ChipFind - документация

Электронный компонент: PB10S2

Скачать:  PDF   ZIP
DIODE
Type:
PB10S1,2,4,6
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:8.5g
FEATURES
* Surge Overload Rating : 150 Amperes Peak
* Low Forward Voltage Drop
* Mounting Position : Any
SINGLE PHASE SILICON BRIDGE RECTIFIER
Rating
Symbol PB10S1 PB10S2 PB10S4 PB10S6
Unit
Repetitive Peak Reverse Voltage
V
RRM
100 200 400 600
V
Non-repetitive Peak Reverse Voltage
V
RSM
120 240 480 680
V
10 Tc=102
C, With 200x200x1.5mm,Al-Fin
Average Rectified Output Current
I
O
3.7 Ta=40
C, Without Fin
A
Surge Forward Current Per 1 Arm
I
FSM
150
50 Hz Half Sine Wave,1cycle
Non-repetitive
A
Operating JunctionTemperature Range
T
jw
- 40 to + 150
C
Storage Temperature Range
T
stg
- 40 to + 150
C
Insuration Withstand Voltage
V
iso
1500 Terminal to Base, AC 1min. V
Mounting torque
F
w
0.5
Recommended
value
N
m
Electrical
Thermal Characteristics
Characteristics
Symbol
Conditions Min.
Typ. Max.
Unit
Peak Reverse Current Per 1 Arm
I
RM
Tj= 25
C, V
RM
= V
RRM
- - 5
A
Peak Forward Voltage Per 1 Arm
V
FM
Tj= 25
C, I
FM
= 5A
- - 1.0
V
Thermal Resistance
Rth(j-c) Junction to Case(total)
-
-
3.5
C/W


















PB10S1,2,4,6 OUTLINE DRAWING (Dimensions in mm)