ChipFind - документация

Электронный компонент: PDT2018

Скачать:  PDF   ZIP
THYRISTOR MODULE






Maximum Ratings
Approx Net Weight:280g
Grade
Parameter
Parameter
Parameter
Parameter
Symbol
PDT/PDH2018
Unit
Repetitive Peak Off-State Voltage
V
DRM
800
Non Repetitive Peak Off-State Voltage
V
DSM
960
V
Repetitive Peak Reverse Voltage
V
RRM
800
Non Repetitive Peak Reverse Voltage
V
RSM
960
V
arameter
arameter
arameter
arameter
Conditions
Conditions
Conditions
Conditions
Max Rated
Max Rated
Max Rated
Max Rated
Value
Value
Value
Value
Unit
Average Rectified Output Current
I
O(AV)
50Hz Half Sine Wave condition
Tc=65
C
200 A
RMS On-State Current
I
T(RMS)
314
A
Surge Forward Current
I
FSM
50 Hz Half Sine Wave,1cycle
Non-Repetitive
4000 A
I Squared t
I
2
t
2msec to 10msec
80000
A
2
s
Critical Rate of Turned-On Current
di/dt
V
D
=2/3V
DRM
, I
TM
=2
I
O
, Tj=125
C
I
G
=300mA, di
G
/dt=0.2A/
s
100
A/
s
Peak Gate Power
P
GM
5
W
Average Gate Power
P
G(AV)
1
W
Peak Gate Current
I
GM
2
A
Peak Gate Voltage
V
GM
10
V
Peak Gate Reverse Voltage
V
RGM
5
V
Operating JunctionTemperature Range
Tjw
-40 to +125
C
Storage Temperature Range
Tstg
-40 to +125
C
Isoration Voltage
Viso
Base Plate to Terminals, AC1min
2500 V
Case mounting
M6 Screw
2.5 to 3.5
Mounting torque
Terminals
Ftor
M6 Screw
2.5 to 3.5
N
m
Value per 1 Arm
FEATURES
* 108mm Short Size Case
* Isolated Base
* Dual Thyristors or Thyristor and
Diode Cascaded Circuit
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* AC phase control
P
P
P
P D T 2 0 1 8 P D H 2 0 1 8
D T 2 0 1 8 P D H 2 0 1 8
D T 2 0 1 8 P D H 2 0 1 8
D T 2 0 1 8 P D H 2 0 1 8
OUTLINE DRAWING
200A / 800V
PDT
PDH
Electrical
Thermal Characteristics
Maximum Value.
Characteristics
Symbol
Test Conditions
Min. Typ. Max.
Unit
Peak Off-State Current
I
DM
V
DM
= V
DRM,
Tj=125
C
30
mA
Peak Reverse Current
I
RM
V
RM
= V
RRM,
Tj= 125
C
30
mA
Peak On-State Voltage
V
TM
I
TM
= 600A, Tj=25
C
1.34
V
Tj=-40
C
300
Tj=25
C
150
Gate Current to Trigger
I
GT
V
D
=6V,I
T
=1A
Tj=125
C
80
mA
Tj=-40
C
5
Tj=25
C
3
Gate Voltage to Trigger
V
GT
V
D
=6V,I
T
=1A
Tj=125
C
2
V
Gate Non-Trigger Voltage
V
GD
V
D
=2/3V
DRM
Tj=125
C
0.25 V
Critical Rate of Rise of Off-State
Voltage
dv/dt V
D
=2/3V
DRM
Tj=125
C
500 V/
s
Turn-Off Time
tq
I
TM
=I
O
,V
D
=2/3V
DRM
dv/dt=20V/
s, V
R
=100V
-di/dt=20A/
s, Tj=125
C
100
s
Turn-On Time
tgt
6
s
Delay Time
td
2
s
Rise Time
tr
Tj=25
C, I
TM
=I
T(RMS)
V
D
=2/3V
DRM
, I
G
=300mA
di
G
/dt=0.2A/
s
4
s
Latching Current
I
L
Tj=25
C
100 mA
Holding Current
I
H
Tj=25
C
60
Rth(j-c) Junction to Case
0.23
Thermal Resistance
Rth(c-f)
Base Plate to Heat Sink
with Thermal Compound
0.15
C/W
Value Per 1Arm






















PDT/PDH2018 OUTLINE DRAWING (Dimensions in mm)
ON-STATE CURRENT VS. VOLTAGE
PDT/PDH2018
0
1
2
3
4
INSTANTANEOUS ON-STATE VOLTAGE (V)
2
5
10
20
50
100
200
500
1000
2000
5000
INSTANTANEOUS ON-STATE CURRENT (A)
Tj=25C
Tj=125C
ON-STATE CURRENT VS. VOLTAGE
PDT/PDH2018
0
1
2
3
4
INSTANTANEOUS ON-STATE VOLTAGE (V)
2
5
10
20
50
100
200
500
1000
2000
5000
INSTANTANEOUS ON-STATE CURRENT (A)
Tj=25C
Tj=125C
AVERAGE ON-STATE POWER DISSIPATION
for
0
50
100
150
200
250
300
350
AVERAGE ON-STATE CURRENT (A)
0
50
100
150
200
250
300
350
AVERAGE ON-STATE POWER DISSIPATION (W)
PDT/PDH2018
0.02s
I TSM
=180
120
90
60
30
D.C.
=180
120
90
60
30
AVERAGE ON-STATE CURRENT VS. CASE TEMPERATURE
PDT/PDH2018
(50Hz SINUSOIDAL CURRENT WAVEFORM)
0
25
50
75
100
125
CASE TEMPERATURE (C)
0
40
80
120
160
200
AVERAGE ON-STATE CURRENT (A)
0
180
CONDUCTION ANGLE
=180
120
90
60
30