPLICATION WAVEFORM AT INPUT PIN
Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the
CMOS device stays in the area between V
IL
(MAX) and V
IH
(MIN) due to noise, etc., the device may
malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed,
and also in the transition period when the input level passes through the area between V
IL
(MAX) and
V
IH
(MIN).
HANDLING OF UNUSED INPUT PINS
Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is
possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS
devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to V
DD
or GND
via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must
be judged separately for each device and according to related specifications governing the device.
PRECAUTION AGAINST ESD
A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as
much as possible, and quickly dissipate it when it has occurred. Environmental control must be
adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that
easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static
container, static shielding bag or conductive material. All test and measurement tools including work
benches and floors should be grounded. The operator should be grounded using a wrist strap.
Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for
PW boards with mounted semiconductor devices.
STATUS BEFORE INITIALIZATION
Power-on does not necessarily define the initial status of a MOS device. Immediately after the power
source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does
not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the
reset signal is received. A reset operation must be executed immediately after power-on for devices
with reset functions.
POWER ON/OFF SEQUENCE
In the case of a device that uses different power supplies for the internal operation and external
interface, as a rule, switch on the external power supply after switching on the internal power supply.
When switching the power supply off, as a rule, switch off the external power supply and then the
internal power supply. Use of the reverse power on/off sequences may result in the application of an
overvoltage to the internal elements of the device, causing malfunction and degradation of internal
elements due to the passage of an abnormal current.
The correct power on/off sequence must be judged separately for each device and according to related
specifications governing the device.
INPUT OF SIGNAL DURING POWER OFF STATE
Do not input signals or an I/O pull-up power supply while the device is not powered. The current
injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and
the abnormal current that passes in the device at this time may cause degradation of internal elements.
Input of signals during the power off state must be judged separately for each device and according to
related specifications governing the device.
NOTES FOR CMOS DEVICES
5
6
PD44324085, 44324095, 44324185, 44324365
The information in this document is current as of October, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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Descriptions of circuits, software and other related information in this document are provided for illustrative
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M8E 02. 11-1