GaAs INTEGRATED CIRCUIT
PG2106TB,
PG2110TB
L-BAND PA DRIVER AMPLIFIER
Document No. P14318EJ1V0DS00 (1st edition)
Date Published October 1999 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999
DESCRIPTION
The
PG2106TB and
PG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were
developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with
3.0 V, having the high gain and low distortion. The
PG2106TB is for 800 MHz band application, and the
PG2110TB is for 1.5 GHz band application.
FEATURES
Low operation voltage
: V
DD1
= V
DD2
= 3.0 V
f
RF
: 889 to 960 MHz, 1429 to 1453 MHz@P
out
= +8 dBm
Low distortion
: P
adj1
=
-
60 dBc TYP. @V
DD
= 3.0 V, P
out
= +8 dBm, V
AGC
= 2.5 V
External input and output matching
Low operation current
: I
DD
= 25 mA TYP. @V
DD
= 3.0 V, P
out
= +8 dBm, V
AGC
= 2.5 V
External input and output matching
Variable gain control function :
G = 40 dB TYP. @V
AGC
= 0.5 to 2.5 V
External input and output matching
6-pin super minimold package
APPLICATION
Digital Cellular : PDC, IS-136 etc.
ORDERING INFORMATION (PLAN)
Part Number
Package
Supplying Form
PG2106TB-E3
PG2110TB-E3
6-pin super minimold
Carrier tape width is 8 mm.
Qty 3 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order:
PG2106TB,
PG2110TB)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
C)
Parameter
Symbol
Ratings
Unit
Supply Voltage
V
DD1
, V
DD2
6.0
V
AGC Control Voltage
V
AGC
6.0
V
Input Power
P
in
-
8
dBm
Total Power Dissipation
P
tot
140
Note
mW
Operating Ambient Temperature
T
A
-
30 to +90
C
Storage Temperature
T
stg
-
35 to +150
C
Note
Mounted on a 50
50
1.6 mm double copper clad epoxy glass PWB, T
A
= +85
C
Caution
The IC must be handled with care to prevent static discharge because its circuit composed of
GaAs HJ-FET.
Preliminary Data Sheet P14318EJ1V0DS00
2
PG2106TB,
PG2110TB
[
PG2106TB]
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Pin No.
Connection
Pin No.
Connection
1
V
DD1
4
V
AGC
2
GND
5
GND
3
V
DD2
& OUT
6
IN
6
5
4
1
2
3
1
2
3
6
5
4
1
2
3
6
5
4
Top View
Bottom View
Top View
RECOMMENDED OPERATING CONDITIONS (T
A
= +25
C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Supply Voltage
V
DD1
, V
DD2
+2.7
+3.0
+3.3
V
Input Power
P
in
-
-
18
-
10
dBm
AGC Control Voltage
V
AGC
0
-
2.5
V
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, T
A
= +25
C, V
DD1
= V
DD2
= +3.0 V,
/4DQPSK modulated signal input, External
input and output matching)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Operating Frequency
f
889
-
960
MHz
Power Gain
G
p
P
in
=
-
18 dBm, V
AGC
= 2.5 V
26
30
-
dB
Total Current
I
DD
P
out
= +8 dBm, V
AGC
= 2.5 V
-
25
35
mA
Adjacent Channel
Power Leakage 1
P
adj1
P
out
= +8 dBm, V
AGC
= 2.5 V
f =
50 kHz, 21 kHz Band Width
-
-
60
-
55
Adjacent Channel
Power Leakage 2
P
adj2
P
out
= +8 dBm, V
AGC
= 2.5 V
f =
100 kHz, 21 kHz Band Width
-
-
70
-
65
dBc
Variable Gain Range
G
P
in
=
-
18 dBm, V
AGC
= 0.5 to 2.5 V
35
40
-
dB
AGC Control Current
I
AGC
V
AGC
= 0.5 to 2.5 V
-
200
500
A
G1V
1
2
3
6
5
4
Preliminary Data Sheet P14318EJ1V0DS00
3
PG2106TB,
PG2110TB
[
PG2110TB]
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Pin No.
Connection
Pin No.
Connection
1
V
DD1
4
V
AGC
2
GND
5
GND
3
V
DD2
& OUT
6
IN
6
5
4
1
2
3
1
2
3
6
5
4
1
2
3
6
5
4
Top View
Bottom View
Top View
RECOMMENDED OPERATING CONDITIONS (T
A
= +25
C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Supply Voltage
V
DD1
, V
DD2
+2.7
+3.0
+3.3
V
Input Power
P
in
-
-
18
-
10
dBm
AGC Control Voltage
V
AGC
0
-
2.5
V
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, T
A
= +25
C, V
DD1
= V
DD2
= +3.0 V,
/4DQPSK modulated signal input, External
input and output matching)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Operating Frequency
f
1429
-
1453
MHz
Power Gain
G
p
P
in
=
-
18 dBm, V
AGC
= 2.5 V
24
27
-
dB
Total Current
I
DD
P
out
= +8 dBm, V
AGC
= 2.5 V
-
25
35
mA
Adjacent Channel
Power Leakage 1
P
adj1
P
out
= +8 dBm, V
AGC
= 2.5 V
f =
50 kHz, 21 kHz Band Width
-
-
60
-
55
Adjacent Channel
Power Leakage 2
P
adj2
P
out
= +8 dBm, V
AGC
= 2.5 V
f =
100 kHz, 21 kHz Band Width
-
-
70
-
65
dBc
Variable Gain Range
G
P
in
=
-
18 dBm, V
AGC
= 0.5 to 2.5 V
35
40
-
dB
AGC Control Current
I
AGC
V
AGC
= 0.5 to 2.5 V
-
200
500
A
G1Y
1
2
3
6
5
4
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