OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:0.06g
Rating Symbol EC10DS1 Unit
Repetitive Peak Reverse Voltage
V
RRM
100
V
Non-repetitive Peak Reverse Voltage
V
RSM
250
V
0.74 Ta=25
C *1
Average Rectified Output Current
I
O
1.0 Ta=25
C *2
50Hz Half Sine
Wave Resistive Load
A
RMS Forward Current
I
F(RMS)
1.57
A
Surge Forward Current
I
FSM
25
50Hz Half Sine Wave,1cycle
Non-repetitive
A
Operating JunctionTemperature Range
T
jw
-40 to +150
C
Storage Temperature Range
T
stg
-40 to +150
C
Electrical
Thermal Characteristics
Characteristics Symbol
Conditions
Min.
Typ.
Max.
Unit
Peak Reverse Current
I
RM
Tj= 25
C, V
RM
= V
RRM
- - 10
A
Peak Forward Voltage
V
FM
Tj= 25
C, I
FM
= 1.0A
- - 1.1 V
*1 -
-
157
Thermal Resistance
Rth
(j-a)
Junction to Ambient
*2 -
-
108
C
/W
*1 Glass Epoxy Substrate Mounted (Soldering Lands=2x2mm,Both Sides)
*2 Alumina Substrate Mounted (Soldering Lands=2x2mm,Both Sides)
DIODE
Type
:
EC10DS1
EC10DS1
EC10DS1
EC10DS1
FEATURES
FEATURES
FEATURES
FEATURES
* Miniature Size,Surface Mount Device
* High Surge Capability
* Low Forward Voltage Drop
* Low Reverse Leakage Current
* Packaged in 12mm Tape and Reel
* Not Rolling During Assembly
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