IGBT
MODULE
MODULE
MODULE
MODULE
Dual 200A 1200V
Dual 200A 1200V
Dual 200A 1200V
Dual 200A 1200V
PDMB200B12
PDMB200B12
PDMB200B12
PDMB200B12
CIRCUIT OUTLINE DRAWING
MAXMUM RATINGS
(Tc=25
C)
Item Symbol
PDMB200B12
Unit
Collector-Emitter Voltage
V
CES
1200 V
Gate - Emitter Voltage
V
GES
+/
-
20 V
DC I
C
200
Collector Current
1 ms
I
CP
400
A
Collector Power Dissipation
P
C
960
W
Junction Temperature Range
T
j
-40 to +150
C
Storage Temperature Range
T
stg
-40 to +125
C
Isolation Voltage Terminal to Base AC, 1 min.)
V
ISO
2500
V
Module Base to Heatsink
3
Mounting Torque
Bus Bar to Main Terminals
F
TOR
2
N
m
ELECTRICAL CHARACTERISTICS
(Tc=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-Emitter Cut-Off Current
I
CES
V
CE
=1200V,V
GE
=0V -
-
4.0
mA
Gate-Emitter Leakage Current
I
GES
V
GE
=+/- 20V,V
CE
=0V -
-
1.0
A
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=200A,V
GE
=15V -
1.9
2.4
V
Gate-Emitter Threshold Voltage
V
GE(th)
V
CE
=5V,I
C
=200mA 4.0
-
8.0
V
Input Capacitance
Cies
V
CE
=10V,V
GE
=0V,f=1MHz -
16600
-
pF
Rise Time
t
r
-
0.25
0.45
Turn-on Time
t
on
-
0.40
0.70
Fall Time
t
f
-
0.25
0.35
Switching Time
Turn-off Time
t
off
V
CC
= 600V
R
L
= 3 ohm
R
G
= 2 ohm
V
GE
= +/- 15V
- 0.80
1.10
s
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25
C)
Item Symbol
Rated
Value
Unit
DC I
F
200
Forward Current
1 ms
I
FM
400
A
Characteristic Symbol Test
Condition Min.
Typ.
Max.
Unit
Peak Forward Voltage
V
F
I
F
=200A,V
GE
=0V -
1.9
2.4
V
Reverse Recovery Time
t
rr
I
F
=200A,V
GE
=-10V,di/dt=400A/
s
- 0.2 0.3
s
THERMAL CHARACTERISTICS
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
IGBT -
-
0.125
Thermal Impedance
DIODE
R
th(j-c)
Junction to Case
- -
0.24
C/W
4- fasten- tab No 110
Dimension(mm)
Approximate Weight : 500g
PDMB200B12
0
2
4
6
8
10
0
100
200
300
400
Collector to Emitter Voltage V
CE
(V)
Co
l
l
ect
o
r
C
u
r
r
ent
I
C
(A
)
Fig.1- Output Characteristics
(Typical)
T
C
=25
10V
9V
12V
15V
V
GE
=20V
8V
7V
0
4
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage V
GE
(V)
C
o
l
l
e
c
to
r
t
o
E
m
i
tte
r V
o
l
t
a
g
e
V
CE
(V
)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
T
C
=25
200A
I
C
=100A
400A
0
4
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage V
GE
(V)
C
o
l
l
e
c
to
r
t
o
E
m
i
tte
r V
o
l
t
a
g
e
V
CE
(V
)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
I
C
=100A
200A
400A
T
C
=125
0
2
4
6
8
10
12
14
16
0
300
600
900
1200
1500
0
100
200
300
400
500
600
700
800
Total Gate Charge Qg
(nC)
Co
l
l
ect
o
r
t
o
E
m
i
t
t
e
r
V
o
l
t
a
g
e
V
CE
(V
)
G
a
te
t
o
E
m
i
t
te
r
V
o
l
t
a
g
e
V
GE
(V
)
Fig.4- Gate Charge vs. Collector to Emitter Voltage
(Typical)
V
CE
=600V
400V
200V
R
L
=3
T
C
=25
0.1
0.2
0.5
1
2
5
10
20
50
100
200
100
200
500
1000
2000
5000
10000
20000
50000
100000
Collector to Emitter Voltage V
CE
(V)
Ca
p
a
ci
t
a
nce C
(p
F
)
Fig.5- Capacitance vs. Collector to Emitter Voltage
(Typical)
Cies
Coes
Cres
V
GE
=0V
f=1MH
Z
T
C
=25
0
50
100
150
200
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Collector Current I
C
(A)
S
w
i
t
chi
n
g
T
i
m
e
t
(
s)
Fig.6- Collector Current vs. Switching Time
(Typical)
t
OFF
t
f
t
r
t
ON
V
CC
=600V
R
G
= 2.0
V
GE
=15V
T
C
=25
PDMB200B12
0
1
2
3
4
0
100
200
300
400
Forward Voltage V
F
(V)
F
o
rw
a
r
d
C
u
rre
n
t
I
F
(A
)
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
T
C
=25
T
C
=125
0
400
800
1200
1600
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
Collector to Emitter Voltage V
CE
(V)
Co
l
l
e
ct
o
r
Cur
r
ent
I
C
(A
)
Fig.10- Reverse Bias Safe Operating Area
(Typical)
R
G
=2
V
GE
=15V
T
C
125
1
2
5
10
20
50
100
200
0.05
0.1
0.2
0.5
1
2
5
10
Series Gate Impedance R
G
()
Sw
i
t
chi
ng
T
i
m
e
t
(
s)
Fig.7- Series Gate Impedance vs. Switching Time
(Typical)
V
CC
=600V
I
C
=200A
V
GE
=15V
T
C
=25
tf
tr
ton
toff
0
200
400
600
800
1000
1200
5
10
20
50
100
200
500
1000
-di/dt
(A/s)
P
e
ak
Re
v
e
r
s
e
Re
c
o
ve
r
y
C
u
r
r
e
n
t
I
Rr
M
(A
)
R
e
v
e
rs
e
R
e
c
o
v
e
ry
T
i
m
e
t
r
r
(n
s
)
Fig.9- Reverse Recovery Characteristics
(Typical)
I
RrM
trr
I
F
=200A
T
C
=25
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
1
5x10
-4
1x10
-3
2x10
-3
5x10
-3
1x10
-2
2x10
-2
5x10
-2
1x10
-1
2x10
-1
5x10
-1
1
Time t
(s)
T
r
a
n
s
i
en
t T
h
erm
a
l
I
m
p
e
d
a
n
ce
R
t
h
(J-
C
)
(
/W
)
Fig.11- Transient Thermal Impedance
T
C
=25
1 Shot Pulse
FRD
IGBT
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